Abstract: A semiconductor device includes a first metal layer including a plurality of first ground wire pairs alternating with a plurality of first power wire pairs and a second metal layer including a plurality of second ground wire pairs alternating with a plurality of second power wire pairs. A metal-insulator-metal capacitor (MIMCAP) is between the first metal layer and the second metal layer. A group of ground vias connects a pair of the first ground wire pairs with a pair of the second ground wire pairs. The group of ground vias can also connect to a ground plate of the MIMCAP. A group of power vias connects a pair of the first power wire pairs with a pair of the second power wire pairs. The group of power vias can also connect to a power plate of the MIMCAP. Various other methods and systems are also disclosed.

Abstract: A method for manufacturing an EL element, includes: a first quantum dot layer forming step of forming a quantum dot layer containing first quantum dots; a first quantum dot layer coating step of exposing a first portion included in the first quantum dot layer, and coating a second portion included in the first quantum dot layer, the first quantum dot layer coating step including: a photoresist layer forming step; and a photoresist layer patterning step; a solution supplying step of applying or spraying a solution only to or on the first portion, the solution containing first molecules each having a plurality of coordinating functional groups coordinatable with the first quantum dots and; a removing step of removing the second portion of the first quantum dot layer and the patterned photoresist layer, such that the first portion of the first quantum dot layer forms a first light-emitting layer.

Abstract: A light-emitting device and an electronic apparatus including the light-emitting device. The light-emitting device includes a first electrode, a second electrode, and an interlayer arranged between the first electrode and the second electrode, the interlayer includes an emission layer, the emission layer includes one or more m1 hosts, a sensitizer, and a fluorescent emitter, where m1 is an integer of 1 or more, and when m1 is 2 or more, the two or more hosts are each different from the other, the one or more m1 hosts, the sensitizer, and the fluorescent emitter are different from each other, and Expression 1 is satisfied. 0 ? debye ? ? "\[LeftBracketingBar]" PDM ? ( S ) - PDM ? ( H ) ? "\[RightBracketingBar]" ? 3 ? debye Expression ? 1 Expression 1 is the same as described in the present specification.

Abstract: The present application provides a display panel and a display device. The display panel includes pixel driving circuits provided respectively corresponding to pixel regions and a photosensitive device provided corresponding to a photosensitive region between the pixel regions, wherein the display panel further includes: a substrate; a first metal layer provided on a side of the substrate, a first semiconductor layer disposed on a side of the first metal layer away from the substrate, a second semiconductor layer disposed on a side of the first semiconductor layer away from the substrate, and a third semiconductor layer disposed on a side of the second semiconductor layer away from the substrate. The first metal layer includes a shield portion provided corresponding to the pixel region and a reflection portion provided corresponding to the photosensitive region.

Abstract: An upper surface of a main portion of a die pad includes a first region overlapping a semiconductor chip, a second region arranged between a side and the first region, and a third region arranged between the first region and a connecting portion. In the upper surface of the main portion, each of a second trench length of a second trench arranged in the second region and a third trench length of a third trench arranged in the third region is larger than a first trench length of a first trench arranged in the connecting portion. Each of a second trench width of the second trench arranged in the second region and a third trench width of the third trench arranged in the third region is smaller than a first trench width of the first trench arranged in the connecting portion.

Abstract: According to one embodiment, a deposition device includes a stage, a deposition head opposed to the stage, and a chamber accommodating the stage and the deposition head. The deposition head comprises a deposition source heating a material and generating vapor, a nozzle connected to the deposition source to emit the vapor generated by the deposition source, a control plate comprising a sleeve surrounding the nozzle, and a movement mechanism moving the control plate along an extension direction of the sleeve.

Abstract: A display device and a method for manufacturing the same capable of mitigating light loss by comprising a substrate, an overcoat layer disposed on the substrate, a first electrode disposed on the overcoat layer, a reflective layer disposed on the overcoat layer to be spaced apart from the first electrode, a bank layer disposed on the first electrode and the reflective layer to cover en edge of the first electrode, a light emitting layer disposed on the first electrode, and a second electrode disposed on the light emitting layer and contacting an end of the reflective layer.

Abstract: An organic electroluminescence device may include: an anode; a cathode; and an emitting layer disposed between the anode and the cathode. The emitting layer may include a delayed fluorescent compound M2, a compound M3 including a deuterium atom, and a fluorescent compound M1. The compound M1 may include a boron atom. The compound M3 does not have a partial structure of formula (1C) or (2C): Y41 to Y48 each independently being N, CR, or C bonded to another atom or another structure, at least one of Y41 to Y48 being N, at least one of Y41 to Y48 being C bonded to another atom or another structure, each R independently being H or a substituent. The singlet energy S1(M2) of the compound M2 and a singlet energy S1(M3) of the compound M3 may satisfy a relationship of a formula (1): S1(M3)>S1(M2)??(1).

Abstract: A quantum dot material includes: a quantum dot and a ligand for modifying the quantum dot. The ligand is coordinately bound to the quantum dot, has a photosensitive isomerization property, is a derivative of azobenzene, and contains a urea group and a pyrimidinone group.

Abstract: Embodiments of the present disclosure include an interconnect structure having a via contact coupled to a middle of line (MOL) contact, a bottom of the via contact being free of a tantalum liner. A metal line is connected to the via contact, an interface between a top of the via contact and the metal line being free of the tantalum liner, the via contact and the metal line comprising copper, the via contact and the metal line being encapsulated with a cobalt liner.

Abstract: The reliability of a light-emitting device is improved. Provided is a light-emitting device including a light-emitting layer between a first electrode and a second electrode. The light-emitting layer contains a light-emitting substance and a first organic compound. A difference between a sum of energy of the first organic compound in a ground state and energy of an oxygen molecule in a ground state and energy of a transition state formed by the first organic compound and the oxygen molecule is greater than or equal to 1.84 eV. A difference between the energy of the transition state formed by the first organic compound and the oxygen molecule and energy of an oxygen adduct of the first organic compound in a ground state is less than or equal to 0.87 eV.

Abstract: Disclosed herein are a multi-level device which has a ternary characteristic and can reduce hysteresis, and a method of manufacturing the same. The multi-level device can have a plurality of turn-on voltages, that is, a plurality of threshold voltages, thereby providing multi-level conductivity as a ternary device characteristic. In addition, a double insulating layer made of a dielectric layer and an organic polymer layer is used as a separation layer for channel layer separation, and by removing the hysteresis due to a trap charge at an interface between a channel layer and an insulating layer, a uniform ternary characteristic can always be maintained, and by forming the channel layer on an organic polymer layer, the channel layer can be more stably formed on the insulating layer.

Abstract: A semiconductor memory device includes: a substrate including a first region and a second region, the first region includes a peripheral circuit and a first active region (FAR), and the second region includes memory cell blocks. The FAR includes a FAR first extension extending in a first direction, a FAR second extension extending in a second direction, and a FAR third extension extending in a third direction. The FAR first extension, the FAR second extension, and the FAR third extension form an angle greater than 90 degrees relative to one another. The device includes a first pass transistor circuit configured to transmit driving signals, and the first pass transistor circuit includes a FAR first gate structure on the FAR first extension, a FAR second gate structure on the FAR second extension, a FAR third gate structure on the FAR third extension, and a first shared source/drain.

Abstract: A method of operating an electronic device for detecting a defect due to a particle in an equipment generated during a bonding process of a semiconductor chip is disclosed. For example, the method may include obtaining, by the electronic device, profile data including operation information of the equipment from the equipment during the bonding process. Additionally, the method may include calculating, by the electronic device, characteristic data of bonded chips (e.g., from the bonding process) by pre-processing the profile data. Subsequently, after the bonding process is completed, the method may include selecting, by the electronic device, a coordinate of a defective chip on a substrate as a defect coordinate by comparing result data of a reference chip and peripheral chips based on the characteristic data. In some embodiments, the result data may include respective height value information of the bonded chips.

Abstract: A display substrate, a preparation method thereof, and a display apparatus, the display substrate includes a base substrate; a drive circuit layer provided on the base substrate; a light-emitting structure layer provided on a side of the drive circuit layer away from the base substrate, the light-emitting structure layer includes a pixel defining layer and an organic light-emitting layer, the pixel defining layer defines multiple sub-pixel regions and includes a first opening at least partially exposing the drive circuit layer, the organic light-emitting layer is located in the sub-pixel region and is overlapped with the first opening of the pixel defining layer; and a color film structure layer provided on a side of the light-emitting structure layer away from the base substrate, the color film structure layer includes a color film and a black matrix, the black matrix includes a second opening at least partially exposing the first opening.

Abstract: A method for producing a patterned organic film includes: forming a hydrophobic organic film on a hydrophilic and non-water-soluble first substrate using a coating method, pressing the organic film formed on the first substrate against a convex portion of a stamp having the convex portion and a concave portion, transferring the organic film to the convex portion by applying water or an aqueous solution to an interface between the first substrate and the organic film, and pressing the organic film transferred to the convex portion against a second substrate to transfer the organic film to the second substrate to obtain a patterned organic film, wherein at least one of the organic film and the second substrate is an organic semiconductor.

Abstract: Embodiments provide a light-emitting device including a first electrode, a second electrode facing the first electrode, m emitting units between the first electrode and the second electrode, and m-1 charge generation layers between adjacent ones of the m emitting units, wherein m is an integer of 3 or more, and the emitting units include a first emitting unit, a second emitting unit, and a third emitting unit. The first emitting unit includes a first-first host and a first-second host, the second emitting unit includes a second-first host and a second-second host, the third emitting unit includes a third-first host and a third-second host, and T1 values of hosts of at least one of a first emitting unit, a second emitting unit, and a third emitting unit are each smaller than T1 values of hosts of the other emitting units.

Abstract: A profiling and laminating device includes: a fixture, a carrier film, a first driving assembly and a second driving assembly. The fixture includes a first main surface, a curved transition surface and a second main surface that are connected in sequence, and the first main surface and the second main surface are located on two opposite sides of the fixture, respectively. A surface of the carrier film is used for carrying a flexible display panel, and another surface of the carrier film is used for covering at least the first main surface and the second main surface of the fixture. The first driving assembly is used for driving the fixture to move. The second driving assembly is used for driving the carrier film to move.

Abstract: A light-emitting substrate includes a substrate and a first light-emitting device. The first light-emitting device includes a first electrode, a first functional layer, a first light-emitting pattern and a second electrode that are sequentially disposed in a direction away from the substrate. The first functional layer is in contact with the first light-emitting pattern. The first light-emitting pattern includes a first light-emitting material. The first light-emitting material includes first light-emitting particles and first ligands combined with the first light-emitting particles. The first functional layer includes a first functional material. The first functional material includes first functional particles and second ligands combined with the first functional particles. A development characteristic of the first ligands is same as a development characteristic of the second ligands.

Abstract: Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly contact structures in LED chips for reducing voiding of bonding metals are disclosed. LED chips include active LED structures on carrier submounts and contact structures arranged to receive external electrical connections adjacent the active LED structures. Exemplary contact structures include contacts electrically coupled to active LED structures and dielectric structures beneath the contacts. Dielectric structures are arranged beneath portions of the contacts while still allowing electrical connections therethrough. Such dielectric structures may be provided as regions of dielectric material with spacings that control topography of underlying bonding metals to reduce voiding.