Abstract: Provided is a semiconductor device reducing local increase in temperature caused by a void in a bonding material. A semiconductor device includes a conductive member, a semiconductor element, a bonding part, and a lead. The semiconductor element includes a switching element. The semiconductor element is held by the conductive member via a first bonding material. The bonding part is provided on an upper surface of the semiconductor element. The bonding part is electrically connected to an electrode of the switching element other than a gate electrode. The lead is bonded to the bonding part via a second bonding material. The bonding part and the second bonding material are provided in a region including a center part of the upper surface of the semiconductor element.

Abstract: Examples of devices for providing cooling solutions are described. One example device at least one printed circuit board (PCB) and at least one baffle cover positioned along an edge of the at least one PCB. The at least one PCB is immersed in a cooling fluid in a tank. The at least one PCB includes one or more integrated circuit (IC) chips with a thermal interface material (TIM) applied to surfaces of the one or more IC chips that are coupled to a boilerplate. The baffle cover includes one or more openings that are configured to control an agitation of the cooling fluid proximate to the edge of the at least one PCB.

Abstract: A semiconductor device includes a first electrode, a ferroelectric layer disposed on the first electrode and implementing a negative capacitance, a dielectric structure disposed on the ferroelectric layer and including a first dielectric layer and a second dielectric layer that are alternately stacked, and a second electrode disposed on the dielectric structure. The ferroelectric layer and the dielectric structure are configured to be electrically connected in series to each other. The ferroelectric layer and dielectric structure together have a non-ferroelectric property.

Abstract: An example thin-film transistor includes a substrate, a source including a body of source material on the substrate, a drain including a body of drain material on the substrate, a body of channel material between the source and the drain, a body of gate dielectric material on the body of channel material, and a body of gate material on the body of gate dielectric material. The source material includes a metal nitride.

Abstract: A display panel includes a driving circuit layer, light emitting components and encapsulation structures. The light emitting components are disposed on the driving circuit layer, and each includes a first electrode, a light emitting pattern disposed on the first electrode, a second electrode disposed on the light emitting pattern and a pixel definition layer disposed on the driving circuit layer. The pixel definition layer has a pixel opening overlapping with the first electrode. The light emitting pattern and the second electrode cover the pixel definition layer, the first electrode located in the pixel opening and a portion of the driving circuit layer located outside the pixel opening. The encapsulation structures respectively cover the light emitting components, and each encapsulation structure includes a first encapsulation pattern. Edges of the first encapsulation pattern, the light emitting pattern and the second electrode overlapping with each other are aligned with each other.

Abstract: An electronic package and a manufacturing method thereof are provided, in which a full-panel wafer is provided and includes a plurality of electronic bodies arranged in an array at intervals, a plurality of trenches are formed across the electronic bodies along a first direction on the full-panel wafer, so that the trenches on a single electronic body are arranged parallel to each other at interval and along a second direction perpendicular to the first direction. Then, in a singulation process, any trench can be selected for cutting to obtain a plurality of electronic elements of a required size. Finally, each of the electronic elements is disposed on a packaging region of a carrier structure, so that each of the electronic elements is electrically connected to at least a portion of electrical contact pads in the packaging region.

Abstract: A circuit board includes a plurality of first insulating base materials and a plurality of second insulating base materials that are alternately laminated, a first metal layer being formed into a pattern shape on a first surface of the first insulating base material, and a second metal layer being formed into a pattern shape on a second surface of the first insulating base material. The first metal layer is formed into a trapezoidal shape that is large in diameter on a first surface side of the first insulating base material. The second metal layer is formed into a trapezoidal shape that is large in diameter on a second surface side of the first insulating base material. The first metal layers and the second metal layers are laminated in such a manner that the trapezoidal shapes are alternately oriented.

Abstract: A package device is provided. The package device includes a substrate, a plurality of upper lands disposed on one surface of the substrate, a plurality of upper solder balls disposed on the plurality of upper lands, a die connected to the plurality of upper solder balls, a plurality of lower lands disposed on the other surface of the substrate, a plurality of lower solder balls disposed on some of the plurality of lower lands, and a capacitor connected to the lower lands on which the plurality of lower solder balls are not disposed among the plurality of lower lands, provided on an opposite side of the die, and including a height greater than the height of the plurality of lower solder balls.

Abstract: A semiconductor chip includes: a photonic integrated circuit (PIC) comprising an active component electrically connected to a first landing pad at a surface of the PIC, wherein the first landing pad is configured to receive a copper pillar, which, when installed, provides at least a portion of a first electrical interconnect between the active photonic component and a second integrated circuit to be stacked on the surface of the PIC, and wherein, when viewed from above the PIC towards the PIC, a center of the active photonic component on the PIC is offset from a nearest edge of the first landing pad by about a distance less than 10 ?m.

Abstract: A wire protecting part partially encloses a first lead frame and a second lead frame and has an enclosing surface from which the first and second lead frames protrude. The enclosing surface is parallel to semiconductor chips, and includes a water stop part protruding, from the enclosing surface, between the first and second lead frames.

Abstract: Micro-LED structures include an LED epilayer that may be formed before the micro-LED structure is coupled to a backplane substrate. In order to prevent light leakage and maximize light output, the sidewalls and other surfaces of the LED epilayer may be coated with a reflective coating. For example, the reflective coating may include a metal layer that is electrically insulated between dielectric layers from the micro-LED electrodes. The reflective coating may also be formed using multiple layers in a distributed Bragg reflector configuration. This reflective coating may be formed during the LED fabrication process before the micro-LED structure is coupled to the backplane. The pixel isolation structures on the backplane may also include a reflective coating that is applied above the LED epilayers.

Abstract: A display screen includes a backplane, an array of light-emitting diodes electrically integrated with the backplane, the array of light-emitting diodes configured to emit UV light in a first wavelength range, and a plurality of isolation walls formed on the backplane between adjacent light-emitting diodes of the array of light-emitting diodes with the isolation walls spaced apart from the light-emitting diodes and extending above the light-emitting diodes. The plurality of isolation walls include a core of a first material and a coating covering at least a portion of the core extending above the light-emitting diodes. The coating is an opaque second material having transmittance less than 1% of light in the first wavelength range.

Abstract: An integrated circuit (IC) package comprising a die having a front side and a back side. A solder thermal interface material (STIM) comprising a first metal is over the backside. The TIM has a thermal conductivity of not less than 40 W/mK; and a die backside material (DBM) comprising a second metal over the STIM, wherein the DBM has a CTE of not less than 18×10?6 m/mK, wherein an interface between the STIM and the DBM comprises at least one intermetallic compound (IMC) of the first metal and the second metal.

Abstract: Disclosed are an LED light and a heat dissipation device thereof. The LED light comprises at least one LED light bead disposed on the heat dissipation device. The heat dissipation device comprises a circuit board having a first metal layer and a second metal layer located on two opposite sides respectively; and a heat sink. The LED light bead is welded to the first metal layer. The second metal layer is welded to the heat sink. The circuit board has heat conductive holes, so that a heat energy generated by the LED light bead can be transferred to the heat sink through the heat conductive holes. Some of the heat conductive holes can be optionally filled with heat conductive material columns, so that the heat energy generated by LED light bead can be conducted to the heat sink through the heat conductive material columns in the heat conductive holes.

Abstract: Micro-LED structures include an LED epilayer that may be formed before the micro-LED structure is coupled to a backplane substrate. In order to prevent light leakage and maximize light output, the sidewalls and other surfaces of the LED epilayer may be coated with a reflective coating. For example, the reflective coating may include a metal layer that is electrically insulated between dielectric layers from the micro-LED electrodes. The reflective coating may also be formed using multiple layers in a distributed Bragg reflector configuration. This reflective coating may be formed during the LED fabrication process before the micro-LED structure is coupled to the backplane. The pixel isolation structures on the backplane may also include a reflective coating that is applied above the LED epilayers.

Abstract: A light-emitting element includes a pixel electrode arranged on an inorganic insulating film having an uneven structure on a first surface, and having a first electrode and a second electrode having an uneven structure finer than the uneven structure on a third surface, an electron injection layer arranged on the second electrode, an electron transport layer arranged on the electron injection layer, a light-emitting layer arranged on the electron transport layer and a common electrode arranged on the light-emitting layer.

Abstract: A semiconductor device includes: a semiconductor element; an island lead on which the semiconductor element is mounted; a terminal lead electrically connected to the semiconductor element; a wire connected to the semiconductor element and the terminal lead; and a sealing resin covering the semiconductor element, the island lead, the terminal lead, and the wire. The terminal lead includes a base member having an obverse surface facing in a thickness direction of the terminal lead, and a metal layer located between the obverse surface and the wire. The base member has a greater bonding strength with respect to the sealing resin than the metal layer. The obverse surface includes an opposing side facing the island lead. The obverse surface includes a first portion that includes at least a portion of the opposing side and that is exposed from the metal layer.

Abstract: An IC assembly, including a PCB, including a first stripline; a ground layer; a first cavity extending from the PCB to the first stripline; a second cavity extending from the PCB to the ground layer; wherein the first cavity includes first solder paste in contact with the first portion of the first stripline exposed at the first cavity, wherein the second cavity includes second solder paste in contact with the second portion of the ground layer exposed at the second cavity, a BGA including a first solder ball and a second solder ball; wherein the BGA is coupled to the PCB, including: the first solder ball positioned within the first cavity such that the first solder ball contacts the first solder paste in the first cavity; the second solder ball positioned with the second cavity such that the second solder ball contacts the second solder paste in the second cavity.

Abstract: An image pickup unit includes: an image pickup substrate including a first principal surface and a second principal surface, a light receiving circuit being formed on the first principal surface and a through wiring being placed on an inner surface of a via hole including an opening in the second principal surface; a solder resist film placed around the via hole on the second principal surface and in the via hole in a range from a bottom face to a level not reaching the second principal surface; and a bonding terminal which is made of solder, covers a surface of the solder resist film placed in the via hole, and is bonded to the through wiring on an outer edge of the opening in the via hole, the through wiring being not covered with the solder resist film.

Abstract: Micro-LED structures include an LED epilayer that may be formed before the micro-LED structure is coupled to a backplane substrate. In order to prevent light leakage and maximize light output, the sidewalls and other surfaces of the LED epilayer may be coated with a reflective coating. For example, the reflective coating may include a metal layer that is electrically insulated between dielectric layers from the micro-LED electrodes. The reflective coating may also be formed using multiple layers in a distributed Bragg reflector configuration. This reflective coating may be formed during the LED fabrication process before the micro-LED structure is coupled to the backplane. The pixel isolation structures on the backplane may also include a reflective coating that is applied above the LED epilayers.