Abstract: The method for forming the monodisperse granular film includes: providing an initial substrate having a first surface and a second surface opposite to the first surface, forming a sacrificial layer, an adhesive layer and a monodisperse granular layer over the first surface, where the monodisperse granular layer includes multiple granules arranged dispersedly over the first surface, the sacrificial layer is between the multiple granules and the initial substrate, the adhesive layer is between adjacent granules of the multiple granules, and the adhesive layer is exposed between adjacent granules on a side of the multiple granules away from the initial substrate, dissolving and removing the initial substrate, and dissolving and removing the sacrificial layer. The embodiments of the present application are at least conducive to reducing the difficulty in forming the monodisperse granular film, and extending application scenarios of the stacked solar cell.

Abstract: A method, system and apparatus for selectively forming aluminum oxide on a first surface of a substrate relative to a second different surface of the substrate, the process comprising one or more super-cycles comprising sub-cycles: a) selectively depositing aluminum nitride on the first surface of the substrate relative to the second different surface of the substrate by one or more selective deposition sub-cycles, b) oxidizing at least a portion of the aluminum nitride by one or more oxidizing sub-cycles, c) etching the aluminum oxide or aluminum nitride, or a combination thereof by one or more thermal etching sub-cycles wherein the etchant is an organic halide, and repeating sub-cycles a), b) or c), or a combination thereof until a desired thickness of an aluminum oxide is formed on the first surface.

Abstract: A method for a cyclic deposition process includes loading a substrate into a plasma processing chamber; generating source power pulses having a pulse frequency that varies from a first frequency to a different second frequency; and performing the cyclic deposition process to deposit a plurality of layers. One cycle of the cyclic deposition process deposits one layer of the plurality of layers and includes flowing a process gas into the plasma processing chamber; powering a source electrode of the plasma processing chamber with the source power pulses to generate a plasma; and, while varying the pulse frequency applied to the source electrode from the first frequency to the second frequency, exposing the substrate to the plasma to deposit one layer of the plurality of layers onto the substrate.

Abstract: A device (1) and a process for applying a doped diamond layer to a substrate (2, 2a) by chemical vapour deposition. The device (1) has a deposition chamber for holding the substrate (2, 2a), a gas activation element (7) in the form of a hollow body with a flow channel (7b) for a process gas, in particular hydrogen, an outlet opening (16) leading from the flow channel (7b) into the deposition chamber (3), a heating device (8) for heating a wall (7a) of the gas activation element (7) surrounding the flow channel (7b) and a solid precursor, other than carbon, within the flow channel (7b).

Abstract: According to one aspect of a technique of the present disclosure, there is provided a substrate processing method including: (a) supplying a metal-containing gas to a substrate; (b) supplying a first reducing gas to the substrate; and (c) supplying a second reducing gas different from the first reducing gas to the substrate, wherein a metal-containing film is formed on the substrate by performing (a), (b) and (c) at least once.

Abstract: A selective thermal atomic layer deposition (ALD) process is disclosed. The process may comprise loading a substrate comprising a dielectric material, and a metal, into a reactor. The substrate may be reacted with a non-plasma based oxidant, thereby forming an oxidized metal surface on the metal. The substrate may be heated and exposed to a passivation agent that adsorbs more onto the oxidized metal than the dielectric material. Such exposure may form a passivation layer on the oxidized metal surface, and the substrate may be exposed to a silicon precursor that adsorbs more onto the dielectric material than the passivation layer, forming a chemi-adsorbed silicon-containing layer on the dielectric material. The substrate may be exposed to the non-plasma based oxidant, that simultaneously partially oxidizes the passivation layer, and oxidizes the chemi-adsorbed silicon-containing layer to form a silicon-containing dielectric film on the dielectric material.

Abstract: A synthesis method of a 2D material according to the present disclosure includes preparing a substrate; maintaining a first zone of a furnace and a second zone adjacent to the first zone, in which the target substrate is disposed, at a first temperature and a second temperature which is lower than the first temperature; injecting carrier gas, a transition metal precursor, and a chalcogenide precursor into the first zone of the furnace; and depositing transition metal dichalcogenide on the target substrate in the second zone at the second temperature by the chemical vapor deposition.

Abstract: Provided is a method for depositing a thin film, which is performed to deposit a thin film on a substrate. A method for depositing a thin film includes supplying a source gas together with a first diffusion gas onto a substrate provided in a process space, and supplying a reactant gas together with a second diffusion gas onto the substrate to continuous with the supplying of the source gas. The first diffusion gas and source gas and the second diffusion gas and reactant gas are supplied onto the substrate through paths different from each other.

Abstract: Vapor phase methods of depositing a metal or a semimetal—comprising materials on a substrate are provided. In the methods, various metal or semimetal precursors may be used together with reactants that may generate hydrogen radical or amino radical to react with the metal or semimetal precursor to deposit the metal or semimetal—comprising material on the substrate. Further provided are materials and structures deposited by the disclosed methods, as well as deposition assemblies.

Abstract: A high-throughput method for preparing anticorrosion coatings, includes the steps of: treating surfaces of sample substrates to be coated by removing oxide layers, and placing the treated substrates on specimen fixture trays; determining solution data based on types and composition ranges of corrosion inhibitors planned for anticorrosion coating preparation; preparing solutions based on the solution data, adding the solutions to designated test tubes, and thoroughly mixing with primer coats to obtain coating solutions; dispensing the formulated coating solutions onto the surfaces of the sample substrates to be coated using a pipette, and applying coatings using a coating application robotic arm in a high-throughput anticorrosion coating preparation platform; transferring the applied sample substrates to an ultraviolet (UV) radiation station, and performing irradiation to achieve thermal curing; and transferring the entire specimen fixture tray to a designated position using a gantry robotic arm.

Abstract: Methods of modifying properties of a cellulosic material include depositing an additive onto the cellulosic material, the additive being in a vapor phase and configured to modify one or more properties of the cellulosic material and adsorbing the additive into the cellulosic material, wherein the additive reacts with one or more functional groups of the cellulosic material. The depositing can be an atomic layer deposition of the additive onto the cellulosic material. The additive can be configured to react with a nucleophile in the cellulosic material. One or more properties of the cellulosic material can include hydrophobicity, thermal conductivity, thermal diffusivity, fungo-toxicity, toxicity, wettability, tensile strength, corrosiveness, biodegradability, bio-toxicity, or swelling.

Abstract: A method of growing a single crystal diamond material synthesized using a homoepitaxial chemical vapor deposition process. The method includes the steps of placing a free-standing diamond starting seed substrate on a substrate holder within a reaction chamber for chemical vapor deposition; feeding a process gas into the reaction chamber, the process gas including hydrogen gas; igniting a plasma within the reaction chamber to activate the process gas by adjusting the substrate temperature to increase to a first target substrate temperature; adding a carbon-containing gas to the process gas once the substrate temperature is at or near the first target substrate temperature to initiate diamond growth; and adjusting the substrate temperature to a second target substrate temperature that is different from the first target substrate temperature during the diamond growth.

Abstract: A method of selectively depositing a material on a substrate with a first and second surface, the first surface being different than the second surface. The depositing of the material on the substrate comprises: supplying a bulk precursor comprising metal atoms, halogen atoms and at least one additional atom not being a metal or halogen atom to the substrate; and supplying a reactant to the substrate. The bulk precursor and the reactant have a reaction with the first surface relative to the second surface to form more material on the first surface than on the second surface.

Abstract: Materials and methods for modifying surfaces in order to change surface energy are provided. These surface properties cause the surface to become more hydrophobic or oleophobic after light exposure. The ability to change surface energy upon exposure allows these materials to be patterned and enables a variety of uses, notably for use on semiconductor substrates in photolithography.

Abstract: A method can comprise providing a zinc precursor to a reaction chamber comprising a substrate disposed therein; providing an oxygen species to the reaction chamber; forming a zinc oxide layer on the substrate in response to providing the zinc precursor and providing the oxygen species; and/or mitigating agglomeration of the zinc oxide layer. Mitigating agglomeration of the zinc oxide layer can comprise forming a capping layer on an outer surface of the zinc oxide layer such that the outer surface of the zinc oxide layer is not exposed to ambient oxygen, doping the zinc oxide layer with another material, and/or applying a post-deposition treatment to the zinc oxide layer.

Abstract: Methods of depositing transition metal on a substrate. The disclosure further relates to a transition metal layer, to a structure and to a device comprising a transition metal layer. In the method, transition metal is deposited on a substrate by a cyclical deposition process, and the method comprises providing a substrate in a reaction chamber, providing a transition metal precursor to the reaction chamber in a vapor phase and providing a reactant to the reaction chamber in a vapor phase to form transition metal on the substrate. The transition metal precursor comprises a transition metal from any of groups 4 to 6, and the reactant comprises a group 14 element selected from Si, Ge or Sn.

Abstract: Aspects described herein provide a method of providing a precursor mixture of a first precursor and a second precursor to a reaction chamber. The method may comprise maintaining the first precursor in the first precursor vessel at a first precursor temperature and the second precursor in the second precursor vessel at a second precursor temperature. Fluid connections may be provided between the first precursor vessel and the mixing chamber, between the second precursor vessel and the mixing chamber, and between the mixing chamber and the reaction chamber. The reaction chamber is separate from the mixing chamber. The precursor mixture is formed in the mixing chamber by mixing the first precursor and the second precursor and then provided to the reaction chamber.

Abstract: A method of reducing corrosion, including coating a surface of a substrate with a corrosion inhibitor to form a coated substrate, and contacting the coated substrate with a corrosive medium, wherein the coated substrate in the corrosive medium has an icorr of less than 0.01 ?A cm?2. The corrosion inhibitor includes polyvinylidene fluoride (PVDF), and a layered double hydroxide (LDH) having a formula of X2Al, wherein X is Mg or Zn.

Abstract: Embodiments disclosed herein include a method of forming a metal-oxo photoresist. In an embodiment, the method comprises flowing a first precursor into a chamber, where the first precursor comprises a first metal. In an embodiment, the method further comprises flowing a second precursor into the chamber, where the second precursor comprises a second metal that is different than the first metal. In an embodiment, the method further comprises depositing the metal-oxo photoresist on a substrate in the chamber using a dry deposition process using the first precursor and the second precursor.

Abstract: A substrate processing method includes forming an adsorption layer on a substrate by supplying a silicon-containing gas to the substrate; performing a modification by generating plasma containing He; and generating plasma of a reaction gas to cause the plasma to react with the adsorption layer, wherein the forming the adsorption layer, the performing the modification, and the generating the plasma are repeated to form a silicon-containing film.