Abstract: A composition for forming a conductivity imparting agent comprising:(a) 0.1 to 20 parts by weight of sulfonated polyaniline having a content of a sulfonic acid group of 20 to 80% with respect to an aromatic ring of the sulfonated polyaniline;(b) 100 parts by weight of a solvent;(c) 0.01 to 10 parts by weight of an amine and/or quaternary ammonium salt; and(d) 0.001 to 100 parts by weight of at least one kind of a sulfonic acid group-containing component selected from the following (A) and (B);(A) compounds having a sulfonic acid group; and(B) polymers having a sulfonic acid group.

Abstract: In a stepping accuracy measuring method according to the present invention, LIA measuring marks are successively exposed to shot areas on a wafer as reticle pattern images. In a first measurement, positions of the LIA measuring marks on respective shot areas are detected in a predetermined sequence, thereby monitoring coordinate values of a wafer stage on which the wafer is rested by means of a laser interferometer. Thereafter, in a second measurement, the positions of the LIA measuring marks on the shot areas are detected in a sequence different from the above-mentioned predetermined sequence, for instance, thereby monitoring coordinate values of the wafer stage by means of the laser interferometer. A stepping error is determined on the basis of a difference between the results obtained in the first measurement and the results obtained in the second measurement.

Abstract: Microlithographic methods for the use of improved underlayers for chemically amplified deep UV photoresist compositions and structures produced thereby are disclosed. The compositions comprise, in admixture, a polymeric binder, and an azide which is thermolyzed during microlithographic processing to form an amine. Films formed from the underlayer compositions of the present invention, when applied immediately under and proximate to a chemically amplified photoresist film reduce the resist structure sidewall foot or undercut caused by an adverse contact reaction.

Abstract: A wet-etching method which determines a desired etch-ended point includes the steps of providing an etchant solution in a bath, performing the wet-etch process by dipping a material to be etched in the bath, measuring a weight variation value of the material during the wet etch process, calculating a thickness variation value of the material by using the weight variation value, and stopping the wet-etch process when the thickness variation value reaches a preset value.

Abstract: The present invention relates to a process for generating a resist image on a substrate utilizing a resist composition comprising (a) a radiation-sensitive acid generator, (b) a substituted androstane, and (c) a copolymer acrylate binder. The resist image is made using deep ultraviolet radiation.

Abstract: A sealed self-contained photohardenable imaging assembly comprising:a first transparent polymeric film support;a second polymeric film support which may be opaque or transparent;an imaging layer disposed between said first transparent support and said second support;a subbing layer disposed between said first transparent support and said imaging layer, said subbing including a polymer having chemical moieties which bond to said microcapsules; and an adhesive material disposed between said imaging layer and said second support;said imaging layer comprising a developer material and a plurality of microcapsules, said microcapsules encapsulating a photohardenable composition containing a color precursor, a polyethylenically unsaturated compound, a cyanine dye/borate photoinitiator and a disulfide having the formula: ##STR1## where X is selected from the group consisting of S and O except X is N when the disulfide includes one or more tetrazolyl groups; n represents 0 or 1; A represents the residue of the ring con

Abstract: Microlithographic methods for the use of improved underlayers for chemically amplified deep UV photoresist compositions and structures produced thereby are disclosed. The compositions comprise, in admixture, a polymeric binder, and an azide which is thermolyzed during microlithographic processing to form an amine. Films formed from the underlayer compositions of the present invention, when applied immediately under and proximate to a chemically amplified photoresist film reduce the resist structure sidewall foot or undercut caused by an adverse contact reaction.

Abstract: In photographic processing apparatus, the processing solutions need to be replenished as they are used up. It is known to effect replenishment of chemicals in a paper processor by determining the amount of exposure given to the paper in the printing stage of such apparatus when copying an image on a filmstrip onto photographic paper, and using that information to calculate the amount of replenishment required to compensate exactly for the chemicals used up in processing that print. Described herein is a method of using data relating to the measured optical transmittance of an image on a filmstrip in the printing stage to control replenishment of the processing solutions in the film processing stage of the apparatus and also removal of image-dependent by-products produced in processing that filmstrip.

Abstract: The present invention provides a photosensitive resin composition wherein a sensitiveness of polysilane to photodegradation is improved and a time required for photodegradation is short. The photosensitive resin composition comprises:(a) a polysilane having a structure of the formula: ##STR1## ?wherein R.sub.1, R.sub.2, R.sub.3 and R.sub.4, the same or different, are selected from the group consisting of a substituted or non-substituted aliphatic hydrocarbon group, an alicyclic hydrocarbon group and an aromatic hydrocarbon group, and m and n indicate an integer!,(b) a photoradical generator, and(c) an oxidizing agent. A method for forming a pattern using the photosensitive resin composition is also disclosed.

Abstract: A method for forming a pattern using a multilayer resist including the steps of: coating a first lower resist layer on a substrate having a lower level region and an upper level region; selectively subjecting the upper level region to an over exposure using a mask; subjecting the first lower resist layer to a development process; coating a second lower resist layer on the first lower resist layer and the upper level region; forming an intermediate layer on the second lower resist layer; coating an upper resist layer on the intermediate layer; patterning the upper resist layer to form a predetermined upper resist pattern; transferring the upper resist pattern to the intermediate layer to form an intermediate pattern; and transferring the intermediate pattern to the first and second lower resist layers.

Abstract: A photopolymerizable composition comprising (a) at least one ethylenically unsaturated photopolymerizable compound, and (b) alkoxyphenyl-substituted bisacylphosphine oxides of the formula I ##STR1## in which R.sub.1 and R.sub.2 are identical or different and are a radical of the formula II ##STR2## in which R.sub.4 and R.sub.5 independently of one another are C.sub.1 -C.sub.12 alkyl or C.sub.1 -C.sub.12 alkoxy, andR.sub.6, R.sub.7 and R.sub.8 independently of one another are hydrogen, C.sub.1 -C.sub.12 alkyl, C.sub.1 -C.sub.12 alkoxy or halogen,R.sub.3 is a radical of the formula III ##STR3## in which R.sub.9 is C.sub.1 -C.sub.20 alkyl, C.sub.2 -C.sub.20 alkyl, C.sub.5 -C.sub.6 cycloalkyl, phenyl, naphthyl, phenyl-C.sub.1 -C.sub.5 alkyl, C.sub.2 -C.sub.12 alkenyl, --CF.sub.3 or ##STR4## or R.sub.9 is a radical of the formula IV or V ##STR5## in which X is for example C.sub.1 -C.sub.16 alkylene, C.sub.4 -C.sub.12 alkenylene or is xylylene,R.sub.10 is for example hydrogen, C.sub.1 -C.sub.20 alkyl, C.sub.2 -C.

Abstract: The present invention is directed to an encapsulated toner for heat-and-pressure fixing having a heat-fusible core material containing at least a thermoplastic resin and a coloring agent and a shell formed thereon so as to cover the surface of the core material. An amorphous polyester is used as the main component of the shell, and the amount of the amorphous polyester is normally 3 to 50 parts by weight, based on 100 parts by weight of the core material. The encapsulated toner of the present invention is excellent in offset resistance, fixable even at a low temperature and excellent in blocking resistance when it is used for heat-and-pressure fixing using a heat roller.

Abstract: A resist composition comprising an alkali-soluble resin, typically a partially t-butoxycarbonylated polyhydroxystyrene, a p-butoxystyrene/t-butylacrylate copolymer or p-butoxystyrene/maleic anhydride copolymer as a dissolution inhibitor, and a iodonium or sulfonium salt as a photoacid generator is effective for forming a resist film which can be precisely and finely patterned using high energy radiation such as a KrF excimer laser.

Abstract: The present invention relates to photopolymerizable compositions comprising an addition-polymerizable compound which has at least one ethylenically unsaturated double bond; a radical-producing agent and a squarylium compound represented by the formula (I): ##STR1## The compositions are highly sensitive to visible and near infrared lights, particularly He-Ne laser, LED, diode laser, etc. having oscillation wavelengths in a wavelength region of 600 nm or more, and thus are useful as materials for holograms, presentized plates for laser direct process, dry film resists, digital proofs, photosensitive microcapsules.

Abstract: By using a polyamic acid ester comprising the following structural units (1a), (1b) and (1c) as a photosensitive resin and a sulfonamide compound or a specific glycol ether acetate as a stabilizer, a photo-sensitive resin composition excellent especially in viscosity stability can be obtained, and by using the above photosensitive resin and a specific developer, a relief pattern of high resolution can be formed.

Abstract: A phase shift mask provided with an alignment error measuring pattern which is a phase shift film pattern portion formed in a space defined between dense patterns of the phase shift mask having an alternating type pattern structure so that an error in alignment between a chromium pattern and a phase shift film pattern occurring in the fabrication of the phase shift mask can be measured by checking, through a microscope, a wafer provided with a pattern formed using the phase shift mask. The phase shift film pattern portion is arranged on the central portion of a quartz substrate.

Abstract: The present invention provides a photosensitive color proofing article incorporating an antihalation effective amount of one or more antihalation dyes of the general formula (I) shown below: ##STR1## wherein: Z is an oxygen atom, NH, or NR; R is an alkyl group of 1 to 12 carbon atoms or a hydrogen atom; R.sup.1 represents a perfluoroalkylsulfonyl group of 1 to 12 carbon atoms or an arylsulfonyl group; and R.sup.2 represents a perfluoroalkylsulfonyl group of from 1 to 12 carbon atoms; an arylsulfonyl group; or a cyano group. The antihalation dyes of formula (I) absorb radiation within the wavelength range of from about 325 to 700 nm and preferably, from about 325 to 450 nm.

Abstract: A method for manufacturing semiconductor devices includes the steps of exposing a pattern for focus measurement, formed on a surface of a reticle and comprising a two-dimensional grid pattern, to radiation and projecting the pattern for focus measurement onto a plurality of regions of an inspection wafer, on which a resist has been coated by a resist coating apparatus, using a projection exposure apparatus; developing the pattern for focus measurement projected on the inspection wafer with a developing apparatus; measuring the developed pattern for focus measurement on a plurality of regions of the inspection wafer with the projection exposure apparatus to obtain the focus position and the inclination of the plane of projection of the image of the pattern for focus measurement of the reticle, and setting the focus position and the inclination of the plane of projection in the projection exposure apparatus as a focus offset and an amount of correction of the inclination of the plane of projection; and coating

Abstract: A method and apparatus for forming a color image is disclosed which provide simply and stably color duplicates of high accuracy and high quality without color shear and color images excellent in storage stability. A method of forming color images comprising applying a compound (S) which contains a fluorine atom and/or silicon atom to the surface of electrophotographic light-sensitive element, forming a peelable transfer layer on the surface of electrophotographic light-sensitive element, forming at least one color toner image by an electrophotographic process on the transfer layer and transferring the toner image together with the transfer layer to a receiving material and an apparatus used therefor are disclosed.

Abstract: A resist film is formed on a semiconductor substrate by using a chemical amplification resist which generates an acid in response to the radiation of KrF excimer laser light and which reacts with the acid. If the resist film is irradiated with the KrF excimer laser light through a mask, the acid is generated in the surface of an exposed portion of the resist film, so that the surface of the exposed portion is made hydrophilic by the acid. If water vapor is supplied to the surface of the resist film, water is diffused from the surface of the exposed portion into a deep portion. If vapor of methyltriethoxysilane is sprayed onto the surface of the resist film in air at a relative humidity of 95%, an oxide film with a sufficiently large thickness is selectively formed on the surface of the exposed portion.