Abstract: Provided are a package structure and a method of forming the same. The package structure includes a first die, a second die group, an interposer, an underfill layer, a thermal interface material (TIM), and an adhesive pattern. The first die and the second die group are disposed side by side on the interposer. The underfill layer is disposed between the first die and the second die group. The adhesive pattern at least overlay the underfill layer between the first die and the second die group. The TIM has a bottom surface being in direct contact with the first die, the second die group, and the adhesive pattern. The adhesive pattern separates the underfill layer from the TIM.

Abstract: A gallium nitride-on-silicon structure is disclosed in which the two-dimensional electron gas (2DEG) layer is a discontinuous layer that includes at least two 2DEG segments. Each 2DEG segment is separated from another 2DEG segment by a gap. The 2DEG layer can be depleted by a p-doped gallium nitride layer that is disposed over a portion of an aluminum gallium nitride layer. Additionally or alternatively, a trench may be formed in the structure through the 2DEG layer to produce a gap in the 2DEG layer. An electrical component is positioned over at least a portion of a gap.

Abstract: A package structure includes a first dielectric layer, a first semiconductor device over the first dielectric layer, a first redistribution line in the first dielectric layer, a second dielectric layer over the first semiconductor device, a second semiconductor device over the second dielectric layer, a second redistribution line in the second dielectric layer, a conductive through-via over the first dielectric layer and electrically connected to the first redistribution line, a conductive ball over the conductive through-via and electrically connected to the second redistribution line, and a molding material. The molding material surrounds the first semiconductor device, the conductive through-via, and the conductive ball, wherein a top of the conductive ball is higher than a top of the molding material.

Abstract: A package is disclosed. In one example, the package includes a first main face for mounting a heat sink and an opposing second main face for being mounted on a mounting base. The package comprises a carrier, an electronic component mounted at the carrier, and an encapsulant encapsulating at least part of the electronic component and at least part of the carrier. Electrically insulating material covers electrically conductive material of the carrier at said first main face. The encapsulant comprises at least one step at the first main face.

Abstract: The present disclosure provides an encapsulated fluorescent adhesive layer, a method for manufacturing the same, and a quantum dot backlight. The quantum dot backlight includes a substrate, a light emitting chip, and the encapsulated fluorescent adhesive layer. The encapsulated fluorescent adhesive layer is used for heat transfer and heat dissipation.

Abstract: A method of manufacturing a semiconductor device includes applying a polymer mixture over a substrate, exposing and developing at least a portion of the polymer mixture to form a developed dielectric, and curing the developed dielectric to form a dielectric layer. The polymer mixture includes a polymer precursor, a photosensitizer, and a solvent. The polymer precursor may be a polyamic acid ester.

Abstract: In some examples a semiconductor chip package includes a conductive terminal. In addition, the semiconductor chip package includes a die pad including a top side and a recess extending into the top side. The die pad is downset relative to the conductive terminal. Further, the semiconductor ship package includes a semiconductor die positioned within the recess, wherein the semiconductor die has an outer perimeter, and a solder fillet engaged within the recess and with the outer perimeter of the semiconductor die. Still further, the semiconductor chip package includes a wire bond coupled to the semiconductor die and the conductive terminal, and a mold compound covering the conductive terminal, the wire bond, the die pad, and the semiconductor die.

Abstract: A method of manufacturing a circuit substrate includes forming, in an insulating substrate and circuit patterns that are provided on a first surface and a second surface of the insulating substrate, a through-hole penetrating the insulating substrate and the circuit patterns, where the circuit patterns contain Cu as a main component. The method includes filling, in the through-hole, an electrically conductive paste that is a melting-point shift electrically conductive paste including Sn—Bi solder powder, Cu powder, and resin, and forming a protrusion obtained by causing the electrically conductive paste to protrude from the through-hole. The method further includes performing pressure treatment on the protrusion near the through-hole; and performing heat treatment on the insulating substrate whose protrusion is subjected to the pressure treatment and causing the circuit patterns and the electrically conductive paste to be electrically connected with each other.

Abstract: Multi-dimensional photonic integrated circuits are provided, including a substrate having a first side and a second side, a multi-dimensional package having multi-dimensional planes, and one or more optical components connected to the first side and the second side of the substrate and on the multi-dimensional planes of the multi-dimensional package. The multi-dimensional planes include one or more horizontal sides and one or more vertical sides. One or more of the optical components are mounted on at least one of the horizontal sides of the multi-dimensional package and one or more of the optical components are mounted on at least one of the vertical sides of the multi-dimensional package. Hybrid systems of conventional multi-dimensional integrated circuits and multi-dimensional photonic integrated circuits also are provided.

Abstract: A molded semiconductor package includes a mold compound, a plurality of leads each having a first end embedded in the mold compound and a second end protruding from a side face of the mold compound, and a semiconductor die embedded in the mold compound and electrically connected, within the mold compound, to the plurality of leads. The second end of each lead of the plurality of leads has a bottom surface facing in a same direction as a bottom main surface of the mold compound. Each lead of the plurality of leads has a negative standoff relative to the bottom main surface of the mold compound.

Abstract: The present invention provides a package structure and a method for manufacturing the same. The package structure includes at least two electrical elements, a second reconstruction layer, and a metal lead frame, wherein at least one of the electrical elements is a chip, at least one of the electrical elements has a first reconstruction layer, and the second reconstruction layer has a smaller pin pitch than that of the metal lead frame; the second reconstruction layer has a first surface and a second surface, a functional surface of the electrical element is disposed on and connected to the first surface, and at least one of the electrical elements is connected to the second reconstruction layer; and the second surface is disposed on and connected to the metal lead frame. A fan-out package structure is formed on the metal lead frame, which improves the heat dissipation capacity of the chip.

Abstract: A semiconductor package includes a first die. The first die has a first side and a second side different from the first side and includes a first seal ring. The first seal ring includes a first portion at the first side and a second portion at the second side, and a width of the first portion is smaller than a width of the second portion.

Abstract: An assembly structure and a method for manufacturing the same are provided. The method for manufacturing the assembly structure includes providing a substrate defining an active region and a side rail surrounding the active region; and forming a frame structure on the side rail.

Abstract: A display device includes a substrate including a display area and a non-display area, a pixel located in the display area, a pad unit on one side of the non-display area, and a driver connected to the pixel. The pixel includes a first insulating layer, a first light emitting element on the first insulating layer, a second insulating layer on the first light emitting element and exposing one end portion and another end portion of the first light emitting element, a first contact electrode on the second insulating layer and connected to the one end portion of the first light emitting element, and a second contact electrode on the second insulating layer and connected to the other end portion of the first light emitting element. The pad unit includes a pad metal layer, a first pad insulating layer, a second pad insulating layer, and a pad electrode.

Abstract: Methods/structures of joining package structures are described. Those methods/structures may include a die disposed on a surface of a substrate, an interconnect bridge embedded in the substrate, and at least one vertical interconnect structure disposed through a portion of the interconnect bridge, wherein the at least one vertical interconnect structure is electrically and physically coupled to the die.

Abstract: A lead frame includes: a support portion having a through-hole formed in as end; a lead; and a heat dissipation plate welded with the support portion in one opening of the through-hole. A manufacturing method of a lead frame includes: shaping a frame member from a metal plate, the frame member including a support portion having a through-hole formed in an end, and a lead; and welding a heat dissipation plate with the support portion in one opening of the through hole.

Abstract: The semiconductor device includes first and second semiconductor elements. Each element has an obverse surface and a reverse surface, with a first electrode arranged on the reverse surface, and with a second electrode arranged on the obverse surface. The semiconductor device further includes: a first lead having an obverse surface and a reverse surface; an insulating layer covering the first lead, the first semiconductor element and the second semiconductor element; a first electrode connected to the second electrode of the first semiconductor element; and a second electrode connected to the first lead. The first semiconductor element and the first lead are bonded to each other with the reverse surface of the first semiconductor element facing the lead obverse surface. The second semiconductor element and the first lead are bonded to each other with the reverse surface of the second semiconductor element facing the lead reverse surface.

Abstract: A semiconductor device includes a circuit substrate, at least one semiconductor die, a first frame, and a second frame. The at least one semiconductor die is connected to the circuit substrate. The first frame is disposed on the circuit substrate and encircles the at least one semiconductor die. The second frame is stacked on the first frame. The first frame includes a base portion and an overhang portion. The base portion has a first width. The overhang portion is disposed on the base portion and has a second width greater than the first width. The overhang portion laterally protrudes towards the at least one semiconductor die with respect to the base portion. The first width and the second width are measured in a protruding direction of the overhang portion.

Abstract: A package structure includes an insulating encapsulation, at least one semiconductor die, a redistribution circuit structure, and first reinforcement structures. The at least one semiconductor die is encapsulated in the insulating encapsulation. The redistribution circuit structure is located on the insulating encapsulation and electrically connected to the at least one semiconductor die. The first reinforcement structures are embedded in the redistribution circuit structure. A shape of the package structure includes a polygonal shape on a vertical projection along a stacking direction of the insulating encapsulation and the redistribution circuit structure, and the first reinforcement structures are located on and extended along diagonal lines of the package structure.

Abstract: A packaged electronic device has a package structure, first leads, second leads and a tie bar. The package structure has a first side, a second side, a third side, a fourth side, a fifth side and a sixth side, the second side spaced from the first side along a first direction, the fourth side spaced from the third side along an orthogonal second direction, and the sixth side spaced from the fifth side along an orthogonal third direction. The first leads extend outward in a first plane of the second and third directions from respective portions of the third side, the second leads extend outward in the first plane from respective portions of the fourth side, and the tie bar is exposed along the fifth side in a second plane of the second and third directions, the second plane between the first plane and the first side.