Abstract: To provide a PBNZT ferroelectric film capable of preventing sufficiently oxygen ion deficiency. The PBNZT ferroelectric film according to an embodiment of the present invention is a ferroelectric film including a perovskite-structured ferroelectric substance represented by ABO3, wherein the perovskite-structured ferroelectric substance is a PZT-based ferroelectric substance containing Pb2+ as A-site ions and containing Zr4+ and Ti4+ as B-site ions, and the A-site contains Bi3+ as A-site compensation ions and the B-site contains Nb5+ as B-site compensation ions.

Abstract: An object is to cause a piezoelectric film to perform a piezoelectric operation at a higher voltage than the conventional piezoelectric film. An aspect of the present invention is a piezoelectric film, wherein a voltage at which a piezoelectric butterfly curve that is a result obtained by measuring a piezoelectric property of a piezoelectric film takes a minimum value is larger by 2 V or more than a coercive voltage of a hysteresis curve that is a result obtained by measuring a hysteresis property of said piezoelectric film. The piezoelectric film includes an anti-ferroelectric film, and a ferroelectric film formed on the anti-ferroelectric film.

Abstract: Ferroelectric ceramics including: a Pb(Zr1-BTiB)O3 seed crystal film formed on a foundation film; and a Pb(Zr1-xTix)O3 crystal film, wherein: the seed crystal film is formed by sputtering while the foundation film is being disposed on an upper side of a sputtering target and the foundation film is being made to face the sputtering target; in the seed crystal film, a Zr/Ti ratio on the crystal film side from the center in the thickness direction thereof is larger than a Zr/Ti ratio on the foundation film side from the center in the thickness direction thereof; the crystal film is crystallized by coating and heating a solution containing, in an organic solvent, a metal compound wholly or partially containing ingredient metals of the crystal film and a partial polycondensation product thereof; and the B and the x satisfy formulae 2 and 3, respectively, below, 0.1<B<1??formula 2 0.1<x<1??formula 3.

Abstract: To provide a substrate treatment apparatus capable of suppressing adherence of dust to a film coated on a substrate. As an aspect of the present invention is a substrate treatment apparatus provided with a spin-coating treatment chamber 4a for coating a film on the substrate by spin-coating, a first air-conditioning mechanism that regulates an amount of dust in the air in the spin-coating treatment chamber, an annealing treatment chamber 7a for performing lamp annealing treatment on the film coated on the substrate, a conveying chamber 2a that is connected to each of the spin-coating treatment chamber and the annealing treatment chamber and is for conveying the substrate between the spin-coating treatment chamber and the annealing treatment chamber each other, and a second air-conditioning mechanism that regulate an amount of dust in the air in the conveying chamber.

Abstract: A method for manufacturing a ferroelectric film including the steps of forming a burnable material film containing hydrogen of not less than 1% by weight on a substrate; forming an amorphous thin film including a ferroelectric material on the burnable material film; and oxidizing and crystallizing the amorphous thin film while supplying hydrogen to the amorphous thin film by burning the burnable material film through heating of the burnable material film and the amorphous thin film in an oxygen atmosphere, to thereby form a first ferroelectric film on the substrate.

Abstract: To produce a ferroelectric film formed of a lead-free material. The ferroelectric film according to an aspect of the present invention includes a (K1-XNaX)NbO3 film or a BiFeO3 film having a perovskite structure and a crystalline oxide preferentially oriented to (001) formed on at least one of the upper side and lower side of the (K1-XNaX)NbO3 film or BiFeO3 film, and X satisfies the formula below 0.3?X?0.7.

Abstract: To provide a method for manufacturing a ferroelectric film formed of a lead-free material. The method for manufacturing a ferroelectric film according to an aspect of the present invention is a method for manufacturing a ferroelectric film including the steps of pouring a sol-gel solution for forming (K1-XNaX)NbO3 into a mold 3, calcining the sol-gel solution to form a (K1-XNaX)NbO3 material film inside the mold 3, heat-treating and crystallizing the (K1-XNaX)NbO3 material film in an oxygen atmosphere to form a (K1-XNaX)NbO3 crystallized film inside the mold 3 and removing the mold 3 through etching, and is characterized in that the mold 3 is more easily etched than the (K1-XNaX)NbO3 crystallized film and the X satisfies a formula below 0.3?X?0.7.

Abstract: A plasma poling device includes a holding electrode (4) which is disposed in a poling chamber (1) and holds a substrate to be poled (2), an opposite electrode (7) which is disposed in the poling chamber and disposed facing the substrate to be poled held on the holding electrode, a power source (6) electrically connected to one electrode of the holding electrode and the opposite electrode, a gas supply mechanism supplying a plasma forming gas into a space between the opposite electrode and the holding electrode, and a control unit controlling the power source and the gas supply mechanism. The control unit controls the power source and the gas supply mechanism so as to form a plasma at a position facing the substrate to be poled and to apply a poling treatment to the substrate to be poled.

Abstract: There is provided a manufacturing method of a ferroelectric crystal film in which an orientation of a seed crystal film is transferred preferably and a film deposition rate is suitable for volume production. A seed crystal film is formed on a substrate in epitaxial growth by a sputtering method, an amorphous film including ferroelectric material is formed over the seed crystal film by a spin-coat coating method, the seed crystal film and the amorphous film are heated in an oxygen atmosphere for oxidation and crystallization of the amorphous film, and thereby a ferroelectric coated-and-sintered crystal film is formed.

Abstract: A method for manufacturing a ferroelectric film including the steps of forming a burnable material film containing hydrogen of not less than 1% by weight on a substrate; forming an amorphous thin film including a ferroelectric material on the burnable material film; and oxidizing and crystallizing the amorphous thin film while supplying hydrogen to the amorphous thin film by burning the burnable material film through heating of the burnable material film and the amorphous thin film in an oxygen atmosphere, to thereby form a first ferroelectric film on the substrate.

Abstract: The plasma poling device includes: a holding electrode 4 being disposed in a poling chamber 1 and holding a substrate to be subjected to poling 2 thereon; an opposite electrode 7 being disposed in the poling chamber and being disposed opposite to the substrate to be subjected to poling held on the holding electrode; a power source 6 being electrically connected to either the holding electrode or the opposite electrode; a gas supply mechanism supplying a gas for forming plasma to a space between the opposite electrode and the holding electrode; and a control unit controlling the power source and the gas supply mechanism, wherein the control unit controls the power source and the gas supply mechanism, so as to form a plasma at a position opposite to the substrate to be subjected to poling to thereby perform poling treatment on the substrate to be subjected to poling.

Abstract: The invention provides a film forming apparatus that is capable of forming films sequentially with two types of film forming mechanisms in the same chamber. The film forming apparatus according to the present invention includes a Pt target disposed at one side within a film forming chamber, a sputtering output mechanism to supply to the Pt target, a Pt vapor deposition source disposed at an other side within the film forming chamber, a vapor deposition output mechanism to supply to the Pt vapor deposition source, a substrate holder disposed between the Pt target and the Pt vapor deposition source within the film forming chamber to mount a substrate, a rotating mechanism to move the substrate holder so that the substrate directs to the Pt target or to the Pt vapor deposition source, a heating mechanism to heat the substrate when the substrate is subjected to a sputtering film forming, and a cooling mechanism to cool the substrate when the substrate is subjected to vapor deposition film forming.

Abstract: A vaporizer, a semiconductor production apparatus and process capable of improving the efficiency in the use of a raw material gas noticeably, enabling uniform deposition according to the raw material gas used, diminishing maintenance frequency to improve productivity. At the time of ALD operation, carrier gas continues to be supplied to a reaction chamber 402, while supplying a material solution of predetermined quantity according to a film thickness of one atomic or molecular layer determined by a micro-metering pump 54, intermittently to an evaporation mechanism 20. Thus, a gas shower type heat CVD apparatus 1 enables a thin film of a desired thickness made of one atomic or molecular layer to be formed on a substrate 420 one by one, while avoiding the raw material gas being thrown away by the opening or closing operation of the reaction-chamber side valve 404 and the vent side valve 407.

Abstract: A rotary type CVD film forming apparatus for mass production, wherein a film forming chamber is formed by providing one columnar body having a plurality of housing spaces for housing one plastic container each in one said housing space, a plurality of said film forming chambers is arranged on a rotation support body at equal intervals in a circular state, source gas introduction means serving as an external electrode which introduce a source gas that is converted to plasma inside the plastic containers housed in each of said film forming chambers is provided, and high frequency supply means which supply a high frequency to the external electrode of each of said film forming chambers is provided to form a CVD (chemical vapor growing) film on the internal surfaces of said plastic containers.

Abstract: The present invention relates to a vaporizer for CVD, a solution-vaporization type CVD apparatus and a vaporization method for CVD which suppress clogging of a solution pipe or the like and extend continuous operation times. A vaporizer for CVD of the present invention comprises a plurality of raw-material solution pipes which respectively supply a plurality of raw-material solutions separately from one another, a carrier gas pipe disposed in such a manner as to surround the exteriors of the raw-material-solution pipes and allows the pressurized carrier gas to flow to the exterior of each of the plurality of raw-material-solution pipes, an orifice provided in the leading end of the carrier gas pipe, and spaced away from the leading ends of the raw-material-solution pipes, a vaporization tube connected to the leading end of the carrier gas pipe and led to the interior of the carrier gas pipe via the orifice, and a heater which is heating means for heating the vaporization tube.

Abstract: A method and apparatus for cleaning a source gas introduction pipe, which can prevent strong adhesion of contaminant mainly containing carbon powder on an outer surface of the source gas introduction pipe to easily remove the contaminant in a short period of time. While compressed air is sprayed toward the contaminant, the contaminant removed by the spray of the compressed air is exhausted outside a system of a deposition chamber by suction and exhausting device so that the contaminant is not transferred to sides of the deposition chamber and a plastic container in which a CVD film is formed, in a process for extracting the source gas introduction pipe from the plastic container after the CVD film is formed on an inner surface of the plastic container.

Abstract: A method of manufacturing a gas barrier film coated plastic container with high gas-barrier properties by solving a problem in a conventional method wherein the formation of a gas barrier film is obstructed by water molecules adsorbed in the plastic container and the container with reduced gas-barrier properties is manufactured. The method is characterized by comprising the steps of decreasing a pressure inside the plastic container or decreasing a pressure to the entire part of the plastic container, flowing dry gas as leak gas when vacuum is released to fill the inside of the container with the dry gas for drying the plastic container, replacing the gas inside the plastic container with a material gas or a material gas-containing gas, and plasmatizing the material gas to form the gas barrier film on the inner surface of the plastic container by a CVD method.

Abstract: Object of present invention to overcome a problem of a dispersion of an evaluation of gas barrier property depending on absorbed moisture of plastic, and carry out measurements in which a measurement value response is good and accuracy is good, wherein from the beginning of a container the gas barrier property of a plastic molded body does not depend on the amount of moisture absorbed thereof. A method of measuring the gas barrier property of the plastic molded body such as a plastic container, a plastic sheet or a plastic film or the like which uses a gas analyzer to measure the amount of permeation of a measurement object gas permeating through the plastic molded body, comprising: a heat drying process which heats and dries said plastic molded body in a temperature range which does not cause deformation or heat deterioration.

Abstract: The invention provides an MOCVD apparatus and a MOCVD method which can deposit a thin film having satisfactory properties by reducing or preventing temperature decrease of a source gas. An MOCVD apparatus according to the present invention supplies a source gas, as a mixture of an MO source gas, with an oxidizing gas to a substrate to thereby form a film. The MOCVD apparatus includes a substrate holder to hold the substrate; a deposition chamber to house the substrate holder; a supply mechanism to supply the source gas to a surface of the substrate; and a heating device to heat the substrate held by the substrate holder. The deposition chamber includes a substrate housing unit to house the substrate holder holding the substrate, and a passage housing unit connected to the substrate housing unit and constituting a passage to supply the source gas to the substrate.

Abstract: A method of forming a thin-film including a capability to remove contaminants from the formed thin-film and/or a substrate on which the thin-film is formed using alcohol. The method includes allowing a substrate holder to support a substract. A first mixture is produced by mixing a condensation polymer containing an element of metal oxide compound and alcohol. Then second mixture is produced by mixing supercritical fluid or liquid carbon dioxide and the first mixture. A thin film is formed by applying the second mixture on a surface of the substrate. After forming the thin-film, the substrate is cleaned by applying alcohol to upper and lower surfaces, preferably the whole upper and lower surfaces, of the substract. The thin-film is crystallized by heating, and the crystallizing may include applying oxygen in a crystallizing chamber. Soft X-rays may be applied to the substrate, during the forming of the thin-film on the surface of the substrate.