Abstract: A memory device includes a first plurality of volatile memories, a non-volatile memory, and a controller coupled to the non-volatile memory and including a first controller output. The memory device further includes a registering clock driver (RCD) including a first RCD output, and a first multiplexer including a first mux input coupled to the first RCD output, a second mux input coupled to the first controller output, and a first mux output coupled to the first plurality of volatile memories. The first multiplexer can be configured to provide command/address signals from one of the RCD and the controller to the first plurality of volatile memories.

Abstract: Methods, systems, and devices for clock locking for frame-based communications of memory devices are described. A memory system may include a memory device and a host device. The memory device may receive one or more frames of data from the host device, the one or more frames of data communicated by the host device using a first frame clock. The memory device may generate a second frame clock aligned with the one or more frames on receiving the one or more frames and align one or more operations of the memory device with the second frame clock. In some examples, the host device may receive a second set of frames from the memory device based on transmitting the first set of frames. The host device may align one or more operations of the host device with the second set of frames received from the memory device.

Abstract: A compute-in-memory array is provided that includes a set of compute-in-memory bitcells that time share a shared capacitor connected between the set of compute-in-memory bitcells and a read bit line.

Abstract: A memory device is described. The memory device comprises a plurality of stacked memory layers, wherein each of the plurality of stacked memory layers comprises a plurality of memory cells. The memory device further comprises an optical die bonded to the plurality of stacked memory layers and in electrical communication with the stacked memory layers through one or more interconnects. The optical die comprises an optical transceiver, and a memory controller configured to control read and/or write operations of the stacked memory layers. The optical die may be positioned at one end of the plurality of stacked memory layers. The one or more interconnects may comprise one or more through silicon vias (TSV). The plurality of memory cells may comprise a plurality of solid state memory cells. The memory devices described herein can enable all-to-all, point-to-multipoint and ring architectures for connecting logic units with memory devices.

Abstract: A semiconductor storage device of embodiments is a semiconductor storage device including a memory cell array including a plurality of non-volatile memory cells, a sequencer configured to control a sequence based on read operation of reading data from the memory cell array, and a column decoder, the sequencer controlling the sequence of changing a ready/busy signal from ready to busy after receiving a read command and an address signal, reading data from the memory cell array using a sense amplifier after changing the ready/busy signal to the busy, changing the ready/busy signal from the busy to the ready after storing data in the data latch circuit, receiving a data output command after changing the ready/busy signal to the ready, and, in a case where a first condition occurs, writing log data including the data stored in the data latch circuit in a memory area of the memory cell array.

Abstract: A memory device includes a first electrode, a second electrode that is spaced from the first electrode, a fixed vertical magnetization structure configured to generate a fixed vertical magnetic field and located between the first electrode and the second electrode, at least one layer stack located between the fixed magnetization structure and the second electrode and containing respective spacer dielectric layer and a respective additional reference layer including a respective ferromagnetic material having perpendicular magnetic anisotropy, and a magnetic tunnel junction located between the at least one layer stack and the second electrode, the magnetic tunnel junction containing a reference layer, a free layer, and a nonmagnetic tunnel barrier layer located between the reference layer and the free layer, and the reference layer being more proximal to the at least one layer stack than the free layer is to the at least one layer stack.

Abstract: According to one embodiment, a semiconductor memory device includes: a memory cell configured to hold 5-bit data; a word line coupled to the memory cell; and a row decoder configured to apply first to 31st voltages to the word line. A first bit of the 5-bit data is established by reading operations using first to sixth voltages. A second bit of the 5-bit data is established by reading operations using seventh to twelfth voltages. A third bit of the 5-bit data is established by reading operations using thirteenth to eighteenth voltages. A fourth bit of the 5-bit data is established by reading operations using nineteenth to 25th voltages. A fifth bit of the 5-bit data is established by reading operations using 26th to 31st voltages.

Abstract: The present disclosure includes apparatuses and methods related to determining an XOR value in memory. An example method can include performing a NAND operation on a data value stored in a first memory cell and a data value stored in a second memory cell. The method can include performing an OR operation on the data values stored in the first and second memory cells. The method can include performing an AND operation on the result of the NAND operation and a result of the OR operation without transferring data from the memory array via an input/output (I/O) line.

Abstract: Systems, devices, and methods related to a Deep Learning Accelerator and memory are described. An integrated circuit may be configured to execute instructions with matrix operands and configured with: random access memory configured to store instructions executable by the Deep Learning Accelerator and store matrices of an Artificial Neural Network; a connection between the random access memory and the Deep Learning Accelerator; a first interface to a memory controller of a Central Processing Unit; and a second interface to an image generator, such as a camera. While the Deep Learning Accelerator is using the random access memory to process current input to the Artificial Neural Network in generating current output from the Artificial Neural Network, the Deep Learning Accelerator may concurrently load next input from the camera into the random access memory; and at the same time, the Central Processing Unit may concurrently retrieve prior output from the random access memory.

Abstract: Numerous embodiments of analog neural memory arrays are disclosed. In certain embodiments, each memory cell in the array has an approximately constant source impedance when that cell is being operated. In certain embodiments, power consumption is substantially constant from bit line to bit line within the array when cells are being read. In certain embodiments, weight mapping is performed adaptively for optimal performance in power and noise.

Abstract: The disclosed embodiments provide neural network inference accelerator based on one-time-programmable (OTP) memory arrays with one-way selectors. In some embodiments, a memory array may comprise: a plurality of one-time-programmable memory cells each comprising: a one-time-programmable memory element; a top electrode having an upper surface in contact with the one-time-programmable memory element; a dielectric layer in contact with a lower surface of the top electrode; a bottom electrode; and a dense layer having an upper surface in contact with the dielectric layer, and a lower surface in contact with the bottom electrode, wherein the dense layer comprises Al2O3 or MgO.

Abstract: An information handling system may include a memory comprising a plurality of memory modules, each memory module comprising a plurality of memory chips, a host system comprising a host system processor configured to, during a boot of the information handling system, execute a basic input/output system of the information handling system configured to monitor for one or more faults of one or more memory modules of the plurality of memory modules, and control circuitry. The control circuitry may be configured to, in response to the one or more faults, determine if, all of one or more memory modules associated with a power control signal of such one or more memory modules have experienced faults, and if all of the one or more memory modules associated with the power control signal have experienced faults, de-assert the power control signal such that the one or more memory modules are de-energized.

Abstract: Memory cell circuitry is disclosed. The memory cell circuitry includes a first transistor configured to have a threshold voltage of the first transistor modulated by hot carrier injection, a second transistor coupled to the first transistor and configured to have a threshold voltage of the second transistor modulated by hot carrier injection, a word line coupled to a gate of the first transistor and to a gate of the second transistor, a first bit line coupled to the first transistor and a second bit line coupled to the second transistor. In addition, the memory cell circuitry includes a source line coupled to the drain of the first transistor and to the drain of the second transistor, the word line and the source line configured to cause hot carrier injection (HCI) into the first transistor when a first supply voltage is applied to the word line and the source line, and the second bit line is floated and the first bit line is grounded.

Abstract: A system for scalable, fault-tolerant photonic quantum computing includes multiple optical circuits, multiple photon number resolving detectors (PNRs), a multiplexer, and an integrated circuit (IC). During operation, the optical circuits generate output states via Gaussian Boson sampling (GBS), and the PNRs generate qubit clusters based on the output states. The multiplexer multiplexes the qubit clusters and replaces empty modes with squeezed vacuum states, to generate multiple hybrid resource states. The IC stitches together the hybrid resource states into a higher-dimensional cluster state that includes states for fault-tolerant quantum computation.

Abstract: A shared data transfer clock is used among double data rate memory ranks. A memory controller processes incoming memory access commands destined for at least one of a plurality of double data rate memory ranks and determines when a target DDR memory rank is out of synchronization with respect to the shared data transfer clock and a memory clock. In response to determining that the target DDR memory rank is out of synchronization, the memory controller determines whether the non-target DDR memory rank is out-of-synchronization with respect to the shared data transfer clock and the memory clock, and issues a data transfer clock synchronization command to the target DDR memory rank in response to determining that the non-target DDR memory rank is out-of-synchronization with respect to the shared data transfer clock and the memory clock.

Abstract: A memory bit cell includes a first memory cell including a first antifuse transistor and a first selection transistor, the first antifuse transistor being selectable between a first state or a second state in response to a word line program signal, the first selection transistor being configured to provide access to the first antifuse transistor in response to a word line read signal; a second memory cell including a second antifuse transistor and a second selection transistor, the second antifuse transistor being selectable between the first state or the second state in response to the word line program signal, the second selection transistor being configured to provide access to the second antifuse transistor in response to the word line read signal; a first word line to selectively provide the word line program signal; a second word line to selectively provide the word line read signal; and a bit line.

Abstract: A memory apparatus may include at least one memory, and a memory controller configured to receive an address signal and a command through shared pins and store data, provided from an external source, within the memory controller when a write command is inputted without the address signal.

Abstract: A data erasing method of a non-volatile memory and a storage device using the same are provided. The data erasing method of the non-volatile memory includes the following steps. A boost circuit is boosted to output a damage voltage. A switch is turned on to apply the damage voltage to the non-volatile memory. The switch is connected between the boost circuit and the non-volatile memory. The non-volatile memory is destroyed by the damage voltage.

Abstract: Disclosed are a first memory cell, a second memory cell, and an amplification circuit. The first memory cell outputs a first voltage through a first bit line or a second voltage through a second bit line, based on first input data received through a first word line and a second word line and a first weight. The second memory cell outputs a third voltage through the first bit line or a fourth voltage through the second bit line, based on second input data received through a third word line and a fourth word line and a second weight. The amplification circuit generates an output voltage having a level corresponding to a sum of a level of a voltage received through the first bit line and a level of a voltage received through the second bit line.

Abstract: Methods, systems, and devices for performing safety event detection for a memory device are described. For example, a memory array of a memory device may operate in a first mode of operation (e.g., a normal mode of operation). An event associated with a reduction of data integrity for the memory array may be detected. In some cases, the event may be associated with a temperature of the memory device, a voltage level detected at the memory device, an error event at the memory device, or the like. Based on the detected event, it may be determined whether to adjust the operation of the memory device to a second mode of operation (e.g., a safe mode of operation). The second mode of operation may correspond to a mode of operation that increases data retention characteristics.