Abstract: A film forming method includes causing adsorption of a source gas on a substrate surface having a convex portion, and forming a film on the substrate surface using a thermal reaction between the adsorbed source gas and a reactive gas. The substrate is disposed on a surface of a turntable provided inside a vacuum chamber. An adsorption region in which the causing is performed, and a reaction region in which the forming is performed, are provided inside the vacuum chamber above the turntable along a circumferential direction of the turntable. The causing and the forming are repeated with respect to the substrate by rotating the turntable in a state where the source and reactive gases are supplied to the adsorption and reaction regions, respectively. At least one of the source gas supply and the reactive gas supply supplies the gas at an angle with respect to a vertically downward direction.

Abstract: A thin-film deposition and method deposits thin films on semiconductor wafers. The thin-film deposition utilizes an analysis model that dynamically selects process conditions for a next deposition process by receiving static process conditions and target thin-film data. The analysis model identifies dynamic process conditions data that, together with the static process conditions data, result in predicted thin-film data that matches the target thin-film data. The deposition method then uses the static and dynamic process conditions data for the next thin-film deposition process.

Abstract: A substrate processing method which can supply gas to a plurality of process chamber through one gas supply unit, and supply different gases at the same time, thereby improving the uniformity of the thicknesses of thin films deposited in the respective chambers. The substrate processing method can perform a process in only one chamber by supplying gas to only the chamber at the same time or perform different processes in the plurality of chambers by supplying different gases to the respective chambers. Therefore, films having uniform thicknesses can be deposited in the respective chambers, and the gas supply efficiency can be improved.

Abstract: A method includes etching a semiconductor substrate to form a trench, and depositing a dielectric layer using an Atomic Layer Deposition (ALD) cycle. The dielectric layer extends into the trench. The ALD cycle includes pulsing Hexachlorodisilane (HCD) to the semiconductor substrate, purging the HCD, pulsing triethylamine to the semiconductor substrate, and purging the triethylamine. An anneal process is then performed on the dielectric layer.

Abstract: The current disclosure relates to methods for forming a film comprising transition metal on a substrate. The disclosure further relates to a transition metal layer, to a structure and a device comprising a layer that comprises a transition metal. In the method, transition metal is deposited on a substrate by a cyclic deposition process. The method comprises providing a substrate in a reactor chamber and executing a cyclical deposition process. The cyclical deposition process comprises the steps of providing a transition metal precursor in vapor phase into the reaction chamber and providing a halogen precursor in vapor phase into the reaction chamber to form a film comprising elemental transition metal on a substrate. The halogen precursor comprises only one halogen atom. The disclosure further relates to a deposition assembly for depositing a material comprising transition metal on a substrate.

Abstract: Embodiments of the present disclosure include methods and apparatus for depositing a plurality of layers on a large area substrate. In one embodiment, a processing chamber for plasma deposition is provided. The processing chamber includes a showerhead and a substrate support assembly. The showerhead is coupled to an RF power source and a ground and includes a plurality of perforated gas diffusion members. A plurality of plasma applicators is disposed within the showerhead, wherein one plasma applicator of the plurality of plasma applicators corresponds to one of the plurality of perforated gas diffusion members. Further, a DC bias power source is coupled to a substrate support assembly.

Abstract: Methods for depositing films by atomic layer deposition using aminosilanes are provided.

Abstract: The present disclosure describes slot insulation systems for electrical rotating machines. For example, a system may include: a main insulation for a coil of the rotating machine or for an individual bar for the coil; a resin formulation serving as a slot adhesive forming a solid film. At room temperature and under standard conditions, the solid film is in an A-state. Heating the electrical rotating machine to a curing temperature for the resin formulation, the solid film firstly melts and flows within an occupied slot, then cures and solidifies to form a thermoset material.

Abstract: A method includes supporting a workpiece on a workpiece holder within a material deposition chamber. The method includes rotating the workpiece holder, tilting the workpiece holder in response to an output of a determination circuit, and controlling a temperature of the workpiece utilizing a heater on a surface of the workpiece holder. The method includes depositing a material on the workpiece. The heater includes first/second/third heating coils. The first heating coil has first/second ends and the first heating coil continuously extends between the first end and the second end. The second heating coil extends between the first/second ends of the first heating coil. The third heating coil extends between the first/second ends of the first heating coil. By using the tunable heating feature and the tilting feature of the workpiece pedestal, the present disclosure can reduce or eliminate the shadowing effect problem of the related workpiece pedestal in the art.

Abstract: A plasma coating method for coating particulate matter, including the steps of: a) providing a low-temperature atmospheric plasma jet from a plasma gas outside of the reaction chamber; b) inserting a precursor into the plasma jet, thereby obtaining a plasma coating flow comprising an excited precursor, followed by injecting the plasma coating flow comprising the excited precursor in the reaction chamber, and c) subjecting particulate matter to said plasma coating flow comprising said excited precursor, thereby obtaining particulate matter comprising an at least partial coating. a coating reactor apparatus and a system involve the plasma coating method.

Abstract: A method of forming an inorganic film on a surface can include depositing a polymer at a layer on a surface, swelling the polymer with a solvent to produce a swollen polymer on the surface, infiltrating the swollen polymer with a precursor, removing the swollen polymer after infiltrating the swollen polymer with the precursor, and forming a porous inorganic film on the surface based on removing the swollen polymer.

Abstract: A method of forming a metal oxide layer includes at least the following steps. A substrate is provided in a process chamber of a deposition apparatus, where the substrate has a target layer formed thereon. A first gas and a second gas are introduced into the process chamber through a shower head of the deposition apparatus, so as to form a metal oxide film on the target layer, where the shower head is coated with a hydrophobic film. A patterned photoresist layer is formed on the metal oxide film. The metal oxide film is patterned by using the patterned photoresist layer as a mask, so as to form a patterned metal oxide film. The target layer is patterned by using the patterned metal oxide film as a mask.

Abstract: Embodiments of the disclosure are directed to index-gradient antireflective coatings that include a differential concentration of nanovoids versus thickness of the coating. In one embodiment, an index-gradient antireflective coating may have an index of refraction that varies from a first value to that of a second material. In another embodiment, the substrate may be optically transparent, and made of, for example, polymer, glass, or ceramics. The index-gradient antireflective coating can be fabricated using a non-uniform spin-coating process, by successive thermal evaporation, or by a chemical vapor deposition (CVD) process. In another embodiment, the spin-coating process can include multiple steps that include different concentrations of monomers to solvent, different spin-speeds, or different annealing times/temperatures. Similarly, the thermal evaporation can include multiple steps that include different concentrations of monomers, initiators, solvents, and associated processing parameters.

Abstract: A method for producing coated substrates involving deposition of at least one coating layer on a surface of the substrate. The coating layer is synthesized in the interior of a vacuum coating chamber by using reactive PVD cathodic evaporation techniques. Nitrogen gas is introduced in the vacuum coating chamber to be used as reactive gas, and at least one arc evaporation source comprising a target material operated as cathode for evaporating the target material is used. The method involves a reactive deposition of aluminium titanium nitride as a result of a reaction between aluminium and titan from the target material with nitrogen from the nitrogen gas comprised in the coating chamber.

Abstract: A method for production of a porous body containing a conductive polymer comprising impregnating a porous body with a conductive polymer composition comprising component (a) a conductive polymer and component (b) a solvent, and drying the porous body after impregnation at a temperature lower than the boiling point of the solvent by 10° C. or more, followed by drying at a temperature higher than or equal to the boiling point of the solvent.

Abstract: A resin producing method is a method of producing a resin with which an insulating structure formed on an outer peripheral portion of a conductor is impregnated. The resin producing method includes a dispersion liquid mixing step of mixing an epoxy resin and a dispersion liquid in which a nanofiller is dispersed in a reactive diluent that reduces a viscosity of the epoxy resin by reacting with the epoxy resin, and a curing agent mixing step of mixing a composition produced by the dispersion liquid mixing step, with a curing agent that cures the epoxy resin. The epoxy resin includes, for example, an alicyclic epoxy resin.

Abstract: A method for producing a catalyst-coated polymer membrane for an electrolyser and/or a fuel cell includes steps including providing a glass-ceramic substrate and synthesizing a mesoporous catalyst layer on the glass-ceramic substrate. The steps include pressing a polymer membrane onto the glass-ceramic substrate coated with the catalyst layer at a first temperature T1, thereby producing a sandwich structure. The steps further include separating the sandwich structure. The catalyst layer is separated from the glass-ceramic substrate and adheres to the polymer membrane.

Abstract: The siloxanes containing compositions and methods are disclosed. The disclosed method relates to a method of depositing a dielectric film on a substrate, the method involving the steps of a) placing the substrate in a reaction chamber; b) introducing a process gas comprising a cyclic silicon-containing compound and an oxidant; and c) exposing the substrate to the process gas under conditions such that the cyclic silicon-containing compound and the oxidant react to form a flowable film on the substrate surface. The method can further involve converting the flowable film into a solid dielectric material (e.g., a silicon oxide film). In certain embodiments, conversion of the film may be accomplished by annealing the as-deposited film by a thermal, plasma anneal and/UV curing.

Abstract: This is a process for treating fibres of vegetable origin, comprising the following steps: heating the vegetable fibres by means of a radiofrequency heating oven into which an air flow previously treated with cold plasma is introduced; subjecting the vegetable fibres to a high vacuum treatment; impregnating the vegetable fibres with CO2; mixing the vegetable fibres with a binding agent. The invention also relates to the use of the treated vegetable fibres obtained by said process.

Abstract: The present disclosure provides a substrate processing method and a substrate processing apparatus that perform selective film formation. The substrate processing method includes: forming a silicon-containing film by repeating forming an adsorption layer on a substrate on which a pattern of a concave portion is formed by supplying a silicon-containing gas to the substrate and generating plasma of a reaction gas to cause the plasma to react with the adsorption layer; and etching the silicon-containing film, wherein the forming the silicon-containing film includes modifying at least one of the adsorption layer and the silicon-containing film by generating a He-containing plasma.