Abstract: A multiplexer includes: first and second substrates overlapping with each other with an air gap interposed therebetween; a first filter disposed on the first substrate and including first series resonators connected in series with a first path, and first parallel resonators; and a second filter disposed on the second substrate and including second series resonators connected in series with a second path, and second parallel resonators connected between the second path and a ground, each of the second series resonators and the second parallel resonators including a piezoelectric film, a first electrode interposed between the piezoelectric film and the second substrate, a second electrode interposed between the piezoelectric film and the air gap, and a resonance region, in at least one second parallel resonator, the first electrode being coupled to the second path, the second electrode being coupled to the ground, the resonance region overlapping with the first path.

Abstract: An acoustic wave device comprises a substrate including a piezoelectric material, interdigital transducer (IDT) electrodes disposed on a surface of the substrate, the IDT electrodes having gap regions, edge regions, and center regions, a first dielectric film having a lower surface disposed on the IDT electrodes and the surface of the substrate, and a material having a density greater than a density of the first dielectric film disposed above the gap regions of the IDT electrodes.

Abstract: A laterally vibrating bulk acoustic wave (LVBAW) resonator includes a piezoelectric plate sandwiched between first and second metal layers. The second metal layer is patterned into an interdigital transducer (IDT) with comb-shaped electrodes having interlocking fingers. The width and pitch of the fingers of the electrodes determine the resonant frequency. A combined thickness of the first and second metal layers and the piezoelectric layer is less than the pitch of the interlocking fingers.

Abstract: An acoustic wave device includes a substrate, a functional element provided on the substrate, a cover layer provided on or above the substrate to cover the functional element, and a protection layer that covers the cover layer. The cover layer includes a curved portion that is curved to protrude outward. A hollow space is defined between the curved portion and the substrate, and the functional element is provided in the hollow space. The acoustic wave device also includes a conductive portion that is provided between the curved portion and the protection layer and extends along a surface of the curved portion.

Abstract: An elastic wave device includes a piezoelectric body including a main surface, an IDT electrode provided on the main surface of the piezoelectric body, and a wiring electrode provided on the main surface of the piezoelectric body and electrically connected to the IDT electrode, in which the wiring electrode includes a portion that extends to an edge of the main surface of the piezoelectric body, and a width of the wiring electrode on the edge is narrower than a width of the wiring electrode in a portion not on the edge.

Abstract: In an acoustic wave device, an interdigital transducer electrode is disposed on a piezoelectric substrate with a reverse velocity surface having an elliptic shape, and a dielectric film is disposed to cover the interdigital transducer electrode. Assuming an electrode density (%) of the interdigital transducer electrode to be y (%) and a wavelength-normalized film thickness 100h/? (%) of the interdigital transducer electrode to be x (%), the wavelength-normalized film thickness x of the interdigital transducer electrode takes a value not less than x satisfying y=0.3452x2?6.0964x+36.262 depending on the electrode density of the interdigital transducer electrode.

Abstract: A bulk acoustic wave filter includes: a first bulk acoustic wave resonator including, in an order from bottom to top, a first cavity, a first bottom electrode, a first segment of a piezoelectric layer, and a first top electrode; a second bulk acoustic wave resonator disposed adjacent to the first bulk acoustic wave resonator, and including, in the order from bottom to top, a second cavity, a second bottom electrode, a second segment of the piezoelectric layer, and a second top electrode; a boundary structure surrounding the first cavity and the second cavity, the boundary structure including a boundary portion extending between and separating the first cavity and the second cavity, and the boundary portion being disconnected at a disconnection region; and a first release hole formed in the piezoelectric layer, and overlapping the disconnection region.

Abstract: An acoustic wave device includes an interdigital transducer electrode connected to first and second terminals, and a reflector connected to the second terminal. In a group of electrode fingers of the interdigital transducer electrode, the electrode fingers at one end and another end in a second direction are respectively first and second end electrode fingers, the first end electrode finger includes a wide portion at a distal end portion. The first end electrode finger is located between the reflector and the second end electrode finger in the second direction. An inner busbar portion of one of first and second busbars not connected to the first end electrode finger, is located on an inner side in the second direction relative to the wide portion of the first end electrode finger so as not to overlap the wide portion of the first end electrode finger in a first direction.

Abstract: Acoustic wave resonators are disclosed that include a piezoelectric layer and an interdigital transducer electrode over the piezoelectric layer. The interdigital transducer electrode has a rotation angle and a tilt angle. The rotation angle and the tilt angle can together increase a figure of merit of the acoustic wave device. The rotation angle and the tilt angle can both be non-zero.

Abstract: An elastic wave device includes a piezoelectric substrate, an IDT electrode on the piezoelectric substrate, and a silicon oxide film arranged on the piezoelectric substrate to cover the IDT electrode. The IDT electrode includes first and second electrode layers laminated on each other, the first electrode layer is made of metal or an alloy with a density higher than a density of metal of the second electrode layer and a density of silicon oxide of the silicon oxide film, the piezoelectric substrate is made of LiNbO3 and ? is in a range of equal to or greater than about 8° and equal to or less than about 32° with Euler Angles (0°±5°, ?, 0°±10°) of the piezoelectric substrate, and the silicon oxide film contains hydrogen atoms, hydroxyl groups, or silanol groups.

Abstract: An acoustic wave device includes a support substrate made of silicon, a piezoelectric body provided directly or indirectly on the support substrate, the piezoelectric body including a pair of main surfaces facing each other, and an interdigital transducer electrode provided directly or indirectly on at least one of the main surfaces of the piezoelectric body, a wave length that is determined by an electrode finger pitch of the interdigital transducer electrode being ?. An acoustic velocity VSi=(V1)1/2 of bulk waves that propagate in the support substrate, which is determined by V1 out of solutions V1, V2, V3 of x derived from the expression, Ax3+Bx2+Cx+D=0, is higher than or equal to about 5500 m/s.

Abstract: A packaged acoustic wave component is disclosed. The packaged acoustic wave component can include a first acoustic wave resonator that includes a first interdigital transducer electrode that is positioned over a first piezoelectric layer. The packaged acoustic wave component can also include a second acoustic wave resonator including a second interdigital transducer electrode positioned over a second piezoelectric layer. The second piezoelectric layer is bonded to the first piezoelectric layer. The packaged acoustic wave component can further include a stopper structure that is positioned over the first piezoelectric layer. The first stopper structure is positioned above a via and extends through the first piezoelectric layer. The stopper structure is in electrical communication with the first interdigital transducer electrode and includes a material which reflects at least fifty percent of light having a wavelength of 355 nanometers.

Abstract: A multiplexer includes a first transmission filter connected to a common terminal, a reception filter, a second transmission filter, and a multilayer substrate. The first transmission filter includes a first parallel-arm resonator connected to a first parallel-arm terminal and a second parallel-arm resonator connected to a second parallel-arm terminal. The second transmission filter includes a third parallel-arm resonator connected to a third parallel-arm terminal and a fourth parallel-arm resonator connected to a fourth parallel-arm terminal. The first to fourth parallel-arm resonators are surface-mounted on a main surface of the multilayer substrate. The second and third parallel-arm terminals are grounded on any dielectric layer from the main surface to an n-th dielectric layer of the multilayer substrate and the first and fourth parallel-arm terminals are isolated from each other on the dielectric layers from the main surface to the n-th dielectric layer.

Abstract: A combiner/divider includes a plurality of input/output waveguides distributed in a plane and diverging in at least a partially common direction away from a central point. Each input/output waveguide extends from an outer node disposed distal of the central point to an inner port proximate to and spaced from the central point. Each input/output waveguide has a respective dimension in the plane that increases between the inner port and the outer node. An output/input waveguide has an aggregate port proximate to the central point and facing the inner ports. A transition waveguide defines an open cavity that flares outwardly in the plane from the aggregate port toward the inner ports and communicatively couples the output/input waveguide with the input/output waveguides. Opposing distal surfaces of the transition waveguide and inner port edges are spaced apart by a distance that decreases with increasing distance from the aggregate port.

Abstract: A semiconductor package structure includes a plurality of transducer devices, a cap structure, at least one redistribution layer (RDL) and a protection material. The transducer devices are disposed side by side. Each of the transducer devices has at least one transducing region, and includes a die body and at least one transducing element. The die body has a first surface and a second surface opposite to the first surface. The transducing region is disposed adjacent to the first surface of the die body. The transducing element is disposed adjacent to the first surface of the die body and within the transducing region. The cap structure covers the transducing region of the transducer device to form an enclosed space. The redistribution layer (RDL) electrically connects the transducer devices. The protection material covers the transducer devices.

Abstract: Examples described herein provide selective filtering by a network device for continuous 5 GHz and 6 GHz operation. Examples may include receiving, by the network device, a first signal in a 5 GHz band, and generating, by the network device, a second signal in a 6 GHz band. Examples may include selecting, by the network device, a first filter or a second filter to be applied the first signal in the 5 GHz band, wherein the first filter allows a lower frequency band to pass than the second filter in the 5 GHz band, selecting, by the network device, a third filter or a fourth filter to be applied to the second signal in the 6 GHz band, wherein the third filter allows a lower frequency band to pass than the fourth filter in the 6 GHz band, and simultaneously applying, by the network device, the selected first or second filter to the first signal and the selected third or fourth filter to the second signal.

Abstract: An electronic device package includes a lower surface for conducting electronic signals, a first solder bond pad having a first size disposed on the lower surface, and a plurality of second solder bond pads having second sizes smaller than the first size disposed on the lower surface and surrounding the first solder bond pad.

Abstract: An acoustic wave device includes a material layer with Euler angles and an elastic constant at the Euler angles represented by Expression 1, a piezoelectric body including opposing first and second principal surfaces, is laminated directly or indirectly on the material layer and has Euler angles, and whose elastic constant at the Euler angles is represented by the Expression 1 below, and an IDT electrode on at least one of first and second principal surfaces of the piezoelectric body, and in which a wave length determined by an electrode finger pitch is ?.

Abstract: A directional coupler includes a main line, a first sub-line to be electromagnetically coupled to the main line, a second sub-line to be electromagnetically coupled to the main line, and a coupling terminal configured to output a detection signal corresponding to a radio frequency signal that is transmitted through the main line, the first sub-line and the second sub-line are different in length from each other, and connection between the first sub-line and the coupling terminal and connection between the second sub-line and the coupling terminal are switched.

Abstract: Apparatus and methods for front-end systems with directional couplers and a shared back switch are provided. In certain configurations, a method includes transmitting a first transmit signal from a first transmit port to an antenna port, generating a first coupled signal in response to the first transmit signal using a first directional coupler, providing the first coupled signal to a receive port by way of a first loopback selection switch and a shared back switch, transmitting a second transmit signal from a second transmit port to the antenna port, generating a second coupled signal in response to the second transmit signal using a second directional coupler, and providing the second coupled signal to the receive port by way of a second loopback selection switch and the shared back switch.