Abstract: The invention concerns the use of materials which exhibit photonic band gaps in the near infrared and visible regions of the optical spectrum as thermophotovoltaic emitter materials.The materials used according to the invention are particularly suitable for use in the conversion of thermal or heat energy into optical or light energy. U.S. Pat. No. 5,385,114, PHOTONIC BAND GAP MATERIALS AND METHOD OF PREPARATION THEREOF, was issued on Jan. 31, 1995 to the present inventors for a class of material which can be employed according to the present invention.According to the invention it is possible to employ these materials in the conversion of thermal energy to optical energy, in particular as a thermophotovoltaic emitter material, when the thermal energy is supplied by sources such as flames, sunlight or other broadband electromagnetic sources, or hot gases or fluids.

Abstract: The present invention provides photoelectric conversion elements, wherein the long wavelength sensitivity, the fill factor, and the photoelectric conversion efficiency are improved. In order to provide photoelectric conversion elements wherein light deterioration is reduced, the field durability enhanced, and the temperature characteristic improved, a p-layer composed of amorphous silicon type semiconductor containing hydrogen, an i-layer composed of amorphous silicon-germanium type semiconductor containing hydrogen and further including microcrystalline germanium, and an n-layer composed of amorphous silicon type semiconductor containing hydrogen are laminated on a substrate, the i-layer being formed at a substrate temperature from 400.degree. to 600.degree. C. by microwave plasma CVD, the particle diameter of said microcrystalline germanium ranging from 50 to 500 angstroms. Also, the content of microcrystalline germanium varies in the layer thickness direction.

Abstract: A magnetron sputtering cathode assembly provides an annular target of sputtering material located with a sputtering surface facing a substrate to be sputtered. An inner magnet and an outer ring magnet are positioned adjacent inner and outer edges of the sputtering surface. The outer ring magnet is oriented so that its North-to-South magnetic orientation is substantially parallel to the plane defined by the sputtering surface while the inner magnet is oriented so that its North-to-South magnetic orientation is substantially perpendicular to the plane defined by the sputtering surface. A pair of walls extend at the inner and outer edges of the annular target away from the sputtering surface and toward the substrate. The walls and the magnets define a closed-loop array of radial magnetic lines having improved target erosion and plasma-containing characteristics.

Abstract: A method for forming an alloy film by cooling a substrate during a sputter deposition process. In one embodiment, aluminum-copper (Al-Cu) alloy film is deposited on a substrate while the substrate is maintained at a temperature lower than 100.degree. C. during a sputter deposition process, thereby reducing the precipitation of CuAl.sub.2. The substrate is cooled by pumping a coolant gas through a cooled platen and against the substrate during processing. Subsequent film formation prior to etching is also performed below 100.degree. C. to prevent precipitation of CuAl.sub.2 until the Al-Cu alloy film is etched. Large crystal grains are formed by annealing the substrate after etching.

Abstract: The object is to provide a light-transmissive resin sealed semiconductor that is excellent in weatherability, heat resistance and fire retardancy, limits the performance deterioration of a photovoltaic element for a long term due to moisture permeation to an minimum extent, has rubber elasticity necessary for protecting the semiconductor element, and has a surface covering material that is incombustible or fire retardant. This object is achieved by a construction wherein a covering material provided on the surface of the incident light side of photovoltaic element (101), comprises a transparent filler (102) that is cross-linked multi-component copolymer containing vinylidene fluoride and hexafluoropropylene as the major components.

Abstract: A semiconductor substrate material having a photovoltaic cell, a semiconductor substrate material having an integrated array of at least two photovoltaic cells in electrical series with one another, systems for the production of electricity and method for the production of electricity are disclosed. In the semiconductor substrate material (301) having a photovoltaic cell (303, 304), the photovoltaic cell comprises at least one first type groove (305, 306, 307) having walls doped with a first type dopant (308), the first type groove having a first conducting material in conducting electrical contact with the first type doped walls and at least one second type groove (310, 311, 312) having walls doped with a second type dopant, the second type groove having a second conducting material in conducting electrical contact with the second type doped walls.

Abstract: A miniature thermo-photovoltaic (TPV) device for generation of electrical power for use in portable electronic devices. A TPV power source is constructed to provide a heat source chemical reactor capable of using various fuels, such as liquid hydrocarbons, including but not limited to propane, LPG, butane, alcohols, oils and diesel fuels to generate a source of photons. A reflector dish guides misdirected photon energy from the photon source toward a photovoltaic array. A thin transparent protector sheet is disposed between the photon source and the array to reflect back thermal energy that cannot be converted to electricity, and protect the array from thermal damage. A microlens disposed between the protector sheet and the array further focuses the tailored band of photon energy from the photon source onto an array of photovoltaic cells, whereby the photon energy is converted to electrical power.

Abstract: An apparatus to releasably affix a rotating cylindrical magnetron target to a spindle utilizes a threaded spindle collar engaging threads on the outside surface of the target, with a single water-to-vacuum seal located at the target and spindle interface. The threads may be removable from the target, enabling efficient assembly/disassembly and recycling.

Abstract: An apparatus for localized ion sputtering consists of a vacuum chamber, an anode and cathode disposed in spaced relation in the vacuum chamber, a power supply for generating an electric field between the anode and cathode, and a means for directing a stream of plasma forming gas tangent to a target surface of the cathode. The anode has a first surface which is disposed in facing relation to the target surface of the cathode and further has an opposing second surface. The electric field which is generated between the anode and cathode has lines of force which extend generally perpendicular to the target surface of the cathode. In operation, the plasma forming gas is ionized adjacent to the target surface of the cathode by the electric field wherein the ions bombard the target surface of the cathode to strip away particles of cathode material. The particles are deposited onto a substrate which is positioned adjacent to the second surface of the anode.

Abstract: A photovoltaic module that serves as a shingle, tile or other building material that may be placed onto the exterior of a structure. The photovoltaic module generates a voltage when exposed to light and this voltage may be directed onto transmission lines of a power utility and/or into an external battery that may serve as a source of power for the building on which the photovoltaic shingles are laid. The practice of the present invention provides for a variety of mechanical and electrical connectors for securing together the photovoltaic modules and/or for connecting the photovoltaic modules to the exterior structure. Furthermore, the structure of the modules is such that the modules are automatically electrically connected together when laid on the building.

Abstract: A solar cell module in which the reduction in conversion efficiency is small, and a passive solar heating system using the solar cell module. The solar cell module has a solar cell covered with a filler. A back reinforcement member, the filler and a back insulating member larger than the solar cell are superposed on the non-light-receiving side of the solar cell. The back insulating member has openings corresponding to pierced portions of the solar cell module at which the solar cell module is affixed to a roof. A greater amount of clean energy is obtained with the system. The solar cell is used without any additional base to limit the reduction in the conversion efficiency of the solar cell.

Abstract: A photovoltaic cell (10) having a semiconductor substrate (11), a front passivation layer (12) arranged on the substrate, an emitter layer (14) having a first conductivity type (p or n), a front transparent conductive layer (15), a rear passivation layer (17) deposited on a rear surface of the substrate, a rear layer (18) producing a back surface field having a second conductivity type (n or p) opposite to the first conductivity type, as well as a reflecting element (19) comprised of a transparent conductive layer (20), an adhesion layer (21), and a reflecting layer (22). The disclosed cell has a substantially high efficiency a substantially low fabrication cost and is used in solar cells.

Abstract: A photovoltaic device comprises a metal with a smooth surface; a transparent conductive layer formed on the smooth surface; and a photoelectric conversion layer formed on the transparent conductive layer. The transparent conductive layer has an irregular surface at a side opposite to the smooth surface.

Abstract: A photovoltaic element comprises a first non-monocrystalline silicon-containing semiconductor layer of a first-conductivity type, a first i-type non-monocrystalline silicon-containing semiconductor layer formed by microwave plasma CVD, a second i-type non-monocrystalline silicon-containing semiconductor layer formed by high-frequency plasma CVD, and a second non-monocrystalline silicon-containing semiconductor layer of a conductivity type opposite to the first-conductivity type, wherein the second semiconductor layer is formed by plasma doping.

Abstract: A plasma processing system for sputter etching a substrate with reduced particle contamination comprises a plasma processing chamber having an interior surface which defines a processing space containing a substrate. An electrical element couples electrical energy into a portion of the processing space to generate a plasma therein for etching the substrate. A heating device is coupled to the reactor and is operable for controllably heating the processing chamber interior surface to a selected temperature. The heating device is controlled by a temperature control circuit which turns the heating device to an ON state and operates the heating device to heat the processing chamber to a selected temperature when the electrical element is not coupling energy to the processing chamber and the plasma is extinguished.

Abstract: Thin-film photoelectric conversion elements are spaced from each other on an insulating belt-like film. Respective conductive tapes are soldered to the terminal electrodes at the two edges of the film. The conductive tape is in contact with non-adhesive resin in gap portions between the photoelectric conversion elements. For forming a module, the assembly can be cut at these portions, followed by removal of the non-adhesive resin to expose the conductive tape for external connection of the module.

Abstract: A processing apparatus wherein a collimator which restricts sputtering directions of sputtered particles from a target comprises a plurality of slats arranged substantially parallel with each other. The respective slats constitute a louver mechanism in which rotatable rods are rotated to replace the side thereof facing the target and the side thereof facing the object-to-be-processed with each other. Because of the louver mechanism, the portion of the interior of a processing vessel belonging to the target and the portion thereof belonging to the object-to-be processed can be closed off from each other, and a side of the collimator facing the target and a side thereof facing the object-to-be-processed can be replaced with each other. As a result, the collimator has also a shutter function, and can suppress generation of particles.

Abstract: A dc sputtering process applies a pulsating dc voltage in which each cycle includes a pulse portion of negative dc voltage of -300 to -700 volts alternating with a reverse bias (positive) pulse of about +50 to +300 volts. The reverse bias pulse portion will reduce or eliminate sources for arcing in most cases. To combat sticky or persistent arcing, the negative pulse portion is monitored. If, during a window portion of the negative pulse portion, the applied voltage drops into a range characteristic of arcing for two successive cycles, then the applied power is interrupted for a period, e.g., 200 microseconds, and reverse bias is applied. An overvoltage detection and clamping circuit monitors the applied voltage for extreme voltage excursions, and if an overvoltage threshold is exceeded for two successive cycles, the applied power is interrupted. The overvoltage detection and clamping circuit can comprise a string of zener diodes or equivalent voltage limiting devices connected to the applied voltage.

Abstract: In order to provide a low cost solar cell which has a high quality, little stressed polycrystalline silicon semiconductor layer of large crystal sizes on a low cost metal substrate and to provide a production process therefor, the solar cell has a metal layer, a metal oxide layer, and a polycrystalline silicon semiconductor layer formed in this order on the substrate, and the production process therefor comprises a step of depositing the metal layer on the substrate, a step of depositing the metal oxide layer on the metal layer, a step of depositing the semiconductor layer on the metal oxide layer, a step of depositing a cap layer on the surface of the semiconductor layer and fusing and solidifying the semiconductor layer by radiant heating from above the cap layer to form the polycrystalline semiconductor layer, and a step of removing the cap layer.

Abstract: A solar cell module and an installation method thereof are disclosed. The solar cell module comprises an active solar cell element and a filler holding element disposed on said active solar cell element, said active solar cell element and said filler holding element being encapsulated with a filler between a transparent film and a reinforcing member, the solar cell module being characterized in that the reinforcing member, the filler, and the transparent film are bent in the direction opposite to the surface to be illuminated with the sunlight, wherein there is no filler holding element at least in the bent portion. The solar cell module arrangement in the above-described manner can be installed without degradation in conversion efficiency of the solar cell module. Furthermore, the total weight and total size including installation materials are very small.