Abstract: Various embodiments of the present disclosure are directed towards an integrated chip having a first image sensor element including a first doped region disposed within a substrate. The substrate comprises a first material and has a first surface opposite a second surface. A second image sensor element overlies the first image sensor element. The second image sensor element includes an active layer disposed in the substrate directly over the first doped region. The first doped region and the active layer are spaced vertically between the first and second surfaces of the substrate. The active layer comprises a second material different from the first material.

Abstract: A display apparatus, including: the display panel includes multiple pixel islands arranged at intervals in a row direction and a column direction; odd rows of pixel islands and even rows of pixel islands are staggered in the row direction, and odd adjacent boundaries, extending in the column direction, of any two adjacent odd and even columns of pixel islands are colinearly arranged. Each pixel island includes multiple sub-pixels arranged at intervals in the row direction and the column direction, rows of sub-pixels in each pixel island are staggeredly arranged in sequence in the row direction, and adjacent boundaries, extending in the column direction, of any two adjacent columns the sub-pixels are collinearly arranged; and the light-splitting assembly is at a display surface side of the display panel and includes multiple lenses that extend in the column direction and are arranged at intervals in the row direction.

Abstract: A quantum device (1) includes a plurality of first conductors (2), a plurality of second conductors (4), and a conductor layer (6). The first conductors (2), the second conductors (4), and the conductor layer (6) are formed of superconducting materials. An oxide film (8) is formed between the first conductors (2) and the second conductors (4). A Josephson junction (10) is formed by a part of one of the plurality of first conductors (2), a part of one of the plurality of second conductors (4), and the oxide film (8). The one first conductor (2) constituting the Josephson junction (10) and the conductor layer (6) are connected to each other directly or through another conductor. The one second conductor (4) constituting the Josephson junction (10) and the conductor layer (6) are connected to each other directly or through another conductor.

Abstract: This disclosure discloses a light-emitting element having a light-emitting unit, a transparent layer and a wavelength conversion layer formed on the transparent layer. The transparent layer covers the light-emitting unit. The wavelength conversion layer includes a phosphor layer having a phosphor and a stress release layer without the phosphor.

Abstract: An electronic device includes a diode, a driving circuit, a first signal line, a second signal line, a first electrostatic protection circuit and a second electrostatic protection circuit. The diode has a first end and a second end. The first signal line is coupled between the first end and the driving circuit. The second signal line is coupled between the second end and the driving circuit. The first electrostatic protection circuit is coupled to the first signal line. The second electrostatic protection circuit is coupled to the second signal line.

Abstract: A superconducting circuit includes a first port and a plurality of second ports; a plurality of filter poles, each filter pole comprising an inductor and a capacitor connected in parallel, between the first port and a second port in the plurality of second ports; an admittance inverter comprising at least one of a coupling capacitor, a coupling inductor, and a Josephson junction, the admittance inverter linking two successive filter poles together. The plurality of filter poles and associated admittance inverters define a plurality of current branches so that, when operating as a demultiplexer, an input electrical current input though the first port is routed to a selected one of the plurality of the plurality of second ports by an application of a first set of magnetic flux biases.

Abstract: A metal oxide semiconductor field effect transistor (MOSFET) device, and methods for manufacturing and using the same. In some implementations, the MOSFET device includes a plurality of gate structures which are parallel to each other and separated from each other, and a termination structure having a first edge adjacent to the plurality of gate structures and a second edge on a side of the termination structure opposite the first edge. Each of the plurality of gate structures has a curved edge adjacent to the first edge of the termination structure, and the second edge of the termination structure is curved concave to the curved edges of the plurality of gate structures.

Abstract: A semiconductor device according to an embodiment includes, a silicon carbide layer having first and second planes; a first electrode on the first plane; a second electrode on the second plane; a first conductivity type first silicon carbide region; second and third silicon carbide regions of a second conductivity type between the first silicon carbide region and the first plane; a first conductivity type fifth silicon carbide region between the first and the second silicon carbide region with higher impurity concentration than the first silicon carbide region; a first conductivity type sixth silicon carbide region between the first and the third silicon carbide region with higher impurity concentration than the first silicon carbide region; a first conductivity type seventh silicon carbide region between the fifth and the sixth silicon carbide region with lower impurity concentration than the fifth and the sixth silicon carbide region; and a gate electrode.

Abstract: A package device and a manufacturing method thereof are provided. The package device includes a redistribution layer including a first dielectric layer, a conductive layer, and a second dielectric layer. The conductive layer is disposed between the first dielectric layer and the second dielectric layer. The redistribution layer has a test mark, the test mark includes a plurality of conductive patterns formed of the conductive layer, and the conductive patterns are arranged in a ring shape.

Abstract: A monolithic LED array precursor comprising a plurality of LED structures sharing a first semiconductor layer, wherein the first semiconductor layer defines a plane of the LED array precursor, each LED structure comprising (i) a second semiconductor layer on the first semiconductor layer, having an upper surface portion parallel to the plane of the LED array precursor, the second semiconductor layer having a regular trapezoidal cross-section normal to the upper surface portion, such that the second semiconductor layer has sloped sides, (ii) a third semiconductor layer on the second semiconductor layer, having an upper surface portion parallel to the plane of the LED array precursor, the third semiconductor layer having a regular trapezoidal cross-section normal to the upper surface portion, such that the third semiconductor layer has sloped sides parallel to the sloped sides of the second semiconductor layer, (iii) a fourth semiconductor layer on the third semiconductor layer, having an upper surface portion

Abstract: A display substrate includes: a base substrate; a plurality of pixel circuits on the base substrate; and a plurality of pixels; the pixel includes a first sub-pixel, a second sub-pixel and a third sub-pixel; orthographic projections of the first sub-pixel, the second sub-pixel and the third sub-pixel on the base substrate do not overlap with each other; the first sub-pixel, the second sub-pixel and the third sub-pixel are electrically connected to the pixel circuits in a one-to-one correspondence manner; a first distance in a first direction exists between the first sub-pixel and the second sub-pixel, and a first via is arranged in the first distance; a second distance in the first direction exists between the first sub-pixel and the third sub-pixel, and a first via is arranged in the second distance; a third distance in the first direction exists between the second sub-pixel and the third sub-pixel.

Abstract: Techniques are disclosed for facilitating multi-etch detector pixels fabrication. In one example, a method includes forming a semiconductor structure. The semiconductor structure includes a substrate layer, an absorber layer disposed on the substrate layer, a barrier layer disposed on the absorber layer, and a first contact layer disposed on the barrier layer. The method further includes forming the pixels from the semiconductor structure. The forming of the pixels includes performing a first etching operation to remove a portion of at least the first contact layer, and performing a second etching operation to remove a portion of the barrier layer and a portion of the absorber layer. Each of the pixels includes a respective portion of each of the substrate layer, the first contact layer, the barrier layer, and the absorber layer. Related systems and devices are also provided.

Abstract: An integrated circuit, including a source region, a drain region, a channel region between the source region and the drain region, and a gate for inducing a conductive path through the channel region. The integrated circuit also includes structure, proximate a curved length of the gate, for inhibiting current flow along a portion of the channel region.

Abstract: A semiconductor device including a transistor on a substrate; an interlayer insulating layer on the transistor; a first metal-containing layer on the interlayer insulating layer; and a second metal-containing layer on the first metal-containing layer, wherein the second metal-containing layer includes a resistor, the resistor includes a first insulating layer on the first metal-containing layer; a resistor metal layer on the first insulating layer, and a second insulating layer on the resistor metal layer, and the resistor metal layer includes a recessed side surface.

Abstract: A display substrate and a display apparatus. Each pixel repeat unit (10) includes two pixel regions (P1, P2) arranged in a first direction, and a light transmission region (T) located between the two pixel regions (P1, P2), where each of the pixel regions (P1, P2) is provided with at least three sub-pixels (A, B, C) which are adjacently provided; and the area of the light transmission region (T) is equal to twice the area of a light transmission region (T) corresponding to a single pixel region (P1, P2).

Abstract: A quantum device capable of effectively cooling a quantum chip and an area (e.g., a space) therearound is provided. A quantum device includes a quantum chip and an interposer on which the quantum chip is located. The interposer includes an interposer substrate and an interposer wiring layer. The interposer wiring layer is disposed on a surface of the interposer substrate on a side on which the quantum chip is located. The interposer wiring layer includes, in at least a part thereof, a superconducting material layer formed of a superconducting material and a non-superconducting material layer formed of a non-superconducting material.

Abstract: A semiconductor device capable of high speed operation is provided. Further, a highly reliable semiconductor device is provided. An oxide semiconductor having crystallinity is used for a semiconductor layer of a transistor. A channel formation region, a source region, and a drain region are formed in the semiconductor layer. The source region and the drain region are formed in such a manner that one or more of elements selected from rare gases and hydrogen are added to the semiconductor layer by an ion doping method or an ion implantation method with the use of a channel protective layer as a mask.

Abstract: Disclosed is an organic electroluminescent device that employs a compound represented by Formula A-1 or A-2: and a compound represented by Formula B: The organic electroluminescent device has excellent luminescent properties such as high color purity and long lifetime.

Abstract: A semiconductor device includes resistor layers, and a wiring layer which is disposed at least either above or below the resistor layers. The resistor layers include first resistor layers and second resistor layers each having a width in a first direction smaller than a width of the first resistor layer in a first direction. The wiring layer includes first overlapping regions in which the wiring layer overlaps with the first resistor layers in plan view and second overlapping regions in which the wiring layer overlaps with the second resistor layers in plan view. A value obtained by dividing a total value of areas of the second overlapping regions by a width of the second resistor layer is smaller than a value obtained by dividing a total value of areas of the first overlapping regions by a width of the first resistor layer.

Abstract: In some embodiments, the present disclosure relates to a one-time program (OTP) memory cell. The OTP memory cell includes a read transistor and a program transistor neighboring the read transistor. The read transistor includes a read dielectric layer and a read gate electrode overlying the read dielectric layer. The program transistor includes a program dielectric layer and a program gate electrode overlying the program dielectric layer. The program transistor has a smaller breakdown voltage than the read transistor.