Abstract: To enhance properties of a ferromagnetic film formed on a substrate. One aspect of the present invention is a film structure body having a single crystal substrate, and a first ferromagnetic film oriented and formed on the single crystal substrate.

Abstract: To provide a ferroelectric film having improved uniformity in the composition of the film surface and the composition of the entire film, or a manufacturing method thereof. An aspect of the present invention is a ferroelectric film including a ferroelectric coated and sintered crystal film; and a ferroelectric crystal film formed on the ferroelectric coated and sintered crystal film, by a sputtering method, wherein the ferroelectric coated and sintered crystal film is formed by coating a solution having a metal compound containing, in an organic solvent, all of or a part of constituent metals of the ferroelectric crystal film and a partial polycondensation product thereof and by heating the same to be crystallized.

Abstract: There is provided a manufacturing method of a ferroelectric crystal film in which an orientation of a seed crystal film is transferred preferably and a film deposition rate is suitable for volume production. A seed crystal film is formed on a substrate in epitaxial growth by a sputtering method, an amorphous film including ferroelectric material is formed over the seed crystal film by a spin-coat coating method, the seed crystal film and the amorphous film are heated in an oxygen atmosphere for oxidation and crystallization of the amorphous film, and thereby a ferroelectric coated-and-sintered crystal film is formed.

Abstract: To provide a PBNZT ferroelectric film capable of preventing sufficiently oxygen ion deficiency. The PBNZT ferroelectric film according to an embodiment of the present invention is a ferroelectric film including a perovskite-structured ferroelectric substance represented by ABO3, wherein the perovskite-structured ferroelectric substance is a PZT-based ferroelectric substance containing Pb2+ as A-site ions and containing Zr4+ and Ti4+ as B-site ions, and the A-site contains Bi3+ as A-site compensation ions and the B-site contains Nb5+ as B-site compensation ions.

Abstract: There is provided a manufacturing method of a ferroelectric crystal film in which an orientation of a seed crystal film is transferred preferably and a film deposition rate is suitable for volume production. A seed crystal film is formed on a substrate in epitaxial growth by a sputtering method, an amorphous film including ferroelectric material is formed over the seed crystal film by a spin-coat coating method, the seed crystal film and the amorphous film are heated in an oxygen atmosphere for oxidation and crystallization of the amorphous film, and thereby a ferroelectric coated-and-sintered crystal film is formed.

Abstract: A thermal poling method in which a poling treatment can be performed easily by a dry process. The poling treatment is performed on a PZT film by performing a heat treatment on the PZT film under a pressurized oxygen atmosphere at a temperature of 400° C. or more and 900° C. or less. The PZT film before the heat treatment has a single-domain crystal structure, and the PZT film after the heat treatment has a multi-domain crystal structure.

Abstract: To obtain a piezoelectric film having excellent piezoelectric properties. An aspect of the present invention relates to ferroelectric ceramics including a first Sr(Ti1-xRux)O3 film and a PZT film formed on the first Sr(Ti1-xRux)O3 film, wherein the x satisfies a formula 1 below. 0.01?x?0.

Abstract: A pressurizing-type lamp annealing device which can easily handle a substrate to be treated having a large surface area. An embodiment of the pressurizing-type lamp annealing device includes: a treatment chamber (25); a holding part (23) disposed in the treatment chamber to hold a substrate to be treated; a gas-introduction mechanism for introducing a pressurized gas into the treatment chamber; a gas-discharge mechanism for discharging the gas in the treatment chamber; a transparent tube (20) disposed in the treatment chamber; and a lamp heater (19) placed in the treatment chamber to irradiate the substrate with a lamp light through the transparent tube.

Abstract: To provide a PBNZT ferroelectric film capable of preventing sufficiently oxygen ion deficiency. The PBNZT ferroelectric film according to an embodiment of the present invention is a ferroelectric film including a perovskite-structured ferroelectric substance represented by ABO3, wherein the perovskite-structured ferroelectric substance is a PZT-based ferroelectric substance containing Pb2+ as A-site ions and containing Zr4+ and Ti4+ as B-site ions, and the A-site contains Bi3+ as A-site compensation ions and the B-site contains Nb5+ as B-site compensation ions.

Abstract: A thermal poling method in which a poling treatment can be performed easily by a dry process. The poling treatment is performed on a PZT film by performing a heat treatment on the PZT film under a pressurized oxygen atmosphere at a temperature of 400° C. or more and 900° C. or less. The PZT film before the heat treatment has a single-domain crystal structure, and the PZT film after the heat treatment has a multi-domain crystal structure.

Abstract: To obtain a piezoelectric film having excellent piezoelectric properties. One aspect of the present invention relates to ferroelectric ceramics including a ZrO2 film oriented in (200), a Pt film that is formed on the ZrO2 film and is oriented in (200) and a piezoelectric film formed on the Pt film.

Abstract: To enhance piezoelectric property. One aspect of the present invention is ferroelectric ceramics including a Pb(Zr1-xTix)O3 film, wherein: the x satisfies the following formula 1, the Pb(Zr1-xTix)O3 film has a plurality of columnar single crystals, the x axis, the y axis and the z axis of each of the plurality of columnar single crystals are oriented in the same direction, respectively, 0<x<1??formula 1.

Abstract: To perform poling treatment in a simple procedure by dry process. A magnetic field poling device includes a first holding part configured to hold a film-to-be-poled (2); a second holding part configured to hold a magnet generating a magnetic field B to the film-to-be-poled (2); and a moving mechanism configured to move the first holding part or the second holding part in a direction perpendicular to the direction of the magnetic field B.

Abstract: To produce a ferroelectric film formed of a lead-free material. The ferroelectric film according to an aspect of the present invention includes a (K1-XNaX)NbO3 film or a BiFeO3 film having a perovskite structure and a crystalline oxide preferentially oriented to (001) formed on at least one of the upper side and lower side of the (K1-XNaX)NbO3 film or BiFeO3 film, and X satisfies the formula below 0.3?X?0.7.

Abstract: To obtain a piezoelectric film having excellent piezoelectric properties. An aspect of the present invention is a piezoelectric film having a crystal oriented in the c-axis direction and a crystal oriented in the a-axis direction, in which, when denoting the amount of a (004) component of the crystal oriented in the c-axis direction by C and denoting the amount of a (400) component of the crystal oriented in the a-axis direction by A, the piezoelectric film satisfies a formula 1 below. C/(A+C)?0.

Abstract: To improve the single crystallinity of a stacked film in which a ZrO2 film and a Y2O3 film are stacked or a YSZ film. A crystal film includes a Zr film and a stacked film in which a ZrO2 film and a Y2O3 film formed on the Zr film are stacked, and has a peak half-value width when the stacked film is evaluated by X-ray diffraction being 0.05° to 2.0°.

Abstract: To improve a piezoelectric property. One aspect of the present invention is ferroelectric ceramics including: a Pb(Zr1-ATiA)O3 film; and a Pb(Zr1-xTix)O3 film formed on the Pb(Zr1-ATiA)O3 film; wherein the A and x satisfy the following Formulae 1 to 3: 0?A?0.1??Formula 1 0.1<x<1??Formula 2 A<x??Formula 3.

Abstract: To provide a CxNyHz film of high density and a deposition method. One aspect of the present invention is a CxNyHz film formed on a substrate to be deposited, wherein x, y and z satisfy formulae (1) to (4) below: 0.4<x<0.7??(1) 0.01<y<0.5??(2) 0?z<0.3??(3) x+y+z=1.

Abstract: To provide a PBNZT ferroelectric film capable of preventing sufficiently oxygen ion deficiency. The PBNZT ferroelectric film according to an embodiment of the present invention is a ferroelectric film including a perovskite-structured ferroelectric substance represented by ABO3, wherein the perovskite-structured ferroelectric substance is a PZT-based ferroelectric substance containing Pb2+ as A-site ions and containing Zr4+ and Ti4+ as B-site ions, and the A-site contains Bi3+ as A-site compensation ions and the B-site contains Nb5+ as B-site compensation ions.

Abstract: To produce a ferroelectric film formed of a lead-free material. The ferroelectric film according to an aspect of the present invention includes a (K1?XNaX)NbO3 film or a BiFeO3 film having a perovskite structure and a crystalline oxide preferentially oriented to (001) formed on at least one of the upper side and lower side of the (K1?XNaX)NbO3 film or BiFeO3 film, and X satisfies the formula below 0.3?X?0.7.