Abstract: The present disclosure provides a fabrication method to produce a semiconductor structure with increased reliability for use in NAND memory devices. The method can include forming a layered semiconductor structure that includes a first layer, a second layer disposed on the first layer, and a third layer disposed on the second layer. The method can also include forming a channel structure, which can include etching the first layer, the second layer, and the third layer to form an opening through a surface of the semiconductor structure. A portion of the third layer can be exposed at the opening. The forming of the channel structure also include oxidizing the exposed portion of the third layer to form silicon oxide expand the exposed portion of the third layer.

Abstract: The present disclosure provides a memory system for selecting from among a plurality of read retry routines based on metadata. The memory system can include one or more memory devices and a memory controller. The memory controller can also detect a failure of a read operation. The memory controller can also analyze a set of values that correspond to a set of effectors of the read operation. The memory controller can select one or more read retry routines from a plurality of read retry routines based on the analyzing. Each of the plurality of read retry routines can associated with a different effector from the set of effectors and a read voltage that corresponds to the different effector. The memory controller can also perform the selected one or more read retry routines at the portion of the one or more memory devices to negate the failure of the read operation.

Abstract: In certain aspects, a memory device includes memory cells, and a peripheral circuit coupled to the memory cells. The peripheral circuit is configured to initiate a program operation on a selected memory cell of the memory cells, obtain a number of occurrences of one or more suspensions during the program operation, and determine a program pulse limit for the program operation based on the number of occurrences of the suspensions.

Abstract: Embodiments of contact structures of a three-dimensional memory device and fabrication method thereof are disclosed. The three-dimensional memory structure includes a film stack disposed on a substrate, wherein the film stack includes a plurality of conductive and dielectric layer pairs, each conductive and dielectric layer pair having a conductive layer and a first dielectric layer. The three-dimensional memory structure also includes a staircase structure formed in the film stack, wherein the staircase structure includes a plurality of steps, each staircase step having two or more conductive and dielectric layer pairs. The three-dimensional memory structure further includes a plurality of coaxial contact structures formed in a first insulating layer over the staircase structure, wherein each coaxial contact structure includes one or more conductive and insulating ring pairs and a conductive core, each conductive and insulating ring pair having a conductive ring and an insulating ring.

Abstract: Embodiments of three-dimensional memory device architectures and fabrication methods therefore are disclosed. In an example, the memory device includes a substrate having a first layer stack on it. The first layer stack includes alternating conductor and insulator layers. A second layer stack is disposed over the first layer stack where the second layer stack also includes alternating conductor and insulator layers. One or more vertical structures extend through the first layers stack. A conductive material is disposed on a top surface of the one or more vertical structures. One or more second vertical structures extend through the second layer stack and through a portion of the conductive material.

Abstract: Aspects of the disclosure provide a semiconductor device. The semiconductor device includes a memory stack of gate layers and insulating layers. The gate layers and the insulating layers are stacked alternatingly and are formed into stair steps in a staircase region. Further, the semiconductor device includes a landing stack formed on the stair steps in the staircase region. The landing stack includes an upper layer that is etch selective to a contact isolation layer that covers the staircase region. Then, the semiconductor device includes a first contact structure on a first stair step of the stair steps. The first contact structure extends through a first contact hole in the contact isolation layer and the landing stack. The first contact structure is connected with a first gate layer (e.g., a top gate layer) of the first stair step.

Abstract: Aspects of the disclosure provide a semiconductor device. The semiconductor device includes a memory stack of gate layers and insulating layers, a landing structure and a contact structure. The gate layers and the insulating layers are stacked alternatingly, and form stair steps in a staircase region. The landing structure is disposed on a first gate layer of a first stair step of the stair steps in the staircase region. The landing structure includes an upper structure and an isolation stack between the upper structure and the first gate layer. The upper structure is etch-selective to a contact isolation layer that covers the staircase region. The contact structure extends through the contact isolation layer and the landing structure and is connected with the first gate layer of the first stair step.

Abstract: A three-dimensional (3D) memory device includes a core array region and a staircase region adjacent to the core array region. The core array region includes a memory stack having a plurality of conductor layers and a plurality of dielectric layers stacked alternatingly, a first semiconductor layer disposed over the memory stack, and a channel structure extending through the memory stack and the first semiconductor layer. The staircase region includes a staircase structure, a supporting structure disposed over the staircase structure, and a plurality of contacts contacting the plurality of conductor layers in the staircase structure. The first semiconductor layer overlaps the core array region in a plan view of the 3D memory device and the supporting structure overlaps the staircase region in the plan view of the 3D memory device.

Abstract: A memory device comprising multiple memory planes is disclosed. The memory device further comprises a first pump set coupled with the multiple memory planes, and configured to supply a first output voltage to multiple linear regulators during a steady phase, and a second pump set coupled with the multiple memory planes, and configured to supply a second output voltage to the multiple linear regulators during a ramping phase. The multiple linear regulators can includes a first linear regulator set configured to regulate the first output voltage or the second output voltage to generate a first voltage bias for a first group of word lines of the plurality of memory planes, and a second linear regulator set configured to regulate the first output voltage or the second output voltage to generate a second voltage bias for a second group of word lines of the plurality of memory planes.

Abstract: Embodiments of 3D memory devices and methods for forming the same are disclosed. In an example, a 3D memory device includes a substrate, a memory stack, a channel structure, a channel local contact, a slit structure, and a staircase local contact. The memory stack includes interleaved conductive layers and dielectric layers above the substrate. The channel structure extends vertically through the memory stack. The channel local contact is above and in contact with the channel structure. The slit structure extends vertically through the memory stack. The staircase local contact is above and in contact with one of the conductive layers at a staircase structure on an edge of the memory stack. Upper ends of the channel local contact, the slit structure, and the staircase local contact are flush with one another.

Abstract: In a method for reading a memory device including a first memory cell string, in a pre-verify stage, a first verify voltage is applied on a gate terminal of a selected memory cell of the first memory cell string, where the selected memory cell is programmed and arranged between a first adjacent memory cell and a second adjacent memory cell. A first bias voltage is applied on a gate terminal of at least one memory cell of the first memory cell string that is not programmed. In a verify stage, a second verify voltage is applied on the gate terminal of the selected memory cell of the first memory cell string. A second bias voltage is applied on the gate terminal of the at least one memory cell of the first memory cell string that is not programmed, where the second bias voltage is smaller than the first bias voltage.

Abstract: Embodiments of semiconductor devices and methods for forming the semiconductor devices are disclosed. In an example, a method for forming device openings includes forming a material layer over a first region and a second region of a substrate, the first region being adjacent to the second region, forming a mask layer over the material layer, the mask layer covering the first region and the second region, and forming a patterning layer over the mask layer. The patterning layer covers the first region and the second region and including openings corresponding to the first region. The plurality of openings includes a first opening adjacent to a boundary between the first region and the second region and a second opening further away from the boundary. Along a plane parallel to a top surface of the substrate, a size of the first opening is greater than a size of the second opening.

Abstract: Systems, methods and media of optimization of temporary read errors (TRE) in three-dimensional (3D) NAND memory devices are disclosed. A disclosed memory device can comprises a plurality of memory cells arranged as an array of NAND memory strings, a plurality of word lines couple to the memory cells, and a controller. The controller is configured to determine whether a next read operation is a first read operation of the memory device after recovering from an idle state, and In response to a positive result of the determination, control the memory device to perform an extended pre-phase of the first read operation before a read-phase of the first read operation.

Abstract: A method of cache programming of a NAND flash memory in a triple-level-cell (TLC) mode is provided. The method includes discarding an upper page of a first programming data from a first set of data latches in a plurality of page buffers when a first group of logic states are programmed and verified. The plurality of page buffers include the first, second and third sets of data latches, configured to store the upper page, middle page and lower page of programming data, respectively. The method also includes uploading a lower page of second programming data to a set of cache latches, transferring the lower page of the second programming data from the set of cache latches to the third set of data latches after discarding the lower page of the first programming data, and uploading a middle page of the second programming data to the set of cache latches.

Abstract: Aspects of the disclosure provide a method of preparing a focused ion beam (FIB) sample and analyzing the sample in an electron microscope system. The method can include forming, over a substrate, a target film having a thickness of less than a threshold corresponding to a limit for FIB requirements, and forming a supporting film over the target film. The method can also include obtaining a FIB sample that includes a portion of the target film and a portion of the supporting film and. The method can further include analyzing the obtained portion of the target film in an electron microscope system.

Abstract: A data operation method of a memory system is provided. The method includes, based on an obtained logical to physical mapping table, determining whether address values of a plurality of target physical addresses in the logical to physical mapping table corresponding to a plurality of target logical addresses are continuous; if so, selecting one of the plurality of target physical addresses as a base physical address, and setting a base physical address offset based on address values of remaining target physical addresses; and storing the base physical address and the base physical address offset into a cache of a memory controller, as a mapping relationship of the plurality of target logical addresses corresponding to the plurality of target physical addresses.

Abstract: The present disclosure provides a content addressable memory (CAM) for repairing firmware of multi-plane read operations in a flash memory device. The CAM comprises a set of CAM registers configured to store a mapping table. The mapping table comprises a plurality of old addresses, each old address corresponding to a new address. The CAM also comprises N comparators coupling to the set of CAM registers, and configured to compare the old addresses with N input signals for performing the multi-plane read operations on N memory planes, wherein N is an integer greater than 1. The CAM further comprises N multiplexers coupling to the N comparators respectively and to the set of CAM registers, and configured to generate N output signals for the multi-plane read operations. At least one of the N output signals comprises the new address according to the mapping table and a comparison output by the comparators.

Abstract: In a method for fabricating a semiconductor device, an initial stack of sacrificial word line layers and insulating layers is formed over a substrate of the semiconductor device. The sacrificial word line layers and the insulating layers are disposed over the substrate alternately. A first staircase is formed in a first staircase region of a connection region of the initial stack. A second staircase is formed in a second staircase region of the connection region of the initial stack. The connection region of the initial stack includes a separation region between the first and second staircases, and the connection region is positioned between array regions of the initial stack at opposing sides of the initial stack.

Abstract: In a method for manufacturing a semiconductor device, a doped region is formed in a substrate from a first main surface. An insulating layer is formed over the doped region of the substrate. Contacts are formed in the insulating layer such that the contacts extend into the doped region. A portion of the substrate is removed from a second main surface. A trench, a first conductive line, and a second conductive line are formed from the doped region of the substrate through etching the substrate from the second main surface. The trench extends through the substrate to expose the insulating layer. The first and second conductive lines are spaced apart from each other by the trench. The contacts are positioned along and in contact with the first and second conductive lines. The trench is filled with a dielectric material.

Abstract: Aspects of the disclosure provide a method for fabricating semiconductor device. The method includes characterizing an etch process that is used to etch channel holes and dummy channel holes in a stack of alternating sacrificial gate layers and insulating layers upon a substrate of a semiconductor device. The channel holes are in a core region and the dummy channel holes are in a staircase region. The stack of alternating sacrificial gate layers and insulating layers extend from the core region into in the staircase region of a stair-step form. The method further includes determining a first shape for defining the dummy channel holes in a layout based on the characterization of the etch process. The first shape is different from a second shape for defining the channel holes.