Abstract: Processes for depositing silicon-containing films (e.g., silicon, amorphous silicon, silicon oxide, silicon nitride, silicon carbide, silicon oxynitride, silicon carbonitride, doped silicon films, and metal-doped silicon nitride films) are performed using halidosilane precursors. Examples of halidosilane precursor compounds described herein, include, but are not limited to, monochlorodisilane (MCDS), monobromodisilane (MBDS), monoiododisilane (MIDS), monochlorotrisilane (MCTS), and monobromotrisilane (MBTS), monoiodotrisilane (MITS).

Abstract: A chemical vapor deposition (CVD) process for producing diamond includes providing a CVD Growth Chamber containing a growth substrate, charging the CVD growth chamber with a source gas mixture that includes a carbon source gas, activating the gas mixture to facilitate growth of diamond on the growth substrate, and providing for a period of diamond growth in a static mode during which the gas mixture is sealed within the CVD growth chamber.

Abstract: A method of forming a lithium (Li)-based film, may include: supplying a Li source material into a reaction chamber in which a substrate is disposed; supplying phosphor (P) and oxygen (O) source materials and a nitrogen (N) source material into the reaction chamber; and generating plasma in the reaction chamber to form a Li-based film on the substrate from the Li, P, O, and N source materials, wherein the supplying of the Li source material into the reaction chamber and the supplying of the P and O source materials and the N source material into the reaction chamber are performed with a time interval, and wherein the Li source material supplied into the reaction chamber is deposited on the substrate, and the P and O source materials supplied into the reaction chamber are adsorbed on the Li source material.

Abstract: Method for treating in an enclosure an inner surface of a container made from polymer material, in order to deposit a barrier coating there on, comprises: inserting the container into the enclosure; introducing a precursor gas into the container intended, once transformed into the plasma state, to be deposited at least partially on the inner surface of the container in order to constitute the coating; wherein the method further comprises: transforming the precursor gas into the plasma state by a combination of excitations comprising a main excitation by means of electromagnetic waves comprising microwaves, and a secondary excitation by means of an electrical discharge of alternating voltage having a frequency between 1 kHz and 15 MHz.

Abstract: Methods of forming a vanadium nitride-containing layer comprise providing a substrate within a reaction chamber of a reactor and depositing a vanadium nitride-containing layer onto a surface of the substrate, wherein the deposition process comprises providing a vanadium precursor to the reaction chamber and providing a nitrogen precursor to the reaction chamber.

Abstract: Methods are provided for depositing a transition metal nitride-containing material on a substrate in the field of manufacturing semiconductor devices. Methods according to the current disclosure comprise a cyclic deposition process, in which a substrate is provided in a reaction chamber, an organometallic transition metal precursor is provided to the reaction chamber in a vapor phase, and a nitrogen precursor is provided into the reaction chamber in a vapor phase to form a transition metal nitride on the substrate. A transition metal nitride layer, a semiconductor structure and a device, as well as a deposition assembly for depositing a transition metal nitride on a substrate are further provided.

Abstract: A film may be formed on a surface of a substrate by chemical vapor deposition in a reaction container provided with at least a first holding member that is capable of holding the substrate and a second holding member that is capable of holding the substrate independently from the first holding member, by: (a) forming a film on the surface of the substrate by chemical vapor deposition while holding the substrate by the first holding member; (b) moving at least one holding member among the first holding member and the second holding member in at least one direction of the upward direction and the downward direction to hold the substrate by the second holding member instead of the first holding member; and (c) forming a film on the surface of the substrate held by the second holding member by chemical vapor deposition.

Abstract: Methods of depositing transition metal on a substrate. The disclosure further relates to a transition metal layer, to a structure and to a device comprising a transition metal layer. In the method, transition metal is deposited on a substrate by a cyclical deposition process, and the method comprises providing a substrate in a reaction chamber, providing a transition metal precursor to the reaction chamber in a vapor phase and providing a reactant to the reaction chamber in a vapor phase to form transition metal on the substrate. The transition metal precursor comprises a transition metal from any of groups 4 to 6, and the reactant comprises a group 14 element selected from Si, Ge or Sn.

Abstract: The manufacture of semiconductor devices may include methods of forming vanadium metal on a substrate. The methods comprise providing a substrate in a reaction chamber, providing a vanadium precursor to the reaction chamber in a vapor phase and providing a reducing agent to the reaction chamber in a vapor phase to form vanadium metal on the substrate.

Abstract: Methods for forming a dielectric film comprising silicon and carbon onto at least a surface of a substrate includes introducing into a reactor one or more compounds represented by the structure of Formula IA and compounds represented by the structure of Formula IB: as defined herein.

Abstract: A technique includes: (a) modifying a surface of a first base exposed on a surface of a substrate to be terminated with a hydrocarbon group by supplying a hydrocarbon group-containing gas to the substrate having the first base and a second base exposed on the surface of the substrate; and (b) forming a film on a surface of the second base by supplying an oxygen- and hydrogen-containing gas to the substrate after modifying the surface of the first base.

Abstract: Methods and related apparatus for depositing an ashable hard mask (AHM) on a substrate include pulsing a low frequency radio frequency component at a high power. Pulsing low frequency power may be used to increase the selectivity or reduce the stress of an AHM. The AHM may then be used to etch features into underlying layers of the substrate.

Abstract: Apparatus for supplying vaporized reactants to a reaction chamber are described herein. In some embodiments, a showerhead assembly for depositing multiple materials on a substrate includes a plurality of gas delivery portions, each gas delivery portion having an inlet, a wedge shaped body that defines a plenum, and a plurality of openings disposed on a bottom surface of the gas delivery portion, wherein each of the plenums are fluidly isolated from each other.

Abstract: A plasma processing method including: a process of placing a work piece on a stage provided in a chamber, the work piece including a substrate and a holding member having an adhesive layer on a surface and holding the substrate via the adhesive layer, and having an exposed portion where the adhesive layer is exposed outside the substrate; and a plasma etching process of etching the substrate with a plasma generated in the chamber, with the exposed portion exposed to the plasma. In response to occurrence of an interruption in the plasma etching process, a cleaning process of exposing a surface of the substrate to a plasma containing an oxidizing gas is performed, and then the plasma etching process is resumed.

Abstract: A method for depositing material is disclosed. An exemplary method includes positioning a substrate provided with a stepped structure comprising a top surface, a bottom surface, and a sidewall in a reaction chamber; controlling a pressure of the reaction chamber to a process pressure; providing a precursor; providing a reactant; and, providing a plasma with a RF plasma power, wherein by simultaneously providing the precursor, the reactant, and the plasma while controlling the process pressure to less than or equal to 200 Pa and controlling the RF plasma power to more than or equal to 0.21 W per cm2 the material is deposited on the top surface, the bottom surface, and the sidewall of the stepped structure.

Abstract: The present invention provides a photoplasma etching device and a method of manufacturing the same, and more particularly to a member for a plasma etching device, which is improved in plasma resistance through deposition of a rare-earth metal thin film and surface heat treatment and the optical transmittance of which is maintained, thus being useful as a member for analyzing the end point of an etching process, and a method of manufacturing the same.

Abstract: Methods of depositing a molybdenum sulfide film with increased sulfur:molybdenum ratio are described. The methods include pre-cleaning a dielectric material with oxygen radicals prior to formation of a molybdenum sulfide film that has a lower oxygen content than would be formed without the pre-cleaning.

Abstract: Described is a process for producing adhesive-coated articles, wherein an aqueous dispersion adhesive composition comprising a dispersed adhesive polymer and a dissolved polyvinylpyrrolidone is applied at high web speed to a film substrate using a coating machine having at least one rotating roller and wherein the coated film substrate may optionally be bonded to a further substrate. Also described is the use of polyvinylpyrrolidone as a defoamer for aqueous dispersion adhesive compositions applied to a film substrate using a coating machine having a rapidly rotating roller.

Abstract: Methods for generating one or more atmospheric pressure plasma jets that can be used to deposit various types of conductive traces, coatings, and micro/nano-sized particles/structures on two or three dimensional body surfaces. The method includes generating atmospheric pressure plasma, nebulizing a precursor to generate an aerosol; receiving the aerosol from the nebulizer in a chamber; mixing the atmospheric pressure plasma with the aerosol from the chamber at a nozzle; and printing the plasma-exposed aerosol onto the surface of a substrate.

Abstract: A method of making a multi-composition fiber is provided, which includes providing a precursor laden environment, and forming a fiber in the precursor laden environment using laser heating. The precursor laden environment includes a primary precursor material and an elemental precursor material. The formed fiber includes a primary fiber material and an elemental additive material, where the elemental additive material has too large an atom size to fit within a single crystalline domain within a crystalline structure of the fiber, and is deposited on grain boundaries between adjacent crystalline domains of the primary fiber material to present an energy barrier to atomic diffusion through the grain boundaries, and to increase creep resistance by slowing down growth between the adjacent crystalline domains of the primary fiber material.