Abstract: A method of removing chloride ions in preference to oxidized sulfur ions, in particular sulfate or thiosulphate ions from a process solution containing either or both, or sulfide ions which are first oxidized to sulfate or thiosulphate ions. The method utilizes an electrochemical reactor having an anode and a cathode, disposed in respective anode and cathode compartments, separated by an ion selective separator, typically an anion exchange membrane. The process solution acts as the catholyte and is placed or flowed through the cathode chamber while simultaneously, an electrically conducting anolyte is placed or flowed through the anode chamber. A sufficient current density is maintained between the anode and the cathode, which at any time is not substantially greater than, and is preferably equal to, that which corresponds to the maximum chloride flux through the reactor membrane at the time.

Abstract: An apparatus is disclosed for producing a vitric solid solution comprising mainly the solid content of a radioactive waste solution of sodium borate discharged from a pressurized water reactor, the apparatus comprising a waste solution feed tank equipped with a hopper for stabilizing agent in water, a thin film evaporator, a heating type dehydrator, a powder drier connected with a microwave generator through a microwave guide tube and equipped with a stirrer, and a melting furnace connected with a microwave generator through a microwave guide tube, the above units being combined by pipes or a powder-transferring means.

Abstract: Photoresist apertures having tapered sidewalls can be provided by first opening the aperture in accordance with ordinary practice followed by the exposure of the photoresist to a suitable energy source such as a flood exposure to wideband light, the heating of the photoresist to round the peripheral edges of the aperture and the exposure of the thus pretreated photoresist to an environment which removes photoresist from the inside wall of the aperture until the desired tapered profile is obtained. In the preferred practice of the invention, the pretreated photoresist is removed from the inside wall of the aperture through exposure to a dry oxygen plasma etch.

Abstract: A method of planarizing a semiconductor layer by use of a plasma etch step which also etches vias having a tapered profile is made possible by selecting a conformal layer preferably of a different material than the material through which the via is to be provided such that a plasma etch will establish differing etch rates in the conformal and underlying layers.

Abstract: A starting solution is concentrated to a desired end solution by contacting the starting solution with a gaseous medium under the conditions that the heat content of the starting solution in contact with the gaseous medium is smaller than the heat content of the medium, and the duration of contacting is such that most of the solution that evaporates does so under conditions of constant enthalpy. When the starting solution is a brine, and the gaseous medium is air whose relative humidity is less than the relative humidity at the air/brine interface, the brine can be sprayed into the air to form a shower of droplets within which heat and vapor transfer take place during the transit time of the droplets in the air. When the ratio of droplets to air is sufficiently small, the heat content of the droplets is much smaller than the heat content of the air.

Abstract: A colorimetric reagent formulation is disclosed for the determination of the ferric iron content of serum. The formulation consists of two aqueous solutions. One solution, acting as chromogenic reagent, consists of a buffer, a soluble salt of an alkali or alkaline earth metal, chromazurol S in acidic form, and either a cationic or nonionic surfactant. The other solution, acting as masking reagent, consists of a complexing agent and if desired the same components of the chromogenic reagent, which are able to prevent the formation of the complex between the chromazurol S, the surfactant and the iron. The complexing agent consists of a polycarboxylic organic acid or salt thereof.

Abstract: The present invention discloses a method of forming fine conductive lines, patterns, and connectors, and is particularly useful in the formation of electronic devices. The method comprises a series of steps in which: a polymeric material is applied to a substrate; the polymeric material is patterned to form openings through, spaces within, or combinations thereof in the polymeric material; subsequently, conductive material is applied to the patterned polymeric material, so that it at least fills the openings and spaces existing in the polymeric material; and excess conductive material is removed from the exterior major surface of the polymeric material using chemical-mechanical polishing, to expose at least the exterior major surface of the polymeric material.

Abstract: Preparation of granules by making nuclei grow, in a fluidized bed, by causing a liquid material to solidify thereon. The liquid material is sprayed in the bed upwards, with the aid of a spraying device provided with a central channel through which the liquid material is supplied, and a channel concentric therewith carrying a powerful gas stream, with the liquid material contacting the gas stream and being carried with the gas stream to a dilute zone where the growth of the nuclei takes place, which zone is created by the gas stream and is completely within the fluidized bed. The liquid material is made to come out of the central channel as a virtually closed, conical film, with a thrust exceeding the thrust of the gas stream, and this film is nebulized to very fine droplets with the aid of the gas stream.In this process a very small amount of high-energetic gas is needed, while no agglomeration occurs in the bed.

Abstract: A motorized shower head mechanism is disclosed in which a housing is provided with a track and a trolley, and a motor mounted on the trolley. The trolley is moved along the track by the motor and a shower head which extends through the housing is carried along by the trolley.

Abstract: The invention concerns a process for automatically regenerating copper chloride etch solutions, wherein regeneration is effected by means of hydrogen peroxide and hydrochloric acid in a regeneration unit separated from the etch chamber. The addition of hydrogen peroxide is controlled by a redox electrode, while hydrochloric acid and water are added in computed quantities. Hydrogen peroxide and hydrochloric acid are converted in an oxidation reactor into hypochlorous acid and immediately afterwards are combined with the copper (I) chloride etch solution which contains at least the quantity of hydrochloric acid required for oxidizing the copper (I) ions. In the regeneration unit a salt basket with solid sodium chloride is arranged or adjacent to said unit a salt tank with an overflow to said regeneration unit is provided, both of which permit the sodium chloride concentration of the etch solution being kept constant.

Abstract: A method of planarizing the surface of a semiconductor device comprising a substrate carrying on its surface a contact configuration, which method essentially consists in that the following steps are successively carried out:(a) depositing a silicon nitride layer,(b) depositing a lacquer layer, whose free surface is substantially flat,(c) progressively attacking by plasma the lacquer layer until the farthest projecting parts of the silicon nitride layer are completely exposed, the complete appearance of these farthest projecting parts being detected by recording the intensity variations of an emitted jet of nitrogen,(d) attacking simultaneously by plasma the silicon nitride layer and the remaining lacquer until the contact configuration completely appears.

Abstract: For providing semiconductor zones (16, 18, 26) and contact metallization (19, 27) within an opening (9) in a self-registered manner, which opening is provided along its edge with polycrystalline connection parts (10) separated by an insulating material (15) from the metallization (19, 27), a protective layer (11) is formed which is maintained within the opening (9)until within this opening (9) the connection parts (10) are formed by anisotropic etching from a uniform layer of polycrystalline semiconductor material (10). The method is suitable for the manufacture of both bipolar transistors and field effect transistors.

Abstract: A composite printed circuit board structure including multiple layers of graphite interleaved with layers of a dielectric material, such as a polytetrafluoroethylene (PTFE) and woven glass laminate. Some of the dielectric layers are copper clad, and at least some of the graphite layers are positioned in close proximity to the copper cladding layers, to provide good heat dissipation properties. The PTFE provides a desirably low dielectric constant and the graphite also provides good mechanical strength and a low or negative coefficient of thermal expansion, to permit matching of the coefficient with that of chip carriers used to mount components on the circuit board.

Abstract: A system for performing one semiconductor manufacturing operation or sequence of operations with reduced particulate contamination. A vacuum-tight wafer carrier, which contains numerous wafers in vacuum in a sealed box, is placed into a platform inside a vacuum load lock. The platform contains slots and protruding fingers to provide accurate registration of the position of the wafer carrier. After the load lock is pumped down, the door of the wafer carrier is opened, and a transfer arm removes wafers from the wafer carrier, in any desired order, and transfers them one by one through a port into a processing chamber.

Abstract: A process for the separation of phosphate minerals from a phosphate-carbonate ore, by flotation, wherein a phenol polymer such as a resol or a novolak, which improves the yield and selectivity of the phosphate minerals with respect to the carbonate minerals, is used in addition to a collector agent in the flotation.

Abstract: A method for producing a semiconductor light emitting device wherein a contact layer of InGaAsP is formed on a semiconductor layer, including forming the InGaAsP contact layer on the semiconductor layer; subsequently, forming an InP cover layer on the contact layer; cleaning the surface of the InP cover layer by a solution which selectively melts indium; and removing the InP cover layer by a selective etching process.

Abstract: A safety system and method, for use with apparatus having a conductive member where the apparatus changes the attitude and/or altitude of the conductive member during the operation of the apparatus, includes an antenna mounted on the conductive member which senses an electric field and provides an AC signal representative of the strength of the electric field. The peaks of the AC signal are averaged over several cycles to provide an average peak signal. A reference signal circuit derives the reference signal from either the average peak signal prior to the change in the member's attitude and/or altitude or while the member's attitude and/or altitude is changing. A control device connected to the averaging circuit and to the reference signal circuit prevents further changing of the conductive member's attitude and/or altitude in accordance with the average peak signal and the reference signal when the electric field strength is greater than a safe value.

Abstract: Disclosed is an improved process wherein coal particles are beneficiated by froth flotation under coal froth flotation conditions to separate the desired coal particles from remaining unwanted ash and like gangue material. The improvement of the present invention comprises conducting the froth flotation in the presence of an effective proportion of a hydrophobic, non-ionc promoter which is a C.sub.12 -C.sub.30 fatty alcohol or its C.sub.3 or higher alkoxylated derivative.

Abstract: Apparatus and method steps for collecting sub-micron sized particles include a collection chamber and cryogenic cooling. The cooling is accomplished by coil tubing carrying nitrogen in liquid form, with the liquid nitrogen changing to the gas phase before exiting from the collection chamber in the tubing. Standard filters are used to filter out particles of diameter greater than or equal to 0.3 microns; however the present invention is used to trap particles of less than 0.3 micron in diameter. A blower draws air to said collection chamber through a filter which filters particles with diameters greater than or equal to 0.3 micron. The air is then cryogenically cooled so that moisture and sub-micron sized particles in the air condense into ice on the coil. The coil is then heated so that the ice melts, and the liquid is then drawn off and passed through a Buchner funnel where the liquid is passed through a Nuclepore membrane.

Abstract: Disclosed is an improved process wherein coal particles are beneficiated by froth flotation under coal froth flotation conditions to separate the desired coal particles from remaining unwanted ash and like gangue material. The improvement of the present invention comprises conducting the froth flotation in the presence of an effective proportion of a hydrophobic, non-ionic promotor which is a C.sub.10 -C.sub.30 nitrile or polynitrile thereof.