Abstract: An adapter cable can include a receptacle connector including contact pins as defined for a peripheral component interconnect express (PCIe) connector; edge connectors having edge pins as defined for a PCIe add-in card (AIC); and connections connecting the receptacle connector to the edge connectors, each connection connecting one of the contact pins to one of the edge pins.

Abstract: An operating method for a memory, a memory, and a memory system are provided in the present application. The memory includes at least a plurality of word lines and a plurality of strings, and the plurality of word lines include a target word line, and each word line is coupled to a plurality of strings. Each string includes a plurality of memory cells. In accordance with the operating method provided by the present application, the first verification and the second verification are performed on a plurality of target memory cells with first and second verify voltages during performing a first programming operation on a plurality of target memory cells in target string coupled to the target word line, and the second start program voltage is determined based on at least the second verification result, ensuring the accuracy of the second start program voltage.

Abstract: A method of operating a memory system can include maintaining one or more last write page table, the one or more last write page table is periodically updated to include at least one page serial number of the last page being written in a flash media, determining a last checkpoint in the flash media, the checkpoint is periodically updated and saved, determining the at least one page serial number in the one or more last write page table, validating a page having a highest page serial number in the one or more last write page table, validating pages having page serial numbers after the validated page having a page serial number in the one or more last write page table until an uncorrectable error correction code (UECC) occurs, and rebuilding mapping tables according to pages from the last checkpoint up to the last validated page before the UECC occurs.

Abstract: The present disclosure provides a method for forming a three-dimensional (3D) memory device. The method includes disposing an alternating dielectric stack over a substrate, wherein the alternating dielectric stack includes first dielectric layers and second dielectric layers alternatingly stacked on the substrate. The method also includes forming a channel structure penetrating through the alternating dielectric stack and extending into the substrate, wherein the channel structure includes a channel layer disposed on a sidewall of a memory film. The method further includes removing the substrate and a portion of the memory film that extends into the substrate to expose a portion of the channel layer; and disposing an array common source (ACS) on the exposed portion of the channel layer.

Abstract: The present disclosure describes a three-dimensional (3D) memory device includes first and second memory arrays disposed on a semiconductor layer. The 3D memory device can also include a staircase structure disposed between the first and second memory arrays. The staircase structure includes first and second staircase regions. The first staircase region includes a first staircase structure that contains a first plurality of stairs descending in a first direction. The second staircase region includes a second staircase structure that contains a second plurality of stairs descending in a second direction. The 3D memory device can also include a contact region disposed between the first and second staircase regions. The contact region includes a plurality of contacts the extending through an insulating layer and into the semiconductor layer.

Abstract: A method of programming a memory device. The memory device includes a plurality of memory strings, each memory string including a top transistor controlled by a top select gate (TSG) and connected to a bit line (BL), a bottom transistor controlled by a bottom select gate (BSG), and memory cells between the top and bottom transistors, each memory cell connected to a word line (WL). The method includes applying program pulses to a memory cell of the memory device in a program phase, verifying a voltage value of the memory cell in a verify phase, receiving a suspend command and performing a suspend operation, applying a discharge pulse to the memory cell in a discharge phase to thereby discharge the memory cell, wherein the discharge pulse includes a voltage pulse to an unselected top select gate (TSGunsel), and suspending programming or verifying of the memory cell in a suspend phase.

Abstract: A method for operating a memory system relates to the memory field and aims to address problems such as the over-long waiting time caused by moving data during the buffer flush process. The method for operating the memory system includes: in response to a first space flush command, configuring a part of the free space as the available space of the first space in the case where the size of the free space of the memory device is greater than or equal to the first threshold.

Abstract: Implementations of the present disclosure disclose a memory controller and a control method thereof, a memory apparatus and a control method thereof, and a memory system and a control method thereof.

Abstract: Aspects of the disclosure provide the memory system having a memory apparatus and a memory controller coupled with the memory apparatus. The memory apparatus includes at least one memory chip having a plurality of memory planes, each memory plane includes a plurality of pages, a plurality of pages located at the same position in each of the memory planes of the at least one memory chip form a page line, the memory apparatus includes a plurality of tag groups, each tag group includes a plurality of page lines. The memory controller can be configured to, when the memory apparatus is powered down and then powered on, respectively perform, in sequence, a recoding operation on all pages of which the states are programmed states in each tag group, and according to an encoding result corresponding to each tag group, respectively determine whether check data corresponding to each tag group is abnormal.

Abstract: A method includes disposing a layer stack on a substrate, the layer stack including a number of levels. A first control gate structure is formed in a first level of the number of levels by: forming a first opening through a dielectric layer of the first level and a sacrificial layer of the first level; removing a remaining portion of the sacrificial layer of the first level to form a first cavity; and disposing a first conductive layer in the first cavity. A second control gate structure is formed in a second level below the first level by: extending the first opening into a dielectric layer of the second level and a sacrificial layer of the second level to form a second opening; removing a remaining portion of the sacrificial layer of the second level to form a second cavity; and disposing a second conductive layer in the second cavity.

Abstract: A method for conducting a read-verification operation on a target memory cell in a three-dimensional (3D) memory device includes removing fast charges of the target memory cell at a read-prepare step and measuring a threshold voltage of the target memory cell at a sensing step. Removing the fast charges of the target memory cell includes applying a prepare voltage (Vprepare) on an unselected top select gate (Unsel_TSG) of an unselected memory string, applying a first off voltage (Voff) on a selected word line (Sel_WL) associated with the target memory cell, and applying a pass voltage (Vpass) on an unselected word line (Unsel_WL).

Abstract: Embodiments of three-dimensional memory devices and fabricating methods thereof are disclosed. One disclosed method for forming a memory structure comprises: forming a bottom conductive layer on a substrate; forming a dielectric stack on the bottom conductive layer, the dielectric stack comprising a plurality of alternatively arranged first dielectric layers and second dielectric layers; forming an opening penetrating the dielectric stack and exposing the bottom conductive layer; forming a cap layer on a bottom of the opening; forming a cylindrical body and a top contact on the cap layer and in the opening; and replacing the plurality of second dielectric layers with conductive layers.

Abstract: The present disclosure provides a method for forming a three-dimensional (3D) memory device. The method includes sequentially forming a first and a second dielectric stacks on a substrate. The first dielectric stack includes a first and a second dielectric layers alternatingly stacked in a first direction perpendicular to the substrate. The second dielectric stack comprises a third and a fourth dielectric layers stacked in the first direction. The method further includes forming an etch-stop layer on the second dielectric stack and forming a gate line slit (GLS) trench spacer to cover a sidewall of the etch-stop layer. The method further includes replacing the fourth and the second dielectric layers with conductive layers through a GLS opening to form a top select gate (TSG) film stack and a film stack of alternating conductive and dielectric layers, respectively.

Abstract: A three-dimensional (3D) memory device includes a first memory cell, a second memory cell, a control gate between the first and second memory cells, a top contact coupled to the first memory cell, and a bottom contact coupled to the second memory cell. The first memory cell can include a first pillar, a first insulating layer surrounding the first pillar, a first gate contact coupled to a first word line, and a second gate contact coupled to a first plate line. The second memory cell can include a second pillar, a second insulating layer surrounding the second pillar, a third gate contact coupled to a second word line, and a fourth gate contact coupled to a second plate line. The 3D memory device can utilize dynamic flash memory (DFM), increase storage density, provide multi-cell storage, provide a three-state logic, decrease leakage current, increase retention time, and decrease refresh rates.

Abstract: A 3D-NAND memory device is provided. The memory device includes a substrate, a bottom select gate (BSG) disposed over the substrate, a plurality of word lines positioned over the BSG with a staircase configuration and a plurality of insulating layers disposed between the substrate, the BSG, and the plurality of word lines. In the disclosed memory device, one or more first dielectric trenches are formed in the BSG and extend in a length direction of the substrate to separate the BSG into a plurality of sub-BSGs. In addition, one or more common source regions are formed over the substrate and extend in the length direction of the substrate. The one or more common source regions further extend through the BSG, the plurality of word lines and the plurality of insulating layers.

Abstract: The present disclosure provides a three-dimensional NAND memory device, comprising a NAND string including a memory cell to be inhibited to program, a word line driver, and a controller configured to control the word line driver to perform a programming operation on the memory cell controlled by a selected word line of a plurality of word lines including a first unselected word line adjacent to the selected word line, a first plurality of unselected word lines adjacent to the first unselected word line, and a second plurality of unselected word lines adjacent to the first plurality of unselected word lines. The programming operation includes applying a programming voltage signal to the selected word line; applying a first pass voltage to the first plurality of unselected word lines; and applying a second pass voltage to the second plurality of unselected word lines, the first pass voltage is different from the second pass voltage.

Abstract: The present disclosure provides a memory device that includes a memory array and a page buffer. The memory array includes a plurality of memory cells coupled to a bit line of the memory array. The page buffer is coupled to the plurality of memory cells via the bit line to sense stored data in the memory cells. The page buffer includes first, second, and third transistors coupled to the bit line, first and second nodes, a capacitance structure coupled to the first node, and a latch circuit coupled to the bit line via the first transistor. First terminals of the first, second, and third transistors are coupled to the first node. A second terminal of the second transistor is coupled to the second node. The third transistor amplifies a read margin voltage at the second node. The page buffer shortens a time of a read operation or verify operation.

Abstract: Embodiments of a three-dimensional (3D) memory device and fabrication methods are disclosed. In some embodiments, the 3D memory device includes a peripheral circuitry formed on a first substrate. The peripheral circuitry includes a plurality of peripheral devices on a first side of the first substrate, a first interconnect layer, and a deep-trench-isolation on a second side of the first substrate, wherein the first and second sides are opposite sides of the first substrate and the deep-trench-isolation is configured to provide electrical isolation between at least two neighboring peripheral devices. The 3D memory device also includes a memory array formed on a second substrate. The memory array includes at least one memory cell and a second interconnect layer, wherein the second interconnect layer of the memory array is bonded with the first interconnect layer of the peripheral circuitry, and the peripheral devices are electrically connected with the memory cells.

Abstract: Aspects of the disclosure are directed to a memory system that can include a controller and a memory coupled thereto, each memory cell of the memory is configured to store m-bit information, and the controller includes at least one of an exclusive OR circuit, an inverter and an access circuit. The controller is configured to receive n groups of logic page data, and generate, at different values of m and n, at least one group of logic page data selectively by at least one of the exclusive OR circuit, the inverter and the access circuit. The controller is further configured to transmit the m groups of logic page data to the memory to generate 2n different data states in the memory.

Abstract: The disclosure provides a power supply circuit, a memory, a testing device, a memory system and an electronic device, relates to the memory technologies, and may reduce the testing time of the memory and the footprint occupation of the memory. The power supply circuit can include a voltage adjusting circuit and an oscillation circuit. A first voltage output terminal of the voltage adjusting circuit is coupled with a power supply input terminal of a delay chain circuit in the memory and coupled with a power supply input terminal of the oscillation circuit. The voltage adjusting circuit is configured to output a first voltage to the delay chain circuit and the oscillation circuit via the first voltage output terminal. The oscillation circuit is configured to generate a clock signal corresponding to the first voltage. The voltage adjusting circuit is also configured to receive an adjusting signal for adjust the first voltage.