Abstract: An acoustic wave device includes a piezoelectric layer, an IDT electrode including electrode fingers, and a dielectric film covering the IDT electrode. When viewed in a direction orthogonal to a direction in which the electrode fingers extend, an area where adjacent two or more of the electrode fingers overlap one another is an intersecting area. The acoustic wave device further includes a thin-film layer at least a portion of which is embedded in the dielectric film, at least a portion of which overlaps the intersecting area in a plan view, an entirety of which does not overlap the electrode fingers in a plan view, having a higher density than the dielectric film, and having a smaller thickness than the electrode fingers. The electrode fingers and the thin-film layer are located at different positions in a thickness direction of the dielectric film.

Abstract: A surface acoustic wave resonator device and manufacturing method thereof, the surface acoustic wave resonator device has an interdigital electrode region including a first peripheral region, a first end region, a central region, a second end region and a second peripheral region, and includes: an interdigital transducer, disposed on a piezoelectric substrate and including interdigital electrodes located in the interdigital electrode region; an intermediate layer, disposed on the piezoelectric substrate and covering the interdigital transducer; an acoustic velocity adjusting layer, disposed on a side of at least a portion of the intermediate layer away from the piezoelectric substrate; and a passivation layer, disposed on a side of the intermediate layer away from the piezoelectric substrate, wherein the acoustic velocity adjusting layer is located in the central region, overlaps with portions of the interdigital electrodes located in the central region in a direction perpendicular to the piezoelectric substr

Abstract: An acoustic resonator has a piezoelectric plate attached to the surface of the substrate except for a portion of the piezoelectric plate forming a diaphragm spanning a cavity in the substrate. An interdigital transducer (IDT) formed on the plate has interleaved fingers on the diaphragm with first parallel fingers extending from a first busbar and second parallel fingers extending from a second busbar of the IDT. An average center-to-center distance between adjacent interleaved fingers defines an IDT pitch. The IDT has a gap distance between the ends of the first plurality of parallel fingers and the second busbar, and between the ends of the second plurality of parallel fingers and the first busbar; and the gap distance is less than ? times the IDT pitch.

Abstract: A filter includes a plurality of filtering paths. The plurality of filtering paths is driven by a corresponding plurality of local oscillator (LO) signals associated with an LO frequency. Each of the LO signals has a phase of a plurality of phases. Each filtering path of the plurality of filtering paths includes a plurality of signal generation branches. The plurality of signal generation branches is configured to receive a harmonic LO signal based on a fraction of the LO frequency, and generate an LO signal of the corresponding plurality of LO signals associated with the LO frequency using the harmonic LO signal.

Abstract: A surface acoustic wave (SAW) filter includes a bottom substrate, a piezoelectric layer disposed above the bottom substrate and having a bottom surface facing the bottom substrate and a top surface opposite to the bottom surface, a cavity disposed below the piezoelectric layer, a first interdigital transducer (IDT) disposed on the bottom surface of the piezoelectric layer, and a second IDT disposed on the top surface of the piezoelectric layer. An interdigital portion of the first IDT is exposed in the cavity. An interdigital portion of the second IDT is vertically aligned with the interdigital portion of the first IDT.

Abstract: Aspects of this disclosure relate to a multiplexer that includes a first filter and a second filter coupled to a common node. The first filter includes an acoustic filter arranged to filter a radio frequency signal, a matching network coupled between the acoustic filter and the common node, and a parallel circuit coupled in series between the acoustic filter and the common node. The parallel circuit includes an inductive component in parallel with a capacitive component. In certain instances, the first filter is coupled to the common node via a switch, the matching network is coupled to a node between the acoustic filter and the switch, and the parallel circuit is coupled in series between the acoustic filter and the switch. Related methods, radio frequency modules, and wireless communication devices are also disclosed.

Abstract: A filter may include a substrate and a rotated YX-cut piezoelectric plate coupled to the substrate. The filter also may include an interdigital transducer (IDT) formed on a portion of the rotated YX-cut piezoelectric plate forming a diaphragm that spans a cavity between the rotated YX-cut piezoelectric plate and the substrate. The IDT includes interleaved fingers that are disposed on the diaphragm. The IDT has an aperture that is less than or equal to 4 times a pitch of the interleaved fingers.

Abstract: A surface acoustic wave resonator device and method for manufacturing the same, and a surface acoustic wave filter, the surface acoustic wave resonator device includes: a first temperature compensation layer and an interdigital electrode structure, disposed on a base substrate, the interdigital electrode structure is at least partially embedded in the first temperature compensation layer, and includes interdigital electrodes extending along a first direction and arranged along a second direction; and a second temperature compensation layer, located on a side of the first temperature compensation layer and the interdigital electrode structure away from the base substrate; the interdigital electrode structure is surrounded and wrapped by the first temperature compensation layer in a direction parallel to the base substrate, and a surface of the interdigital electrode structure at a side away from the base substrate is covered by and in contact with the second temperature compensation layer.

Abstract: According to various embodiments, an array of elements forms an artificially-structured material. The artificially-structured material can also include an array of tuning mechanisms included as part of the array of elements that are configured to change material properties of the artificially-structured material on a per-element basis. The tuning mechanisms can change the material properties of the artificially-structured material by changing operational properties of the elements in the array of elements on a per-element basis based on one or a combination of stimuli detected by sensors included in the array of tuning mechanisms, programmable circuit modules included as part of the array of tuning mechanisms, data stored at individual data stores included as part of the array of tuning mechanisms, and communications transmitted through interconnects included as part of the array of elements.

Abstract: A multiplexer includes a common terminal, an inductor including a first end connected to the common terminal and a second end, a filter connected to the second end and having a first pass band, a filter connected to the common terminal and having a second pass band located on a higher frequency side relative to the first pass band, an inductor connected between a ground and a path that links the second end to the filter, and a capacitor connected between the path and the ground. A resonant frequency of an LC parallel resonance circuit including the inductor and the capacitor is located between the first pass band and the second pass band.

Abstract: A coupling resonator circuit includes a capacitive portion that includes a capacitive plate having a geometrical shape; and an inductive portion that is coupled to the capacitive portion. The inductive portion includes a transmission line having a first end and a second end, and the transmission line tapers from the first end in the direction of the second end such that a width of the transmission line at the first end is greater than a width of the transmission line at the second end. The coupling resonator circuit is configured to resonate at a desired coupling frequency; and dimensions of the capacitive portion and the inductive portion determines a separation in frequency between the desired coupling frequency and one or more resonant frequencies that are nearest to the desired coupling frequency.

Abstract: A combination filter comprises a notch filter formed of acoustic wave resonators and a cavity filter electrically in series with the notch filter to provide for the combination filter to operate at higher powers and frequencies.

Abstract: A surface acoustic wave resonator (100) comprises a layered substrate including a carrier substrate (110) and a dielectric layer (112) having a low acoustic velocity. Another dielectric layer (122) is disposed on a piezoelectric layer (113) and interdigitated electrodes (131, 132) having an acoustic velocity lower than the acoustic velocity of the carrier substrate (110) and a positive temperature coefficient of frequency.

Abstract: A semiconductor package structure includes a plurality of transducer devices, a cap structure, at least one redistribution layer (RDL) and a protection material. The transducer devices are disposed side by side. Each of the transducer devices has at least one transducing region, and includes a die body and at least one transducing element. The die body has a first surface and a second surface opposite to the first surface. The transducing region is disposed adjacent to the first surface of the die body. The transducing element is disposed adjacent to the first surface of the die body and within the transducing region. The cap structure covers the transducing region of the transducer device to form an enclosed space. The redistribution layer (RDL) electrically connects the transducer devices. The protection material covers the transducer devices.

Abstract: A bulk acoustic wave resonator device comprises a piezoelectric material layer, a first metal layer having a lower surface disposed on the upper surface of the piezoelectric material layer, a second metal layer having an upper surface disposed on the lower surface of the piezoelectric material layer, and an oxide raised frame disposed between the lower surface of the first metal layer and the upper surface of the second metal layer and surrounding a central active region of the bulk acoustic wave resonator device, the central active region having a first side and a second side, the oxide raised frame having a width on the first side of the central active region that is different from the width of the oxide raised frame on the second side of the central active region to improve an operating parameter of the bulk acoustic wave resonator.

Abstract: A film bulk acoustic wave resonator (FBAR) is disclosed with raised and recessed frame portions formed in a top electrode. The FBAR can include a substrate, a piezoelectric film supported to oscillate in a direction opposite to a main surface of the substrate, and a pair of top and bottom electrodes formed respectively on top and bottom surfaces of the film. The recessed frame portion and the raised frame portion can be formed to extend adjacent to each other along a periphery of an active region of the film oscillating during an operation of the film on a top surface of the top electrode.

Abstract: An acoustic wave device according to the present invention includes a piezoelectric substrate including a piezoelectric layer, a functional electrode provided on the piezoelectric layer, a first support layer provided on the piezoelectric substrate so as to surround the functional electrode, a covering portion provided on or above the first support layer and including a first main surface positioned on the functional electrode side and a second main surface opposite to the first main surface, a silicon oxide layer provided on the first main surface side of the covering portion, and an inductor provided on the silicon oxide layer and made of a wire. The covering portion is made of silicon. The acoustic wave device further includes one of an amorphous silicon layer and a polysilicon layer provided between the covering portion and the silicon oxide layer.

Abstract: According to the present disclosure, a passband filter is provided. The passband filter has a series branch, where the series branch comprises a set of one or more resonators having a resonant frequency sufficiently away from the passband of the filter such that spurious modes, of the set of one or more resonators, that are associated with the resonant frequency are outside of the passband of the filter; a set of one or more reactive components in series with the set of one or more resonators, the set of one or more reactive components having a resonant frequency sufficiently away from the passband of the filter such that the spurious modes of the set of one or more reactive components, that are associated with the resonant frequency are outside of the passband, and such that the resulting combined resonant frequency of the series combination of the set of one or more resonators and the set of one or more reactive components is within the passband of the filter.

Abstract: A device includes a stack of at least two piezoelectric layers configured to propagate a Lamb wave in a mode having an order corresponding to a number of piezoelectric layers of the stack. The stack includes a first piezoelectric layer and a second piezoelectric layer disposed on the first piezoelectric layer. The first piezoelectric layer has a first cut plane orientation, and the second piezoelectric layer has a second cut plane orientation complementary to the first cut plane orientation. The device further includes an interdigitated transducer (IDT) disposed on at least a top surface of the stack or a bottom surface of the stack. In some embodiments, the device is an acoustic resonator. In some embodiments, the device is an acoustic delay line.

Abstract: An integrated bulk acoustic wave resonator-capacitor comprises a membrane including a piezoelectric film, an upper electrode disposed on a top surface of the piezoelectric film, and a lower electrode disposed on a lower surface of the piezoelectric film, a resonator region of the membrane defining a main active domain in which a main acoustic wave is generated during operation, and a capacitor region of the membrane surrounding the resonator region, the capacitor region including a layer of conductive material disposed on the upper electrode, an inner capacitor raised frame defined on an inner peripheral region of the layer of conductive material, and an outer capacitor raised frame defined on an outer peripheral region of the layer of conductive material.