Abstract: An overlay correction method for improving an overlay parameter of an ultra-high order component includes: obtaining misalignment components of an overlay through measurement; converting the misalignment components into overlay parameters; applying a conversion logic between the overlay parameters; converting the overlay parameters into aberration input data; and performing an exposure process by applying the aberration input data to an exposure machine, wherein the overlay parameters are divided into a first overlay parameter shifting in a first direction that is an extending direction of a slit, and a second overlay parameter shifting in a second direction that is perpendicular to the first direction, and the performing of the exposure process includes correcting the first and second overlay parameters including a higher-order component of a 3rd order or greater with respect to a location of the slit in the first direction.

Abstract: Display panels and array substrates are provided. The array substrate includes a first base, a first metal layer disposed on the first base and including scanning lines, a second metal layer disposed on the first metal layer and including data lines, a third metal layer disposed on the second metal layer and including pixel electrodes, and a fourth metal layer disposed between the third metal layer and the second metal layer. The fourth metal layer includes a transparent shielding electrode in which at least one repair hole is formed. An orthographic projection of the repair hole on the first base overlaps a part of an orthographic projection of at least one of the data lines and the scanning lines on the first base.

Abstract: An integrated circuit device includes a substrate having an active region, a word line extending in the substrate in a first horizontal direction, a bit line extending on the word line in a second horizontal direction, a bit line contact electrically connecting the bit line to the active region, a doping contact connecting the bit line contact to the active region, a cell pad having a horizontal width greater than that of the active region, a buried contact that digs into one side wall of the cell pad, and a conductive landing pad facing the bit line in the first horizontal direction. The doping contact includes a first doping contact and a second doping contact, and a thickness of the first doping contact in the vertical direction is less than that of the second doping contact in the vertical direction.

Abstract: A semiconductor chiplet device includes a first die, a second die, a decoupling circuit and an interposer. The interposer includes a plurality of power traces and a plurality of ground traces. The first die and the second die are arranged on a first side of the interposer according to a configuration direction, and are coupled to the power traces and the ground traces. The decoupling circuit is arranged on a second side of the interposer, and is coupled to the power traces and the ground traces. The power traces and the ground traces are staggered with each other, and an extending direction of the ground traces and the power traces is the same as the configuration direction.

Abstract: A layered semiconductor device comprising a compound, the compound comprising a silicon-oxygen backbone and at least one fluorine-containing moiety attached to the silicon-oxygen backbone. The compound may comprise a unit represented by: formula (I) wherein R and R? each independently represents at least one of: substituted or unsubstituted alkyl, substituted or unsubstituted fluoroalkyl, substituted or unsubstituted alkoxy, substituted or unsubstituted fluoroalkoxy, substituted or unsubstituted siloxy, or substituted or unsubstituted fluoroalkylsiloxy, substituted or unsubstituted cycloalkyl, substituted or unsubstituted fluorocycloalkyl, substituted or unsubstituted aryl, substituted or unsubstituted fluoroaryl, or substituted or unsubstituted heteroaryl; and wherein at least one of R and R? is the fluorine-containing moiety.

Abstract: A flexible substrate, a method of manufacturing thereof, and display panel are provided. The flexible substrate includes a glass substrate, a first flexible base layer disposed on the glass substrate, a second flexible base layer disposed on the first flexible base layer, and a third flexible base layer disposed on the second flexible base layer.

Abstract: A display device includes a first electrode and a second electrode, spaced apart from each other, and light emitting elements disposed between the first electrode and the second electrode. Each of the light emitting elements includes a first semiconductor layer, a second semiconductor layer disposed on the first semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer. A thickness of the active layer is in a range of about 1 nm to about 2.8 nm, the active layer includes InGa1-xN (about 0.18?x?about 0.20). The light emitting elements emit light with a wavelength in a range of about 462 nm to about 472 nm in a current density in a range of about 0.5 A/cm2 to about 100 A/cm2.

Abstract: A light-emitting element includes a first electrode, a second electrode, a first light-emitting layer and a second light-emitting layer provided between the first electrode and the second electrode and including the same quantum dots, and an intermediate layer provided between the first light-emitting layer and the second light-emitting layer.

Abstract: The present invention relates to a color conversion device (100).

Abstract: A transparent OLED substrate, a transparent display panel, an array substrate, a display screen, and a display device. The transparent OLED substrate includes a base substrate, a driving circuit layer formed on the base substrate; and a light emitting functional film layer formed on the driving circuit layer. The driving circuit layer includes a plurality of first driving circuit units, the plurality of first driving circuit units each include a storage capacitor and a first transistor, the storage capacitor includes a first electrode plate and a second electrode plate. The driving circuit layer further includes a first conductive layer, a part of the first conductive layer is performed as the first electrode plate and other part is performed as a gate electrode of the first transistor.

Abstract: A semiconductor device includes a first metal layer including a plurality of first ground wire pairs alternating with a plurality of first power wire pairs and a second metal layer including a plurality of second ground wire pairs alternating with a plurality of second power wire pairs. A metal-insulator-metal capacitor (MIMCAP) is between the first metal layer and the second metal layer. A group of ground vias connects a pair of the first ground wire pairs with a pair of the second ground wire pairs. The group of ground vias can also connect to a ground plate of the MIMCAP. A group of power vias connects a pair of the first power wire pairs with a pair of the second power wire pairs. The group of power vias can also connect to a power plate of the MIMCAP. Various other methods and systems are also disclosed.

Abstract: A method for manufacturing an EL element, includes: a first quantum dot layer forming step of forming a quantum dot layer containing first quantum dots; a first quantum dot layer coating step of exposing a first portion included in the first quantum dot layer, and coating a second portion included in the first quantum dot layer, the first quantum dot layer coating step including: a photoresist layer forming step; and a photoresist layer patterning step; a solution supplying step of applying or spraying a solution only to or on the first portion, the solution containing first molecules each having a plurality of coordinating functional groups coordinatable with the first quantum dots and; a removing step of removing the second portion of the first quantum dot layer and the patterned photoresist layer, such that the first portion of the first quantum dot layer forms a first light-emitting layer.

Abstract: The present application provides a display panel and a display device. The display panel includes pixel driving circuits provided respectively corresponding to pixel regions and a photosensitive device provided corresponding to a photosensitive region between the pixel regions, wherein the display panel further includes: a substrate; a first metal layer provided on a side of the substrate, a first semiconductor layer disposed on a side of the first metal layer away from the substrate, a second semiconductor layer disposed on a side of the first semiconductor layer away from the substrate, and a third semiconductor layer disposed on a side of the second semiconductor layer away from the substrate. The first metal layer includes a shield portion provided corresponding to the pixel region and a reflection portion provided corresponding to the photosensitive region.

Abstract: A light-emitting device and an electronic apparatus including the light-emitting device. The light-emitting device includes a first electrode, a second electrode, and an interlayer arranged between the first electrode and the second electrode, the interlayer includes an emission layer, the emission layer includes one or more m1 hosts, a sensitizer, and a fluorescent emitter, where m1 is an integer of 1 or more, and when m1 is 2 or more, the two or more hosts are each different from the other, the one or more m1 hosts, the sensitizer, and the fluorescent emitter are different from each other, and Expression 1 is satisfied. 0 ? debye ? ? "\[LeftBracketingBar]" PDM ? ( S ) - PDM ? ( H ) ? "\[RightBracketingBar]" ? 3 ? debye Expression ? 1 Expression 1 is the same as described in the present specification.

Abstract: An upper surface of a main portion of a die pad includes a first region overlapping a semiconductor chip, a second region arranged between a side and the first region, and a third region arranged between the first region and a connecting portion. In the upper surface of the main portion, each of a second trench length of a second trench arranged in the second region and a third trench length of a third trench arranged in the third region is larger than a first trench length of a first trench arranged in the connecting portion. Each of a second trench width of the second trench arranged in the second region and a third trench width of the third trench arranged in the third region is smaller than a first trench width of the first trench arranged in the connecting portion.

Abstract: A display device and a method for manufacturing the same capable of mitigating light loss by comprising a substrate, an overcoat layer disposed on the substrate, a first electrode disposed on the overcoat layer, a reflective layer disposed on the overcoat layer to be spaced apart from the first electrode, a bank layer disposed on the first electrode and the reflective layer to cover en edge of the first electrode, a light emitting layer disposed on the first electrode, and a second electrode disposed on the light emitting layer and contacting an end of the reflective layer.

Abstract: According to one embodiment, a deposition device includes a stage, a deposition head opposed to the stage, and a chamber accommodating the stage and the deposition head. The deposition head comprises a deposition source heating a material and generating vapor, a nozzle connected to the deposition source to emit the vapor generated by the deposition source, a control plate comprising a sleeve surrounding the nozzle, and a movement mechanism moving the control plate along an extension direction of the sleeve.

Abstract: An organic electroluminescence device may include: an anode; a cathode; and an emitting layer disposed between the anode and the cathode. The emitting layer may include a delayed fluorescent compound M2, a compound M3 including a deuterium atom, and a fluorescent compound M1. The compound M1 may include a boron atom. The compound M3 does not have a partial structure of formula (1C) or (2C): Y41 to Y48 each independently being N, CR, or C bonded to another atom or another structure, at least one of Y41 to Y48 being N, at least one of Y41 to Y48 being C bonded to another atom or another structure, each R independently being H or a substituent. The singlet energy S1(M2) of the compound M2 and a singlet energy S1(M3) of the compound M3 may satisfy a relationship of a formula (1): S1(M3)>S1(M2)??(1).

Abstract: A quantum dot material includes: a quantum dot and a ligand for modifying the quantum dot. The ligand is coordinately bound to the quantum dot, has a photosensitive isomerization property, is a derivative of azobenzene, and contains a urea group and a pyrimidinone group.

Abstract: Embodiments of the present disclosure include an interconnect structure having a via contact coupled to a middle of line (MOL) contact, a bottom of the via contact being free of a tantalum liner. A metal line is connected to the via contact, an interface between a top of the via contact and the metal line being free of the tantalum liner, the via contact and the metal line comprising copper, the via contact and the metal line being encapsulated with a cobalt liner.