Abstract: An object of the present invention is to provide a method and apparatus for cleaning a source gas introduction pipe, which can prevent strong adhesion of contaminant mainly containing carbon powder on an outer surface of the source gas introduction pipe to easily remove the contaminant in a short period of time. The invention is characterized in that, while compressed air is sprayed toward the contaminant, the contaminant removed by the spray of the compressed air is exhausted outside a system of a deposition chamber by suction and exhausting means so that the contaminant is not transferred to sides of the deposition chamber and a plastic container in which a CVD film is formed, in a process for extracting the source gas introduction pipe from the plastic container after the CVD film is formed on an inner surface of the plastic container.

Abstract: [Object] To provide an MOCVD apparatus and a MOCVD method which can deposit a thin film having satisfactory properties by preventing temperature decrease of a source gas. [Solving Means] An MOCVD apparatus according to the present invention is an apparatus for supplying a source gas as a mixture of an MO source gas with an oxidizing gas to a substrate 13 to thereby form a film. The MOCVD apparatus includes a substrate holder 14 for holding the substrate 13; a deposition chamber for housing the substrate holder; a supply mechanism for supplying the source gas to a surface of the substrate; and a heating device for heating the substrate 13 held by the substrate holder. The deposition chamber includes a substrate housing unit for housing the substrate holder holding the substrate, and a passage housing unit being connected to the substrate housing unit and constituting a passage for supplying the source gas to the substrate.

Abstract: A production device for a DLC film-coated plastic container and a production method therefor, capable of forming DLC (diamond-like carbon) films simultaneously on the inner surfaces of a plurality of plastic containers, and reducing variations in film thickness. A production device for DLC film-coated plastic containers, for forming a plurality DLC films simultaneously, characterized by comprising a columnar external electrode (3) having housing spaces in which a plurality of plastic containers (7a-7d) can be disposed in parallel and independently, internal electrodes (9a-9d) respectively disposed in the housed containers (7a-7d), a matching box (14) connected to the external electrode (3) and impedance-matching a high-frequency load, and a high-frequency power supply (15) connected to the matching box.

Abstract: The invention provides a film forming apparatus that is capable of forming films sequentially with two types of film forming mechanisms in the same chamber. The film forming apparatus according to the present invention includes a Pt target disposed at one side within a film forming chamber, a sputtering output mechanism to supply to the Pt target, a Pt vapor deposition source disposed at an other side within the film forming chamber, a vapor deposition output mechanism to supply to the Pt vapor deposition source, a substrate holder disposed between the Pt target and the Pt vapor deposition source within the film forming chamber to mount a substrate, a rotating mechanism to move the substrate holder so that the substrate directs to the Pt target or to the Pt vapor deposition source, a heating mechanism to heat the substrate when the substrate is subjected to a sputtering film forming, and a cooling mechanism to cool the substrate when the substrate is subjected to vapor deposition film forming.

Abstract: The invention provides a film forming apparatus that is capable of forming films sequentially with two types of film forming mechanisms in the same chamber. The film forming apparatus according to the present invention includes a Pt target disposed at one side within a film forming chamber, a sputtering output mechanism to supplying to the Pt target, a Pt vapor deposition source disposed at an other side within the film forming chamber, vapor deposition output mechanism to supply to the Pt vapor deposition source, a substrate holder disposed between the Pt target and the Pt vapor deposition source within the film forming chamber to mount a substrate, a rotating mechanism to move the substrate holder so that the substrate directs to the Pt target or to the Pt vapor deposition source, a heating mechanism to heat the substrate when the substrate is subjected to a sputtering film forming, and a cooling mechanism to cool the substrate when the substrate is subjected to vapor deposition film forming.

Abstract: [Problem] To provide a film forming apparatus being capable of forming films sequentially with two types of film forming mechanisms in the same chamber.

Abstract: To provide an apparatus and method for forming a thin-film using raw material fluid containing a film ingredient and supercritical fluid or liquid.