Abstract: A method for operating a sense amplifier in a one-switch one-resistance (1S1R) memory array, includes: generating a regulated full voltage and a regulated half voltage; applying the regulated full voltage and regulated half voltage to selected and unselected bit lines of the 1S1R memory array during read operations as an applied read voltage; and inducing and compensating for a sneak-path current during read operations by adjusting the applied read voltage based on the cell state of an accessed bit cell and an amplitude of the sneak-path current.

Abstract: A measurement core for measuring nuclear heating, the core extending in a longitudinal direction and having a main plane, includes at least: a first layer of material, forming a first sample; a first thin layer of electrical insulation on the first sample; a thin conductive layer forming a heating electrical resistor on the first layer of electrical insulation; and a second thin layer of electrical insulation on the heating electrical resistor. A calorimetric sensor includes: an outer jacket; a gas contained in the jacket; a measurement core disposed in the jacket; a link for holding the core in the jacket and transferring the heat between the core and the jacket; and temperature measurement capable of measuring the temperature at a hot point, and the temperature at a cold point.

Abstract: The electronic circuit performs binary computation operations and comprises word, bit and source lines, and memory cells organized in rows and columns. Each cell includes one pair of memristors and one pair of switches, each memristor being connected to a switch and linked to the same source line during each computation operation, each pair of memristors storing a binary value; the switches being linked to a word line and to a pair of complementary bit lines. The circuit comprises a reading module including: a logic unit for each column, each comprising an input terminal connected to a source line to receive a column value, the logic unit toggling between values, depending on a comparison of the column value with a toggle threshold value; a modification unit for modifying, for at least one logic unit and depending on the computation operation, a difference between the column and threshold values.

Abstract: A vascular prosthesis may be implanted in a vessel, having substantially a T-shape, that includes a proximal tubular part forming the base of the “T” and a distal tubular part forming the head of the “T”. The second end portion of the distal tubular part is formed by a flap. The flap is opposed to a circumferential indentation in the deployed position. The structural frame of the flap includes an arched segment connected at its ends to the intermediate portion of the distal tubular part. The arched segment is bendable so as to form a joint for the folding/unfolding movement of the flap.

Abstract: According to one aspect, the invention relates to a device (200) for transporting and controlling light beams comprising a light guide (40) comprising a bundle (50) of uncoupled single-mode optical fibers (Fi), each single-mode optical fiber (Fi) being intended to receive an elementary light beam (B1i) at a proximal end and to emit a light beam (B2i) at a distal end, said bundle of single-mode optical fibers comprising, in operation, a minimum radius of curvature corresponding to a maximum curvature of the bundle of fibers.

Abstract: A method for automatically detecting elements of interest in electrophysiological signals includes: delivering electrophysiological signals; producing a whitened time-frequency representation of the electrophysiological signals; setting a threshold; applying this threshold to the whitened time-frequency representation; and, in the whitened time-frequency representation, detecting local maxima that are higher than or equal to the applied threshold.

Abstract: The disclosure may relate to a method for the characterization of the 3D orientation of an emitting dipole within a specimen. The method comprises splitting a light beam emitted by the emitting dipole and exiting an objective lens into a first and a second beams; spatially filtering said first beam by using a spatial frequency filter; splitting each of said filtered first beam and said second beam into two beams linearly polarized using polarizing beam splitters; detecting with an optical detection unit four beams linearly polarized in a detection plane optically conjugated with the front focal plane of said microscope objective lens; determining, from four intensity images, in a predefined frame of the specimen, the mean orientation and the angular aperture of the distribution of the 3D orientation of the emitting dipole, during an acquisition time of said four intensity images.

Abstract: This dosimeter comprises: a transducer material capable, when it is excited by a secondary ionizing radiation, of generating photons or electric charges, an amplifying layer capable, in response to its excitation by the primary ionizing radiation, of generating the secondary ionizing radiation. This amplifying layer comprises a first and a second amplifying sublayer stacked on top of one another. The first and the second amplifying sublayers are composed of at least 70%, by weight, respectively, of at least one first and one second material, the atomic numbers of which are greater than or equal to 29. The atomic number of the first material being less than the atomic number of the second material. The first sublayer is interposed between the second sublayer and the transducer material.

Abstract: Described herein are anti-CD277 antibodies which: activates or inhibit the cytolytic function of V?9/V?2 T cells, and/or costimulates T cells together with CD3-TCR, and/or costimulates T cells in addition to CD28-B7 costimulation, and/or increases the activity and/or survival of monocytes and dendritic cells. The use of said antibodies in therapy is also described.

Abstract: A device for determining a measurand, includes a first pattern made from a first conductive material, the first pattern having a first impedance and having a first end and a second end spaced apart from the first end, a second pattern at least arranged between the first end and the second end of the first pattern, being in electrical contact with the first pattern. The second pattern has a second impedance that changes continuously as a function of the measurand, such that the impedance or the inductance of the assembly formed by the first and second patterns changes continuously as a function of the measurand. The device also comprises a means for determining the impedance or the inductance of the assembly, formed by the first and second patterns.

Abstract: The present description concerns a memory device (200) including a non-volatile memory circuit (101); a buffer memory circuit (203) comprising a volatile memory circuit (221); an input-output circuit (105); a first data link (104) coupling the non-volatile memory circuit (101) to the buffer memory circuit (203); a second data link (106) coupling the buffer memory circuit (203) to the input-output circuit (105); and a control circuit (225), wherein the buffer memory circuit (203) is adapted to implementing calculations having as operands data stored in the volatile memory circuit (221).

Abstract: Memory devices such as phase change memory (PCM) devices utilizing Ovonic Threshold Switching (OTS) selectors may be used to fill the gap between dynamic random-access memory (DRAM) and mass storage and may be incorporated in high-end microcontrollers. Since the programming efficiency and reading phase efficiency of such devices is directly linked to the leakage current of the OTS selector as well as sneak-path management, a sense amplifier disclosed herein generates an auto-reference that takes into account the leakage currents of unselected cells and includes a regulation loop to compensate for voltage drop due to read current sensing. This auto-referenced sense amplifier, built utilizing the principle of charge-sharing, may be designed on a 28 nm fully depleted silicon-on-insulator (FDSOI) technology, provides robust performance for a wide range of sneak-path currents and consequently for a large range of memory array sizes, and is therefore suitable for use in embedded memory in high-end microcontroller.

Abstract: Novel anti-human CD25 antibodies and their use for treating cancer and infectious diseases. Also, a nucleic acid encoding an anti-human CD25 antibody or an antigen-binding fragment thereof, and a fusion protein including an isolated anti-human CD25 antibody or an antigen-binding fragment thereof. Further, a pharmaceutical composition including an isolated anti-human CD25 antibody or an antigen-binding fragment thereof.

Abstract: Novel anti-human CD25 antibodies or antigen-binding fragments thereof and their use for treating cancer and infectious diseases. Also, a nucleic acid encoding an anti-human CD25 antibody or antigen-binding fragment thereof, and a fusion protein including an isolated anti-human CD25 antibody or antigen-binding fragment thereof. Further, a pharmaceutical composition including an isolated anti-human CD25 antibody or antigen-binding fragment thereof.

Abstract: A percutaneous bypass method for implanting a bypass graft between two vessels is described. The bypass graft comprises a first part and a second part, each having a tubular shape and comprising respective lumens. The method comprises the step of inserting a second sheath, from the outside to the inside of a bypass portion of the first part, through a puncture therein, and retracting the second sheath so as to deploy and implant a hook portion of the second part into the second vessel, and deploy a bypass portion of the second part outside the second vessel, from the second vessel to the first part, and within the lumen of the first part.

Abstract: A memory cell, includes first and second main terminals, an auxiliary terminal; M memristor(s) between the main terminals, M?1; M primary switch(es), each in parallel with a memristor; and a secondary switch between the second main terminal and the auxiliary terminal. It is configured for writing to at least one memristor by opening each primary switch in parallel with the at least one memristor, closing each other primary switch, closing the secondary switch and applying a corresponding programming voltage between the first main terminal and the auxiliary terminal; and for reading at least one memristor by opening each primary switch in parallel with the at least one memristor, closing each other possible primary switch, opening the secondary switch and measuring a corresponding electrical quantity between the main terminals.

Abstract: The use of UV-activated Copper Radical Oxidase (CRO) enzymes in the implementation of oxidation reactions. Also, a process for oxidizing organic compounds using enzymes which are activated by UV light. The process also leads to concomitant formation of hydrogen peroxide, that can optionally be used in hydrogen peroxide mediated processes. Further, the process relates to the oxidation of alcohols in aldehydes.

Abstract: A system is described for emitting a radiofrequency field for a magnetic resonance imaging device, including a volumetric antenna that emits a radiofrequency field, a device for homogenizing the radiofrequency field arranged between said volume antenna and a part of the body to be imaged. The device may include a first continuous metal track with an overall length of approximately 0.5 to approximately 1.5 times said wavelength of the radio frequency field. The first metallic track may occupy a surface with a largest dimension ranging between approximately 5% and approximately 15% of said wavelength of the radio frequency field. The first metal track is arranged in a pattern including a plane of symmetry that is normal to the electrical component of the radio frequency field, so as to give the device an electric dipole property including a natural frequency strictly greater than the frequency of the radio frequency field.

Abstract: Memory devices such as phase change memory (PCM) devices utilizing Ovonic Threshold Switching (OTS) selectors may be used to fill the gap between dynamic random-access memory (DRAM) and mass storage and may be incorporated in high-end microcontrollers. Since the programming efficiency and reading phase efficiency of such devices is directly linked to the leakage current of the OTS selector as well as sneak-path management, a sense amplifier disclosed herein generates an auto-reference that takes into account the leakage currents of unselected cells and includes a regulation loop to compensate for voltage drop due to read current sensing. This auto-referenced sense amplifier, built utilizing the principle of charge-sharing, may be designed on a 28 nm fully depleted silicon-on-insulator (FDSOI) technology, provides robust performance for a wide range of sneak-path currents and consequently for a large range of memory array sizes, and is therefore suitable for use in embedded memory in high-end microcontroller.

Abstract: The present invention relates to a conjugated compound comprising a marker M pharmaceutically acceptable, and a peptide or pseudo-peptide P having at most 30 amino acid residues and able to bind the Low-Density Lipoprotein Receptor (LDLR) and to its use in a method of labelling and/or detecting and/or treating cancerous cells in a subject by administration of the conjugated compound to the subject an analysis of the presence and/or the amount of marker.