Abstract: The photosensitive region includes a first impurity region and a second impurity region having a higher impurity concentration than that of the first impurity region. The photosensitive region includes one end positioned away from the transfer section in the second direction and another end positioned closer to the transfer section in the second direction. A shape of the second impurity region in plan view is line-symmetric with respect to a center line of the photosensitive region along the second direction. A width of the second impurity region in the first direction increases in a transfer direction from the one end to the other end. An increase rate of the width of the second impurity region in each of sections, obtained by dividing the photosensitive region into n sections in the second direction, becomes gradually higher in the transfer direction. Here, n is an integer of two or more.

Abstract: Disclosed are a light emitting structure and a preparation method therefor. The method includes: forming a mask layer on a n-type substrate, disposing a plurality of openings in the mask layer; and forming a light emitting unit in each of the plurality of openings, including: forming a metal atomic layer in the opening; forming an n-type semiconductor layer on the metal atomic layer, and forming a light extraction structure on the n-type semiconductor layer; and sequentially forming an active layer and a p-type semiconductor layer on the n-type semiconductor layer and the light extraction structure. In this way, step of peeling off the substrate may be avoided. In addition, with a plurality of discrete light emitting structures formed on the same substrate, a step of cutting a device is avoided, and damage to the device can be prevented.

Abstract: An electronic device and a method of manufacturing the electronic device are provided. The electronic device includes a semiconductor substrate and a light emitting module. The semiconductor substrate includes multiple transistors and multiple photo diodes. The light emitting module is disposed on the semiconductor substrate and includes multiple light emitting elements. The light emitting elements are respectively electrically connected to the transistors, and the light emitting elements do not overlap with the photo diodes.

Abstract: A driving circuit film configured to be bond at a periphery region of a display panel. The driving circuit film includes a flexible substrate, a gate driving circuit and a source driver. The gate driving circuit is disposed on the flexible substrate, and the gate driving circuit includes a Thin-Film Transistor. The source driver is disposed on the flexible substrate.

Abstract: Provided is an epitaxial design/structure and transistor platform for a III-N transistor/chip incorporating a backside conductive/metal layer. The backside metal may serve several functions in the transistor/chip, including serving as a back gate, a field plate, and an electrode to deliver power to the devices and circuits, for example, as part of a backside power delivery network (BSPDN). Also provided are methods of preparing/fabricating the epitaxial design/structure and transistor platform described herein.

Abstract: Disclosed is an image sensor, comprising: at least one photosensitive unit, where the photosensitive unit includes a main photosensitive region and an auxiliary photosensitive region arranged at the periphery of the main photosensitive region, and a photosensitive component content of the main photosensitive region is different from a photosensitive component content of the auxiliary photosensitive region. The disclosure enlarges a wavelength range of sensible light of each the photosensitive unit by arranging the auxiliary photosensitive region at the periphery of the main photosensitive region of the photosensitive unit, where the photosensitive component content of the main photosensitive region is different from that of the auxiliary photosensitive region. Thereby more image details may be recorded to generate images with high dynamic range, which enables people to experience a visual effect close to a real environment.

Abstract: A semiconductor structure is provided. The semiconductor structure includes a gate structure over a fin structure, and a source/drain structure in the fin structure and adjacent to the gate structure. The source/drain structure includes: a first epitaxial layer over the fin structure, a second epitaxial layer over the first epitaxial layer, and an epitaxial capping layer over the second epitaxial layer. The semiconductor structure also includes a silicide layer formed in contact with the source/drain structure. The silicide layer has a curved bottom surface, and the curved bottom surface of the silicide layer intersects with the second epitaxial layer and the epitaxial capping layer.

Abstract: A memory device includes first nanostructures stacked on top of one another; first gate stacks, where two adjacent ones of the first gate stacks wrap around a corresponding first nanostructure; second nanostructures stacked on top of one another; second gate stacks, where two adjacent ones of the second gate stacks wrap around a corresponding second nanostructure; a first drain/source feature electrically coupled to a first end of the first nanostructures; a second drain/source feature electrically coupled to both of a second end of the first nanostructures and a first end of the second nanostructures; and a third drain/source feature electrically coupled to a second end of the second nanostructures. At least one of the plurality of first gate stacks is in direct contact with at least one of the first drain/source feature or the second drain/source feature.

Abstract: Various embodiments of the present disclosure are directed towards an integrated chip having a first image sensor element including a first doped region disposed within a substrate. The substrate comprises a first material and has a first surface opposite a second surface. A second image sensor element overlies the first image sensor element. The second image sensor element includes an active layer disposed in the substrate directly over the first doped region. The first doped region and the active layer are spaced vertically between the first and second surfaces of the substrate. The active layer comprises a second material different from the first material.

Abstract: A display apparatus, including: the display panel includes multiple pixel islands arranged at intervals in a row direction and a column direction; odd rows of pixel islands and even rows of pixel islands are staggered in the row direction, and odd adjacent boundaries, extending in the column direction, of any two adjacent odd and even columns of pixel islands are colinearly arranged. Each pixel island includes multiple sub-pixels arranged at intervals in the row direction and the column direction, rows of sub-pixels in each pixel island are staggeredly arranged in sequence in the row direction, and adjacent boundaries, extending in the column direction, of any two adjacent columns the sub-pixels are collinearly arranged; and the light-splitting assembly is at a display surface side of the display panel and includes multiple lenses that extend in the column direction and are arranged at intervals in the row direction.

Abstract: A quantum device (1) includes a plurality of first conductors (2), a plurality of second conductors (4), and a conductor layer (6). The first conductors (2), the second conductors (4), and the conductor layer (6) are formed of superconducting materials. An oxide film (8) is formed between the first conductors (2) and the second conductors (4). A Josephson junction (10) is formed by a part of one of the plurality of first conductors (2), a part of one of the plurality of second conductors (4), and the oxide film (8). The one first conductor (2) constituting the Josephson junction (10) and the conductor layer (6) are connected to each other directly or through another conductor. The one second conductor (4) constituting the Josephson junction (10) and the conductor layer (6) are connected to each other directly or through another conductor.

Abstract: This disclosure discloses a light-emitting element having a light-emitting unit, a transparent layer and a wavelength conversion layer formed on the transparent layer. The transparent layer covers the light-emitting unit. The wavelength conversion layer includes a phosphor layer having a phosphor and a stress release layer without the phosphor.

Abstract: An electronic device includes a diode, a driving circuit, a first signal line, a second signal line, a first electrostatic protection circuit and a second electrostatic protection circuit. The diode has a first end and a second end. The first signal line is coupled between the first end and the driving circuit. The second signal line is coupled between the second end and the driving circuit. The first electrostatic protection circuit is coupled to the first signal line. The second electrostatic protection circuit is coupled to the second signal line.

Abstract: A superconducting circuit includes a first port and a plurality of second ports; a plurality of filter poles, each filter pole comprising an inductor and a capacitor connected in parallel, between the first port and a second port in the plurality of second ports; an admittance inverter comprising at least one of a coupling capacitor, a coupling inductor, and a Josephson junction, the admittance inverter linking two successive filter poles together. The plurality of filter poles and associated admittance inverters define a plurality of current branches so that, when operating as a demultiplexer, an input electrical current input though the first port is routed to a selected one of the plurality of the plurality of second ports by an application of a first set of magnetic flux biases.

Abstract: A metal oxide semiconductor field effect transistor (MOSFET) device, and methods for manufacturing and using the same. In some implementations, the MOSFET device includes a plurality of gate structures which are parallel to each other and separated from each other, and a termination structure having a first edge adjacent to the plurality of gate structures and a second edge on a side of the termination structure opposite the first edge. Each of the plurality of gate structures has a curved edge adjacent to the first edge of the termination structure, and the second edge of the termination structure is curved concave to the curved edges of the plurality of gate structures.

Abstract: A semiconductor device according to an embodiment includes, a silicon carbide layer having first and second planes; a first electrode on the first plane; a second electrode on the second plane; a first conductivity type first silicon carbide region; second and third silicon carbide regions of a second conductivity type between the first silicon carbide region and the first plane; a first conductivity type fifth silicon carbide region between the first and the second silicon carbide region with higher impurity concentration than the first silicon carbide region; a first conductivity type sixth silicon carbide region between the first and the third silicon carbide region with higher impurity concentration than the first silicon carbide region; a first conductivity type seventh silicon carbide region between the fifth and the sixth silicon carbide region with lower impurity concentration than the fifth and the sixth silicon carbide region; and a gate electrode.

Abstract: A package device and a manufacturing method thereof are provided. The package device includes a redistribution layer including a first dielectric layer, a conductive layer, and a second dielectric layer. The conductive layer is disposed between the first dielectric layer and the second dielectric layer. The redistribution layer has a test mark, the test mark includes a plurality of conductive patterns formed of the conductive layer, and the conductive patterns are arranged in a ring shape.

Abstract: A monolithic LED array precursor comprising a plurality of LED structures sharing a first semiconductor layer, wherein the first semiconductor layer defines a plane of the LED array precursor, each LED structure comprising (i) a second semiconductor layer on the first semiconductor layer, having an upper surface portion parallel to the plane of the LED array precursor, the second semiconductor layer having a regular trapezoidal cross-section normal to the upper surface portion, such that the second semiconductor layer has sloped sides, (ii) a third semiconductor layer on the second semiconductor layer, having an upper surface portion parallel to the plane of the LED array precursor, the third semiconductor layer having a regular trapezoidal cross-section normal to the upper surface portion, such that the third semiconductor layer has sloped sides parallel to the sloped sides of the second semiconductor layer, (iii) a fourth semiconductor layer on the third semiconductor layer, having an upper surface portion

Abstract: A display substrate includes: a base substrate; a plurality of pixel circuits on the base substrate; and a plurality of pixels; the pixel includes a first sub-pixel, a second sub-pixel and a third sub-pixel; orthographic projections of the first sub-pixel, the second sub-pixel and the third sub-pixel on the base substrate do not overlap with each other; the first sub-pixel, the second sub-pixel and the third sub-pixel are electrically connected to the pixel circuits in a one-to-one correspondence manner; a first distance in a first direction exists between the first sub-pixel and the second sub-pixel, and a first via is arranged in the first distance; a second distance in the first direction exists between the first sub-pixel and the third sub-pixel, and a first via is arranged in the second distance; a third distance in the first direction exists between the second sub-pixel and the third sub-pixel.

Abstract: Techniques are disclosed for facilitating multi-etch detector pixels fabrication. In one example, a method includes forming a semiconductor structure. The semiconductor structure includes a substrate layer, an absorber layer disposed on the substrate layer, a barrier layer disposed on the absorber layer, and a first contact layer disposed on the barrier layer. The method further includes forming the pixels from the semiconductor structure. The forming of the pixels includes performing a first etching operation to remove a portion of at least the first contact layer, and performing a second etching operation to remove a portion of the barrier layer and a portion of the absorber layer. Each of the pixels includes a respective portion of each of the substrate layer, the first contact layer, the barrier layer, and the absorber layer. Related systems and devices are also provided.