Abstract: A multi-slope load/unload ramp for a hard disk drive includes an inner first portion having a non-horizontal first slope and an adjacent outer second portion having a different non-horizontal second slope. The first slope may be steeper than the second slope, and the ramp may further include a third portion adjacent to the second portion and also having a third slope steeper than the second slope, with the ramp configured for positioning the first and second portions to overlap the disk while the third segment may be in part outside the disk. The second slope may be steeper than the first slope, with the ramp configured for positioning the first portion to overlap the disk while the second portion may be in part outside of the disk. Hence, any slider rebound from the steeper portions would occur outside of the disk and avoid a slider-disk crash.

Abstract: Embodiments of the present disclosure generally relate to a target device handling overlap write commands. In one embodiment, a target device includes a non-volatile memory and a controller coupled to the non-volatile memory. The controller includes a random accumulated buffer, a sequential accumulated buffer, and an overlap accumulated buffer. The controller is configured to receive a new write command, classify the new write command, and write data associated with the new write command to one of the random accumulated buffer, the sequential accumulated buffer, or the overlap accumulated buffer. Once the overlap accumulated buffer becomes available, the controller first flushes to the non-volatile memory the data in the random accumulated buffer and the sequential accumulated buffer that was received prior in sequence to the data in the overlap accumulated buffer. The controller then flushes the available overlap accumulated buffer, ensuring that new write commands override prior write commands.

Abstract: Aspects of the present disclosure generally relate to a magnetic recording head assembly that includes an external alternating current (AC) source. A magnetic recording head of the magnetic recording head assembly includes a conductive structure between a main pole and a trailing shield. The conductive structure includes a conductive layer, and the conductive layer is nonmagnetic. The magnetic recording head assembly also includes an external AC source to supply AC current that flows through the conductive structure. In one aspect, the conductive structure is between a coil structure and the trailing shield, and the external AC source is coupled to the coil structure. The conductive structure and the external AC source facilitate consistently providing an enhanced AC writing field to facilitate effective and reliable writing, high ADC, high SNR, and reduced jitter.

Abstract: A magnetoelectric memory device includes a magnetic tunnel junction located between a first electrode and a second electrode. The magnetic tunnel junction includes a reference layer, a nonmagnetic tunnel barrier layer, a free layer, and a dielectric capping layer. At least one layer that provides voltage-controlled magnetic anisotropy is provided within the magnetic tunnel junction, which may include a pair of nonmagnetic metal dust layers located on, or within, the free layer, or a two-dimensional metal compound layer including a compound of a nonmagnetic metallic element and a nonmetallic element.

Abstract: A data storage device comprising a non-volatile storage medium configured to store user data, a data port configured to receive and transmit data between a host computer system and the data storage device, and a controller. The controller is configured to receive, via the data port, a write command comprising a read restriction indication, receive, via the data port, data and write the data to an address of the non-volatile storage medium. The controller is further configured to determine an occurrence of a read restriction event, and in response to the occurrence of the read restriction event and in response to the read restriction indication, erase the data from the address of the non-volatile storage medium.

Abstract: Disclosed herein are embodiments of single-molecule array sequencing (SMAS) devices and systems. Each sensor of an array of sensors of the SMAS device is capable of detecting labels attached to nucleotides incorporated into a single nucleic acid strand bound to a respective binding site. Each sensor can detect a single label (e.g., fluorescent, magnetic, organometallic, charged molecule, etc.) attached to the incorporated nucleotide. Also disclosed are methods of using SMAS devices and systems for highly-scalable nucleic acid (e.g., DNA) sequencing based on sequencing by synthesis (SBS) of multiple instances of clonally amplified DNA immobilized on such SMAS devices. Also disclosed are error correction methods that mitigate errors (e.g., errant label detections or non-detections) made in sequencing individual nucleic acid strands.

Abstract: A data storage device comprising a non-volatile storage medium configured to store data, a data port configured to receive and transmit data between a host computer system and the data storage device, and a controller. The controller is configured to receive, via the data port, a notification activation, and receive, via the data port, a command data structure comprising a command for the data storage device to perform an operation. The controller is further configured to in response to receiving the command data structure, perform the operation, the operation being defined by an in-progress state and a completed state, and in response to determining that the operation is in the completed state and in response to determining the notification activation, transmit, via the data port, a response data structure comprising an indication that the operation is in the completed state.

Abstract: The present disclosure generally relates to spin-orbit torque (SOT) device comprising a first bismuth antimony (BiSb) layer having a (001) orientation. The SOT device comprises a first BiSb layer having a (001) orientation and a second BiSb layer having a (012) orientation. The first BiSb layer having a (001) orientation is formed by depositing an amorphous material selected from the group consisting of: B, Al, Si, SiN, Mg, Ti, Sc, V, Cr, Mn, Y, Zr, Nb, AlN, C, Ge, and combinations thereof, on a substrate, exposing the amorphous material to form an amorphous oxide surface on the amorphous material, and depositing the first BiSb layer on the amorphous oxide surface. By utilizing a first BiSb layer having a (001) orientation and a second BiSb having a (012) orientation, the signal through the SOT device is balanced and optimized to match through both the first and second BiSb layers.

Abstract: The present disclosure generally relates to spin-orbit torque (SOT) devices comprising a bismuth antimony (BiSb) layer. The SOT devices further comprise one or more GexNiFe layers, where at least one GexNiFe layer is disposed in contact with the BiSb layer. The GexNiFe layer has a thickness less than or equal to about 15 ? when used as an interlayer on top of the BiSb layer or less than or equal to 40 ? when used as a buffer layer underneath the BiSb. When the BiSb layer is doped with a dopant comprising a gas, a metal, a non-metal, or a ceramic material, the GexNiFe layer promotes the BiSb layer to have a (012) orientation. When the BiSb layer is undoped, the GexNiFe layer promotes the BiSb layer to have a (001) orientation. Utilizing the GexNiFe layer allows the crystal orientation of the BiSb layer to be selected.

Abstract: Aspects of the present disclosure generally relate to magnetic recording heads (such as write heads of data storage devices) that include multilayer structures to facilitate targeted switching and relatively low coercivity. In one or more embodiments, a magnetic recording head includes an iron-cobalt (FeCo) layer having a crystalline structure that is a cubic lattice structure, a first crystalline layer formed of a first material, and a second crystalline layer between the first crystalline layer and the FeCo layer. The second crystalline layer is formed of a second material different from the first material, and the second crystalline layer interfaces both the FeCo layer and the first crystalline layer. The crystalline structure of the FeCo layer has a texture of <100>.

Abstract: A data storage device and method for adaptive host memory buffer allocation based on virtual function prioritization are provided. In one embodiment, a data storage device is provided comprising a memory, an interface, and a controller. The controller is configured to receive priority information of each of a plurality of virtual functions in the host and allocate space in the host memory buffer for each of the plurality of virtual functions based on the priority information. The controller is further configured to dynamically reallocate the space. Other embodiments are possible, and each of the embodiments can be used alone or together in combination.

Abstract: Certain aspects of the present disclosure provide techniques for partitioning feature maps to improve machine learning model processing. In one aspect, a method, includes partitioning a feature map row-wise into a plurality of feature sub-maps such that: each respective feature sub-map of the plurality of feature sub-maps is defined with respect to a split row determined based on a dense data element count for each row of the feature map; and each feature sub-map of the plurality of feature sub-maps has a same column dimensionality as the feature map; and assigning each of the plurality of feature sub-maps to one of a plurality of tensor compute units and one of a plurality of tensor feature map memory units for processing in parallel.

Abstract: A data storage device comprising a non-volatile storage medium configured to store user data, a data port configured to transmit data between a host computer system and the data storage device, a display system, and a controller. The controller is configured to receive and execute one or more commands from the host computer system to cause a data transfer between the host computer system and the storage medium of the data storage device. The controller generates performance data representing the performance of the data storage device, wherein the performance data includes an efficiency ratio value representing a relative utilization of an operational capability of the data storage device in conducting the data transfer. The controller generates one or more control signals to cause the display system to visually indicate at least the efficiency ratio value of the performance data.

Abstract: In some situations, a leak on a wordline may be a localized problem that causes data loss in a block that contains the wordline. In other situations, such as when the leak occurs near a peripheral wordline routing area, the leak can affect the entire memory die. The storage system provided herein has a fatal wordline leak detector that determines the type of leak and, accordingly, whether just the block should be retired or whether related blocks should be retired.

Abstract: A mobile data storage device (DSD) incorporating a mobile data storage device (DSD), the mobile DSD comprising a non-volatile storage medium configured to store user data, a data path configured to transmit at least data between the mobile DSD and a host computer system, a housing having a machine readable optical code and a controller. The controller is configured to receive, from the data path, a request to restore the mobile DSD to factory settings. The controller also receives, from the data path, a unique access passcode derived from the machine readable optical code. The controller validates the unique access passcode, and, in response to determining that the unique access passcode is valid, restores the mobile DSD to factory settings.

Abstract: Low-density parity-check (LDPC) coding based on memory cell voltage distribution (CVD) in data storage devices. In one embodiment, a memory controller includes a memory interface configured to interface with a non-volatile memory; and a controller. The controller is configured to receive a plurality of data pages to be stored in the non-volatile memory, and transform the plurality of data pages into a plurality of transformed data pages. The controller is further configured to determine a plurality of parity bits based on the plurality of transformed data pages, and store the plurality of data pages and the plurality of parity bits in the non-volatile memory.

Abstract: A data storage device includes one or more memory device and a controller that is DRAM-less coupled to the one or more memory devices. The controller is configured to receive a command from a host device, begin execution of the command, and receive an abort request command for the command. The command includes pointers that direct the data storage device to various locations on the data storage device where relevant content is located. Once the abort command is received, the content of the host pointers stored in the data storage device RAM are changed to point to the HMB. The data storage device then waits until any already started transactions over the interface bus that are associated with the command have been completed. Thereafter, a failure completion command is posted to the host device.

Abstract: The present disclosure generally relates to data storage devices, and more specifically, to a magnetic media drive employing a magnetic recording head. The head includes a main pole, a trailing shield, and a MAMR stack including at least one magnetic layer. The magnetic layer has a surface facing the main pole, and the surface has a first side at a media facing surface (MFS) and a second side opposite the first side. The length of the second side is substantially less than the length of the first side. By reducing the length of the second side, the area to be switched at a location recessed from the MFS is reduced as a current flowing from the main pole to the trailing shield or from the trailing shield to the main pole. With the reduced area of the magnetic layer, the overall switch time of the magnetic layer is decreased.

Abstract: The present disclosure generally relates to a magnetic recording device having a magnetic recording head comprising a spintronic device. The spintronic device is disposed between a main pole and a trailing shield at a media facing surface. The spintronic device comprises a spin torque layer (STL) and a multilayer seed layer disposed in contact with the STL. The spintronic device may further comprise a field generation layer disposed between the trailing shield and the STL. The multilayer seed layer comprises an optional high etch rate layer, a heat dissipation layer comprising Ru disposed in contact with the optional high etch rate layer, and a cooling layer comprising Cr disposed in contact with the heat dissipation layer and the main pole. The high etch rate layer comprises Cu and has a high etch rate to improve the shape of the spintronic device during the manufacturing process.

Abstract: A data storage disk cartridge library includes a media drive having a clean internal environment, a disk cartridge bay positioned adjacent to the media drive, and a disk cartridge positioned in the disk cartridge bay and having clean compartments for housing a clean disk trays supporting clean magnetic recording disk media. The media drive has a disk tray extractor including a seal plate positioned at times flush with a surrounding shroud, and a set of pins for extending through the seal plate and a disk tray and for moving to a tray locking position. The seal plate covers a disk tray faceplate to physically isolate the faceplate from the clean portion of the disk tray, the corresponding clean compartment, and the clean environment of the media drive. The shroud is configured to cover surfaces of the disk cartridge adjacent to the faceplate.