Abstract: A display apparatus includes: a display panel including a display area, and a pad area adjacent to the display area; and a circuit board attached to the pad area. The pad area includes at least one signal pad terminal electrically connected to a first signal line extending through the display area, and at least one dummy pad terminal spaced from the first signal line. The circuit board includes a signal lead terminal connected to the signal pad terminal, and a dummy lead terminal connected to the dummy pad terminal.

Abstract: A semiconductor device includes a drift layer, a channel layer, a source layer being the first conductivity type, a gate layer, a body layer, a shield layer and a drain layer. The channel is disposed on the drift layer. The source layer is disposed on a surface layer portion of the channel layer. The gate layer is arranged to be deeper than the source layer. The body layer is arranged to be deeper than the source layer. The shield layer is disposed at a portion of the channel layer between the gate layer and the drift layer. The shield layer is maintained at a potential different from a potential of the gate layer. The drain layer is disposed at a side opposite to the channel layer. A depth ratio of a depth of the gate layer to a depth of the body layer is equal to or larger than 0.45.

Abstract: A light-emitting element and an electronic apparatus capable of reducing the element area and realizing a stable electrical connection. A light-emitting element according to the present technology includes a first semiconductor layer, a light-emitting layer, and a second semiconductor layer laminated in this order, and a light-emitting surface, a non-light-emitting surface, and a side surface connecting the light-emitting surface and the non-light-emitting surface. The side surface is inclined. A first electrode is in a concave portion in the light-emitting surface at a periphery of the first semiconductor layer. A second electrode is on a non-light-emitting surface side of the laminate. A third electrode is on the non-light-emitting surface side of the laminate and is insulated from the second electrode. The side wiring electrically connects the first electrode and the third electrode via the side surface.

Abstract: Embodiments disclosed herein include transistor devices and methods of forming such transistor devices. In an embodiment a transistor comprises a substrate, and a fin that extends up from the substrate. In an embodiment, the fin comprises a source region, a drain region, and a channel region between the source region and the drain region. In an embodiment, the transistor further comprises and a cavity in the fin, where the cavity is below the channel region. In an embodiment, the transistor further comprises a gate stack over the fin.

Abstract: A flexible substrate, a method of manufacturing thereof, and display panel are provided. The flexible substrate includes a glass substrate, a first flexible base layer disposed on the glass substrate, a second flexible base layer disposed on the first flexible base layer, and a third flexible base layer disposed on the second flexible base layer.

Abstract: With respect to a display device having an external compensation function, a monitor time can be shortened without increasing the number of wiring lines. A pixel circuit in an i-th row and a j-th column includes an organic EL element (display element), a writing control transistor, a drive transistor, a monitor control transistor, and a holding capacitor. A control terminal of the drive transistor is connected to a data signal line S(j) in the j-th column via the write control transistor. The monitor control transistor includes a first conduction terminal connected to a second conduction terminal of the drive transistor, and a second conduction terminal connected to a data signal line S(j+1) in a (j+1)-th column.

Abstract: Provided are electronic devices and methods of manufacturing the same. An electronic device may include a substrate, a gate electrode on the substrate, a ferroelectric layer between the substrate and the gate electrode, and a carbon layer between the substrate and the ferroelectric layer. The carbon layer may have an sp2 bonding structure.

Abstract: Provided is an organic EL panel. A first conductive film, an organic functional film, a second conductive film, and a sealing film are provided on a substrate. The first conductive film includes a first main body, a first electrode pad, and a second electrode pad. The second conductive film includes a second main body, and a second electrode pad region extending from the second main body toward the first vertex. The second electrode pad region extends to a stretched region exposed from the sealing film which covers a light-emitting region. A first electrode conduction path surrounds at least half of the light-emitting region and connects the electrode pads. A circuit board is fixed near the first vertex. A first electrode wire is configured to adhere to the electrode pads. A second electrode wire is configured to adhere to the second electrode pad region in the stretched region.

Abstract: A display device with high resolution is provided. A display device with high display quality is provided. The display device includes a substrate, an insulating layer, a plurality of transistors, and a plurality of light-emitting diodes. The plurality of light-emitting diodes are provided in a matrix over the substrate. Each of the plurality of transistors is electrically connected to at least one of the plurality of light-emitting diodes. The plurality of light-emitting diodes are positioned closer to the substrate than the plurality of transistors are. The plurality of light-emitting diodes emit light toward the substrate. Each of the plurality of transistors includes a metal oxide layer and a gate electrode. The metal oxide layer includes a channel formation region. The top surface of the gate electrode is substantially level with the top surface of the insulating layer.

Abstract: A display panel, a manufacturing method thereof, and a display device. The display panel includes a first display region and a second display region. The display panel further includes a base substrate, a driving circuit layer, a light emitting functional film layer and a conductive layer, which are located in the first display region and the second display region. The driving circuit layer is disposed on the base substrate; the light emitting functional film layer is disposed on the driving circuit layer; and the conductive layer is disposed on the light emitting functional film layer. A thickness of a portion of the conductive layer located in the first display region is less than a thickness of a portion of the conductive layer located in the second display region.

Abstract: An electroluminescent display substrate and a display device are provided. The electroluminescent display substrate includes: a base substrate; a display light-emitting element arranged on the base substrate; an encapsulation structure arranged on the base substrate and covering the display light-emitting element; a light-shielding structure arranged on a side of the encapsulation structure away from the base substrate; and an opening at least passing through the encapsulation structure. The light-shielding structure includes a first light-shielding portion and a second light-shielding portion that extend continuously.

Abstract: A method includes: providing a first gate electrode over the substrate; forming a first pair of spacers on two sides of the first gate electrode; removing the first gate electrode to form a first trench between the first pair of spacers; depositing a dielectric layer in the first trench; depositing a first layer over the dielectric layer; removing the first layer from the first trench; and depositing a work function layer over the dielectric layer in the first trench.

Abstract: An integrated circuit (IC) device is disclosed which includes at least a first hybrid bond interface layer disposed between adjacent wafers of a wafer stack. Routing within the hybrid bond interface layer allows test pads exposed on a top wafer of the wafer stack to electrically couple test keys within the wafer stack. By utilizing the routing within the hybrid bond interface layer to index electrical connections between adjacent wafers, IC dies stacked on the wafers may be fabricated with less mask sets as compared to conventional designs.

Abstract: Embodiments include a wafer-on-wafer bonding where each wafer includes a seal ring structure around die areas defined in the wafer. Embodiments provide a further seal ring spanning the interface between the wafers. Embodiments may extend the existing seal rings of the wafers, provide an extended seal ring structure separate from the existing seal rings of the wafers, or combinations thereof.

Abstract: The embodiments of the present application provide a display substrate and method for preparation thereof, and a display device. The display substrate includes a base, a piezoelectric layer arranged on the base, and a thin-film transistor arranged on the piezoelectric layer, said piezoelectric layer being configured to convert heat generated by the thin-film transistor into sound waves.

Abstract: A method of forming a perovskite thin film and a light-emitting device including a layer manufactured by the method.

Abstract: Partial self-aligned contact structures are provided. In one aspect, a method of forming a semiconductor device includes: patterning fins in a substrate; forming a gate(s) over the fins, separated from source/drains by first spacers, wherein a lower portion of the gate(s) includes a workfunction-setting metal, and an upper portion of the gate(s) includes a core metal between a metal liner; recessing the metal liner to form divots in the upper portion of the gate(s) in between the first spacers and the core metal; forming second spacers in the divots such that the first spacers and the second spacers surround the core metal in the upper portion of the gate(s); forming lower source/drain contacts in between the first spacers over the source/drains; recessing the lower source/drain contacts to form gaps over the lower source/drain contacts; and forming source/drain caps in the gaps. A semiconductor device is also provided.

Abstract: Disclosed embodiments herein relate to an integrated circuit including power switches with active regions connected to form a contiguous region. In one aspect, the integrated circuit includes a first layer including a first metal rail extending in a first direction. In one aspect, the integrated circuit includes a second layer above the first layer along a second direction perpendicular to the first direction. The second layer may include active regions for power switches. In one aspect, the active regions of the power switches are connected to form a contiguous region extending in the first direction. The first metal rail may be electrically coupled to the active regions through via contacts. In one aspect, the integrated circuit includes a third layer above the second layer along the second direction. The third layer may include a second metal rail electrically coupled to some of the power switches through additional via contacts.

Abstract: An array of poly lines on an active device area of an integrated chip is extended to form a dummy device structure on an adjacent isolation region. The resulting dummy device structure is an array of poly lines having the same line width, line spacing, and pitch as the array of poly lines on the active device area. The poly lines of the dummy device structure are on grid with the poly lines on the active device area. Because the dummy device structure is formed of poly lines that are on grid with the poly lines on the active device area, the dummy device structure may be much closer to the active device area than would otherwise be possible. The resulting proximity of the dummy device structure to the active device area improves anti-dishing performance and reduces empty space on the integrated chip.

Abstract: Provided are a fluorinated compound for patterning a metal or an electrode (cathode), an organic electronic element using the same, and an electronic device thereof, wherein a fine pattern of the electrode is formed by using the fluorinated compound as a material for patterning a metal or an electrode (cathode), without using a shadow mask, and it is possible to more easily apply UDC since it is easy to manufacture a transparent display having high light transmittance.