Patents Examined by Bernard P. Codd
  • Patent number: 5891354
    Abstract: Methods of wet etching through a silicon substrate using composite etch-stop layers are disclosed. In one embodiment, the composite etch stop comprises a layer of silicon dioxide and a layer of polyimide.
    Type: Grant
    Filed: July 26, 1996
    Date of Patent: April 6, 1999
    Assignee: Fujitsu Limited
    Inventors: Michael G. Lee, Solomon I. Beilin, William T. Chou, Michael G. Peters, Wen-chou Vincent Wang
  • Patent number: 5882800
    Abstract: A polymeric film has a substrate layer of polyester material and an antistatic layer containing a polyester/polyalkylene oxide copolymer and a salt, the ratio by weight of copolymer/salt being in the range from 0.1 to 100/1. The copolymer is preferably a polyethylene terephthalate/polyethylene oxide block copolymer and the salt is preferably an alkali metal salt. The film exhibits low surface resistivity, even at low relative humidity.
    Type: Grant
    Filed: April 20, 1995
    Date of Patent: March 16, 1999
    Assignee: Imperial Chemical Industries PLC
    Inventors: William James Brennan, Noel Stephen Brabbs, Martin Wright
  • Patent number: 5882842
    Abstract: An active energy ray-curable resin composition, particularly an active energy ray-curable coating composition, both comprising:(A) a resin having oxetane functional groups and epoxy groups in the molecule, and(B) a photo-induced cationic polymerization initiator.
    Type: Grant
    Filed: February 12, 1997
    Date of Patent: March 16, 1999
    Assignee: Kansai Paint Co., Ltd.
    Inventors: Yu Akaki, Fumio Yamashita, Yasuo Takaya, Osamu Isozaki
  • Patent number: 5874010
    Abstract: A method for trimming a pole used in a read-write head comprises the step of depositing a metallic layer on a layer of pole material, patterning the metallic layer so that it can serve as a mask, and ion beam etching the pole material with nitrogen ions. Of importance, a thin nitride layer forms on the metallic layer so that the etch rate of the metallic layer during ion beam etching is slowed. Alternatively, in lieu of the metallic layer, a nitride layer can be used.
    Type: Grant
    Filed: July 17, 1996
    Date of Patent: February 23, 1999
    Assignee: Headway Technologies, Inc.
    Inventors: Arthur Hungshin Tao, Yong-Chang Feng, Cheng Tzong Horng, Cherng-Chyi Han
  • Patent number: 5871887
    Abstract: The invention comprises an apparatus for use in making a web of papermaking fibers. The apparatus comprising: a dewatering felt layer having a first web facing felt surface at a first elevation and a second oppositely facing felt surface, and a web patterning layer comprising a photosensitive resin. The patterning layer penetrates the first felt surface, and extends from the first felt surface to form a web contacting top surface at a second elevation different from the first elevation. The invention also comprises a method of forming a web support apparatus having a felt layer and a web patterning layer.
    Type: Grant
    Filed: March 20, 1997
    Date of Patent: February 16, 1999
    Assignee: The Procter & Gamble Company
    Inventors: Paul Dennis Trokhan, Dean Van Phan
  • Patent number: 5869400
    Abstract: The present invention provides a method for dry-etching a solid surface with a gaseous bismuth halide compound, which permits achivement of a simple and perfect dry-process for manufacturing of electoric devices, quantum devices etc., giving a high reproducibility.
    Type: Grant
    Filed: May 30, 1996
    Date of Patent: February 9, 1999
    Assignee: Research Development Corporation of Japan
    Inventors: Tadaaki Kaneko, Takaaki Kawamura
  • Patent number: 5861233
    Abstract: A pattern forming method comprises subjecting a surface of a semiconductor substrate to a surface treatment for imparting hydrogen atoms, irradiating a desired region of said surface with an energy ray, selectively forming a metal film on a non-irradiated region other than the desired region, and etching said semiconductor substrate using said metal film as a mask.
    Type: Grant
    Filed: June 11, 1996
    Date of Patent: January 19, 1999
    Assignee: Canon Kabushiki Kaisha
    Inventors: Yasuhiro Sekine, Genzo Momma, Hiroshi Yuzurihara
  • Patent number: 5856071
    Abstract: A fine pattern is formed using a resist material including a copolymer of a silicon-containing acrylate and an acrylate which contains a group that is eliminated by an acid, and a photo-acid generator which generates the acid upon irradiation. The polarity of the material changes after elimination of this group and becomes soluble in an aqueous alkali solution.
    Type: Grant
    Filed: March 18, 1996
    Date of Patent: January 5, 1999
    Assignee: Fujitsu Limited
    Inventors: Akiko Kotachi, Satoshi Takechi
  • Patent number: 5854302
    Abstract: A process for forming a partially polymerized DVS resin comprising heating DVS monomer (1,3-bis(2-bicyclo?4.2.0!octa-1,3,5-trien-3-ylethenyl)-1,1,3,3-tetramethyl disiloxane) in a solvent at a concentration of DVS monomer in the solvent such that:(a) the DVS resin, when applied and polymerized in a thin layer on a solid substrate does not craze; and(b) the DVS resin, is rendered photocurable by the addition of at least one photosensitive agent in an amount sufficient to convert the mixture to an organic-insoluble solid upon exposing the mixture to photon radiation and the film retention upon development with a solvent is at least 50 percent. The DVS resin may be used as an interlayer dielectric to fabricate thin film multichip modules.
    Type: Grant
    Filed: April 14, 1994
    Date of Patent: December 29, 1998
    Assignee: The Dow Chemical Company
    Inventors: Pamela S. Foster, Ernest L. Ecker, Edward W. Rutter, Jr., Eric S. Moyer
  • Patent number: 5854136
    Abstract: This invention describes a three-step process for etching a layer of silicon nitride over a thin layer of silicon dioxide on a semiconductor substrate for producing silicon nitride pattern with nearly vertical sidewalls, very small critical dimension bias and no trenching in the silicon dioxide, comprising a first step of a highly anisotropic etch process with a high etch rate, achieved by adding CHF.sub.3 to the gaseous mixture of SF.sub.6 and He, carried out at a relatively high power and low pressure, used to etch the bulk of the silicon nitride layer, a second step of lower etch anisotropy and etch rate, achieved by replacing CHF.sub.3 with HBr, carried out at higher pressure and lower power, used to etch out the remainder of the nitride layer with a small over-etch beyond the end point, a third step of high Si.sub.3 N.sub.4 /SiO.sub.2 etch selectivity, achieved by adding an oxidant to the reactive gas mixture, used to remove any remaining silicon nitride residues.
    Type: Grant
    Filed: March 25, 1996
    Date of Patent: December 29, 1998
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shih Chang Huang, Yuh Da Fan, Yung-Jung Chang
  • Patent number: 5853952
    Abstract: There is disclosed a color developing resin composition comprising a base polymer, a dialdehyde represented by the general formula OHC--R.sup.1' --CHO, a diamine represented by the general formula H.sub.2 N--R.sup.2' --NH.sub.2 (at least one of R.sup.1' and R.sup.2' is an aromatic group), a compound which produces an acid by light irradiating and a resin which is crosslinked with the acid.
    Type: Grant
    Filed: August 29, 1996
    Date of Patent: December 29, 1998
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Toru Ushirogouchi, Makoto Nakase, Akira Yoshizumi, Naoko Kihara, Takuya Naito, Naomi Shida, Koji Asakawa
  • Patent number: 5852121
    Abstract: An electrostatic toner receptor layer comprised of a blend of a terpolymer of methyl methacrylate/ethyl acrylate and N-t-butyl acrylamide, a vinyl resin, a chlorinated rubber or polyurethane dispersion rubber and a plasticizer. The resulting receptor layer provide durability and flexibility when applied to a crack resistance film for subsequent application to soft-sided vehicles.
    Type: Grant
    Filed: June 9, 1997
    Date of Patent: December 22, 1998
    Assignee: Minnesota Mining And Manufacturing Company
    Inventors: Ronald S. Steelman, Eric J. Hanson, Jennifer Jeannette
  • Patent number: 5849642
    Abstract: A method of fabricating a specimen for the observation and analysis of defects in a wafer includes the steps of: locating a position of a defect which exists in a patterned layer of a wafer on which a semiconductor device is formed; forming a photoresist layer on an outer side of the patterned layer at the position; drilling the wafer to form a hole from an underlying, outer portion of the wafer to the outer side, i.e., a top portion of the patterned layer where the diameter of the hole formed gradually decreases from the underlying portion to the top portion; and etching the drilled portion to remove the remaining residue.
    Type: Grant
    Filed: July 19, 1996
    Date of Patent: December 15, 1998
    Assignee: Hyundai Electronics Industries Co., Ltd.
    Inventors: Jeong-Hoi Koo, Doo-Jin Park
  • Patent number: 5849108
    Abstract: A photovoltaic element has a substrate with a conductive surface, a zinc oxide layer containing fluorine and a non-single-crystal semiconductor layer, where the fluorine content of the zinc oxide layer (i) varies across the thickness of the layer, (ii) is at a minimum at the interface with the substrate and (iii) increases toward the semiconductor layer.
    Type: Grant
    Filed: April 26, 1996
    Date of Patent: December 15, 1998
    Assignee: Canon Kabushiki Kaisha
    Inventors: Toshimitsu Kariya, Keishi Saito
  • Patent number: 5846382
    Abstract: The invention relates to the addition of sulfonated zinc, manganese, or aluminum phthalocyanines to inorganic fillers and pigments for enhancing their whiteness, brightness and chromaticity, as well as to the fillers and pigments and mixtures thereof so obtained, and to the use thereof in e.g. paper manufacture.
    Type: Grant
    Filed: December 19, 1996
    Date of Patent: December 8, 1998
    Assignee: Jorax GmbH
    Inventor: Axel von Raven
  • Patent number: 5840453
    Abstract: A solvation-based method for charging toner particles in a liquid electrophotographic developer composition is provided. The method makes use of a material containing specific salvation sites which are incorporated into the resinous phase of the toner, and a charge director which is a metal salt, the metal, cationic component of which is effective to form a highly stable, "solvated" charged toner complex. Toner and developer compositions are also provided which make use of the novel solvation-based mode of charge direction.
    Type: Grant
    Filed: December 3, 1993
    Date of Patent: November 24, 1998
    Assignee: Colorep, Inc.
    Inventor: Ronald Swidler
  • Patent number: 5830624
    Abstract: A method for forming a resist pattern by coating a primary photoresist pattern having a small thickness and then coating a secondary photoresist pattern over the primary photoresist pattern. Alternatively, the resist pattern is formed by coating a primary photoresist film, exposing the primary photoresist film to light to define a light-exposed region in the primary photoresist film, coating a secondary photoresist film over the primary photoresist film, exposing the secondary photoresist film to light to define a light-exposed region in the secondary photoresist film, and developing the resulting structure to form primary and secondary resist patterns. The method achieves an improvement in the contrast of light, thereby obtaining a resist pattern having a vertical profile.
    Type: Grant
    Filed: July 13, 1995
    Date of Patent: November 3, 1998
    Assignee: Hyundai Electronics Industries Co., Ltd.
    Inventors: Sang Man Bae, Ki Ho Baik
  • Patent number: 5824456
    Abstract: A composition for forming a metal oxide thin film pattern which is a solution containing one or more hydrolytic metal compounds selected from the group consisting of hydrolytic organometallic compounds (e.g., metal alkoxide) and metal halides, and a water generating agent which frees water under the effect of irradiation with active rays (e.g., o-nitrobenzyl alcohol and 2-nitroethanol) and, as required, an acid generating agent which frees acid under the effect of irradiation with active rays is disclosed. A thin film pattern is formed by coating the composition onto a substrate, irradiating active rays for forming an image on the resultant photosensitive coating film, developing the same with water or an alcoholic solvent to remove the non-exposed portion, and heat-treating the substrate to convert the remaining film into a metal oxide, thereby forming a negative-type metal oxide thin film pattern.
    Type: Grant
    Filed: January 16, 1997
    Date of Patent: October 20, 1998
    Assignee: Mitsubishi Materials Corporation
    Inventors: Katsumi Ogi, Tsutomu Atsuki, Go Sasaki, Tadashi Yonezawa, Nobuyuki Soyama
  • Patent number: 5811218
    Abstract: An N-aryl-.alpha.-amino acid (I), which is a novel compound, is effective as a photoinitiator. The photoinitiator composition including this photoinitiator is effective for improving photosensitive properties of photosensitive materials containing poly(amic acid) and an addition polymerizable compound used for pattern formation. Further, a photoinitiator composition (A) comprising an N-aryl-.alpha.-amino acid (I) or (I'), a 3-substituted coumarin (II) and/or an azabenzalcyclohexanone (III), or a photoinitiator composition (B) comprising an N-aryl-.alpha.-amino acid (I) or (I'), a 3-substituted coumarin (II) and a titanocene (IV), or a photoinitiator composition (C) comprising a 3-substituted coumarin (II), a titanocene (IV) and an oxime ester (V), is effective for improving photosensitive properties of photosensitive materials containing poly(amic acid) and an addition polymerizable compound used for pattern formation.
    Type: Grant
    Filed: July 17, 1995
    Date of Patent: September 22, 1998
    Assignee: Hitachi Chemical Company, Ltd.
    Inventors: Makoto Kaji, Yasunori Kojima, Shigeki Katogi, Masataka Nunomura, Hideo Hagiwara, Dai Kawasaki, Mitsumasa Kojima, Hiroshi Suzuki, Hidetaka Satou
  • Patent number: RE36304
    Abstract: A method of reproducing multiplex images wherein an electrostatic image is formed on an image retainer by using a common electrostatic image forming device, the electrostatic image formed on the image retainer is developed, the steps of the above are repeated to superpose a plurality of toner images on the image retainer, and the toner images is transferred on a recording paper by one step. The developings other than the first time developing are carried out in such a manner that the surface of a developer layer on a developer feeding carrier does not contact with the surface of the toner image on the image retainer.
    Type: Grant
    Filed: September 11, 1995
    Date of Patent: September 14, 1999
    Assignee: Konica Corporation
    Inventors: Satoshi Haneda, Hisashi Shoji, Seiichiro Hiratsuka