Abstract: A silicon nitride layer is formed on a substrate by reacting (1) silicon fluoride, (2) nitrogen or nitrogen hydride and (3) nitrogen fluoride by a chemical vapor deposition method using thermal energy and/or optical energy.According to the invention process, fluorine is added to the silicon nitride layer to make Si--F bonds, by which the amount of Si--H bonds can be reduced less than 1/10 as compared with that of silicon nitride made by the conventional reaction between SiH.sub.4 and HN.sub.3. Silicon nitride layer according to the invention will highly enhance the reliability of IC, LSI.

Abstract: An organic metal compound containing elements constituting a magnetic material and an oxygen gas are introduced into plasmas at a low pressure and a thin film of magnetic oxide is prepared on an organic film or aluminum at low temperature.

Abstract: A method of applying a liquid to a moving web while pushing an extrusion application head to the moving web without supporting the moving web on the reverse side thereof. The application is performed while the accumulation of the liquid to be applied to the moving web is maintained by (a) the moving web and (b) an edge of the back blade of the extrusion application head, the edge being defined by the intersection of (1) a first surface of the back blade which faces the front blade and which is nearest the web, and (2) a second surface of the back blade which is more remote from the front blade than the first surface and, wherein the pressure of the liquid of the accumulation located between the web and the outlet portion of the slit of the extrusion application head is set within a range from 0.2 kg/cm.sup.2 gauge to 0.8 kg/cm.sup.2 gauge per 50 cm of width of applied liquid.

Abstract: A method of producing electrically conductive structures on non-conductors, in which the deposition of metallic films on non-conductive substrates is carried out by disintegration of metallo-organic compositions in a glow discharge zone of a plasma reactor.

Abstract: Method and apparatus for the coating of a substrate wherein the following chronologically takes place under vacuum conditions: (i) non-oxidized plating material is deposited on the substrate via ion vapor deposition; and (ii) a coating material is chemically bonded with the non-oxidized plating material. The coating material may comprise a primer, which chemically bonds with the non-oxidized plating material, and a polymer, which impregnates the primer-prepared plating material. Said polymer may also chemically bond with the primer. Alternatively, the coating material may comprise an epoxy which forms an organo-metallic bond with the plating material. In another embodiment of the invention, the coating material may comprise boron trifluoride, which chemically bonds with the non-oxidized plating material, and a polymer, which impregnates the boron trifluoride-prepared plating material.

Abstract: A method for providing a dual layer diffusion mask or encapsulation coating for use with III-V compound semiconductors, the dual layer coating comprising an inner layer of silicon which closely matches the coefficient of thermal expansion of the III-V compound semiconductor and an outer layer of silicon nitride which is relatively impermeable to subsequent metallization and for thereafter applying metallized contacts to the III-V compound semiconductor through selectively etched openings in the diffusion mask or encapsulation coating.

Abstract: Polymer surfaces such as polyethylene or polypropylene films are corona discharge treated in the conventional manner, and then treated with a reducing agent such as aqueous KI to convert the surface functional groups containing oxygen to predominantly hydroxyl groups.

Abstract: Process for producing cubic boron nitride films on a substrate by activated dissociation reduction-reaction. Boric acid in the condensed state is evaporated in a vacuum chamber from a resistance-heated evaporation source and ammonia gas is introduced into the chamber. The vapor of the boric acid and the molecules of the ammonia gas are ionized by a beam of low-energy electrons in the reaction zone between the resistance-heated evaporation source and the substrate. The ammonia gas reacts with the boric acid in a two-step process in which (1) the boric acid is reduced by the atomic hydrogen formed by the dissociation of ammonia, and (2) the resulting boron atoms react with the nitrogen atoms released by the dissociation of ammonia to form boron nitride which deposits as a film onthe substrate. This film has the cubic boron nitride structure and is ready for use without requiring post-deposition heat treatment.

Abstract: For the reactive deposition of tubular bodies of electrically conductive material from a flowing gas phase on a tubular substrate, a glow discharge 11 is produced between an inner electrode 6 and an outer electrode 2, one of which is constructed so as to be tubular and serves as a substrate. It is ensured that the electrodes 2, 6 are not short-circuited by growing conductive surface layers so that the glow discharge 11 extinguishes. Furthermore, the electrically conductive coating on the electrode 6 which does not function as the substrate electrode is interrupted in an insulating manner to locally limit the glow discharge 11. For example, by a gas barrier the deposit of an electrically conducting material on the insulation can be avoided. The glow discharge 11 is reciprocated during the deposition process.

Abstract: A method for manufacturing a magnetic recording medium, comprising evaporating a magnetic metal material from an evaporation source to form a vapor stream of the magnetic metal material, vapor-depositing the magnetic metal material on a tape-shaped substrate moving along a cooling can such that the incident angle (.theta.) of the vapor stream which is incident upon the substrate changes continuously from a high incident angle (.theta.max) to a low incident angle (.theta.min), and at the same time introducing one or more gases selected from the group consisting of a rare gas, CO.sub.2 gas, N.sub.2 gas, and nitrogen oxide gas, or a mixed gas composed of oxygen gas and one or more gases selected from the group consisting of a rare gas, CO.sub.2 gas, N.sub.2 gas and nitrogen oxide gas from a gas inlet part disposed at a position in the vicinity of the substrate and near the vapor stream at a low incident angle (.theta.min) upon the substrate, thereby providing a ferromagnetic metal film on the substrate.

Abstract: A method for preparing ferromagnetic iron oxide particles is described, which comprises depositing a cobalt compound onto a surface of lepidocrostie (.gamma.-FeOOH) particles, and then calcining the particles at 150.degree. to 350.degree. C.

Abstract: Process of forming prepasted wallcovering comprising a porous surface that carries a dry coating of polymer particles that become adhesive when wetted by water is made by applying to the surface a dispersion of the particles in a non-aqueous liquid that is stabilized by a polymeric stabilizer and then evaporating the non-aqueous liquid. A dried residue of the dispersion must not form a coherent film and should have a softening point substantially independent of the softening point of the polymeric stabilizer. The polymeric stabilizer is preferably an oil. The non-aqueous liquid is preferably relatively non-volatile.

Abstract: A method of manufacturing an amorphous-metal-coated structure having a base material and an amorphous metal coating layer which coats the base material includes a step of applying a high energy rate forming treatment to both the base material and an amorphous metal disposed on the surface of the base material in such a manner that the amorphous metal is firmly bonded to the surface of the base material in the form of a coating layer. In the amorphous-metal-coated structure manufactured by this method, the amorphous metal and the metal constituting the base material are forced to protrude into each other at the bonding interface, and thereby the amorphous metal coating layer is firmly bonded to the base material by means of the metallic binding force. The amorphous metal-coated article may be employed as a member for a torque sensor.

Abstract: The invention relates to a method of lubricating warp yarn ends arranged in sheet form (W) on the dry side of the drying process (16) as part of the process of preparing a loom beam (22) on a slasher. The method comprises providing a pair of rotating porous lubricating rods (40, 42) arranged on a frame (44, 46) attached to a frame portion (88) of the slasher. The rotating porous rods are provided in the form of a hollow rod having an after lubricant surface (B), an inner lubricant distribution layer A, and a boundary region (32) in which a flow control membrane (C) is formed. The above described construction provides a highly accurate flow control and metering of the lubricant from the interior of the rod outwardly to the application surface.

Abstract: An ion implantation annealing source for a controlled excess of the most volatile element of a multielement compound semiconductor whereby the source is provided with interstices and contains the most volatile element of the multielement semiconductor; and process of ion implantation employing the annealing source.

Abstract: A process for preparing a magnetic recording medium is described, comprising subjecting a surface of a non-magnetic support having a surface roughness of not less than 0.01 .mu.m to a non-contact surface treatment, providing a layer containing a compound polymerizable by radiation exposure on the surface of the support, exposing said layer to radiation, and then providing a magnetic layer on the radiation-exposed layer.

Abstract: An electrostatic color picture having a single toning shoe for successively and sequentially applying color liquid developers to a color latent image overlay to a sheet disposed against a rotating drum. An electrostatic head scans the sheet in a helical pattern of abutting stripes and forms the latent image on the sheet. A toning shoe assembly follows the head and applies one of the color developers to the sheet. A drain selector foot, pivotable beneath the toning shoe, brings an appropriate developer recycling tube into communication with a drain in the toning shoe assembly for returning used developer to the correct supply tank. After scanning the sheet, the toning shoe is rinsed with a solvent at a cleaning station past the end of the drum. The toning shoe has a plurality of pressure responsive reed valves, each communicating with one of a plurality of channels in the shoe for selecting sequential color developers until the entire image is toned in repeated passes of the single toning shoe.

Abstract: The method of producing transparent and conductive tin oxide, which comprised the steps of(a) providing a phosphorous fluoride or a non-matallic halocarbon where the halogen consists of fluorine;(b) providing an organotin compound; and(c) applying the combination of said fluoride or said halocarbon and said organotin compound to a substrate in an oxidizing atmosphere.

Abstract: A silicon nitride layer is formed on a substrate by reacting (1) a silicon fluoride, (2) nitrogen or nitrogen hydride and (3) a nitrogen fluoride by a plasma chemical vapor deposition (thermal energy and electronic energy are applied) process.According to the invention, fluorine is added in the silicon nitride layer to produce a Si-F coupling and thus it is made possible to reduce a concentration of hydrogen in the silicon nitride film.It is also possible to make a concentration of oxygen in the silicon nitride layer less than 1/10 of that of the conventional silicon nitride.

Abstract: Process for producing a buried insulating layer in a semiconductor substrate by ion implantation.This process consists of producing a mask on the substrate regions where the active zones are located, carrying out oxygen or nitrogen ion implantation in the substrate through the mask for the direct forming in the exposed area, and forming by lateral dispersion and diffusion into the substrate of implanted ions beneath the mask, a continuous oxide or nitride insulating layer which is buried in the substrate and optionally annealing the implanted substrate for reinforcing the continuity of the insulating layer by lateral diffusion of the implanted ions.