Abstract: The invention concerns a system and method for reconstructing a physiological signal of an artery/tissue/vein system of an organ in a surface space. Said method is implemented by processing means of a processing unit of a functional imaging analysis system, and comprises a step for reconstructing said physiological signal from a piece of experimental data of a region of interest comprising an elementary volume—called a voxel—of said organ and a surface mesh describing said surface space. The invention differs from known methods in particular in terms of the high accuracy of same and the robustness thereof to noise.

Abstract: In one aspect the application relates to a computing system for providing data for modelling a human brain comprises a database including a plurality of datasets (or allow access to a plurality of datasets), each dataset including at least a dynamical model of the brain including at least one node and a neurodataset of a neuroimaging modality input. The at least one node include a representation of a local dynamic model and a parameter set of the local dynamic model.

Abstract: A method for operating a sense amplifier in a one-switch one-resistance (1S1R) memory array, includes: generating a regulated full voltage and a regulated half voltage; applying the regulated full voltage and regulated half voltage to selected and unselected bit lines of the 1S1R memory array during read operations as an applied read voltage; and inducing and compensating for a sneak-path current during read operations by adjusting the applied read voltage based on the cell state of an accessed bit cell and an amplitude of the sneak-path current.

Abstract: The present invention particularly relates to a method for physical vacuum deposition of a coating (R) comprising at least one material (M) on at least a portion of a front face (10) of a support (1), said at least one material (M) originating from an evaporation source or an atomisation source (2), wherein: —use is made of a support (1), at least a portion of the front face (10) of which is smooth, that is to say, does not have any roughness and/or reliefs and/or recesses; —said vacuum deposition is carried out while varying the thickness distribution of the material (M) on said front face (10), that is, while progressively varying the thickness deposited, from a central region (11) in the direction of at least one lateral region (12) contiguous to the central region (11), without modifying the position of the evaporation source or atomisation source (2) of the material particles (M).

Abstract: A method for operating a sense amplifier in a one-switch one-resistance (1S1R) memory array, includes: generating a regulated full voltage and a regulated half voltage; applying the regulated full voltage and regulated half voltage to selected and unselected bit lines of the 1S1R memory array during read operations as an applied read voltage; and inducing and compensating for a sneak-path current during read operations by adjusting the applied read voltage based on the cell state of an accessed bit cell and an amplitude of the sneak-path current.

Abstract: Memory devices such as phase change memory (PCM) devices utilizing Ovonic Threshold Switching (OTS) selectors may be used to fill the gap between dynamic random-access memory (DRAM) and mass storage and may be incorporated in high-end microcontrollers. Since the programming efficiency and reading phase efficiency of such devices is directly linked to the leakage current of the OTS selector as well as sneak-path management, a sense amplifier disclosed herein generates an auto-reference that takes into account the leakage currents of unselected cells and includes a regulation loop to compensate for voltage drop due to read current sensing. This auto-referenced sense amplifier, built utilizing the principle of charge-sharing, may be designed on a 28 nm fully depleted silicon-on-insulator (FDSOI) technology, provides robust performance for a wide range of sneak-path currents and consequently for a large range of memory array sizes, and is therefore suitable for use in embedded memory in high-end microcontroller.

Abstract: Memory devices such as phase change memory (PCM) devices utilizing Ovonic Threshold Switching (OTS) selectors may be used to fill the gap between dynamic random-access memory (DRAM) and mass storage and may be incorporated in high-end microcontrollers. Since the programming efficiency and reading phase efficiency of such devices is directly linked to the leakage current of the OTS selector as well as sneak-path management, a sense amplifier disclosed herein generates an auto-reference that takes into account the leakage currents of unselected cells and includes a regulation loop to compensate for voltage drop due to read current sensing. This auto-referenced sense amplifier, built utilizing the principle of charge-sharing, may be designed on a 28 nm fully depleted silicon-on-insulator (FDSOI) technology, provides robust performance for a wide range of sneak-path currents and consequently for a large range of memory array sizes, and is therefore suitable for use in embedded memory in high-end microcontroller.

Abstract: Chemoenzymatic process for coproducing a disulfide and a sulfoxide or a sulfone The present invention relates to a chemoenzymatic process for coproducing disulfide and sulfoxide or sulfone from a composition M comprising: 1) a sulfide, 2) optionally an oxidizing agent, 3) an organic compound bearing at least one thiol group, 4) an enzyme E catalyzing the oxidation of said sulfide to sulfoxide or to sulfone, 5) an enzyme D catalyzing the formation of a disulfide bridge between two equivalents of said organic compound bearing at least one thiol group to form a dimer, and 6) a cofactor common to the two enzymes E and D; and also to a composition enabling especially the implementation of this process. The present invention also relates to the use of a mercaptan for reducing a disulfide bridge formed between two equivalents of an organic compound bearing at least one thiol group, and more particularly to the use thereof as regeneration substrate of the process described above.

Abstract: A seismic wave shield for protecting an area from seismic vibrations and a method of shielding an area from seismic waves by installing a seismic wave shield. The seismic wave shield comprises a set of columns embedded in regolith and in contact with bedrock. There is a material contrast between a material forming the columns and the regolith.

Abstract: In one aspect the application relates to a computing system for providing data for modelling a human brain comprises a database including a plurality of datasets (or allow access to a plurality of datasets), each dataset including at least a dynamical model of the brain including at least one node and a neurodataset of a neuroimaging modality input. The at least one node include a representation of a local dynamic model and a parameter set of the local dynamic model.

Abstract: The present invention relates to a selective process for preparing sulfones from sulfides by enzymatic catalysis, and to a composition comprising a symmetrical sulfide, an oxidoreductase enzyme catalyzing the oxidation of said symmetrical sulfide to symmetrical sulfone; optionally at least one cofactor C of said enzyme E; and an oxidant, which allows in particular the implementation of said process.

Abstract: The present invention relates to a selective process for preparing sulfoxides from sulfides by enzymatic catalysis, and to a composition comprising a symmetrical sulfide, an oxidoreductase enzyme catalyzing the oxidation of said symmetrical sulfide to symmetrical sulfoxide; optionally at least one cofactor C of said enzyme E; and an oxidant, which allows in particular the implementation of said process.

Abstract: A one-piece device for detecting particles with semiconductor material includes a substrate layer and at least one additional layer disposed on a first face of the substrate layer so as to form at least one first detector comprising a first space charge zone through which a beam of particles passes and first collector means for charge carriers produced by this passage. It further includes at least one other additional layer disposed on a second face of the same substrate layer, opposite the first face, so as to form at least one second detector comprising a second space charge zone through which the beam of particles also passes and second collector means for charge carriers produced by this passage.

Abstract: The present invention concerns heterocyclic naphthoquinones derivatives for use in the treatment of Cushing disease and other cancers, in particular via the inhibition of Ubiquitin Specific Proteases (USP) 8 and/or 2.

Abstract: The present invention particularly relates to a method for physical vacuum deposition of a coating (R) comprising at least one material (M) on at least a portion of a front face (10) of a support (1), said at least one material (M) originating from an evaporation source or an atomisation source (2), wherein:—use is made of a support (1), at least a portion of the front face (10) of which is smooth, that is to say, does not have any roughness and/or reliefs and/or recesses;—said vacuum deposition is carried out while varying the thickness distribution of the material (M) on said front face (10), that is, while progressively varying the thickness deposited, from a central region (11) in the direction of at least one lateral region (12) contiguous to the central region (11), without modifying the position of the evaporation source or atomisation source (2) of the material particles (M).

Abstract: The present invention relates to new borondifluoride complexes of curcuminoid compounds with an enhanced fluorescence quantum yield and emission, and their uses as fluorophore in various fields such as bioimaging, therapeutics, theranostics, display and telecommunication technologies, photovoltaics. The preparation said compounds is also described.

Abstract: The present invention relates to a dinitroxide biradical compound of general formula (I): In formula (I), A is a carbon, an ammonium, or a phosphonium; each of A1 to A6 is a single bond, O, N, N(O), S, S(O), SO2, C(O), or a (C1-C4) alkyl chain; and Z1 and Z2 are selected from R1 and R2 in combination, so that there is always at least one R2 group that is substituted with R3 group. In Z1 and Z2, R1 is an H, an aryl, or a heteroaryl; R2 is an alkyl chain, an alkenyl chain, an alkynyl chain, a cycloalkyl, a heterocycloalkyl, an aryl, or a heteroaryl; and R3 is an alkyl chain, an alkenyl chain, an alkynyl chain, a cycloalkyl, a heterocycloalkyl, an aryl, a heteroaryl, an ether, an ester, or an azide. When Z1 and Z2 are combined together with the same carbon atom of the nitroxide ring to which they are bonded, they form a spirocycloalkyl or a spiroheterocycloalkyl, the spirocycloalkyl or the spiroheterocycloalkyl being substituted with R3.

Abstract: This method (100) for automatic propagation into an (N+1)-th dimension of an image segmentation initialized in dimension N, N?2, comprises the acquisition (102) of an ordered series of image representations of dimension N and an initial segmentation (104) in dimension N of a region of interest in the first and last image representations of the series, to obtain first and last initial segmentation masks (M0, Mn) of the region of interest. It further comprises an estimation (106) of registration parameters (La, Ld) between the first and last initial segmentation masks, and upward and downward automatic propagations (108) of the initial segmentation, from the first and last image representations, to all the other image representations of the series by step-by-step registration up to the last and first image representations.

Abstract: A subject of the present invention is the use of a compound having the general formula (I): (I) wherein V, W, X4, X5, X6, X7, X?4, X?5, X?6, X?7, Y, Y?, R3, R?3, R4 and R?4 are as defined in any one of claims 1 to 11, for the detection, capture and/or separation of polluting gases, in particular those selected from the group comprising carbon dioxide, methane, sulfur dioxide, nitrogen oxides, carbon monoxide, linear hydrocarbons, linear mono-olefins and their mixtures, and preferably carbon dioxide. Another subject of the invention is a compound of formula (I) wherein V, W, X4, X5, X6, X7, X?4, X?5, X?6, X?7, Y, Y?, R3, R?3, R4 and R?4 are as defined in any one of claims 12 to 21.

Abstract: The disclosure relates to a method for producing hydrogen gas and/or magnetite comprising the steps of reacting a wüstite-containing material, such as steel slags, with H2O at a temperature ranging from 150° C. to 500° C., cooling down the gaseous reaction product to separate hydrogen gas from water steam and collecting hydrogen gas, and recovering magnetite from the solid reaction product.