Abstract: An MOCVD reactor such as a rotating disc reactor (10) is equipped with a gas injector head having diffusers (129) disposed between adjacent gas inlets. The diffusers taper in the downstream direction. The injector head desirably has inlets (117) for a first gas such as a metal alkyl disposed in radial rows which terminate radially inward from the reactor wall to minimize deposition of the reactants on the reactor wall. The injector head desirably also has inlets (125) for a second gas such as ammonia arranged in a field between the rows of first gas inlets, and additionally has a center inlet (135) for the second gas coaxial with the axis of rotation.

Abstract: A force scanning probe microscope (FSPM) and associated method of making force measurements on a sample includes a piezoelectric scanner having a surface that supports the sample so as to move the sample in three orthogonal directions. The FSPM also includes a displacement sensor that measures movement of the sample in a direction orthogonal to the surface and generates a corresponding position signal so as to provide closed loop position feedback. In addition, a probe is fixed relative to the piezoelectric scanner, while a deflection detection apparatus is employed to sense a deflection of the probe. The FSPM also includes a controller that generates a scanner drive signal based on the position signal, and is adapted to operate according to a user-defined input that can change a force curve measurement parameter during data acquisition.

Abstract: A capacitance probe for thin dielectric film characterization provides a highly sensitive capacitance measurement method and reduces the contact area needed to obtain such a measurement. Preferably, the capacitance probe is connected to a measurement system by a transmission line and comprises a center conductive tip and RLC components between the center conductor and the ground of the transmission line. When the probe tip is in contact with a sample, an MIS or MIM structure is formed, with the RLC components and the capacitance of the MIS or MIM structure forming a resonant circuit. By sending a driving signal to the probe and measuring the reflected signal from the probe through the transmission line, the resonant characteristic of the resonant circuit can be obtained. The capacitance of the MIS or MIM structure is obtainable from the resonant characteristics and the dielectric film thickness or other dielectric properties are also extractable.

Abstract: A collimated light is used in combination with a compensation element and an aberration-corrected objective with a long working distance to produce a greatly improved fringe contrast in the measurement of a sample surface through a dispersive element. When the dispersive element consists of a fixed cover with substantially consistent characteristics from sample to sample, the compensation element is a plate that matches the optical characteristics of the dispersive element. When the dispersive element varies, the compensation element consists of a variable-thickness transmissive element embodied in a pair of half-cube prisms is adapted to slide along the beam-splitting plane, thereby permitting the adjustment of the optical path-length through the splitter in the reference-beam direction while retaining unchanged the optical path-length in the test-beam direction.

Abstract: Probes for use in a scanning probe microscope and methods of manufacturing such probes. Each probe includes a probe tip having a substantially vertical sidewall formed by an anisotropic etching process and a flared post underlying the probe tip that is formed by an etching process that is not anisotropic. A source gas comprising a bromine-containing gas and an oxygen-containing gas is used to etch the probe tip and flared post of the probe in a batch process. The probe tips may be qualified using any suitable criterion for use by a customer in an atomic force microscope without individual inspection.

Abstract: A system and method for uniform deposition of material layers on wafers in a rotating disk chemical vapor deposition reaction system is provided, wherein a plurality of wafers are rotated on a susceptor at a first rate around a first axis by a first motor, and the plurality of wafers rotate independently exhibiting planetary motion at a second rate through application of a vibrational force from a vibration source in a direction transverse to the first axis of rotation.

Abstract: An ion source is cooled using a cooling plate that is separate and independent of the anode. The cooling plate forms a coolant cavity through which a fluid coolant (e.g., liquid or gas) can flow to cool the anode. In such configurations, the magnet may be thermally protected by the cooling plate. A thermally conductive material in a thermal transfer interface component can enhance the cooling capacity of the cooling plate. Furthermore, the separation of the cooling plate and the anode allows the cooling plate and cooling lines to be electrically isolated from the high voltage of the anode (e.g., using a thermally conductive, electrically insulating material). Combining these structures into an anode subassembly and magnet subassembly can also facilitate assembly and maintenance of the ion source, particularly as the anode is free of coolant lines, which can present some difficulty during maintenance.

Abstract: A method and apparatus for manipulating the surface of a sample including a cantilever, a first tip mounted on the cantilever, and a second tip mounted on the cantilever, the first and the second tip being configured to combine to form an imaging probe and to separate to form a manipulation probe. The first and second tips are configured to form a first position characterized in that the tips combine to form an imaging tip and the first and the second tip are configured to form a second position characterized in that the tips separate to manipulate particles on a surface of a sample. The tips can be configured to form the first position when a voltage is applied across the tips, and preferable extend downwardly from the cantilever substantially perpendicular thereto.

Abstract: A method and apparatus are provided for monitoring motion of a scanning probe microscope (SPM) actuator using an improved optical displacement sensor (ODS) including a light emitter, an intensifier, and a photodetector. One of these three devices, most preferably the intensifier, is preferably movable with the actuator and relative to the other two devices. The intensifier intensifies the light incident on the detecting face of the photodetector, increasing the sensitivity of the ODS and improving the ability of the SPM to translate the actuator in the desired manner. The photodetector preferably is a split diode or a quad diode photodetector. The light emitter includes at least a light source such as an LED and may additionally include an aperture that limits the light passing therethrough to that which contributes to the displacement signal, thereby reducing shot noise and increasing the signal-to-noise ratio.

Abstract: A system and method for calibrating a pyrometer used in temperature detection in a chemical vapor deposition system is provided. A calibration wafer with a reference region including a metal such as Al or Ag for forming a eutectic, and an exposed non-reference region without such a metal, are provided. Reflectivity measurements are taken from the reference region, and temperature measurements are taken from the non-reference region, over a range of temperatures including a known melting point for the metal eutectic. The pyrometer is calibrated based on the correlation of the known eutectic melting point with the change in reflectivity data obtained in the reference region, in light of the temperature data obtained from the non-reference region.

Abstract: A cantilever probe-based instrument is controlled to reduce the lateral loads imposed on the probe as a result of probe/sample interaction. In a preferred embodiment, the probe tip and/or sample are driven to move laterally relative to one another as a function of cantilever deflection in order to compensate for lateral tip motion that would otherwise be caused by cantilever deflection. In the case of a probe having a passive cantilever, the sample and/or the probe as a whole are driven to move laterally to obtain the desired magnitude of compensation as direct function of cantilever deflection. In the case of a probe having an active cantilever, the sample or probe may be moved as a function of cantilever drive signal, or the cantilever may be controlled to bend as a function of cantilever drive signal so that the tip moves to obtain the desired magnitude of compensation.

Abstract: An interferometric profiler is used to measure object motion by modifying the motion of the scanner so that the phase variation at each scanning step is kept within the acceptable limits of the algorithm used to calculate phase changes. The scanner motion is so manipulated on the basis of prior knowledge about the nature of the object motion, or knowledge obtained by pre-calibration, or by real-time feedback based on current measurements. The object motion is recovered from the scanning information by subtracting the scanner position from the object position as it evolves during the scan.

Abstract: A system and method for calibrating a pyrometer used in temperature detection in a chemical vapor deposition system is provided. A calibration wafer with a reference region including a metal such as Al or Ag for forming a eutectic, and an exposed non-reference region without such a metal, are provided. Reflectivity measurements are taken from the reference region, and temperature measurements are taken from the non-reference region, over a range of temperatures including a known melting point for the metal eutectic. The pyrometer is calibrated based on the correlation of the known eutectic melting point with the change in reflectivity data obtained in the reference region, in light of the temperature data obtained from the non-reference region.

Abstract: A shutter assembly for a reactor includes a cylindrical shutter for selectively closing a passthrough opening of the reactor, the shutter forming a closed loop and including an internal cavity adapted to receive a cooling fluid, tubing connected with the cylindrical shutter for supplying the cooling fluid to the internal cavity, and an actuator connected with the tubing for moving the tubing and the cylindrical shutter. The cylindrical shutter is movable between a first substantially closed position and a second substantially open position.

Abstract: A method of operating a probe based instrument includes a light source that generates and directs a beam of light towards a probe of the instrument to detect a property of probe deflection. The method automatically adjusts the position of the light beam on the probe based on movement of the probe by a Z actuator so as to eliminate apparent parasitic deflection of the probe. A light source assembly for detecting deflection of a probe preferably includes a base, a tip/tilt stage mounted on the base and a light source supported by the tip/tilt stage. The tip/tilt stage includes at least one electrically actuated fine adjustment actuator that controls the tip/tilt stage, preferably independently of movement of the AFM scanner used to move the probe.

Abstract: The present invention relates to a sputter deposition system and to methods of use thereof for processing substrates using planetary sputter deposition methods. The sputter deposition system includes a deposition chamber having an azimuthal axis. A rotatable member is situated in the chamber and includes a plurality of magnetrons provided thereon. Each magnetron includes a corresponding one of a plurality of sputtering targets. The rotatable member is configured to position each of the magnetrons to direct sputtered material from the corresponding one of the sputtering targets to a deposition zone defined in the deposition chamber. A transport mechanism is situated in the deposition chamber and includes an arm rotatable about the azimuthal axis. A substrate holder is attached to the arm of the transport mechanism and supports the substrate as the arm rotates the substrate holder to intersect the deposition zone for depositing sputtered material on the substrate.

Abstract: A system and method for evenly heating a substrate placed in a wafer carrier used in wafer treatment systems such as chemical vapor deposition reactors, wherein a first pattern of wafer compartments is provided on the top of the wafer carrier, such as one or more rings of wafer carriers, and a second pattern of inlaid material dissimilar to the wafer carrier material is inlaid on the bottom of the wafer carrier, and the second pattern of inlaid material is substantially the opposite of the first pattern of wafer compartments, such that there are at least as many material interfaces in intermediate regions without wafer compartments as there are in wafer carrying regions with wafers and wafer compartments.

Abstract: A wafer carrier for growing wafers includes a plate having a first surface and a second surface, a plurality of openings extending from the first surface to the second surface of the plate, and a porous element disposed in each of the plurality of openings, each porous element being adapted to support one or more wafers. The wafer carrier also has a blind central opening extending from the second surface toward the first surface of the plate, and a plurality of shafts extending outwardly from the blind central opening. Each shaft has a first end in communication with the blind central opening and a second end in communication with one of the porous elements for providing fluid communication between the blind central opening and one of the porous elements. Suction is formed at a surface of each porous element by drawing vacuum through the blind central opening and the shafts.

Abstract: Thin-film thickness and refractive index are measured using the Fourier amplitude of a broadband interferometric spectrum. Due to the smooth nature of the Fourier amplitude as a function of wavelength, as compared to the fast varying Fourier phase conventionally used to measure thickness, increased stability and repeatability of measurement are achieved. As a result, measurements of ultra-thin films with thickness below 100 nm are possible with reliable results.

Abstract: One or more thermal transfer sheets are easily removable and replaceable in an ion source. The ion source has a removable anode assembly, including the thermal transfer sheets, that is separable and from a base assembly to allow for ease of servicing consumable components of the anode assembly. The thermal transfer sheets may be interposed between the consumable components within the anode assembly. The thermal transfer sheets may be thermally conductive and either electrically insulating or conductive.