Abstract: Laser annealing systems and methods for annealing a semiconductor wafer with ultra-short dwell times are disclosed. The laser annealing systems can include one or two laser beams that at least partially overlap. One of the laser beams is a pre-heat laser beam and the other laser beam is the annealing laser beam. The annealing laser beam scans sufficiently fast so that the dwell time is in the range from about 1 ?s to about 100 ?s. These ultra-short dwell times are useful for annealing product wafers formed from thin device wafers because they prevent the device side of the device wafer from being damaged by heating during the annealing process. Embodiments of single-laser-beam annealing systems and methods are also disclosed.

Abstract: A method of performing a radical-enhanced atomic-layer deposition process on a surface of a substrate that resides within an interior of a reactor chamber is disclosed. The method includes forming plasma from a gas mixture consisting of CF4 and O2, wherein the CF4 is present in a concentration in the range from 0.1 vol % to 10 vol %. The plasma formed from the gas mixture generates oxygen radicals O* faster than if there were no CF4 present in the gas mixture. The method also includes feeding the oxygen radicals and a precursor gas sequentially into the interior of the reactor chamber to form an oxide film on the surface of the substrate. A system for performing the radical-enhanced atomic-layer deposition process using the rapidly formed oxygen radicals is also disclosed.

Abstract: A betavoltaic power source for transportation devices and applications is disclosed, wherein the device having a stacked configuration of isotope layers and energy conversion layers. The isotope layers have a half-life of between about 0.5 years and about 5 years and generate radiation with energy in the range from about 15 keV to about 200 keV. The betavoltaic power source is configured to provide sufficient power to operate the transportation device over its useful lifetime.

Abstract: A line-forming optical system and method are disclosed that form a line image with high-efficiency. A method includes forming a laser beam having a first intensity profile with a Gaussian distribution in at least a first direction and passing at least 50% of the laser beam in the first direction to form a first transmitted light. The method also includes: focusing the first transmitted light at an intermediate image plane to define a second intensity profile having a central peak and first side peaks immediately adjacent the central peak; then truncating the second intensity profile within each of first side peaks to define a second transmitted light; and then forming the line image at an image plane from the second transmitted light.

Abstract: Systems and methods for reducing beam instability in laser annealing are disclosed. The method includes: directing a conditioned laser beam through an opening in an aperture using a beam-redirecting element; forming a line image on the surface of the semiconductor wafer by imaging the aperture onto the surface, thereby locally heating the surface to form an annealing temperature distribution; detecting a thermal emission from the locally heated wafer surface; determining the annealing temperature distribution from the detected thermal emission; determining from the annealing temperature distribution a line-image intensity profile that includes a time-varying amount of slope; and adjusting the beam-redirecting element to redirect the laser beam to reduce or eliminate the time-varying amount of slope in the line-image intensity profile.

Abstract: A Wynne-Dyson projection lens for use in an ultraviolet optical lithography system is disclosed, wherein the projection lens is configured to have reduced susceptibility to damage from ultraviolet radiation. The projection lens utilizes lens elements that are made of optical glasses that are resistant to damage from ultraviolet radiation, but that also provide sufficient degrees of freedom to correct aberrations. The glass types used for the lens elements are selected from the group of optical glasses consisting of: fused silica, S-FPL51Y, S-FSL5Y, BSM51Y and BAL15Y.

Abstract: The disclosure is directed to laser annealing of GaN light-emitting diodes (LEDs) with reduced pattern effects. A method includes forming elongate conductive structures atop either an n-GaN layer or a p-GaN layer of a GaN LED structure, the elongate conductive structures having long and short dimensions, and being spaced apart and substantially aligned in the long dimensions. The method also includes generating a P-polarized anneal laser beam that has an anneal wavelength that is greater than the short dimension. The method also includes irradiating either the n-GaN layer or the p-GaN layer of the GaN LED structure through the conductive structures with the P-polarized anneal laser beam, including directing the anneal laser beam relative to the conductive structures so that the polarization direction is perpendicular to the long dimension of the conductive structures.

Abstract: A reaction chamber assembly for thin film deposition processes or the like includes an outer wall assembly for enclosing an outer volume and a removable liner installed into the outer volume through an outer aperture for preventing precursors or reactants from coming into contact with internal surfaces of the outer wall assembly and forming thin film layers thereon. The removable liner encloses a reaction chamber and includes substrate support trays or the like for supporting substrates being coated. Thin film layers are formed onto internal surfaces of the removable liner instead of onto surfaces of the outer wall assembly. The removable liner may be disposable or may comprise stainless steel, which can be removed when contaminated, cleaned by abrasive blasting such as bead blasting, and replaced. Two removable liners can be used to periodically swap removable liners and clean one of the liners while the other is in service with minimal disruption to production coating schedules.

Abstract: A method of performing an oxygen radical enhanced atomic-layer deposition process on a surface of a substrate that resides within an interior of a reactor chamber is disclosed. The method includes forming an ozone plasma to generate oxygen radicals O*. The method also includes feeding the oxygen radicals and a precursor gas sequentially into the interior of the reactor chamber to form an oxide film on the substrate surface. A system for performing the oxygen radical enhanced atomic-layer deposition process is also disclosed.

Abstract: A movable microchamber system with a gas curtain is disclosed. The microchamber system has a top member with a light-access feature and a stage assembly that supports a substrate to be processed. The stage assembly is disposed relative to the top member to define a microchamber and a peripheral microchamber gap. An inert gas is flowed into the peripheral microchamber gap to form the gas curtain just outside of the microchamber. The gas curtain substantially prevents reactive gas in the ambient environment from entering the microchamber when the stage assembly moves relative to the top member.

Abstract: A method of epitaxially growing a final film using a crystalline substrate wherein the final film cannot be grown directly on the substrate surface is disclosed. The method includes forming a transition layer on the upper surface of the substrate. The transition layer has a lattice spacing that varies between its lower and upper surfaces. The lattice spacing at the lower surface matches the lattice spacing of the substrate to within a first lattice mismatch of 7%. The lattice spacing at the upper surface matches the lattice spacing of the final film to within a second lattice mismatch of 7%. The method also includes forming the final film on the upper surface of the transition layer.

Abstract: Systems and methods for measuring an intensity characteristic of a light beam are disclosed. The methods include directing the light beam into a prism assembly that includes a thin prism sandwiched by two transparent plates, and reflecting a portion of the light beam by total-internal-reflection surface to an integrating sphere while transmitting the remaining portion of the light beam through the two transparent plates to a beam dump. The method also includes detecting light captured by the integrating sphere and determining the intensity characteristic from the detected light.

Abstract: Methods of laser processing photoresist in a gaseous environment to improve at least one of etch resistance and line-edge roughness are disclosed. The methods include sequentially introducing first and second molecular gases to the photoresist surface and performing respective first and second laser scanning of the surface for each molecular gas. The first molecular gas can be trimethyl aluminum, titanium tetrachloride or diethyl zinc, and the second molecular gas comprises water vapor. Short dwell times prevent the photoresist from flowing while serving to speed up the photoresist enhancement process.

Abstract: A 1× Wynne-Dyson optical system for microlithography having a variable magnification is disclosed. The 1× Wynne-Dyson optical system has first and second prisms, and a positive lens group that includes a split lens having first and second split lens elements that reside adjacent the first and second prisms, respectively. The first and second split lens elements are axially movable to change the magnification by up to about 500 parts per million. An adjustable positive lens group for a 1× Wynne-Dyson optical system is also disclosed, wherein the positive lens group allows for small changes in the optical system magnification.

Abstract: Methods of laser processing photoresist in a gaseous environment to improve at least one of etch resistance and line-edge roughness are disclosed. The methods include sequentially introducing first and second molecular gases to the photoresist surface and performing respective first and second laser scanning of the surface for each molecular gas. The first molecular gas can be trimethyl aluminum, titanium tetrachloride or diethyl zinc, and the second molecular gas comprises water vapor. Short dwell times prevent the photoresist from flowing while serving to speed up the photoresist enhancement process.

Abstract: Systems and methods for measuring an intensity characteristic of a light beam are disclosed. The methods include directing the light beam into a prism assembly that includes a thin prism sandwiched by two transparent plates, and reflecting a portion of the light beam by total-internal-reflection surface to an integrating sphere while transmitting the remaining portion of the light beam through the two transparent plates to a beam dump. The method also includes detecting light captured by the integrating sphere and determining the intensity characteristic from the detected light.

Abstract: Systems and methods are disclosed for performing laser annealing in a manner that reduces or minimizes wafer surface temperature variations during the laser annealing process. The systems and methods include annealing the wafer surface with first and second laser beams that represent preheat and anneal laser beams having respective first and second intensities. The preheat laser beam brings the wafer surface temperate close to the annealing temperature and the anneal laser beam brings the wafer surface temperature up to the annealing temperature. The anneal laser beam can have a different wavelength, or the same wavelength but different orientation relative to the wafer surface. Reflectivity maps of the wafer surface at the preheat and anneal wavelengths are measured and used to select the first and second intensities that ensure good anneal temperature uniformity as a function of wafer position. The first and second intensities can also be selected to minimize edge damage or slip generation.

Abstract: A betavoltaic power source for mobile devices and mobile applications includes a stacked configuration of isotope layers and energy conversion layers. The isotope layers have a half-life of between about 0.5 years and about 5 years and generate radiation with energy in the range from about 15 keV to about 200 keV. The betavoltaic power source is configured to provide sufficient power to operate the mobile device over its useful lifetime.

Abstract: Laser annealing systems and methods for annealing a semiconductor wafer with ultra-short dwell times are disclosed. The laser annealing systems can include one or two laser beams that at least partially overlap. One of the laser beams is a pre-heat laser beam and the other laser beam is the annealing laser beam. The annealing laser beam scans sufficiently fast so that the dwell time is in the range from about 1 ?s to about 100 ?s. These ultra-short dwell times are useful for annealing product wafers formed from thin device wafers because they prevent the device side of the device wafer from being damaged by heating during the annealing process. Embodiments of single-laser-beam annealing systems and methods are also disclosed.

Abstract: An LED-based photolithographic illuminator with high collection efficiency is disclosed. The illuminator utilizes an array of LEDs, wherein each LED has an LED die and a heat sink. The LED dies are imaged onto the input end of a homogenizer rod to substantially cover the input end without inclusion of the non-light-emitting heat sink sections of the LED. A microlens array is used to image the LED dies. The collection efficiency of the illuminator is better than 50% and the illumination uniformity at the output end of the light homogenizer is within +/?2%.