Abstract: Acoustic resonator devices and methods are disclosed. An acoustic resonator device includes a substrate having a surface and a single-crystal piezoelectric plate having front and back surfaces. An aluminum oxide etch-stop layer is sandwiched between the surface of the substrate and the back surface of the piezoelectric plate, a portion of the piezoelectric plate and the etch-stop layer forming a diaphragm spanning a cavity in the substrate. An interdigital transducer (IDT) is formed on the front surface of the single-crystal piezoelectric plate with interleaved fingers of the IDT disposed on the diaphragm. The aluminum oxide etch-stop layer is impervious to an etch process used to form the cavity.
Abstract: A filter includes a first resonant circuit having one or more first resonant frequencies, a second resonant circuit having one or more second resonant frequencies different from the first resonant frequency, and a switch connected to the first resonant circuit and the second resonant circuit. The switch switches between a first state in which a radio-frequency signal of the first resonant frequency flows from an IN terminal to an OUT terminal via the first resonant circuit and a radio-frequency signal of the second resonant frequency flows from the IN terminal to ground via the second resonant circuit and a second state in which a radio-frequency signal of the first resonant frequency flows from the IN terminal to ground via the first resonant circuit and a radio-frequency signal of the second resonant frequency flows from the IN terminal to the OUT terminal via the second resonant circuit.
Abstract: A surface acoustic wave filter includes a longitudinally coupled filter connected between an input terminal and an output terminal on a main surface of a piezoelectric substrate and that includes longitudinally coupled resonators and a parallel arm resonator connected between a node between the input terminal and the longitudinally coupled filter and ground. A line connecting IDT electrodes at an input side of a portion of the longitudinally coupled resonators to the ground and a line connecting the parallel arm resonator to the ground are independently provided and are connected to the same ground terminal.
Abstract: An elastic wave device includes an impedance matching element, a switch that switches a connection state between a first switch terminal connected to the impedance matching element and second switch terminals, multiplexers connected to the second switch terminals, a substrate, and at least one inductor on the substrate and has an inductance smaller than an inductance of the impedance matching element. At least one of the second switch terminals and at least one of the multiplexers are connected with the first inductor interposed therebetween.
Abstract: An elliptical-shaped resonator device. The device includes a bottom metal plate, a piezoelectric layer overlying the bottom metal plate, and a top metal plate overlying the piezoelectric layer. The top metal plate, the piezoelectric layer, and the bottom metal plate are characterized by an elliptical shape having a horizontal diameter (dx) and a vertical diameter (dy), which can be represented as ellipse ratio R=dx/dy. Using the elliptical structure, the resulting bulk acoustic wave resonator (BAWR) can exhibit equivalent or improved insertion loss, higher coupling coefficient, and higher quality factor compared to conventional polygon-shaped resonators.
August 3, 2018
Date of Patent:
December 1, 2020
Dae Ho Kim, Pinal Patel, Rohan W. Houlden, James Blanton Shealy, Jeffrey B. Shealy
Abstract: A high-frequency module includes a module substrate including an internal wiring pattern, and a SAW filter including a piezoelectric substrate, an electrode pattern on the piezoelectric substrate, a support surrounding the electrode pattern, and a cover on the support covering the electrode pattern to define a hollow space together with the support and the piezoelectric substrate. The module substrate, the cover, and the piezoelectric substrate are disposed in this order in a perpendicular or substantially perpendicular direction with respect to the module substrate, and a shield electrode is provided on a surface of the cover that faces the module substrate or on a surface of the cover that faces the piezoelectric substrate.
Abstract: A band elimination filter includes a plurality of parallel resonators, each including a piezoelectric substrate and an IDT electrode on a surface of the piezoelectric substrate. The IDT electrode includes a pair of comb-shaped electrodes opposing each other, and the IDT electrode includes electrode fingers, a pitch of the electrode fingers being different between an end portion of the IDT electrode in a propagation direction of an elastic wave and a central portion of the IDT electrode different from the end portion.
Abstract: Surface acoustic wave (SAW) resonator, SAW filters, and methods of fabricating SAW filters. A first plurality of parallel conductors extending from a first bus bar are formed on a surface of a 128-degree Y-cut lithium niobate substrate. A second plurality of parallel conductors extending from a second bus bar are formed on the surface of the substrate, the second plurality of parallel conductors interleaved with the first plurality of parallel conductors. An SiO2 layer overlays the first and second pluralities of parallel conductors. The first and second pluralities of parallel conductors are substantially copper and have a thickness DCU defined by 0.12P?DCU?0.24P, where P is a center-to-center spacing of adjacent parallel conductors. The SiO2 layer has a thickness DOX defined by 3.1DCU?DOX?4.5DCU.
August 23, 2018
Date of Patent:
November 17, 2020
Sean McHugh, Patrick Turner, Ventsislav Yantchev, Filip Iliev
Abstract: An elastic wave device includes a piezoelectric substrate made of lithium niobate, an interdigital transducer electrode on the piezoelectric substrate, and a silicon oxide layer that covers the interdigital transducer electrode. The interdigital transducer electrode includes an AlCu layer and a metal layer disposed closer to the piezoelectric substrate than the AlCu layer, the metal layer having a higher density than the silicon oxide layer. The AlCu layer has a Cu concentration of about 13% or more by weight.
Abstract: Temperature compensation of an acoustic stack is disclosed. A first temperature compensation layer is disposed between a first surface of a substrate and a second surface of a piezoelectric layer; and a second temperature compensation layer is disposed over the plurality of electrodes. A temperature coefficient of frequency (TCF) of the acoustic stack is approximately zero (0.0) over a frequency range of Band 13.
September 29, 2017
Date of Patent:
October 20, 2020
Avago Technologies International Sales Pte. Limited
Abstract: A filter includes a series-arm resonator located on a path that connects an input/output terminal (11m) with an input/output terminal (11n), and a first parallel-arm resonant circuit connected between a node, which is located on the path, and ground. The first parallel-arm resonant circuit includes a parallel-arm resonator, and a pair of a capacitor and a switch connected in parallel with each other and in series with the parallel-arm resonator between the parallel-arm resonator and ground. An interconnect line (a1) is connected to the input/output terminal (11m), and an interconnect line (a2) is connected to the input/output terminal. The parallel-arm resonator and the switch are connected by an interconnect line (a3). The interconnect line (a3) has a characteristic impedance lower than a characteristic impedance of the interconnect line (a1) or a characteristic impedance of the interconnect line (a2).
Abstract: An acoustic resonator includes a first electrode disposed over a substrate; a piezoelectric layer disposed over the first electrode; a second electrode disposed over the piezoelectric layer; and a ring disposed in either the first electrode, or in the second electrode. The ring defines at least a portion of a perimeter along an active region of the acoustic resonator.
March 13, 2018
Date of Patent:
July 28, 2020
AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE. LIMITED
Abstract: A bulk acoustic wave (BAW) resonator has a bottom electrode, a top electrode over the bottom electrode, and a multilayer piezoelectric structure between the bottom electrode and the top electrode. The multilayer piezoelectric structure has a first piezoelectric layer having a first electromechanical coupling coefficient and a second piezoelectric layer having a second electromechanical coupling coefficient that is different than the first electromechanical coupling coefficient.
Abstract: A filter device includes a first filter chip including a first signal terminal and a second filter chip including a second signal terminal that are mounted above a package substrate including a substrate main body. First and second signal electrode pads are provided on a first main surface of the package substrate and are respectively joined to the first and second signal terminals. First and second outer terminals are provided on a second main surface of the substrate main body. The first and second signal electrode pads and the first and second outer terminals are connected to each other with first and second wirings, respectively. The second outer terminal is located at the first signal electrode pad side and the first outer terminal is located at the second signal electrode pad side when seen from above.
Abstract: A variable filter (10) includes a parallel arm resonance circuit and a serial arm resonance circuit, the parallel arm resonance circuit includes a parallel arm resonator (p1) having an IDT electrode (121) and a frequency variable circuit (11) connected to the parallel arm resonator (p1), the frequency variable circuit (11) includes a capacitance element (C1) and a switch (SW), the variable filter (10) further includes a capacitance element (C2) connected between a serial arm and ground, the IDT electrode (121), an IDT wiring connected to the IDT electrode (121), and a capacitance wiring connected to the capacitance element (C1) are formed on the same substrate, a wiring (141 or 144) of the capacitance wirings and a wiring (143) of the IDT wirings intersect with each other, and the capacitance element (C2) is configured of the capacitance wiring and the IDT wiring in the intersection region.
Abstract: A filter circuit includes: a first element that is a first capacitor or a first inductor connected in series between input and output terminals; a second element that is connected in parallel to the first element between the input and output terminals, is a second inductor when the first element is the first capacitor, and is a second capacitor when the first element is the first inductor; a third element that is connected in parallel to the first element and in series with the second element between the input and output terminals, is a third inductor when the first element is the first capacitor, and is a third capacitor when the first element is the first inductor; and an acoustic wave resonator having a first end coupled to a first node between the second element and the third element and a second end coupled to a ground terminal.
Abstract: A piezoelectric thin film resonator includes: a substrate; a lower electrode located on the substrate; a piezoelectric film that has a step on an upper surface thereof and is located on the lower electrode, a film thickness of the piezoelectric film inside the step being greater than a film thickness of the piezoelectric film outside the step; an upper electrode located on the piezoelectric film so that a resonance region is formed, the lower electrode and the upper electrode facing each other across the piezoelectric film in the resonance region, the resonance region including the step in plan view; and an insertion film located in the piezoelectric film, between the piezoelectric film and the lower electrode, or between the piezoelectric film and the upper electrode in at least a part of an outer peripheral region within the resonance region, and not located in a central region of the resonance region.
Abstract: A ladder-type filter includes: a first piezoelectric thin film resonator including a first lower electrode, a first piezoelectric film, a first upper electrode, and an insertion film inserted between the first lower and upper electrodes, the insertion film being located in an outer peripheral region of a first resonance region; a second piezoelectric thin film resonator including a second lower electrode, a second piezoelectric film, and a second upper electrode, the second piezoelectric thin film resonator having no insertion film between the second lower and upper electrodes in a second resonance region; a series resonator, at least one of the series resonator being a first resonator that is one of the first and second piezoelectric thin film resonators, and a parallel resonator, at least one of the parallel resonator being a second resonator that is another of the first and second piezoelectric thin film resonators.
Abstract: An electronic component includes: a first substrate; a second substrate that includes a functional element formed on a lower surface of the second substrate, the second substrate being mounted on the first substrate so that the functional element faces an upper surface of the first substrate across an air gap; and an insulating film that is located on the upper surface of the first substrate, overlaps with at least a part of the functional element in plan view, faces the functional element across the air gap, and has a film thickness that is more than half of a distance between a lower surface of the functional element and the upper surface of the first substrate.
Abstract: An elastic wave device includes a lamination layer film including a piezoelectric thin film on a support substrate. The lamination layer film is not partially present in a region located in an outer side portion of a region where IDT electrodes are provided. A first insulation layer extends from at least a portion of a region where the lamination layer film is not present to an upper portion of the piezoelectric thin film. A wiring electrode extends from the upper portion of the piezoelectric thin film to an upper portion of the first insulation layer, and extends onto a section of the first insulation layer in the region.