Abstract: Methods and systems for depositing a layer comprising silicon oxide on the substrate are disclosed. Exemplary methods include cyclical deposition methods that include providing a first silicon precursor to the reaction chamber, providing a second silicon precursor, and using a reactant or a non-reactant gas forming silicon oxide on a surface of the substrate. Exemplary methods can further include a treatment step.

Abstract: Methods for atomic layer deposition (ALD) or plasma enhanced atomic layer deposition (PEALD) of low-K films are described. A method of depositing a film comprises exposing a substrate to a silicon precursor having the general formulae (Ia), (Ib), (Ic), (Id), (IX), or (X); and exposing the substrate to an oxidant to react with the silicon-containing film to form one or more of a silicon oxycarbide (SiOC) film or a silicon oxycarbonitride (SiOCN) film on the substrate, the oxidant comprising one or more of a carboxylic acid, an aldehyde, a ketone, an ethenediol, an oxalic acid, a glyoxylic acid, a peroxide, an alcohol, and a glyoxal.

Abstract: A system and method for treating a deposition reactor are disclosed. The system and method remove or mitigate formation of residue in a gas-phase reactor used to deposit doped metal films, such as aluminum-doped titanium carbide films or aluminum-doped tantalum carbide films. The method includes a step of exposing a reaction chamber to a treatment reactant that mitigates formation of species that lead to residue formation.

Abstract: A technique capable of coping with change in the environment for each of the substrate placing surfaces is provided. According to one aspect thereof, there is provided a method of manufacturing a semiconductor device, including: (a) supplying a gas to a process vessel through branch pipes while substrates are placed on substrate placing surfaces arranged in the process vessel, respectively; (b) detecting at least one among: information of a component corresponding to each of the substrate placing surfaces; and an amount of the gas supplied to each of the branch pipes; (c) determining a state level of each of the substrate placing surfaces based on the detected information; and (d) selecting a substrate placing surface among the substrate placing surfaces to which a substrate subsequently loaded into the process vessel is to be transferred next according to the state level of each of the substrate placing surfaces.

Abstract: Provided are a precursor supply unit, a substrate processing system, and a method of fabricating a semiconductor device using the same. The precursor supply unit may include an outer container, an inner container provided in the outer container and used to store a precursor source, a gas injection line having an injection port, which is provided below the inner container and in the outer container and is used to provide a carrier gas into the outer container, and a gas exhaust line having an exhaust port, which is provided below the inner container and in the outer container and is used to exhaust the carrier gas in the outer container and a precursor produced from the precursor source.

Abstract: A method includes a step of applying an aqueous 2-package type first colored paint to form an uncured first colored coating film; a step of applying an aqueous 1-package type second colored paint to form an uncured second colored coating film; a step of applying a solvent-based 2-package type clear paint to form an uncured clear coating film; and a step of heating the uncured first colored coating film, the uncured second colored coating film and the uncured clear coating film to 75 to 100° C. to simultaneously cure these films. The solvent-based 2-package type clear paint contains a hydroxyl group-containing acrylic resin and a polyisocyanate compound in a ratio of 1.5 to 2.0 equivalents of isocyanate groups in the polyisocyanate compound relative to 1 equivalent of hydroxyl groups in the hydroxyl group-containing acrylic resin.

Abstract: This invention provides a process or fabrication method of forming broadband anti-reflective (AR) coating over the mid-IR fluoride fiber for high power laser applications in mid-IR wavelength range. The AR coating consists of multiple-pair Lithium fluoride (LiF) and Al2O3, and was deposited by electron beam physical vapor deposition with an iron assistant source at low temperature (<60° C.). A thin encapsulation layer of Al2O3 was applied over the AR coating by atomic layer deposition technology. The measurements show the coating has a reflectivity of <1-1.5% in the range of 1.5-5.5 ?m. The laser induced damage threshold (LIDT) test shows the damage threshold is greater than 8.9 MW/cm2 with no sign of any damage on the coating exposed to atmosphere. The durability and environmental tests of the AR coating with PVD coated encapsulation layer show good humidity resistance in open air and no degradation of film quality and optical performance are observed.

Abstract: Methods of forming a transition metal containing film on a substrate by a cyclical deposition process are disclosed. The methods may include: contacting the substrate with a first vapor phase reactant comprising a transition metal halide compound comprising a bidentate nitrogen containing adduct ligand; and contacting the substrate with a second vapor phase reactant comprising a reducing agent precursor. The deposition methods may also include forming a transition metal containing film with an electrical resistivity of less than 50 ??-cm at a film thickness of less than 50 nanometers.

Abstract: A method of forming structure includes providing a substrate in a reaction chamber, forming a first layer overlaying the substrate, and forming a second layer onto the first layer. Temperature of the first layer is controlled during the forming of the first layer using infrared electromagnetic radiation emitted by the first layer. Temperature of the second layer is controlled during the forming of the second layer using infrared electromagnetic radiation emitted by the second layer. Semiconductor device structures and semiconductor processing systems are also described.

Abstract: Synthetic brochosomes can be prepared by disposing a monolayer of first polymer microspheres on a substrate and forming a layer of metal on the monolayer of the first polymer microspheres. A monolayer of second polymer microspheres is then disposed on the layer of metal to form a template. The second polymer microspheres are smaller than the first polymer microspheres. A brochosome material is then electrodeposited on the template. The brochosome material is selected from the group consisting of a metal, a metal oxide, a polymer or a hybrid thereof. The first polymer microspheres and the second polymer microspheres are then removed to form a coating of synthetic brochosomes of the brochosome material on the substrate.

Abstract: A deposition method including following steps is provided. A first precursor is injected into a chamber along a first direction, and a bias power supply is turned on to attract the first precursor to a substrate. A second precursor is injected into the chamber along a second direction perpendicular to the first direction, and the bias power supply is turned on to attract the second precursor to the substrate. A first inert gas is injected into the chamber along the first direction, and the bias power supply is turned off to purge an unnecessary part of the first precursor or an unnecessary part of the second precursor or a by-product. A second inert gas is injected the chamber along the second direction, and the bias power supply is turned off to purge the unnecessary part of the first precursor or the unnecessary part of the second precursor or the by-products.

Abstract: A method includes the selection of a jewelry blank having a chamber for receiving a gem. The chamber is partially filled with a first layer of UV resin. Cremation remains are placed within the first layer of resin or on the surface of the first layer of resin. Then, UV light is used to cure the first layer of resin. A second layer of resin partially fills the remaining void and is cured. Diamond dust may be added to the top surface of the cured second layer. A final layer of protective resin is added into the remaining space of the chamber and cured to create the finished jewelry piece.

Abstract: A device for a plasma processing chamber includes a base, an upper portion attached to the base and extending transverse to the base, and one or more first through holes defined in the base. The one or more first through holes correspond to one or more openings defined in the plasma processing chamber for attaching the device. The device further includes a second through hole defined in the upper portion, and a gauge located in the second through hole, the gauge configured for recording a position of the plasma processing chamber and a shift in the position of the plasma processing chamber.

Abstract: A method of forming a tungsten-containing layer over a substrate includes a) positioning a substrate on a substrate support in a process volume of a process chamber; b) providing a precursor gas to the process volume of the process chamber for a first duration; and c) providing a tungsten-containing gas to the process volume of the process chamber by opening a pulsing valve on a tungsten-containing gas delivery line for a second duration occurring after the first duration to form a tungsten-containing layer on the substrate. The tungsten-containing gas delivery line includes a first section connected to an inlet of the pulsing valve and a second section connected to an outlet of the pulsing valve, the first section connects the inlet of the pulsing valve to a reservoir of tungsten-containing gas, the second section connects the outlet of the pulsing valve to an inlet of the process chamber.

Abstract: Exemplary deposition methods may include delivering a silicon-containing precursor and a boron-containing precursor to a processing region of a semiconductor processing chamber. The methods may include providing a hydrogen-containing precursor with the silicon-containing precursor and the boron-containing precursor. A flow rate ratio of the hydrogen-containing precursor to either of the silicon-containing precursor or the boron-containing precursor is greater than or about 1:1. The methods may include forming a plasma of all precursors within the processing region of a semiconductor processing chamber. The methods may include depositing a silicon-and-boron material on a substrate disposed within the processing region of the semiconductor processing chamber.

Abstract: A method for producing a fiber for reinforcing rubber, comprising applying an adhesion treatment liquid containing a thermoplastic elastomer, a blocked polyisocyanate, and a rubber latex to a fiber cord to obtain a fiber for reinforcing rubber, wherein the thermoplastic elastomer is incorporated in the form of a water dispersion into the adhesion treatment liquid, wherein the thermoplastic elastomer particles in the water dispersion have an average particle diameter of 0.01 to 1.0 ?m.

Abstract: A coating method for preparing diamond thin film continuously by HFCVD device includes the steps of: (a) carbonizing left and right chamber hot filaments; (b) disposing a substrate on a platform along with a trolley in a sample access chamber under vacuum condition; opening a left chamber gate valve and moving the substrate to left thin film growth chamber; closing the left chamber gate valve to grow diamond thin film on the substrate; (c) repeating step (b) by using a right chamber gate valve and right thin film growth chamber to grow diamond thin film; (d) opening the left chamber gate valve and moving the substrate to the sample access chamber; closing the left chamber gate valve and dropping to room temperature while under vacuum condition; releasing the vacuum condition and taking out the substrate with diamond thin film; (e) repeating step (d) for the right chamber gate valve.

Abstract: Processes for depositing silicon-containing films (e.g., silicon, amorphous silicon, silicon oxide, silicon nitride, silicon carbide, silicon oxynitride, silicon carbonitride, doped silicon films, and metal-doped silicon nitride films) are performed using halidosilane precursors. Examples of halidosilane precursor compounds described herein, include, but are not limited to, monochlorodisilane (MCDS), monobromodisilane (MBDS), monoiododisilane (MIDS), monochlorotrisilane (MCTS), and monobromotrisilane (MBTS), monoiodotrisilane (MITS).

Abstract: A chemical vapor deposition (CVD) process for producing diamond includes providing a CVD Growth Chamber containing a growth substrate, charging the CVD growth chamber with a source gas mixture that includes a carbon source gas, activating the gas mixture to facilitate growth of diamond on the growth substrate, and providing for a period of diamond growth in a static mode during which the gas mixture is sealed within the CVD growth chamber.

Abstract: A method of forming a lithium (Li)-based film, may include: supplying a Li source material into a reaction chamber in which a substrate is disposed; supplying phosphor (P) and oxygen (O) source materials and a nitrogen (N) source material into the reaction chamber; and generating plasma in the reaction chamber to form a Li-based film on the substrate from the Li, P, O, and N source materials, wherein the supplying of the Li source material into the reaction chamber and the supplying of the P and O source materials and the N source material into the reaction chamber are performed with a time interval, and wherein the Li source material supplied into the reaction chamber is deposited on the substrate, and the P and O source materials supplied into the reaction chamber are adsorbed on the Li source material.