Abstract: A solar cell module comprising (a) a photovoltaic element, (b) a transparent resin filler layer, (c) a transparent surface layer, and (d) a reinforcing member, said transparent resin filler layer (b) and said transparent surface layer (c) being disposed in the named order on a light receiving face of said photovoltaic element, and said reinforcing member (d) being disposed on the rear face of said photovoltaic element, characterized in that said transparent surface layer comprises a film composed of a fluororesin with a high fluorine content selected from the group consisting of ethylene-tetrafluoroethylene copolymer, poly(chlorotrifluoroethylene) resin, ethylene-chlorotrifluoroethylene copolymer, tetrafluoroethyle-perfluoroalkylvinylether copolymer, and tetrafluoroethylene-hexafluoropropylene copolymer and which contains an ultraviolet absorber dispersed therein.

Abstract: Cathodic/anodic vacuum arc sources with plasma ion implantation deposition system for depositing high quality thin film coatings of complex compounds on a workpiece. Both cathodic and anodic vacuum arc deposition sources, CAVAD, are used to create a plasma vapor from solid materials composing the cathode and/or anode in the cathodic and/or anodic arc respectively. Gases, e.g., hydrogen or nitrogen can be in the deposited films by creating a background plasma of the desired gas using either RF energy, thermionic emission, or consequential ionization of the gas passing through the arc or around the substrate. Application of highly negative pulses to the substrate to extract the ions and provide them with the appropriate energy to interact with the other species in the thin film formation on the substrate to form the desired films. The substrate is bombarded with the ionized particles to form carbon nitrides with variable [N]/[C] ratios, referred to as CN.sub.x.

Abstract: A PVD sputter system having a nonplanar target surface is disclosed. The configuration of the nonplanar target surface is adjusted to provide improved uniformity in deposition film thickness and step coverage at the peripheral boundary regions of the substrate. Emission-inducing power is distributed independently to different portions of the nonplanar target surface so as to modify the deposition profile according to substrate size and other factors.

Abstract: A solar cell with integrated bypass function includes: a first conductivity type substrate 1 selected from P-type and N-type substrates; a region 2 of a second conductivity type which is opposite to the first conductivity type, the region 2 being formed on a light receiving side of the substrate; at least one third region 4 of the first conductivity type, having a higher dopant impurity concentration than the substrate 1 and being formed in a portion of the light receiving side of the substrate 1 so as to be in contact with both the substrate 1 and the region 2 of the second conductivity type; an insulator film 9 formed on at least a part of the at least one third region 4; and a light receiving side electrode 7 formed on the insulator film 9 so as to be in partial contact with the region 2 of the second conductivity type.

Abstract: A method for forming a semiconductor material involves forming an i-type non-single crystalline layer on a substrate and crystallizing the semiconductor material by irradiation with a light having a wavelength in the range of 250 to 600 nm. Desirably, the crystals of the semiconductor material extend in column form approximately perpendicular to the substrate. Preferably, the i-type layer is doped with a recombination center neutralizer selected from hydrogen and a halogen element and the concentration of impurities forming recombination centers, such as oxygen, nitrogen, carbon, phosphorus, and boron, are maintained at 1 atomic % or less.

Abstract: A solar cell module in which at least the light receiving surface side of a photovoltaic element is coated with a filler, characterized in that the filler is made of a composition containing vinylidene fluoride copolymer and acrylic resin. The solar cell module is excellent in weather resistance, heat resistance, adhesion to a photovoltaic element (solar cell), and scratch resistance. Moreover, it is capable of minimizing the deterioration of the performance of the solar cell due to moisture permeability, thereby achieving a desirable photoelectric conversion efficiency over a long period of time.

Abstract: For additional energy supply and for recharging the energy store of a network-independent, portable electrical energy user, at least one flexible solar cell which is fabricated of a thin silicon tri-crystal wafer is laminated on the surface of the energy user.

Abstract: The disclosure concerns various improvements in a solar energy plant of the kind in which incoming solar radiation is concentrated by a Fresnel reflector, i.e. a field of concentrating mirrors, and the concentrated radiation is focused into a solar receiver. By one improvement a dielectric mirror is provided at a suitable level above the solar collector, to reflect the concentrated solar radiation into the collector. By another disclosed improvement a plurality of non-imaging secondary concentrators arranged in concentric zones is provided intermediary between the dielectric mirror and receiver. By yet another improvement the solar receiver is directly attached to a heat storage system.

Abstract: A solar cell has a semiconductor layer sandwiched between first and second electrodes, wherein a zinc oxide layer containing carbon atoms, nitrogen atoms, or carbon and nitrogen atoms is located between the semiconductor layer and at least one of the first and second electrodes. The density of carbon atoms, nitrogen atoms, or carbon and nitrogen atoms in the zinc oxide layer is constant or continuously changed within the range of 5 atm % or less.

Abstract: A stowable and deployable concentrator for solar cells. A substrate mounts a row of solar cells. A row of Fresnel lens elements is mounted to the substrate so as to be deflectable toward the substrate in a stowed configuration and biased away from it in the deployed configuration. The Fresnel lens is linear and flexibly mounted in a shaper which shapes it to a proper curvature in the deployed configuration. A pair of these concentrators can be hinged together to form a conveniently stowed and readily deployed combination.

Abstract: A solar-cell module and a process for producing the same are disclosed. The solar-cell module comprising a solar-cell panel comprising a light-transmitting plate having a first surface and a second surface opposite to the first surface, and solar-cell elements disposed on the second surface; a frame disposed around the entire periphery of the solar-cell panel and having a flange on which the solar-cell panel is supported on the second surface while the first surface is free; and an adhesive layer disposed between the second surface of the solar-cell panel and the flange of the frame, wherein the adhesive layer comprises a reactive hot-melt adhesive comprising as a major component a urethane prepolymer obtained by reacting a polyhydroxy compound with an excess amount of a polyisocyanate compound. The solar-cell module can be produced easily and is excellent in quality and reliability.

Abstract: Provided is a method for controlling electrical properties and morphology of a p-type material of a photovoltaic device. The p-type material, such as p-type cadmium telluride, is first subjected to heat treatment in an oxidizing environment, followed by recrystallization in an environment substantially free of oxidants. In one embodiment, the heat treatment step comprises first subjecting the p-type material to an oxidizing atmosphere at a first temperature to getter impurities, followed by second subjecting the p-type material to an oxidizing atmosphere at a second temperature, higher than the first temperature, to develop a desired oxidation gradient through the p-type material.

Abstract: To produce a polycrystalline, single-phase compound semiconductor layer of the chalcopyrite type ABC.sub.2, it is proposed to deposit, on a substrate, a layer structure which comprises a plurality of layers and which contains the components in elemental form, as an interelemental compound or as an alloy, the component C being present in stoichiometric excess. In a rapid annealing process with a heating rate of at least 10.degree. C./s to a processing temperature of at least 350.degree. C., the layer structure is converted into the compound semiconductor ABC.sub.2 even after a few seconds, the gas exchange being limited by encapsulation of the layer structure, with the result that an evaporation of the most volatile components is prevented. Highly efficient solar cells can be produced from the semiconductor.

Abstract: A photovoltaic roofing shingle includes a strip of roofing material having an overlap portion, and a plurality of tab portions depending therefrom and separated by embossed inactive regions. Each of the tab portions includes a photovoltaic generating device affixed thereto. An encapsulating layer covers the top surface of each strip and wraps around the exposed and side edges. The photovoltaic devices are electrically interconnected, and each photovoltaic shingle member includes a hair of electrical terminals for delivering power from said photovoltaic devices. In use, the shingle members are affixed to a roof so that the tab portions of one row of shingles cover the overlap portion of an adjoining row. Electrical interconnection may be made through the roof to the inside of the building, or to a point atop the roof.

Abstract: A fiber optical solar power generating system provides a tower outside a structure to be supplied with solar energy and on which a multiplicity of collectors is provided. An optical fiber trunk carries the collected optical energy to the structure in which a photovoltaic and/or a light/heat transducing stack can be provided and to which light is distributed from the optical fiber trunk so that the transducers need not occupy large areas of the property.

Abstract: This invention provides an inexpensive polycrystalline silicon solar cell having a large grain size polycrystalline semiconductor layer grown on a low-cost metallurgical grade (MG) silicon substrate, and a process for its production. The polycrystalline silicon solar cell comprises a MG-silicon substrate, a metal oxide layer formed thereon and a polycrystalline silicon layer formed on the metal oxide layer. The process for producing the polycrystalline silicon solar cell comprises the steps of i) depositing the metal oxide layer on the MG-silicon substrate, ii) depositing a silicon layer on the surface of the metal oxide layer, iii) depositing a cap layer on the surface of the silicon layer and melting the silicon layer by heating from the upper part of the cap layer, followed by solidification to form a polycrystalline silicon layer, and iv) removing the cap layer and forming a semiconductor junction on the surface of the polycrystalline silicon layer.

Abstract: A solar power system including a thermal-storage tank installed in the ridge of the roof of a building, and a plurality of solar collector units covered over the roof and outside wall of the building and connected to the thermal-storage tank, wherein each solar collector unit comprises a transparent cover plate with photovoltaic cells for converting the radiant energy of sunlight into electric power, a rear mounting rail, a front mounting frame for engagement with the rear mounting rail of another solar collector unit, a heat-absorber plate having a collector tube connected to the thermal-storage tank, and a lateral mounting frame for connection to another solar collector unit over its heat-absorber plate by screws.

Abstract: A photovoltaic module comprises a photovoltaic panel having a top edge and a bottom edge. An exterior frame structure attached to edges of the photovoltaic panel defines an upwardly open groove extending along at least the top and bottom edges of the panel to direct rain water away from underside of the panel.

Abstract: A hydrogen passivated photovoltaic device such as a solar cell comprises a lattice mismatched substrate such as Ge or Si, and a hydrogen passivated heteroepitaxial layer such as InP grown on the substrate. The hydrogen passivated heteroepitaxial III-V photovoltaic device is produced by exposing a sample of a heteroepitaxial III-V material grown on a lattice-mismatched substrate to reactive hydrogen species at elevated temperatures. Reactive hydrogen forms bonds with dangling bonds along dislocations defined in the sample. The electrical activity in the dislocations is passivated as a result of the hydrogenation process.

Abstract: A plasma CVD method adapted to a roll-to-roll process or the like wherein the change rate of the temperature of the substrate before and after an i-type semiconductor layer is deposited is made rapid so as to prevent diffusion of impurities occurring due to annealing, by constituting the apparatus structure in such a manner that the deposited film is formed on an elongated substrate by the plasma CVD method while heating the elongated substrate moving in an i-layer forming discharge chamber at a rate of 4.degree. C./second or higher immediately in front of an inlet to the discharge chamber and cooling the same at a rate of 4.degree. C./second or higher immediately at the outlet of the discharge chamber so that a stacked-layer type photovoltaic device having a large area and free from scattering of the characteristics is continuously formed without deterioration of the characteristics occurring due to dopant diffusion.