Abstract: Provided are a display substrate and a preparation method thereof, and a display apparatus. The display substrate includes a silicon-based substrate and an array structure layer arranged on the silicon-based substrate; a driving transistor and a first power line being arranged in the silicon-based substrate in the display area, a light emitting element being disposed on the array structure layer in the display area, a first electrode of the driving transistor being connected with the first power line, and a second electrode of the driving transistor being connected with an anode of the light emitting element; a power supply electrode and a second power line being arranged in the silicon-based substrate in the peripheral area, the power supply electrode being connected with the second power line.

Abstract: A display device with high display quality is provided. The display device includes a first lower electrode, a first EL layer over the first lower electrode, a second lower electrode, a second EL layer over the second lower electrode, an upper electrode over the first EL layer and the second EL layer, a first region not provided with the first lower electrode below the first EL layer, and a second region not provided with the second lower electrode below the second EL layer. In the first region, the upper electrode is positioned not to be in contact with the first lower electrode. In the second region, the upper electrode is positioned not to be in contact with the second lower electrode.

Abstract: The present invention relates to heteroleptic complexes comprising a phenylimidazole or phenyltriazole unit bonded via a carbene bond to a central metal atom, and phenylimidazole ligands attached via a nitrogen-metal bond to the central atom, to OLEDs which comprise such heteroleptic complexes, to light-emitting layers comprising at least one such heteroleptic complex, to a device selected from the group consisting of illuminating elements, stationary visual display units and mobile visual display units comprising such an OLED, to the use of such a heteroleptic complex in OLEDs, for example as emitter, matrix material, charge transport material and/or charge blocker.

Abstract: An electroluminescent device and a display device including the electroluminescent device. The electroluminescent device includes a first electrode and a second electrode each having a surface opposite the other; a light emitting layer disposed between the first electrode and the second electrode, the light emitting layer including quantum dots; and an electron transport layer disposed between the light emitting layer and the second electrode, the electron transport layer including inorganic material nanoparticles including an anion dopant including P, N, C, Cl, F, Br, S, or a combination thereof.

Abstract: Provided are electronic devices and methods of manufacturing the same. An electronic device may include a substrate, a gate electrode on the substrate, a ferroelectric layer between the substrate and the gate electrode, and a carbon layer between the substrate and the ferroelectric layer. The carbon layer may have an sp2 bonding structure.

Abstract: An organic light emitting device including a first electrode, a second electrode provided opposite to the first electrode, and an organic material layer provided between the first electrode and the second electrode, wherein the organic material layer includes a hole transfer layer and an electron blocking layer, and the hole transfer layer and the electron blocking layer include a compound of Chemical Formula 1, the materials of the hole transfer layer and the electron blocking layer are different from each other, and one or more layers that are not the hole transfer layer and the electron blocking layer of the organic material layer include a compound of Chemical Formula 2.

Abstract: The present disclosure provides a novel polymer compound prepared by curing a compound represented by the following Chemical Formula 1 and a compound represented by the following Chemical Formula 4, and an organic light emitting device comprising the same: with each variable being defined therein.

Abstract: An organic light emitting display device may include a filling part filling a space between a second substrate and an organic light emitting diode, and a dam structure disposed in a non-display area and surrounding the filling part. At least one of the dam structure and the filling part includes a getter. The getter of the present disclosure is composed of magnesium oxide particles whose surfaces are modified into a first surface modification part made of an amino silane-based compound and a second surface modification part bound to the first surface modification part and made of a compound containing an acrylate group and a methacrylate group. Accordingly, it is possible to provide an organic light emitting display device that has high transparency and of which optical properties and durability are improved by minimizing permeation of water and oxygen.

Abstract: A thin film transistor and manufacturing method thereof, an electronic device are provided, which includes: a gate electrode, a gate insulation layer, an active layer, a first electrode and a second electrode are on a base substrate, the active layer made of a one-dimensional semiconductor nano material includes a first electrode region, a second electrode region, a first channel region, a second channel region; the first electrode region and the second electrode region are in contact with the first electrode and the second electrode respectively, the first channel region is directly connected with the first channel region and the second channel region respectively, the second channel region is a first doped region and between the first electrode region and the second electrode region; an energy level of the second channel region is different from that of the first channel region corresponding to the energy level of the second channel region.

Abstract: An organic light emitting diode includes a first electrode, a hole transport region disposed on the first electrode, an emission layer disposed on the hole transport region, an electron transport region disposed on the emission layer, and a second electrode disposed on the electron transport region. The hole transport region includes a first hole transport layer which is directly disposed on the lower portion of the emission layer and has a first refractive index, and a second hole transport layer which is disposed on the lower portion of the first hole transport layer and has a second refractive index, thereby exhibiting an improved luminous efficiency characteristic.

Abstract: Embodiments related to emissive display device structures having an emissive display element and a metamaterial lens having a plurality of nanoparticles over an emissive surface of the emissive display element to control the angular distribution of light emitted from the emissive display element, displays having such controlled emissive display device structures, systems incorporating such controlled emissive display device structures, and methods for fabricating them are discussed.

Abstract: A carbon nanotube field effect transistor (CNFET), that has a channel formed of carbon nanotubes (CNTs), includes a layered deposit of a nonstoichiometric doping oxide (NDO), such as HfOX, where the concentration of the NDO varies through the thickness of the layer(s). An n-type metal-oxide semiconductor (NMOS) CNFET made in this manner can achieve similar ON-current, OFF-current, and/or threshold voltage magnitudes to a corresponding p-type metal-oxide semiconductor (PMOS) CNFET. Such an NMOS and PMOS can be used to achieve a symmetric complementary metal-oxide semiconductor (CMOS) CNFET design.

Abstract: Various configurations and arrangements for touchscreens are disclosed to accommodate for one or more optical discontinuities that can be present within these touchscreens. When the one or more optical discontinuities are present, these configurations and arrangements of the touchscreens present a single layer of transparent conductive material that can be difficult to perceive by a human eye when viewing the touchscreens. Additionally, various edge correction techniques are disclosed to adjust mutual capacitances along a perimeter of the touchscreens. These edge correction techniques adjust mutual capacitances such that the values of the mutual capacitances are substantially uniform throughout.

Abstract: An electroluminescent element according to an aspect of the disclosure includes: a pair of a cathode electrode and an anode electrode; a light-emitting layer provided between the cathode electrode and the anode electrode; an electron transport layer provided between the cathode electrode and the light-emitting layer; and a hole transport layer provided between the anode electrode and the light-emitting layer. The light-emitting layer includes ZnSe-based quantum dots including ZnSe and one of the electron transport layer and the hole transport layer is composed of ZnO particles having an average particle size of 3 nm or greater and 30 nm or less.

Abstract: A display device comprising: a substrate having a first surface and a second surface opposite to the first surface; a plurality of pixels arrayed in a display region of the substrate; an inorganic light-emitting element provided to each of the pixels on the first surface of the substrate; cathode wiring provided in a peripheral region between the display region and an end of the substrate on the first surface of the substrate and electrically coupled to the inorganic light-emitting element; and a heat radiator provided on the second surface of the substrate, wherein the substrate has a through hole that connects the first surface with the second surface in the peripheral region of the substrate and overlaps the cathode wiring in planar view viewed from a direction perpendicular to the first surface of the substrate.

Abstract: According to one embodiment of the present disclosure, there is provided a substrate processing system for processing a plurality of substrates including: a processor configured to perform a process on the substrate; a transport device configured to repeatedly transport the plurality of substrates with respect to the processor; and a controller configured to control the process of the substrate in the processor, wherein the controller is configured to: execute the process based on a process recipe, which is a control program for executing the process; and set an offset time, which is a function corresponding to a number of the substrates processed by the processor or a function corresponding to a parameter equivalent to the number of the processed substrates, with respect to a step time for a step of the process recipe.

Abstract: The embodiments of the present disclosure provide a semiconductor base plate and a test method thereof. When a first test line and a second test line in the semiconductor base plate are tested, a resistivity of the first test line can be tested by directly loading voltages to a first test pad and a second test pad after a first conductive layer is formed and before a first insulating layer is formed. After a second conductive layer is formed, a resistivity of the second test line is tested by loading voltages to a third test pad and a fourth test pad.

Abstract: The present application provides a method for manufacturing a semiconductor package with air gaps for reducing capacitive coupling between conductive features. The method comprises: providing a first substrate with an integrated circuit; forming a first stack of insulating layers with first protruding portions on the integrated circuit; removing a topmost insulating layer in the first stack of insulating layers; forming through holes in the first stack to form a first semiconductor structure; providing a second substrate with an integrated circuit; forming a second stack of insulating layers with second protruding portions on the integrated circuit; forming a recess portion in the first stack to form a second semiconductor structure; and bonding the first semiconductor structure with the second semiconductor structure, with an air gap formed from the recess portion.

Abstract: A photoelectric converter includes a first electrode containing a transparent conductive material, a second electrode, and a multilayer body that is positioned between the first electrode and the second electrode, and that has a photoelectric conversion function. The multilayer body includes a first layer and a second layer positioned between the first layer and the second electrode. The first layer absorbs light in a first wavelength band of 360 nm or longer and transmits light in a second wavelength band, the second wavelength band including wavelengths longer than wavelengths included in the first wavelength band. The second layer absorbs the light in the second wavelength band. The multilayer body substantially does not have sensitivity for photoelectric conversion in the first wavelength band and has sensitivity for photoelectric conversion in the second wavelength band.

Abstract: The present application belongs to the field of organic materials, and relates to an organic compound, and an electronic element and an electronic device using same. The organic compound has a structure as represented by Formula I, and the organic compound can significantly improve the performance of an organic electroluminescent device when applied to the device.