Abstract: Method and apparatus for cooling a sputtering target is provided. The method comprises the steps of providing a sputtering target and a cooling surface in operable conductive heat transfer contact with the sputtering target, introducing a cooling liquid onto the cooling surface to conductively remove heat from the sputtering target, allowing at least a portion of the cooling liquid to change phase into a vapor, and preventing a continuous insulating vapor layer from forming on the cooling surface to ensure continuing conductive heat transfer from the target to the cooling surface so as to avoid overheating of the target.

Abstract: An optically enhanced back reflector for a photovoltaic device includes a back reflector layer of aluminum having a multi-layered, reflectivity enhancement member deposed thereon. The multi-layer enhancement member includes at least one pair of first and second layers, the first layer having a low index of refraction and the second layer having a high index of refraction. A layer of transmissive conductive oxide is disposed between the optically enhanced back reflector and the photovoltaic device.

Abstract: A plurality of first electrodes are sequentially arranged on a substrate and covered with a non-single-crystal semiconductor laminate member. On the semiconductor laminate member are formed second electrodes respectively corresponding to the first electrodes. Each first electrode and each second electrode and the region of the semiconductor laminate member sandwiched therebetween constitute one semiconductor photoelectric transducer. The transducer is connected to another transducer adjacent thereto so that the second electrode of the latter is connected to the first electrode of the former through a contact portion extending thereto from the second electrode of the latter into a contact groove cut in the semiconductor laminate member. In this case, the contact groove and the contact portion are not exposed in the side walls of the semiconductor laminate member. The side walls of the first and/or second electrode are retained inside the side walls of the substrate.

Abstract: A rotatable magnetron cathode having at least one supported end adapted for attachment to a spindle. At least one dark space shield is attached to the cathode at a supported end to rotate therewith, and is electrically floating relative to the cathode. If the cathode is cantilever mounted, a floating cone end shield, facing away from the gas discharge and not overlapping the cylindrical cathode wall, is used at the free end.

Abstract: A contact arrangement for permitting a plurality of solar cells to be electrically interconnected. The inventive device includes a solar cell having orthogonally oriented outer peripheral edges and oblique angled corner edges. A first pair of negative contacts is secured to a top surface of the cell proximal to a first adjacent pair of angled corner edges, and a second pair of negative contacts is secured to the cell proximal to a second adjacent pair of angled corner edges. A pair of positive contacts is secured to the top surface of the cell proximal to the second adjacent pair of angled corner edges and extends at least partially around the second pair of negative contacts. An elongated positive buss bar extends between the pair of positive contacts and along the top surface of the cell proximal to one of the outer peripheral edges.

Abstract: A target plate assembly completely covers and seals against a top opening of a sputtering processing chamber. Cooling liquid connections are provided only from the perimeter of the target assembly. When a top vacuum chamber seals the side opposite the pressure chamber, the pressure on both sides of the target assembly is nearly equalized. Large thin target assemblies, such as large flat plates used for flat panel displays can be sputtered effectively and uniformly without adverse sputtering effects due to target deflection or cooling deficiencies.A target, target backing plate, and cover plate form the target plate assembly. The sputtering target assembly includes an integral cooling passage. A series of grooves are constructed in either the target backing plate or the target backing cooling cover plate, which are then securely bonded to one another.

Abstract: A plasma reactor for processing a semiconductor substrate within a reactor chamber with a process gas from which a plasma has been formed in the chamber by electromagnetic excitation includes a sputter target in the chamber and overlying the wafer, the sputter target having additive material for the plasma, and a sputter excitation electrode overlying the target surface, the sputter excitation electrode having plural conductive segments separated by apertures therebetween, selected ones of the plural conductive segments being excited by an RF signal of a given phase and other of said plural conductive segments being excited by an RF signal of a different phase. Preferably, alternate segments are excited by RF signals of opposite phase, so that RF power radiated by alternate ones of the conductive segments is balanced by the RF power radiated by the remaining ones of the conductive segments. Preferably, segments excited by one phase are insulated from segments excited by the other phase.

Abstract: A non-monocrystalline silicon semiconductor device having a pin junction is formed by forming a first doped semiconductor layer of a first conductivity disposed on a substrate. A first intrinsic layer is deposited on the first doped semiconductor layer employing RF energy. A second intrinsic layer is deposited on the first intrinsic layer employing microwave energy and RF energy simultaneously. A semiconductor precursor gas, including germanium and a semiconductor precursor gas including silicon are supplied to the second intrinsic layer during its formation. The content of the semiconductor precursor gas containing germanium is greater than the semiconductor gas including silicon in the layer thickness direction in the second intrinsic layer at a P-layer side. A second doped semiconductor layer is deposited on the second intrinsic layer.

Abstract: A photovoltaic cell comprising a plurality of film layers, at least one of the layers being a semiconductor film of amorphous, hydrogenated carbon. The preferred embodiment comprises a plurality of semiconductor films sandwiched together in layers, every three layers forming a PIN junction. All films are made of amorphous, hydrogenated carbon and vary only by dopant levels within each PIN junction. There are variations in bandgap from one PIN junction to the next in order that the photovoltaic effect in each PIN junction will be caused by a different portion of the spectrum of light.

Abstract: A thermophotovoltaic generator for use in generating electricity using a or liquid fueled light emitter and an absorber with photocells, is provided. This generator includes a burner and mantle light emitter, and includes a multi-layer absorber having cylindrical layers of peripherally spaced tube units, each unit having end wall photocells which form a chamber that contains a dye.

Abstract: A solar module has a thin-film structure applied on an aluminum substrate, with the back electrode insulated from the electrically conductive aluminum substrate by an electrically insulating oxide layer. The aluminum substrate can be an aluminum facade element or can be joined to an aluminum facade element. For producing the insulating oxide layer, a known method for the manufacture of electrically conductive oxide electrodes composed of zinc oxide is utilized in a form modified to produce the solar module.

Abstract: A coating system has, in a housing (1), a sputtering chamber (3) for the coating of a substrate (22) and a target carrier coating chamber (4) for the continuous coating of a rotating target carrier (2) with a coating of target material (25), which projects into both chambers (3, 4). The surface of the carrier which has been coated in the target carrier coating chamber (4) passes continuously through the sputtering chamber (3). The previously produced coating forms the target for the sputtering process in the sputtering chamber (3).

Abstract: A PVD sputter system having a nonplanar target surface is disclosed. The configuration of the nonplanar target surface is adjusted to provide improved uniformity in deposition film thickness and step coverage at the peripheral boundary regions of the substrate. Emission-inducing power is distributed independently to different portions of the nonplanar target surface so as to modify the deposition profile according to substrate size and other factors.

Abstract: A method of manufacturing a semiconductor device having a non-single crystalline semiconductor layer including an intrinsic silicon which contains hydrogen or halogen and is formed on a substrate by a vapor phase reaction in a reaction chamber which may have a substrate holder. Sodium is removed from the inside of the reaction chamber and/or the surface of the substrate holder by using a chlorine containing gas at a sufficiently high temperature such as 1150.degree. C. in order to remove sodium therefrom so that the concentration of sodium in the semiconductor layer is preferably 5.times.10.sup.18 atoms/cm.sup.3 or less.

Abstract: A light directing element for a photovoltaic device and method of manufacture. The light directing element is in the form of an encapsulating cover which fits onto the top of the underlying photovoltaic cell. A bottom surface of the encapsulating cover is provided with V-shaped grooves which are in registry with the underlying grid lines of the photovoltaic cell. Preferably, the side walls of the grooves are coated with a reflective coating. Incident light, falling on the reflective side walls will be reflected onto adjacent portions of the photovoltaic cell, thereby minimizing shading effects caused by the grid lines. In a particularly preferred embodiment, each groove in the cover is filled with a conductive carbon paste, and conductive wires are embedded therein. This conductive wires serve as the current collecting network of the solar cell and are in electrical communication with the top electrode thereof by means of the conductive carbon paste.

Abstract: Compact solar energy collector that incorporates into the same housing the collector itself and an accumulator in the shape of a parallelepiped and divided by walls to better withstand water pressure, being then complemented with the remaining conventional elements such as pump, differential thermostat, purges and valves, the housing being fitted with a transparent cover (3) and a heat exchanger inside (13) that is connected to the pump (1) and to the collector (6) and at the other end to valve (11) and lip (10), the rest of the interior of the housing containing insulating material. The water pumping rate is controlled by supplying the pump (1) with electrical power generated by a photovoltaic panel (2) in proportion to the intensity of available sunlight.

Abstract: A thermophotovoltaic generator includes a stainless steel heat exchanger, a ceramic heat exchanger, a mixing chamber, a combustion chamber, an igniter, an infrared radiation emitter with counterflow, and an array of thermophotovoltaic cells surrounding the emitter and tube. The generator possesses both high conductance for the combustion gases and efficient heat transfer from the hot combustion gases to the emitter. The thermophotovoltaic cells have an IR response at least out to 1.7 microns and are fitted with simple dielectric filters. The emitter is an SiC spine disc emitter that is surrounded by at least one fused silica heat shield. Preferably, the thermophotovoltaic cells are GaSb cells, the infrared radiation emitter is a SiC blackbody emitter, and the dielectric filter is designed to transmit for wavelengths less than 1.7 microns and to reflect wavelengths between 1.7 and 4.0 microns. The filter can transmit again beyond 4.

Abstract: A photovoltaic generator device for producing an output sufficient to turn on a MOS-gated device consists of a plurality of planar photogenerators connected in series. Each of the photovoltaic generators is contained on its own respective insulated tub. The insulated tubs are formed by wafer bonding a junction-containing wafer to a handle wafer with a dielectric isolation layer between them. The individual tubs are formed at their sides by isolation trenches which enclose each tub and which extend to the dielectric layer between the junction-containing and handle wafers. Each tub is formed of an N.sup.- body having a shallow P.sup.+ diffusion. N.sup.+ contact regions are formed in the N.sup.- body and contact strips connect the devices of each of the tubs in series by connecting the P.sup.+ diffusions of one tub to the N.sup.+ contact of an adjacent tub.

Abstract: In a photovoltaic device, when an internal electric field in a photoelectric conversion layer becomes non-uniform in the surface direction of the layer for a reason such as the interface between a transparent conductive film and the photoelectric conversion layer being formed in an irregular shape, the internal electric field in the photoelectric conversion layer is made uniform by (1) making the thickness of an intrinsic layer inside the photoelectric conversion layer in portions of the photoelectric conversion layer where the internal electric field becomes weak smaller than that in the other portions, (2) providing regions where conductivity is high and activation energy is low in the photoelectric conversion layer in the said portions, or (3) containing a ferroelectric material in a portion of the intrinsic layer inside the photoelectric conversion layer.

Abstract: A substrate structure for manufacturing series interconnected photovoltaic cells comprises repetitive sheets of electrically conductive polymer resin joined by first narrow strips of insulating material. A second narrow dividing strip of insulating material is positioned on the top surface of each electrically conductive sheet extending essentially parallel with but slightly displaced from the joining strips. The second strip divides the top surface of each conductive sheet into a connector area and a collector area. The connector area is positioned between the first and second insulating strips. After deposition of a thin film photovoltaic cell onto the collector area, series interconnection is made by establishing electrical communication between the top surface of the photovoltaic film and the connector area of an adjacent sheet. Electrodeposits on surface portions of the electrically conductive sheets assist in current distribution with minimum power losses.