Abstract: Element for homogenizing the illumination with simultaneous setting of the polarization degree, wherein the element consists of at least two components. The first component is a microlens array, and the second component is a filter for setting the desired polarization.
Abstract: An interferometric device for position measurement of an element moveable in a plane is disclosed. A laser light source measures the position of the moveable element and emits the required measuring light. A beam splitter splits the measuring light into a first partial beam path and a second partial beam path, which each impinge on a reflecting surface of the moveable element via an interferometer. Herein, at least the beam splitter, which splits the measuring light into a first partial beam path and a second partial beam path, and the beam splitter, which directs the third partial beam path onto an etalon via an interferometer, have a respective beam trap associated with them, which traps the light returning from the respective interferometers.
Type:
Grant
Filed:
July 7, 2009
Date of Patent:
January 8, 2013
Assignee:
Vistec Semiconductor Systems GmbH
Inventors:
Hans-Artur Boesser, Siegfried Peter Kluge, Joerg Lenz, Gerhard Joseph Nickel
Abstract: A method for processing the image data of the surface of a wafer (2) recorded by at least one camera (5) is disclosed, wherein an image field (15) is defined for each camera (5) in such a way that the recorded image content is repeated after N recorded images. In an evaluation electronics (18) M utility programs (19) are determined, wherein M is equal to the number of recorded images after which the image content is repeated. The number M of utility programs (19) is adapted to the number N of images. Each of the M utility programs (19) of the plurality of recorded images is only fed with images having the same image contents in order to detect defects on the basis of the image contents of the images of the surface of the wafer. The results of the M utility programs (19) are respectively forwarded to a central program (20) in a sequential manner, which compiles a distribution of the defects present on the surface of the wafer (2) from the individual results of the M utility programs (19).
Abstract: A method for determining the positions of structures (3) on a mask (2) is disclosed. The method is implemented in a metrology tool (1) comprising a measurement table (20) which is movable in X-coordinate direction and Y-coordinate direction. A first intensity profile (IX) is recorded along a first measurement direction (MRX), which is parallel to the X-coordinate direction. A second intensity profile (IY) is recorded along a second measurement direction (MRY), which is parallel to the Y-coordinate direction. A two-dimensional position of a centre of gravity (S) with respect to the coordinate system of the metrology tool (1) is determined from the first intensity profile (IX) and the second intensity profile (IY).
Type:
Grant
Filed:
January 19, 2010
Date of Patent:
August 21, 2012
Assignee:
Vistec Semiconductor Systems GmbH
Inventors:
Klaus Rinn, Andreas Schaaf, Andre Schepp
Abstract: The present invention relates to a method for optically inspecting and visualizing optical measuring values from at least one image of a disk-like object, including the steps of recording said at least one image of said at least one disk-like object, wherein a plurality of optical measuring values are produced from said at least one recorded image; generating a resulting image, wherein an area of the surface of said disk-like object having optical measuring values within a predetermined interval, is associated with a color or brightness value selected from a predetermined range; and varying at least one imaging parameter as a function of the detected and evaluated optical measuring values and/or as a function of a visual inspection of the resulting image by an operator.
Abstract: The invention relates to a method for inspecting a surface of a wafer with regions of different detection sensitivity. For this purpose, an image of the selected surface of the wafer is acquired using a detector. At least one region handled with a different detection sensitivity than the rest of the wafer may be defined on the surface of the wafer by means of an input unit. The detection sensitivity set for the regions is a percentage less than the detection sensitivity for the surface of the wafer without the regions with the different detection sensitivity.
Abstract: Previously used examination devices and methods mostly operate with reflected visible or UV light to analyze microstructured samples of a wafer (38), for example. The aim of the invention is to increase the possible uses of said devices, i.e. particularly in order to represent structural details, e.g. of wafers that are structured on both sides, which are not visible in VIS or UV because coatings or intermediate materials are not transparent. Said aim is achieved by using IR light as reflected light while creating transillumination (52) which significantly improves contrast in the IR image, among other things, thus allowing the sample to be simultaneously represented in reflected or transmitted IR light and in reflected visible light.
Abstract: A method for determining the lateral correction as a function of the substrate topology and/or the geometry of the substrate holder is disclosed. The substrate is placed on a measuring stage traversable in the X coordinate direction and Y coordinate direction, which carries the substrate to be measured. The substrate is supported on at least three support points which define a plane. An apparatus is provided for determining the position of a plurality of positions on the surface of the substrate in the in the X, Y and Z coordinate directions. The substrate is tiltable about an axis parallel to the X/Y plane, to enable the substrate to be measured in a tilted position.
Abstract: A coordinate measuring machine is disclosed having an orientor automatically orienting a substrate associated therewith. A control and computing unit is further associated with the coordinate measuring machine, so that self-calibration may be performed on the basis of at least two different and automatically set orientations of the substrate.
Type:
Grant
Filed:
June 25, 2008
Date of Patent:
February 14, 2012
Assignee:
Vistec Semiconductor Systems GmbH
Inventors:
Wolfgang Fricke, Klaus Rinn, Slawomir Czerkas
Abstract: An apparatus (1) for measuring structures (3) on a mask (2) and for calculating structures in a photoresist on a wafer resulting from the structures (3) on the mask (2) is disclosed, wherein the apparatus (1) comprises at least one incident-light illumination means (14) and/or one transmitted-light illumination means (6), wherein the apparatus (1) comprises at least one imaging optics (9) and a detector (11) of a camera (10) for imaging the structures (3) on the mask (2), wherein a first computer program (17) is associated with the detector (11) of the camera (10) and provided for determining the position and/or the dimension of the structure (3) on the mask (2). A method for measuring structures (3) on a mask (2) and for calculating structures in a photoresist on a wafer to be expected from the structures (3) on the mask (2) is also disclosed.
Abstract: A method for optical inspection, detection and visualization of defects (9) on wafers (2) is disclosed, wherein at least one camera (5) acquires images of at least one portion (11) of the wafer (2) relative to a reference point (12) of the wafer (2), and the Cartesian coordinates of the image data associated with the at least one portion (11) of the wafer (2) are transformed into polar coordinates.
Abstract: An illumination mean for the inspection of flat substrates is disclosed. The flat substrate includes an upper edge area, a lower edge area and a front area. The illumination means is formed as an annular segment and comprises an opening into which at least the edge area of the flat substrate extends. A plurality of light sources are arranged on an annular segment in a housing. Inside the housing, a reflective element is provided so that the light from the light sources does not impinge perpendicularly on the upper edge area, the lower edge area and the front area of the flat substrate.
Type:
Grant
Filed:
September 29, 2008
Date of Patent:
January 3, 2012
Assignee:
Vistec Semiconductor Systems GmbH
Inventors:
Kurt Hahn, Michael Hofmann, Christof Krampe-Zadler
Abstract: A device for evaluating defects in the edge area of a wafer (6) is disclosed. The evaluation may also be performed automatically. In particular, the device includes three cameras (25, 26, 27), each provided with an objective (30), wherein a first camera (25) is arranged such that the first camera (25) is opposite to an edge area on the upper surface (6a) of the wafer (6), wherein a second camera (26) is arranged such that the second camera (26) is opposite to a front surface (6b) of the wafer (6), and wherein a third camera (27) is arranged such that the third camera (27) is opposite to an edge area on the lower surface (6c) of the wafer (6).
Type:
Grant
Filed:
February 28, 2008
Date of Patent:
January 3, 2012
Assignee:
Vistec Semiconductor Systems GmbH
Inventors:
Andreas Birkner, Michael Hofmann, Wolfgang Vollrath
Abstract: An advancing means for a multi-coordinate measurement table including a drive unit having a friction rod and a motor for each coordinate axis (x, y). The motor contacts one side of the friction rod with its motor shaft and at least one press roller contacts the other side of the friction rod. At least one pressing means is provided biasing the press roller, the friction rod and the motor shaft against each other with a pressing force, whereby the motor shaft frictionally engages the friction rod and converts the rotational movement of the motor into a linear movement of the friction rod. A method for controlling such an advancing means is disclosed as well.
Abstract: A method for determining the centrality of masks is disclosed. The mask is positioned in a coordinate measuring device on a measurement table displaceable in a direction perpendicular to the optical axis of an imaging measurement system in an interferometrically measurable way. The position of a mask coordinate system with respect to the measuring device coordinate system is determined based on at lest two structures on the mask. The relative distance from one of the at least first and second outer edges to the at least two structures is determined. The coordinate measuring machine determines the actual coordinates of the at least two structures with respect to the respective outer edges, which must not exceed a predetermined deviation from a desired value.
Abstract: A measuring system is disclosed with enhanced resolution for periodic structures on a substrate for semiconductor manufacture. Aperture structures of varying geometries are provided in the illumination beam path. The aperture structures differ regarding the transmission characteristics of light, and which adjust the intensity distribution of the diffraction orders in the imaging pupil of the optical system.
Abstract: A system and a method for determining positions of structures on a substrate are disclosed. The system includes at least one measurement table (20) movable in the X-coordinate direction and in the Y-coordinate direction, a measurement objective (9) and a camera for determining the positions of the structures (3) on the substrate (2). The position of the measurement objective (9) and/or the measurement table (20) may be determined by at least one interferometer (24). The system is surrounded by a housing representing a climatic chamber (50) provided with an active pressure regulation.
Type:
Grant
Filed:
July 31, 2008
Date of Patent:
July 12, 2011
Assignee:
Vistec Semiconductor Systems GmbH
Inventors:
Hans-Artur Boesser, Wolfgang Fricke, Michael Heiden
Abstract: A method for determining the position of an edge bead removal line of a disk-like object having an edge area and an alignment mark on the edge area is disclosed, wherein the edge area including the edge bead removal line is imaged on a line-by-line basis, an intensity profile I of the imaged edge area including the edge bead removal line is obtained with a camera on a line-by-line basis, and the edge area and the alignment mark are detected, wherein the local intensity maxima I?max of the intensity profile I are plotted as points in a diagram, segment sets are formed in the diagram, the segment sets are fitted in ellipses, and a quality criterion qges is determined for each ellipse.
Abstract: A coordinate measuring machine (1) for measuring structures (3) on a substrate (2) including a measurement table (20) movable in the X-coordinate direction and in the Y-coordinate direction, a measurement objective (9), at least one laser interferometer (24) for determining the position of the measurement table (20) and the measurement objective (9) wherein the measurement table (20), the measurement objective (9) and the at least one laser interferometer (24) are arranged in a vacuum chamber (50).
Type:
Grant
Filed:
July 29, 2008
Date of Patent:
June 14, 2011
Assignee:
Vistec Semiconductor Systems GmbH
Inventors:
Hans-Artur Boesser, Michael Heiden, Klaus-Dieter Adam
Abstract: A system for determining positions of structures on a substrate is disclosed. The system includes a plurality of stations enclosed by a housing. At least one of the stations inside the housing is designed to be movable. The housing is provided with a filter fan unit generating an air flow in the housing. Air-directing elements are provided in the housing so that an invariable flow may be achieved irrespective of the at least one movable station.
Type:
Grant
Filed:
October 27, 2008
Date of Patent:
May 24, 2011
Assignee:
Vistec Semiconductor Systems GmbH
Inventors:
Katrin Pietsch, Klaus-Dieter Adam, Tillmann Ehrenberg