Abstract: Methods of wet etching through a silicon substrate using composite etch-stop layers are disclosed. In one embodiment, the composite etch stop comprises a layer of silicon dioxide and a layer of polyimide.

Abstract: A polymeric film has a substrate layer of polyester material and an antistatic layer containing a polyester/polyalkylene oxide copolymer and a salt, the ratio by weight of copolymer/salt being in the range from 0.1 to 100/1. The copolymer is preferably a polyethylene terephthalate/polyethylene oxide block copolymer and the salt is preferably an alkali metal salt. The film exhibits low surface resistivity, even at low relative humidity.

Abstract: An active energy ray-curable resin composition, particularly an active energy ray-curable coating composition, both comprising:(A) a resin having oxetane functional groups and epoxy groups in the molecule, and(B) a photo-induced cationic polymerization initiator.

Abstract: A method for trimming a pole used in a read-write head comprises the step of depositing a metallic layer on a layer of pole material, patterning the metallic layer so that it can serve as a mask, and ion beam etching the pole material with nitrogen ions. Of importance, a thin nitride layer forms on the metallic layer so that the etch rate of the metallic layer during ion beam etching is slowed. Alternatively, in lieu of the metallic layer, a nitride layer can be used.

Abstract: The invention comprises an apparatus for use in making a web of papermaking fibers. The apparatus comprising: a dewatering felt layer having a first web facing felt surface at a first elevation and a second oppositely facing felt surface, and a web patterning layer comprising a photosensitive resin. The patterning layer penetrates the first felt surface, and extends from the first felt surface to form a web contacting top surface at a second elevation different from the first elevation. The invention also comprises a method of forming a web support apparatus having a felt layer and a web patterning layer.

Abstract: The present invention provides a method for dry-etching a solid surface with a gaseous bismuth halide compound, which permits achivement of a simple and perfect dry-process for manufacturing of electoric devices, quantum devices etc., giving a high reproducibility.

Abstract: A pattern forming method comprises subjecting a surface of a semiconductor substrate to a surface treatment for imparting hydrogen atoms, irradiating a desired region of said surface with an energy ray, selectively forming a metal film on a non-irradiated region other than the desired region, and etching said semiconductor substrate using said metal film as a mask.

Abstract: A fine pattern is formed using a resist material including a copolymer of a silicon-containing acrylate and an acrylate which contains a group that is eliminated by an acid, and a photo-acid generator which generates the acid upon irradiation. The polarity of the material changes after elimination of this group and becomes soluble in an aqueous alkali solution.

Abstract: This invention describes a three-step process for etching a layer of silicon nitride over a thin layer of silicon dioxide on a semiconductor substrate for producing silicon nitride pattern with nearly vertical sidewalls, very small critical dimension bias and no trenching in the silicon dioxide, comprising a first step of a highly anisotropic etch process with a high etch rate, achieved by adding CHF.sub.3 to the gaseous mixture of SF.sub.6 and He, carried out at a relatively high power and low pressure, used to etch the bulk of the silicon nitride layer, a second step of lower etch anisotropy and etch rate, achieved by replacing CHF.sub.3 with HBr, carried out at higher pressure and lower power, used to etch out the remainder of the nitride layer with a small over-etch beyond the end point, a third step of high Si.sub.3 N.sub.4 /SiO.sub.2 etch selectivity, achieved by adding an oxidant to the reactive gas mixture, used to remove any remaining silicon nitride residues.

Abstract: There is disclosed a color developing resin composition comprising a base polymer, a dialdehyde represented by the general formula OHC--R.sup.1' --CHO, a diamine represented by the general formula H.sub.2 N--R.sup.2' --NH.sub.2 (at least one of R.sup.1' and R.sup.2' is an aromatic group), a compound which produces an acid by light irradiating and a resin which is crosslinked with the acid.

Abstract: A process for forming a partially polymerized DVS resin comprising heating DVS monomer (1,3-bis(2-bicyclo?4.2.0!octa-1,3,5-trien-3-ylethenyl)-1,1,3,3-tetramethyl disiloxane) in a solvent at a concentration of DVS monomer in the solvent such that:(a) the DVS resin, when applied and polymerized in a thin layer on a solid substrate does not craze; and(b) the DVS resin, is rendered photocurable by the addition of at least one photosensitive agent in an amount sufficient to convert the mixture to an organic-insoluble solid upon exposing the mixture to photon radiation and the film retention upon development with a solvent is at least 50 percent. The DVS resin may be used as an interlayer dielectric to fabricate thin film multichip modules.

Abstract: An electrostatic toner receptor layer comprised of a blend of a terpolymer of methyl methacrylate/ethyl acrylate and N-t-butyl acrylamide, a vinyl resin, a chlorinated rubber or polyurethane dispersion rubber and a plasticizer. The resulting receptor layer provide durability and flexibility when applied to a crack resistance film for subsequent application to soft-sided vehicles.

Abstract: A method of fabricating a specimen for the observation and analysis of defects in a wafer includes the steps of: locating a position of a defect which exists in a patterned layer of a wafer on which a semiconductor device is formed; forming a photoresist layer on an outer side of the patterned layer at the position; drilling the wafer to form a hole from an underlying, outer portion of the wafer to the outer side, i.e., a top portion of the patterned layer where the diameter of the hole formed gradually decreases from the underlying portion to the top portion; and etching the drilled portion to remove the remaining residue.

Abstract: A photovoltaic element has a substrate with a conductive surface, a zinc oxide layer containing fluorine and a non-single-crystal semiconductor layer, where the fluorine content of the zinc oxide layer (i) varies across the thickness of the layer, (ii) is at a minimum at the interface with the substrate and (iii) increases toward the semiconductor layer.

Abstract: The invention relates to the addition of sulfonated zinc, manganese, or aluminum phthalocyanines to inorganic fillers and pigments for enhancing their whiteness, brightness and chromaticity, as well as to the fillers and pigments and mixtures thereof so obtained, and to the use thereof in e.g. paper manufacture.

Abstract: A solvation-based method for charging toner particles in a liquid electrophotographic developer composition is provided. The method makes use of a material containing specific salvation sites which are incorporated into the resinous phase of the toner, and a charge director which is a metal salt, the metal, cationic component of which is effective to form a highly stable, "solvated" charged toner complex. Toner and developer compositions are also provided which make use of the novel solvation-based mode of charge direction.

Abstract: A method for forming a resist pattern by coating a primary photoresist pattern having a small thickness and then coating a secondary photoresist pattern over the primary photoresist pattern. Alternatively, the resist pattern is formed by coating a primary photoresist film, exposing the primary photoresist film to light to define a light-exposed region in the primary photoresist film, coating a secondary photoresist film over the primary photoresist film, exposing the secondary photoresist film to light to define a light-exposed region in the secondary photoresist film, and developing the resulting structure to form primary and secondary resist patterns. The method achieves an improvement in the contrast of light, thereby obtaining a resist pattern having a vertical profile.

Abstract: A composition for forming a metal oxide thin film pattern which is a solution containing one or more hydrolytic metal compounds selected from the group consisting of hydrolytic organometallic compounds (e.g., metal alkoxide) and metal halides, and a water generating agent which frees water under the effect of irradiation with active rays (e.g., o-nitrobenzyl alcohol and 2-nitroethanol) and, as required, an acid generating agent which frees acid under the effect of irradiation with active rays is disclosed. A thin film pattern is formed by coating the composition onto a substrate, irradiating active rays for forming an image on the resultant photosensitive coating film, developing the same with water or an alcoholic solvent to remove the non-exposed portion, and heat-treating the substrate to convert the remaining film into a metal oxide, thereby forming a negative-type metal oxide thin film pattern.

Abstract: An N-aryl-.alpha.-amino acid (I), which is a novel compound, is effective as a photoinitiator. The photoinitiator composition including this photoinitiator is effective for improving photosensitive properties of photosensitive materials containing poly(amic acid) and an addition polymerizable compound used for pattern formation. Further, a photoinitiator composition (A) comprising an N-aryl-.alpha.-amino acid (I) or (I'), a 3-substituted coumarin (II) and/or an azabenzalcyclohexanone (III), or a photoinitiator composition (B) comprising an N-aryl-.alpha.-amino acid (I) or (I'), a 3-substituted coumarin (II) and a titanocene (IV), or a photoinitiator composition (C) comprising a 3-substituted coumarin (II), a titanocene (IV) and an oxime ester (V), is effective for improving photosensitive properties of photosensitive materials containing poly(amic acid) and an addition polymerizable compound used for pattern formation.

Abstract: A method of reproducing multiplex images wherein an electrostatic image is formed on an image retainer by using a common electrostatic image forming device, the electrostatic image formed on the image retainer is developed, the steps of the above are repeated to superpose a plurality of toner images on the image retainer, and the toner images is transferred on a recording paper by one step. The developings other than the first time developing are carried out in such a manner that the surface of a developer layer on a developer feeding carrier does not contact with the surface of the toner image on the image retainer.