Abstract: An extreme UV radiation producing device in which adhesion of solid tin in the vacuum pump of an evacuation device is restricted, so that the maintenance period and the replacement period of the pump is prolonged is achieved by the provision of a treatment unit between a radiation source chamber and the evacuation device. The treatment device has a hydrogen radical producing part in which tin and/or a tin compound in the evacuated gas from the radiation source chamber is/are made into a tin hydride; and a heat treatment part in which the tin hydride is thermally decomposed and in which the tin produced liquefied and separated from the evacuated gas. The liquid tin is fed into a collecting/storage vessel and the evacuated gas from which the tin and/or a tin compound has been removed fed to the evacuation device.

Abstract: A filament lamp in which the article to be treated can be uniformly heated, and in which the disadvantage of poor sealing or the like does not arise even in the case of inserting a host of metal foils into a hermetically sealed portion is achieved in a filament lamp in the bulb of which there are several filament bodies, in which filaments and leads for supply of power to the filaments are connected to one another, and in which, on an end of the bulb, there is a hermetically sealed portion in which there is a rod-shaped sealing insulator on the periphery of which several electrically conductive components that are connected to the filaments are arranged spaced from one another.

Abstract: Process for producing a discharge lamp having a silica discharge vessel with an emission space in which there is a pair of electrodes at least 0.15 mg/mm3 of mercury, argon (Ar), and halogen by measuring the relation b/a1 between the emission intensity a1 of argon (Ar) at a wavelength of 668 nm and the emission intensity b of OH radicals at a wavelength of 309 nm in a state of glow discharge of the discharge lamp; supplying hydrogen into the discharge vessel of the discharge lamp; measuring the relation c/a2 between the emission intensity a2 of argon (Ar) at a wavelength of 668 nm and the emission intensity c of OH radicals at a wavelength of 309 nm in the state of glow discharge of the discharge lamp; and fixing the difference c/a2?b/a1 at a value in the range of 0.001 to 15.

Abstract: A laser diode chip that yields high irradiance and radiant efficiency, and that emits light having a broad wavelength width and can be used as an element in a light source for an illumination device, and its production method. The laser diode chip has at least a first clad layer, an active layer, and a second clad layer stacked in that order on a substrate, is constructed of a specified combination of constituent materials for the first clad layer, active layer, and second clad layer, and has multiple, parallel, slot-shaped concavities formed in the upper surface of the second clad layer, in each of which a liquid oxide film is baked to form a current arctation layer. Light emitting points are formed in the active layer in each of the light emitting unit areas demarcated by the current arctation layers, the maximum depth of which is 5.0 ?m or less.

Abstract: An LED chip production method in which the sapphire substrate used in the process for formation of a nitride semiconductor can be easily and efficiently removed. The LED chip production method is a method for LED chips that has at least one nitride semiconductor layer. An LED chip structure assembly with a construction in which a nitride buffer layer is formed on the sapphire substrate and the at least one nitride semiconductor layer is formed on the nitride buffer layer which is then subjected to a chemical etching process to remove the nitride buffer layer, thereby facilitating removal of the sapphire substrate.

Abstract: A filament lamp includes multiple filament assemblies having filaments connected to paired leads, arrayed in order within a light emitting tube and following a tube axis thereof. Each lead is electrically connected in a seal area. Each filament is powered independently. The light emitting tube includes insulating walls or inner tubes between the filaments and leads that have openings through which the leads pass, and located along the tube axis in proximity to the inner wall of the light emitting tube. Multiple lead accommodation spaces corresponding to the number of leads are provided in the light emitting tube by the insulating walls with each lead passing through an opening in the insulating wall and placed without short circuits in its lead accommodation space.

Abstract: To provide a filament lamp and light irradiation type heat treatment device that eliminates device-by-device variation of the irradiation-intensity distribution on the article to be treated, a filament lamp (1) has multiple filament assemblies (41 to 45) with coiled filaments (411 to 451) connected to leads (412a to 452a, 412b to 452b) that supply electrical power to the filaments arranged within a tubular bulb (3), which is formed with hermetic seal areas (2a, 2b), extending along the bulb axis of the bulb, with power being supplied to each filament independently by electrical connection of the leads of the filament assemblies to multiple conductive parts (81a to 85a, 81b to 85b) located in the seal areas, and in which the leads (412a to 452a, 412b to 452b) of the filament assemblies (41 to 45) are inserted through the inside of the filaments (411 to 451).

Abstract: To suppress the adherence of debris as a result of a radiating fuel, such as tin or the like, within a vessel for forming high density and high temperature plasma of an extreme UV radiation source device, and to eliminate deposited tin and/or tin compounds with high efficiency, hydrogen radical producing parts are provided in the vessel; and hydrogen radicals are produced in the vessel so that deposition of tin and/or a tin compound is suppressed in the area with a low temperature of the device, such as a focusing mirror or the like, and the deposited tin and/or tin compound is eliminated.

Abstract: A LED device formed of LED chips bonded to an exoergic member by the LED chips being bonded to an Au—Sn alloy layer formed on an upper surface of the exoergic member with columnar crystals being formed within the Au—Sn alloy layer extending in a direction perpendicular to the upper surface of the exoergic member. The method of producing the LED device forms an Sn film directly on the upper surface of the exoergic member, an Au film on a lower surface of the LED chips, mounts the LED chips with the Au film thereon onto the Sn film formed on the upper surface of the exoergic member, and the exoergic member with LED chips mounted thereon is heated in an atmosphere in which a forming gas flows, so that the LED chips are bonded to the exoergic member.

Abstract: A microchip testing device with a microchip having an absorbance measuring chamber for measuring absorbance, a transmitted light receiving unit for receiving light which has been emitted from a light source and has been transmitted through the absorbance measuring chamber, an aperture which extends in a straight line in the direction of the optical axis of the absorbance measuring chamber, with an entry opening for the light emitted by the light source on one end and a light exit opening on an opposite end from which the light enters the absorbance measuring chamber, an incident light beam splitter which is located in the optical path between the light exit opening of the aperture and the absorbance measuring chamber and which transmits part of the incident light and reflects another part of it, and a reflected light receiving part for receiving the light which has been reflected by the beam splitter.

Abstract: To shorten the luminous flux rise time and prevent melting/deformation of the projections in the initial ignition period of high pressure discharge lamps that have a sealed mercury volume of no less than 0.20 mg/mm3, a power supply device feeds a current that exceeds the maximum current value of the constant power control period to the high pressure discharge lamp during a first control period from the initial discharge until the lamp voltage reaches a specified lamp voltage and causes a switch to constant power control, and then, during the following period until a change to steady power control, the power supply device feeds it a current that is less than the maximum current during regular operation.

Abstract: A light source device for a projector device having a discharge lamp with a silica glass discharge vessel containing a pair of opposed electrodes and at least 0.15 mg/mm3 of mercury, a concave reflector which surrounds the discharge lamp and reflects light emitted from the discharge lamp in a given direction, and a power supply device which selectively supplies a first wattage and a lower second wattage, is provided with a reflection heating arrangement which, in operation of the discharge lamp with the lower second wattage, returns at least part of the light emitted by the discharge lamp in the direction of the discharge lamp, and in operation of the discharge lamp at the first, higher wattage returns less light than in operation with the second wattage in the direction of the discharge lamp.

Abstract: An extreme ultraviolet (EUV) light source device and foil trap, the device including a vessel; an EUV radiating species supply means that feeds an extreme ultraviolet radiating species into the vessel; a discharge part with discharge electrodes that heat and excite the EUV radiating species and generate a high-temperature plasma; a collector mirror collecting EUV radiation emitted from the plasma; the foil trap installed between the discharge part and the mirror; an extractor part extracting the collected radiation; and an evacuation means exhausting and regulating pressure within the vessel. The foil trap includes foils extending radially from a main axis thereof to capture debris from the light source, while allowing the emitted radiation to pass through a region thereof to the mirror. A length of at least part of the foils in directions parallel to the main axis is shorter in positions close to the main axis than distant therefrom.

Abstract: A heating device of the light irradiation type having an article to be heated, a guard ring located on the periphery of that article, multiple lamps located above the article to be heated and the guard ring, and a reflecting mirror located above the lamps, in which a light diffusion part is located in the upper region corresponding to the article to be heated so that the diffused light projects onto the entire surface of the article to be heated. The light diffusion part can be formed, for example, on a reflecting mirror, an optically transparent window part located between the article to be heated and the lamps or a light diffusion area formed on the light-emitting bulbs of the lamps. The size of the region occupied by the light diffusion part is such that diffused light is not projected to the guard ring.

Abstract: To provide an optical apparatus that can use a lamp's radiant energy efficiently and that is suited to demands for smaller size.

Abstract: A filament lamp comprising a bulb which has a hermetically sealed portion on at least one end and multiple filament assemblies, each filament assembly comprising a coiled filament and connected leads to supply power to that filament, the filament assemblies being sequentially arranged in the axial direction of the bulb, the leads of each filament assembly being electrically connected to respective multiple conductive parts set in the sealed portions, and power being independently suppliable to each of the filaments. A respective one of the coiled filaments is located in a respective first quadrant formed by intersecting planes that are perpendicular to each other and that are tangent to an outer coil diameter of the respective coiled filament. The leads are positioned in quadrants other than the quadrant in which the coiled filament is located. A light irradiation type heat treatment apparatus uses a plurality of such filament lamps.

Abstract: A microchip analysis device in which the effect of changes in the quantity of light of a discharge lamp of the short arc type can be reduced and measurement results with high reliability can be obtained is achieved in microchip measurement device which has a light source lamp and a lamp operating device, in which the light from the lamp is transmitted by a fill part for the liquid of the microchip to be tested, and in which the quantity of this transmitted light and based on the data obtained the decadic extinction of the liquid to be tested are measured, a device determines the fluctuation of the quantity of light from the light source lamp. Based on data from this device, a control interrupts or stops the detection of the quantity of the light transmitted by the microchip when the fluctuation is outside a preset range.

Abstract: A high pressure discharge lamp in which the cathode has a cylindrical body part and a conical part which is doped with thorium dioxide (ThO2), and with a diameter which decreases in a direction from the body part toward the tip area of the conical part by at least one light receiving surface area being formed between the body part and the tip area of the cone in a base part of the conical part. The light receiving area lies at an angle with respect to the center axis of the conical part and the body part, said angle which is measured from the side of the body part being greater than the angle of inclination which is formed between the outer periphery of the conical part in the tip area of the cone and the center axis.

Abstract: A lamp arrangement with a lamp and a base which is located on a hermetically sealed portion of the lamp. The base comprises a hollow cylindrical lamp holding part which holds and secures the hermetically sealed portion of the lamp, a bottom which borders the lower end of the lamp holding part, which end faces away from the lamp; and feed components which project from the back end face of the bottom, which end face faces away from the lamp. Between the lamp holding part and the bottom, a heat insulator is formed in which the amount of heat transferred in the axial direction of the base is less than the amount of heat transferred away from the base.

Abstract: A device for measuring the reflection factor by irradiating a measurement area of a microchip with light, and in which a light receiving part is made to receive light reflected from the measurement area for determination of the reflection factor of the measurement area. The light receiving part is located in an angular region ?, satisfying the relationship (½)????sin?1(1/n) and being located between angles ?min and ?max, ?min and ?max (in°) being angles which the reflection light forms with respect to a normal on the edge of the irradiated surface of the area to be measured in a virtual plane which contains the emission center of the light emitting part and which is perpendicular to the microchip, wherein ?min is ½ ? and ?max corresponds to sin?1(1/n), where ? (°) is the scattering angle of the light radiated by the light emitting part which is located directly above the area to be measured, and wherein n is the index of refraction of the transparent component.