Abstract: Provided is a seal member according to embodiments. The seal member is disposed between an upper electrode and a backing plate in an etching apparatus to seal a gap between the upper electrode and the backing plate. In addition, the seal member is configured to include a high heat conductivity member having a heat conductivity higher than that of a first member formed by using siloxane bond and a low resistance member having a resistivity lower than that of the first member.

Abstract: An apparatus for an etching process includes a chamber, a plasma generator disposed in the chamber, a stacked structure disposed in the chamber to support a substrate thereon and including an electrode plate and an insulation coating layer on the electrode plate, electrode rods inserted into through holes of the stacked structure to penetrate through the stacked structure, directly contacting the substrate and spaced apart from sidewalls of the through holes of the stacked structure, at least one DC pulse generator generating a DC pulse to the electrode plate and the electrode rods, first connection lines connecting the DC pulse generator to the electrode rods, and at least one second connection line connecting the DC pulse generator to a lower portion of the electrode plate.

Abstract: A device for cleaning a bevel edge of a semiconductor substrate. The device includes: a lower support having a cylindrical top portion; a lower plasma-exclusion-zone (PEZ) ring surrounding the outer edge of the top portion and adapted to support the substrate; an upper dielectric component opposing the lower support and having a cylindrical bottom portion; an upper PEZ ring surrounding the outer edge of the bottom portion and opposing the lower PEZ ring; and at least one radiofrequency (RF) power source operative to energize process gas into plasma in an annular space defined by the upper and lower PEZ rings, wherein the annular space encloses the bevel edge.

Abstract: An apparatus and a method for depositing materials, and more particularly a vapor deposition chamber configured to deposit a material during a plasma-enhanced process are provided. In one embodiment a chamber comprises a chamber body defining a process volume, a substrate support disposed in the process volume and configured to support one or more substrates, a process lid assembly disposed over the substrate support, wherein the process lid assembly has a plasma cavity configured to generate a plasma and provide one or more radical species to the process volume, a RF (radio frequency) power source coupled to the gas distribution assembly, a plasma forming gas source coupled with the process lid assembly, and a reactant gas source coupled with the process lid assembly.

Abstract: Provided are a plasma processing apparatus and a plasma processing method wherein particles generated due to the inner potential of an inner cylinder disposed inside of a vacuum container are reduced. The plasma processing apparatus has, inside of a metal vacuum chamber (11), the inner cylinder (15) composed of a surface-alumited aluminum, disposes a substrate in a plasma diffusion region, and performs plasma processing. A plurality of protruding portions (15a) in point-contact with the vacuum chamber (11) are provided on the lower end portion of the inner cylinder (15), the alumite film (16) on the leading end portion (15b) of each of the protruding portion (15a) is removed, and the inner cylinder and the vacuum chamber (11) are electrically connected to each other.

Abstract: The disclosure pertains to a capactively coupled plasma source in which VHF power is applied through an impedance-matching coaxial resonator having a folded structure and symmetrical power distribution.

Abstract: An apparatus for etching an etch layer formed on a substrate is provided. A first photoresist (PR) mask with first mask features is provided on the etch layer. The apparatus performs a process for providing a protective coating on the first PR mask. The process includes at least one cycle. Each cycle includes (a) a deposition phase for depositing a deposition layer over the surface of the first mask features using a deposition gas, and (b) a profile shaping phase for shaping the profile of the deposition layer using a profile shaping gas. A liquid PR material is applied over the first PR mask having the protective coating. The PR material is patterned into a second mask features, where the first and second mask features form a second PR mask. The etch layer is etched though the second PR mask.

Abstract: A capacitively coupled plasma reactor comprising a processing chamber, a first electrode, a second electrode and a thermoelectric unit. The processing chamber has an upper portion with a gas inlet and a lower portion, and the upper portion is in fluid communication with the lower portion. The first electrode has a front side and a backside and is positioned at the upper portion of the processing chamber. The second electrode is positioned in the lower portion of the processing chamber and is spaced apart from the front side of the first electrode. The thermoelectric unit is positioned proximate to the backside of the first electrode and is capable of heating and cooling the first electrode.

Abstract: A method for detecting plasma unconfinement in a reaction chamber during a bevel edge cleaning operation is provided. The method initiates with selecting a wavelength associated with expected by products of a bevel edge clean process. The method includes cleaning the bevel edge area of a substrate and monitoring the intensity of the selected wavelengths during the cleaning for deviation from a threshold wavelength intensity. The cleaning is terminated if the deviation from the threshold wavelength intensity exceeds a target deviation.

Abstract: A vapor deposition reactor may include a first electrode including a first channel and at least one first injection hole connected to the first channel. a second electrode electrically separated from the first electrode, and a power source for applying power between the first electrode and the second electrode to generate plasma from a reactant gas between the first electrode and the second electrode. Also provided is a method for forming thin film using the vapor deposition reactor.

Abstract: An arcless, atmospheric-pressure plasma generating apparatus capable of producing a large-area, temperature-controlled, stable discharge at power densities between about 0.1 W/cm3 and about 200 W/cm3, while having an operating gas temperature of less than 50° C., for processing materials outside of the discharge, is described. The apparatus produces active chemical species, including gaseous metastables and radicals which may be used for polymerization (either free radical-induced or through dehydrogenation-based polymerization), surface cleaning and modification, etching, adhesion promotion, and sterilization, as examples. The invention may include either a cooled rf-driven electrode or a cooled ground electrode, or two cooled electrodes, wherein active components of the plasma may be directed out of the plasma and onto an external workpiece without simultaneously exposing a material to the electrical influence or ionic components of the plasma.

Abstract: Vacuum treatment installation particularly for plasma coating workpieces has an arrangement for boosting and/or igniting a glow discharge plasma for the treatment of workpieces, and at least one hollow body of electrically conductive material, the hollow body including a hollow space and at least one entrance opening through which charge carriers flow in order to make possible ignition and operation of a plasma or to boost an existing plasma.

Abstract: An improved upper electrode system has a multi-part electrode in which a central portion of the electrode having high wear is replaceable independent of an outer peripheral portion of the electrode. The upper electrode can be used in plasma processing systems for processing semiconductor substrates, such as by etching or CVD. The multi-part upper electrode system is particularly useful for large size wafer processing chambers, such as 300 mm wafer processing chambers for which monolithic electrodes are unavailable or costly.

Abstract: At the time of plasma igniting or during plasma processing, only optimizing the distance between electrodes in each case caused a limitation to the prevention of charging damage. To resolve this, a novel plasma processing method employs a plasma processing apparatus which includes an upper electrode to which first high-frequency power is applied, a lower electrode to which second high-frequency power is applied, and a lift mechanism for controlling the spacing between the upper and lower electrodes. The first high-frequency power is applied to the upper electrode to cause plasma igniting. The method is adapted to make the spacing between the upper and lower electrodes larger at least at the time of plasma extinction than during plasma processing of a wafer on the lower electrode.

Abstract: Disclosed is a substrate processing apparatus, including: a processing chamber to accommodate a plurality of substrates therein in such a way that the substrate are vertically stacked; a gas supply system to supply processing gas into the processing chamber; an exhaust system to exhaust an atmosphere from the processing chamber; at least a pair of electrodes made of flexible member extending in a stacking direction of the substrates to activate the processing gas; and protecting tubes to accommodate the electrodes therein, wherein each of the protecting tubes is provided with a bent portion at a higher position than an uppermost substrate, and a tip end of each of the electrodes is located on a tip end side of each of the protecting tubes over the bent portion.

Abstract: The plasma processing apparatus includes: a processing chamber an inside of which is airtightly closable; a process gas supplying mechanism which supplies a process gas into the processing chamber; an exhaust mechanism which evacuates the inside of the processing chamber; a plasma generating mechanism which generates plasma from the process gas; a holding stage which is provided in the processing chamber and configured such that a substrate to be processed and a focus ring provided to surround the substrate to be processed are held on a same plane; a temperature control mechanism which adjusts a temperature of the holding stage; and an electrostatic chuck which is provided on a top surface of the holding stage and comprises an adsorbing electrode extending to a portion under the focus ring.

Abstract: An apparatus for controlling gas flow conductance in a plasma processing chamber being configured with an upper electrode disposed opposite a lower electrode adapted to support a substrate is provided. The apparatus includes a ground ring configured to include a first set of radial slots formed therein. The apparatus also includes a confinement ring arrangement which includes at least a first set of collapsible confinement rings and a second set of collapsible confinement rings which is configured to movably couple to the first set of collapsible confinement rings. The apparatus further includes a mechanism configured at least to collapse and to expand the first set of collapsible confinement rings and the second set of collapsible confinement rings to control gas flow conductance through the first set of radial slots between (a) an unobstructed gas flow, ON state, and (b) an obstructed gas flow, OFF state.

Abstract: A system and method for controlling plasma. The system includes a semiconductor chamber comprising a powered electrode, another electrode, and an adjustable coupling to ground circuit. The powered electrode is configured to receive a wafer or substrate. There is at least one grounded electrode configured to generate an electrical connection with the powered electrode. At least one of the grounded electrodes is electrically coupled to the adjustable coupling to ground circuit. The adjustable coupling to ground circuit is configured to modify the impedance of the grounded electrode. The ion energy of the plasma is controlled by the adjustable coupling to ground circuit.

Abstract: A showerhead electrode and assembly useful for plasma etching includes cam locks which provide improved thermal contact between the showerhead electrode and a backing plate. The cam locks include cam shafts in the backing plate which engage enlarged heads of studs mounted on the showerhead electrode. The assembly can include an annular shroud surrounding the showerhead electrode and eight of the cam shafts in the backing plate can be operated such that each cam shaft simultaneously engages a stud on the annular shroud and a stud in an outer row of studs on the showerhead electrode. Another eight cam shafts can be operated such that each cam shaft engages a pair of studs on inner and middle rows of the studs mounted of the showerhead electrode.

Abstract: The plasma processing apparatus includes a plasma chamber, a first electrode, a second electrode, and a plasma containment device. The plasma containment device has a plurality of slots and is electrically coupled to the first electrode. The containment device is configured to confine plasma within an inter-electrode volume while facilitating maximum process gas flow. When plasma is generated by applying electric fields to process gas within the inter-electrode volume, the containment device electrically confines the plasma to the inter-electrode volume without significantly restricting the flow of gas from the inter-electrode volume.