Abstract: A triac device includes a first silicon chip having regions of alternate conductivity type disposed in a PN-junction forming relationship which defines a center-fired triac. A second silicon chip having regions defining a diac is bonded to the gate region of the triac chip. A copper layer of about 1 to 5 mils in thickness is bonded to the portions of the top major face of the triac chip that surround the gate region. Cathode, anode and gate connections are provided to the two-chip subassembly which is then encapsulated. The copper layer permits a smaller cathode connection to be made to the top of the triac chip without reducing the current capacity of the device.The triac device is mass-produced by first forming a plurality of triac chips in a two-dimensional array in a large area silicon wafer. The copper layers and diac chips are formed on the wafer prior to its separation into separate diac-triac chip subassemblies.

Abstract: An epitaxial layer of a narrow-gap semiconductor is deposited on a substrate comprising a wider-gap semiconductor. The opposite surface of the substrate is then illuminated with light pulses at a wavelength corresponding to the desired bandgap of the resulting material. Each pulse causes localized heating where it first encounters a material having a sufficiently narrow bandgap to be an absorber at the wavelength of illumination. This localized heating will then cause interdiffusion, producing a layer of semiconductor alloy having a bandgap intermediate between the bandgaps of the two starting materials. Repetition of this step will have the effect of moving the region of localized absorption away from the original location, and toward the film/air interface. Since the desired end product composition will be transparent to the illumination applied, the process is inherently self-limiting.

Abstract: A reverberatory furnace includes a reverberatory furnace body for melting metal and holding molten metal, having an opening well, an electromagnetic trough for transporting hot molten metal from the reverberatory furnace body upwardly and slantly, having an inductor for generating a travelling magnetic field, and a guide trough for guiding the hot molten metal from the electromagnetic trough to the opening well. The hot molten metal is circulated through the reverberatory furnace.

Abstract: A substrate and method of manufacture wherein a substrate is molded from particulate material wherein grooves on and through the body are formed during substrate molding and prior to sintering. The substrate includes all buss structure molded therein. Cooling of chips is provided by providing a heat sink in an aperture formed within a substrate and beneath the chips.

Abstract: A HgCdTe film is produced on a CdTe substrate, by depositing HgTe on a CdTe substrate, and then illuminating the substrate from the underside with infrared light at a wavelength longer than the desired operating wavelength (band-gap-equivalent wavelength) of the device. Since CdTe is transparent in the infrared, the light will reach the HgTe/CdTe interface. Since HgTe is an absorber in the infrared, most of the infrared radiation will be absorbed near the interface, which will cause intense localized heating and thus accelerate the interdiffusion of HgTe and CdTe. This interdiffusion will have the effect of moving the interface away from the original location, and toward the film/air interface. Since the desired end-product HgCdTe composition will be transparent to the infrared radiation applied, the process is inherently self-limiting.

Abstract: An improved sheet steel suitable for the production of containers and the like has a thin composite coating of nickel and zinc plated on both sides thereof. The steel substrate may be flat rolled blackplate and the composite nickel-zinc coating may be plated thereon by drawing a running length or strip of the steel through a nickel electroplating bath to which has been added the necessary concentration of zinc, and electrodepositing the two coating metals simultaneously and in the desired proportions. The coated steel sheet is particularly useful in forming drawn and ironed cans although it may be used for other purposes.

Abstract: An oxide passivated mesa epitaxial diode with an integral heat sink, and a process by which it may be fabricated. The passivation layer of highly pure thermally grown SiO.sub.2 is formed over the mesa walls in the region of the pn junction without causing a reaction between the contact metals and their surroundings during the high temperature environment imposed during thermal growth. The heat sink is deposited after the SiO.sub.2 passivation has been grown, replacing a polycrystalline silicon layer beneath the mesa formation which was used as a temporary structural support. Dopant, to form the pn junction, is introduced into the silicon wafer after the formation of the passivation layer but before the heat sink is deposited.

Abstract: Apparatus for heat treatment of metal pieces such as billets, ingots, bars and the like, by pre-heating using hot gas impingement in a pre-heating furnace, and then transference into a holding furnace using forced hot air circulation where the metal pieces are held for the time required at the desired heat treatment temperature.

Abstract: A cupel for the fire assaying of ore samples is provided having an improved configuration comprising a primary hemispherical cavity within which is disposed a secondary hemispherical cavity. The secondary cavity has a radius of curvature no greater than one half that of the primary cavity, and extends in a downward direction beyond the lowest extreme of the primary cavity. A transverse lip serves as an upper ridge for the secondary cavity.

Abstract: A semiconductor memory device is provided comprised of an integrated array of cells formed on a substrate in conjunction with parallel spaced-apart bit lines and conductive word lines that are perpendicular to the bit lines. A plurality of V-shaped recesses are located between and extend perpendicular to adjacent parallel bit lines. Two cells share each recess and each cell includes a VMOS transistor formed by one end portion of the recess and an isolated buried source region located under the adjacent bit line. A channel stop region is located between and isolates the VMOS transistors and their respective buried source regions at opposite ends of each recess. Thus, the VMOS pass gate is shared between adjacent bit lines and bit line capacitance is minimized. Also, the VMOS pass gates are self-aligned to eliminate alignment tolerances and minimize bit line capacitance. The invention also includes an efficient method for producing a semiconductor memory device with such an array of cells.

Abstract: A nickel-base alloy, particularly suitable for high temperature molten glass environments, and articles manufactured from the alloy, preferably by casting, are disclosed.

Abstract: A tantalum capacitor comprising a cylindrical body and an axial tantalum anode wire. This wire is first folded and then soldered to an anode connection wire roughly parallel to a cathode connection wire which is itself soldered to the body of this capacitor. The connection wires include preferably a double right-angled section so that the distance between the outward portions of this wire correspond to predetermined standards.

Abstract: A furnace system for smelting ore concentrate and the like which includes a furnace housing provided with wall means which divide the housing into a smelting shaft, an exhaust gas shaft and a settling hearth. The settling hearth and the smelting shaft are separated by a partition wall preventing gaseous interaction therebetween but permitting liquid flow therebetween. In accordance with the invention, the partition wall between the exhaust gas shaft and the smelting shaft, as well as the wall between the settling hearth and the smelting shaft and exhaust gas shaft comprises a supporting frame on which there are a plurality of interengaged cooling elements which are releasably secured to the supporting frame and are provided with means for circulating a coolant therethrough.

Abstract: A shielded pressure probe for measuring the pressure within a metallurgical vessel includes a tubular housing extending through and spaced from an opening in the vessel's refractory lining. The housing has an opening at its external end for receiving a probe therein and its interior end is closed. A plurality of perforations are formed in the housing and open toward the refractory defining the vessel opening to expose the probe to the vessel's interior while eliminating any straight line paths therebetween.

Abstract: The invention is concerned with an improved method of producing a one-transistor cell for a dynamic RAM having a capacitor plate, a transfer gate and a shallow n.sup.+ -type region and a deeper p.sup.+ -type region for a junction capacitance. After formation of a thin oxide layer of a dielectric for an MOS capacitance, a patterned photo resist layer is formed. Using the photo resist layer as a mask, n-type impurities are doped into a semiconductor substrate. The capacitor plate and a masking layer are deposited on the photo resist layer and the thin oxide layer. P-type impurities are doped into the capacitor plate. Then, portions of the capacitor plate and masking layer on the photo resist layer are removed by removing the photo resist layer. An end portion of the capacitor plate is removed from under an edge of the remaining masking layer by etching. The p-type impurities are diffused into the silicon substrate by heating to form the deeper p.sup.+ -type region which does not extend beyond the n.sup.

Abstract: A semi-precious alloy for use in a dental restoration which does not discolor porcelain and remains ductile after firing of a porcelain jacket thereon. The alloy is 80-90% palladium, 5-15% indium, 1-5% gallium, 0.1-0.5% aluminum, 0.1-0.5% silicon, and 0.01-1.0% of at least one element from ruthenium and osmium.

Abstract: Aluminum/copper alloy conductors are made by forming a patterned layer of copper on a layer of aluminum. The portion of the aluminum layer which is not protected by the copper layer is removed by reactive ion etching and the resulting structure is then heated to cause the copper to diffuse into, and alloy with the aluminum layer.

Abstract: A process and apparatus for producing a copper metal or alloy wherein a first material is added to a molten metal, consisting essentially of copper preferably in a furnace. After the first material is added, the molten metal is passed through a filtration device to remove particulate matter from the molten metal and/or reduce the oxygen content of the molten metal. After filtration, a second material is added to the molten metal.

Abstract: A disposable bed filter for removing particulate matter and/or reducing oxygen in a poured metal melt is located within a trough. The bed filter preferably comprises discrete layers of bed media located in a trough between entry and exit baffle plates. The layers of bed media include a layer of coarse media and a layer of fine media. The trough is preferably provided with a closeable lid to permit removal of the bed media and to compensate for buoyancy of the bed media if present. In its preferred use, the bed filter forms part of a process for making a metal alloy wherein the bed filter simultaneously reduces the oxygen content of the melt and filters particulate matter from the melt.

Abstract: A non-discoloring palladium-based alloy, free of silver or gold, suitable for fusion to dental porcelain compositions consists essentially of 75-85% by weight of Pd, 5-10% by weight of In, 5-10.5% by weight of Sn, up to 7.5% by weight of Co, Cr or Ni and up to 0.25% by weight of Si. Inclusion of 0.2-0.7% by weight of Ru improves the physical and mechanical properties of the alloy.