Abstract: A plasma comprised of trifluorochloromethane and an oxidant etches non-insulating materials such as tungsten at very high etch rates when the oxidant comprises at least 50% of the plasma by volume.

Abstract: A method of fabricating a tapered via hole in a polyimide layer of an integrated circuit includes the steps of: disposing a layer of SiO.sub.2 on the polyimide layer and a layer of photoresist on the SiO.sub.2 such that the layers have an opening which exposes a region of the polyimide layer for the via hole; etching the exposed polyimide region partway through the polyimide layer, while simultaneously etching back the photoresist on the sidewalls of the opening to thereby uncover a strip of SiO.sub.2 adjacent to the perimeter of the exposed polyimide region; enlarging the exposed region of the polyimide by etching the uncovered strip of SiO.sub.2 ; and repeating the etching step and enlarging step a predetermined number of times.

Abstract: In a press for papermaking comprising in combination, a pair of elongated rollers arranged one to another to provide an adjustable elongated nip therebetween, each of the rollers comprising a substantially rigid elongated shaft and a substantially rigid elongated sleeve overlying and rotatably supported upon the elongated shaft, the respective shafts extending outboard of the respective sleeve to provide two pairs of parallel spaced shaft outboard portions, the improvement comprising, in the case of each roller, providing a circumferentially extending running fit between the outer surface of the shaft and the inner surface of the sleeve defining an elongated annular chamber extending lengthwise of the sleeve. Other embodiments are disclosed which include the shaft being tubular and pressurized, lubricant in the annular chamber and a cable system for urging the rollers together. A splashguard is also provided for preventing water on the surface of the rollers from rewetting the paper.

Abstract: Disclosed is a method of fabricating conductive polymer interconnect (CPI) material which employs chains of electrically conductive particles within an elastomeric matrix. Contact resistance is improved by removing a thin layer is elastomeric material which remains after normal processing. The surface layer is removed by plasma etching so that the conductive particles protrude at both surfaces. The protruding particles can be plated to replace any conductive material removed by the etch.

Abstract: The wafer processing boat of a plasma enhanced chemical vapor processor includes an R.F. connector at the inner end of its interleaved electrodes. The R.F. electrical connector includes slidably mated male and female portions for making R.F. electrical connection to the boat through the end wall of the evacuable furnace tube. A particle shield surrounds the mated male and female R.F. connector portions for confinement of particulates released during the mating of the connector. The shield includes an open end which faces downstream of the flow of processing gases to reduce backstreaming of particulates onto the wafers. The electrical male conductors of the connector are covered by a quartz sheath.

Abstract: The invention provides a physicochemical process for refining relatively rough metal surfaces to a condition of high smoothness and brightness, in relatively brief periods of time, which is characterized by the use of a non-abrasive, high-density burnishing media. The process can be carried out in one step and with minimal production of media fines, thus affording economic and environmental advantages.

Abstract: In a dry etching equipment, a variable gas mixture composition provides etch and ash simultaneously. For example, when a SiO.sub.2 /phospho silicate glass composite insulating layer with a respective thickness of about 300 and 600 nm masked by a patterned photoresist layer is to be etched, a CHF.sub.3 /O.sub.2 gas mixture may be used with the following steps:1. Dry etching the composite insulating layer in an RIE equipment by a plasma action in a gas mixture containing a fluorine compound and an oxidizer with a percentage of the oxidizer of about 10-20% to form a tapered hole having the desired slope in the top PSG insulating layer;2. Dry etching the composite layer in the gas mixture with a percentage of the oxidizer in the gas mixture of about 1-8% to transfer the desired slope from the PSG insulating layer to the bottom SiO.sub.2 insulating layer, wherein during this step the slope of the tapered hole in the PSG insulating layer has been modified; and then3.

Abstract: A method for improving the adhesion of a polymer such as an epoxy resin to an electrolytic copper surface wherein the copper surface to be adhered is exposed to gas plasma containing a fluorohydrocarbon.

Abstract: A filter device comprises a central tube, a housing enclosing the central tube and defining an internal chamber therewith, and a filter body within the internal chamber. The central tube includes a plug between the inlet and outlet which directs the fluid to flow from the inlet through the filter body and out through the outlet. The housing and filter body are mounted for sliding movement axially of the central tube from a normal filtering position wherein the housing inlet communicates with the upstream side of the filter body, to a back-flushing position wherein the inlet communicates with the downstream side of at least a portion of the filter body. The housing may also include a valve member moved therewith under differential pressure between the housing inlet and outlet to regulate the pressure at the outlet.

Abstract: A method of making a safety vent in an hermetically sealed electro-chemical container device and a novel container portion including such safety vent comprising a unique series of steps including printing a preselected area of the container portion with a masking resist pattern having an uncovered planar area of preselected geometric configuration corresponding to a safety vent area for the container portion and etching the uncovered area to a preselected uniform material thickness to provide a safety vent in the container portion capable of withstanding a preselected pressure before profound and instantaneous rupture.

Abstract: An instrumented test hammer for use in vibrationally exciting a test object includes a head assembly having an impact tip and a transducer operatively arranged to sense the force of an impact between the tip and object and to convert such sensed force into a proportional electrical signal, a handle extending away from the head assembly, and a cushioned grip surrounding a portion of the handle at a location spaced from the head assembly. The hammer is "tuned", by proper selection of the grip material and by selection of the ratio of the total mass of the head assembly to the combined mass of the handle and grip, such that the node of the first translational resonant mode of the hammer, after impacting against an object, is located substantially proximate the head assembly, independently of the manner by which the grip is held. The improved hammer substantially avoids the generation of spurious electrical signals due to post-impact vibration of the head assembly.

Abstract: A method for self-aligning an isolation structure to a diffusion region. A first masking layer is formed on a semiconductor substrate, the first masking layer having at least one aperture sidewall which is substantially perpendicular to the semiconductor substrate. Dopant ions are implanted into the semiconductor substrate through the first masking layer to form a doped region. Sidewall spacers are then defined on the sidewalls of the aperture, and a sidewall image reversal process is carried out such that the sidewall spacers define trench apertures in a masking structure. Finally, isolation trenches are etched into the semiconductor substrate through the masking structure. Alternatively, the implantation step is carried out after the sidewall spacers are defined on the first masking layer.

Abstract: In fractionating a gaseous mixture, e.g. an acid gas and hydrocarbon, in a column wherein, during distillation, components of the gaseous mixture tend to form a substantially azeotropic mixture, or at least one of the components of the gaseous mixture tends to freeze out, withdrawing a side stream fluid from the column during fractionation, and separating said side stream fluid, e.g. by membranes or scrubbing, so as to remove preferentially at least a portion of one of the components of the substantially azeotropic mixture, or of the at least one of the components tending to freeze out, and recycling resultant depleted side stream to said fractionating column.

Abstract: The present invention is generally directed to an improved process and apparatus for the production of gaseous products such as ammonia by catalytic, exothermic gaseous reactions and is specifically directed to an improved process which utilizes a gas-phase catalytic reaction of nitrogen and hydrogen for the synthesis of ammonia. This improved process for the production of ammonia utilizes an ammonia converter apparatus designed to comprise at least two catalyst stages and a reheat exchanger so arranged as to provide indirect heat exchange of the gaseous effluent from the last reactor catalyst stage with the effluent from at least one other reactor catalyst stage having a higher temperature level in order to reheat the effluent from the last reactor catalyst stage prior to exiting the reactor vessel, thereby facilitating higher level heat recovery from the reactor effluent.

Abstract: A method of chemically etching TiW and/or TiWN is described wherein the etching of a semiconductor substrate having a layers of TiWN, TiW and Au disposed between the substrate and a Au bump is performed with a 30% solution of hydrogen peroxide (H.sub.2 O.sub.2) at a temperature of approximately 90.degree. C.

Abstract: A process for fabricating semiconductor integrated circuits which include active regions having well defined mesa structures which maintain their size during processing. Mesa structures are formed in the top portion of a semiconductor substrate, and an insulating layer is formed on the top portion of the semiconductor. Active regions are defined in the semiconductor substrate which include the mesa regions where active devices are to be formed, the remaining regions of the semiconductor substrate being non-active regions. Photoresist is selectively applied on the insulating layer over the non-active regions to maintain exposed insulating layer portions over the mesa structures. The photoresist and the exposed insulating layer portions are etched to thin or remove the exposed insulating layer portions while maintaining the thickness of the covered insulating portions.

Abstract: Boards coated with electroless plated copper to a thickness of less than 0.1 mil are achieved by stripping completely the copper from commercially available boards with copper cladding of about 0.7 mil thickness, treating the stripped board with a ceric sulphate solution and then electroless plating of the copper to the desired thickness in conventional manner.

Abstract: A separator for removing water from a lower density liquid fuel has a generally circular cross-section container with co-axual downwardly open outlet conduit that includes a portion widening towards the bottom entry opening. An inlet above the widening portion of the conduit directs a liquid flow obliquely downwards and radially offset from the conduit to generate a rotational flow promoting separation of the denser water fraction from the fuel. Smaller water droplets that drift down the outer surface of the outlet conduit because they are less influenced by centrifugal forces, are collected in an upturned lip at the bottom edge of the conduit. There they coalesce into larger drops that can fall through the outlet flow to the bottom of the container. A shield in the container lower region limits the entrainment of remaining smaller droplets from that lower region into the outlet flow.

Abstract: A polycide etch process using a SiCl.sub.4 :HCl reactive gas flow rate ratio of at least about 1:1 for etching the polysilicon without etching, notching or degrading the overlying silicide. Thus, after patterning the silicide using a photoresist mask, the silicide can be used as the mask for etching the polysilicon, thereby providing precise pattern transfer to the polysilicon, independent of photoresist degradation. Also, a thinner, more precisely patterned photoresist mask can be used.

Abstract: A process for the separation of phosphate minerals from a phosphate-carbonate ore, by flotation, wherein a phenol polymer such as a resol or a novolak, which improves the yield and selectivity of the phosphate minerals with respect to the carbonate minerals, is used in addition to a collector agent in the flotation.