Abstract: To reduce the time required for data writing. A semiconductor memory device is provided, comprising a memory cell having a gate electrode including a selection gate and a memory gate, a source line connected to a source, and a bit line connected to a drain, an extraction part that extracts a current flowing from the source side to the drain side during writing in the memory cell from the bit line, a discharge part that has a higher ability to pass current than the extraction part and lowers the voltage of the bit line, a charge part that has a higher ability to pass current than the discharge part and applies a voltage to the bit line, and a control part that, when starting to write to the memory cell, lowers the voltage of the bit line by the discharge part and applies a voltage to the bit line by the charge part.

Abstract: Provided herein may be a memory device and a method of operating the same. The memory device may include a memory block including a plurality of memory strings, a peripheral circuit configured to perform an erase operation and a program operation on the memory block, and a control logic configured to control the peripheral circuit to perform the erase operation and the program operation on the memory block, wherein the control logic is configured to control the peripheral circuit to perform an abnormally injected electron removal operation that removes abnormally injected electrons trapped in a charge storage layer of a plurality of memory cells included in the memory block after the erase operation has been completed.

Abstract: Technology for operating word line switch transistors in a memory system. A memory system provides for separate control of the voltage to the gates of the word line switch transistors and a voltage to a well in which the word line switch transistors reside. This allows for a negative voltage to be applied to the gates and/or the well. However, if desired, a non-negative voltage (e.g., 0V) may be applied to the gates or the well.

Abstract: An operating method of a memory system is disclosed herein. The operating method includes: inputting tracking data to a tracking array; generating tracking logic values by tracking cell columns of the tracking array according to the tracking data; counting the tracking logic values to generate a summation value; adjusting a sensing time of a sensing device according to the summation value; performing a computing operation by a computing array to generate computing signals; and sensing the computing signals by the sensing device according to the adjusted sensing time.

Abstract: A non-volatile memory device comprises an array of non-volatile memory cells, a controller in communication with the non-volatile memory cell, a row driver including a plurality of high-voltage switches for applying high-voltages to non-volatile memory cells, a column driver including a plurality of sensing circuits for monitoring the data of the non-volatile memory cells; and, a plurality of time delay circuits, wherein the time delay circuit is configured to reduce peak current caused by simultaneous application of high voltages to the non-volatile memory cells or simultaneous detection of current flowing across bit lines of the non-volatile memory cells.

Abstract: A memory apparatus and method of operation are provided. The apparatus includes memory cells each connected to one of a plurality of word lines and disposed in memory holes. The memory cells are configured to retain a threshold voltage corresponding to one of a plurality of data states. A control means is coupled to the plurality of word lines and the memory holes and is configured to program the memory cells in a program operation. During the program operation, the control means programs the memory cells connected to at least one particular word line of the plurality of word lines using a first programming technique while programming the memory cells connected to plurality of word lines other than the at least one particular word line using a second programming technique different than the first programming technique.

Abstract: Methods, systems, and devices related to row activation indication registers are disclosed. A first register can be coupled to a memory device and configured to store an indication of a first number of bit locations of a row address corresponding to the memory device to use in association with optimization of a row precharge time (tRP) of the memory device. A second register can be coupled to the memory device and configured to store an indication of a second number of bit locations of the row address to use in association with optimization of a row address to column address delay (tRCD) of the memory device.

Abstract: In a method of operating one or more nonvolatile memory devices including one or more memory blocks, each memory block includes a plurality of memory cells and a plurality of pages arranged in a vertical direction. Pages arranged in a first direction of a channel hole are set as first to N-th pages. A size of the channel hole increases in the first direction and decreases in the second direction. Pages arranged in a second direction of the channel hole are set as (N+1)-th to 2N-th pages. First to N-th page pairs are set such that a K-th page among the first to the N-th pages and an (N+K)-th page among the (N+1)-th to 2N-th pages form one page pair. Parity regions of two pages included in at least one page pair are shared by the two pages included in the at least one page pair.

Abstract: According to one embodiment, a semiconductor memory device includes a first memory cell and a second memory cell arranged adjacent to each other and coupled in series; and a control circuit, wherein the control circuit is configured to: at a time of the program operation in a first program loop operation targeted for the first memory cell, during a first period, while suppling a first write voltage to the first memory cell, supply a first voltage smaller than the first write voltage to the second memory cell, and during a second period, while supplying a second voltage smaller than the first voltage to the first memory cell, supply a third voltage greater than the second voltage to the second memory cell.

Abstract: According to one embodiment, a semiconductor memory device includes a first memory cell; a word line coupled to a gate of the first memory cell; a first transistor having a first end coupled to the word line; and a control circuit configured to, in a read operation, apply a first voltage, which is positive, to a back gate of the first transistor.

Abstract: A sense amplifier control system includes a precharge control switch configured to receive a precharge signal. A reference cell is configured to receive a reference word line signal. In a precharge phase, the control switch is controlled in response to the precharge signal to precharge the reference input node to a predetermined precharge level. In a sensing phase subsequent to the pre-charge phase, the trigger circuit is configured to output a triggering signal at the output terminal in response to the reference input node reaching a triggering level.

Abstract: In a semiconductor memory device, an n-type semiconductor layer is formed on a p-type semiconductor region on a substrate, a p-type first semiconductor layer having a columnar shape and concave top surface extends vertically from part of the n-type semiconductor layer, the p-type first semiconductor layer and n-type semiconductor layer are partially covered with an insulating layer, a first gate insulating layer is placed in contact with the p-type first semiconductor layer, a first gate conductor layer is placed in contact with the first gate insulating layer, and a second gate insulating layer, a second gate conductor layer, and an access transistor with an n+ layer provided on both sides are installed along a surface of the p-type first semiconductor layer.

Abstract: Interfaces between higher voltage and lower voltage wafers and related apparatuses and methods are disclosed. An apparatus includes a memory wafer and a logic wafer. Data storage elements of an array are configured to perform an operation responsive to an operational voltage potential. The memory wafer also includes bitlines electrically connected to the data storage elements and isolation devices electrically connected to the bitlines. The logic wafer is bonded to the memory wafer. The logic wafer includes logic circuitry electrically connected to the bitlines through the isolation devices. A maximum voltage potential difference tolerance of the logic circuitry is less than an operational voltage potential difference between the operational voltage potential and a reference voltage potential of the logic circuitry.

Abstract: Control logic in a memory device initiates a program operation to program one or more memory cells of a first sub-block of a memory array, the program operation including a seeding phase. During the seeding phase, a first wordline voltage is caused to be applied to a first wordline segment associated with a first portion of the memory array. During the seeding phase, a second wordline voltage is caused to be applied to a second wordline segment associated with a second portion of the memory array, where the first wordline voltage and the second wordline voltage cause a seeding bias voltage to be applied to the first sub-block group and inhibit application of the seeding bias voltage to the second sub-block group.

Abstract: According to an embodiment of the present disclosure, a memory device includes a memory cell array including a plurality of planes; a charge pump configured to generate an operating voltage used for an operation on each of the plurality of planes according to a first clock signal having a first cycle; page buffers each configured to store pass data representing whether an operation of each of the plurality of planes has been completed; and an operation control circuit configured to, based on a number of the pass data received from the page buffers, control the charge pump to generate the operating voltage according to a second clock signal having a second cycle that is longer than the first cycle.

Abstract: A memory device, and a method of operating the memory device, includes a memory block, a peripheral circuit, an erase controller, and a parameter setter. The memory device includes a plurality of sub blocks. The peripheral circuit performs an erase operation on a target sub block among the plurality of sub blocks. The erase controller controls the peripheral circuit to perform the erase operation based on a default parameter or an optimal parameter according to a group to which the target sub block belongs among first, second, and third groups. The parameter setter sets the optimal parameter based on a result of the erase operation when the target sub block is included in the first group or the third group.

Abstract: An address counter comprises a flip-flop for performing a load operation of loading a start column address signal, responsive to a first logic signal provided to the flip-flop SET terminal and a second logic signal provided to a RESET terminal and for performing a counting operation of sequentially increasing a data value of the start column address signal.

Abstract: The present disclosure provides memory devices, operating methods thereof, memory systems, and word line voltage control circuits. A disclosed memory device comprises an array of memory cells, a plurality of word lines coupled with the memory cells, and a peripheral circuit coupled to the memory cells through the word lines. The peripheral circuit is configured to reduce a first voltage on a non-selected word line adjacent to a selected word line to a second voltage, provide a pre-charge voltage to the selected word line, increase the second voltage on the non-selected word line to a third voltage, and float the selected word line.

Abstract: When selectively erasing one sub-block, a control circuit applies, in a first sub-block, a first voltage to bit lines and a source line, and applies a second voltage smaller than the first voltage to the word lines. Then, the control circuit applies a third voltage lower than the first voltage by a certain value to a drain-side select gate line and a source-side select gate line, thereby performing the erase operation in the first sub-block. The control circuit applies, in a second sub-block existing in an identical memory block to the selected sub-block, a fourth voltage substantially identical to the first voltage to the drain side select gate line and the source side select gate line, thereby not performing the erase operation in the second sub-block.

Abstract: A memory circuit includes a plurality of first memory cells. The plurality of first memory cells are operatively coupled to a first bit line. The memory circuit further includes a first pre-charge circuit connected to a first end of the first bit line and configured to charge the first bit line to a supply voltage during a first time period prior to any of the first memory cells being accessed. The memory circuit further includes a second pre-charge circuit connected to a second end of the first bit line and also configured to charge the first bit line to the supply voltage during the first time period. The second pre-charge circuit is only activated during a second time period at a beginning of the first time period, while the first pre-charge circuit is activated during a whole of the first time period.