Abstract: Device for the permanent nutrition of pot plants and containing a granulated slow-release fertilizer comprising at least one fertilizing element selected from nitrogen, phosphorus and potassium, consisting of a flat support, on the upper surface of which adhere the granules, and a water-permeable sheet covering the flat support so as to enclose the granules.

Abstract: This method involves the deposition of free metal atoms (4) from the apex (5) of a pointed tip (1) supported at a distance of 10 to 20 nm from a substrate (2). The atoms (4) are being field-desorbed under the influence of a strong electric field existing between the tip (1) and the substrate (2). With the tip (1) being moved across the substrate (2), a narrow trace (6) of metal atoms will be deposited on the substrate.

Abstract: A composition of matter including an aqueous solution of hydrofluoric acid or ammonium fluoride and a dye that fluoresces when illuminated by ultra-violet light. Spilled corrosive fluoride solutions are thereby rendered easily detectable by subjecting the surface onto which the solution was spilled to ultra-violet radiation.

Abstract: A method of treating a polymer film to alter its physical properties, comprising exposing the film to an ionized plasma in a vacuum environment with the ionizing gas producing one of surface etching, polymer cross-linking and coating of the film.

Abstract: In the case of forming a single-layered or multilayered compound semiconductor film such as a GaAs thin film for a semiconductor laser, an EL light-emission element and the like in a molecular beam epitaxis method, a vacuum deposition method or a sputtering method, the method of the invention is to prevent the compounds from deteriorating and decomposing by making activated hydrogen coexist therein.

Abstract: Solar-controlled glazing having a transmission of between 5 and 40% in the visible spectrum range and having heat-reflection properties is produced by applying an oxide layer having an optical thickness of between 20 and 280 nm directly to a transparent substrate by cathodic evaporation in an oxygen-containing atmosphere to form a first layer. A chromium nitride layer having a geometric thickness of between 10 and 40 nm is then applied in an atmosphere consisting of inert gas and nitrogen to provide a second layer. An optical third dielectric layer may be applied to the second layer. The oxide layer is selected from oxides of tin, titanium and aluminium.

Abstract: In a phosphate fluorescent substance including orthophosphate as a parent material and manganese as a main activator, said phosphate fluorescent substance has at least one of the following features (I) and (II): (I) The maximum intensity point in the glow curve is within the range of 200.degree.-400.degree. C. and (II) Ia/Ib is within the range of 0.6-3.0.

Abstract: A light-reflective, flowable and curable composition is described which comprises a resin containing light-reflective solid particles in an amount and of average particle size sufficient to provide the desired light reflectance/transmittance characteristics to the cured composition. Preferably, the composition is self-leveling, and the solid particles may be particles of magnesium oxide, barium sulfate, aluminum oxide or mixtures thereof. The compositions of the invention are useful as reflective coatings in various applications such as for radiation detector devices including scintillator crystals.

Abstract: A loose-fitting garment for individuals wearing an ostomy appliance with an encircling band which contacts the body above the stoma. The downwardly extending fabric which covers the torso has a large vertical opening therein and a pocket on the exterior covering a portion of the opening. The appliance fitted to the stoma extends through the opening and rests in the pocket. A cover flap is provided to shield the appliance from view.

Abstract: An apparatus and method for reshaping an optical surface by the controlled deposition of material thereon. A deposition source is disposed adjacent the optical surface to be reshaped and moved relative to the surface under control of a computer depositing material onto the surface for reforming it into a predetermined shape.

Abstract: A reactively sputtered photoconductive amorphous silicon film having a controlled monohydride and polyhydride bond density is produced by applying a DC voltage bias to the film's substrate during deposition.

Abstract: The subject invention is a method of sputtering a material on a substrate in which the substrate is first locally heated so that the mobility on the surface of the substrate is increased to a value E.sub.s. A material is then sputtered on the substrate with a sputtering energy E.sub.k whereby the sum of E.sub.k and E.sub.s is greater than the activation energy required for a chemical reaction to occur between the sputtered surface of the substrate and the sputtered material. In the preferred embodiment, the substrate is silicon and the material to be sputtered is a refractory metal such as titanium.

Abstract: Automatic loading mechanism for automatically transferring semiconductor wafers from storage cassettes onto disk shaped electrodes carried on a hexagonal electrode structure within a plasma reaction chamber. The system includes a reactor chamber, a transport mechanism for transporting semiconductor wafers from storage cassettes and to storage cassettes and a loading mechanism for transferring semiconductor wafers from said transport mechanism onto the electrode structure within the reactor chamber and for transferring processed wafers from said reactor chamber back to said transport means for transport to an output cassette.

Abstract: Light-collecting system, characterized in that it contains a coumarin derivative of the formula ##STR1## in which T designates O or NR.sub.4, wherein R.sub.4 represents hydrogen, optionally substituted alkyl or optionally substituted aryl;R.sub.1 designates a carbocyclic or heterocyclic, oxygen-free 5-membered or 6-membered ring which is linked via a C atom or a 5-membered or 6-membered heterocyclic ring which is linked via an N atom and which rotates unsymmetrically about an axis passing through the coumarin-N-heterocyclic ring linkage, it being possible for the 5-membered or 6-membered rings mentioned to carry non-ionic substituents and for an optionally substituted benzene ring or an optionally substituted naphthalene ring to be fused onto them;R.sub.2 designates hydrogen, alkyl, cycloalkyl, aralkyl or aryl, it being possible for the hydrocarbon radicals mentioned to be substituted, and R.sub.3 designates hydrogen, alkyl, cycloalkyl, aralkyl, aryl or a --OR.sub.5, --SO.sub.2 R.sub.5, --SO.sub.2 NHR.sub.

Abstract: The sputtering on polyacetal article is improved by coating the article, before the sputtering step, with a primer solution of a chlorinated polyolefin in a chlorine-containing solvent in respect to adhesion between the article and the sputtering layer.

Abstract: A sputter coating machine includes a rectilinearly translatable load-lock door closing off one end of an evacuable chamber. Wafers to be coated are loaded and unloaded by an elevator blade onto a chuck carried from the inside surface of the door. A clamping ring clamps the wafer to the chuck and advances the wafer through the open throat of a gate-valve portion of the chamber into position opposite a magnetron sputter gun carried from a second door closing off the other end of the chamber. The second door is movable away from the chamber on guide rails and pivotable about an axis for ease of maintenance.

Abstract: A sputter coating machine (11) includes a rectilinearly translatable load-lock door (16) closing off one end of a vacuumable chamber (12). Wafers (21) to be coated are loaded and unloaded by an elevated blade (24) onto a chuck (57) carried from the inside surface of the door (16). A clamping ring (85) clamps the wafer (21) to the chuck (57) and advances the wafer (21) to the open throat of a gate-valve portion (15) of the chamber (12) into position opposite a magnetron-sputter gun (105) carried from a second door end of the chamber (12). The second door (13) is moveable away from the chamber (12) on guide rails (141) and pivotable about an axis (138) for ease of maintenance.

Abstract: A method of sputtering a platinum exhaust gas electrode onto a vitrified zirconia thimble for an electrochemical-type exhaust gas oxygen sensor. Porous high surface area films are consistently deposited at high rates. A DC magnetron cathode assembly having a magnetic field strength of at least 500 gauss across its target face is used at a sputtering power of about 4-9 kilowatts. A thimble-target spacing of less than about 3.0 cm, a pressure less than about 10 millitorr, a sputtering atmosphere consisting essentially of more than about 50 percent nitrogen and/or oxygen, an electrically isolated deposition surface, and an electrically floating reference electrode precoated on the zirconia thimble surface are used.

Abstract: The invention relates to piezoelectric or pyroelectric polymer materials. It provides a process for manufacturing these materials comprising pressing polymer pellets while heating, dipping the obtained sheets in water, stretching the sheets, electrically polarizing the sheets by applying between the two faces of the sheets an electric orientation field, irradiating the sheets to obtain crosslinking and reheating the sheets.

Abstract: There is disclosed a dry process etching or deposition chamber which allows an improvement in process speed and control of directionality over prior art dry process chambers. The etching or deposition chamber is provided with a hollow cathode electrode comprising two parallel electrode surfaces which are maintained at substantially the same electrical potential while a radio frequency potential is applied between the hollow cathode electrode and an anode electrode which is also located within the chamber. During the etching or deposition process, a partial vacuum is maintained in the dry process chamber and a gas is introduced into the chamber to provide a source of halogen ions and carbon or silicon ions under radio frequency excitation these ions forming a chemically reactive plasma. Products of the etching or deposition process can be pumped out of the chamber during the processing step if greater performance is required.