Abstract: A method of processing each of a plurality of substrates comprises: obtaining a first correction factor based on a first flow rate set value of a mass flow controller and a first measurement value of a mass flow meter; adjusting the first flow rate set value of the mass flow controller with the first correction factor so that the flow rate of the vaporized raw material becomes equal to a target value to process the substrate; obtaining a second correction factor based on a second flow rate set value of the mass flow controller and a second measurement value of the mass flow meter; and adjusting the second flow rate set value of the mass flow controller with the second correction factor so that the flow rate of the vaporized raw material becomes equal to the target value to process the substrate.

Abstract: A film-forming apparatus includes a processing container having a vacuum atmosphere therein, a stage having a heater and disposed in the processing container to load a substrate thereon, a gas discharge mechanism provided at a position to face the stage, and an exhaust part configured to exhaust an inside of the processing container. The gas discharge mechanism includes a gas intake port configured to introduce a processing gas into the processing container, a first plate-shaped member having a first opening formed in a more radially outward position than the gas intake port and a shower plate disposed between the first plate-shaped member and the stage to supply the processing gas from the first opening to a process space through a plurality of gas holes.

Abstract: A substrate processing system configured to perform a deposition process on a substrate includes a substrate support including a plurality of zones and a plurality of resistive heaters arranged throughout the plurality of zones. The plurality of resistive heaters includes separately-controllable resistive heaters arranged in respective ones of the plurality of zones. A controller is configured to, during the deposition process, control the plurality of resistive heaters to selectively adjust temperatures within the plurality of zones.

Abstract: Methods of forming metal-containing films by atomic layer deposition are provided. The methods include delivering a metal-containing complex, a purge gas, and a co-reactant to a first substrate under sufficient conditions such that the metal-containing film selectively grows on at least a portion of the first substrate.

Abstract: Internally cooled multi-hole injectors to deliver process chemicals are provided. An internal channel in an injector for the delivery system delivers process chemicals, such as a gas precursor, to a reaction space or substrate within a process chamber through multiple holes formed by outlets. A cooling delivery path and a cooling return path for cooling chemicals are positioned adjacent the supply channel to cool the process chemicals internally within the injector. The cooling process can be controlled to achieve a target cooling level for the process chemicals within the channel. In operation, undesired deposits are reduced thereby extending the time between product maintenance cycles. Further, the delivery and return flow of the cooling chemicals helps to stimulate a more evenly distributed temperature for the supply channel. Still further, the disclosed embodiments can be used in high-temperature environments, such as above about 400 degrees Celsius.

Abstract: The disclosure describes techniques for forming hard magnetic materials including ??-Fe16N2 using chemical vapor deposition or liquid phase epitaxy and hard materials formed according to these techniques. A method comprises heating an iron source to form a vapor comprising an iron-containing compound; depositing iron from the vapor comprising the iron-containing compound and nitrogen from a vapor comprising a nitrogen-containing compound on a substrate to form a layer comprising iron and nitrogen; and annealing the layer comprising iron and nitrogen to form at least some crystals comprising ??-Fe16N2.

Abstract: A method for reducing metal contamination performed after dry cleaning of a process chamber used for a film deposition process and before starting the film deposition process is provided. In the method, a temperature in the process chamber is changed from a first temperature during the dry cleaning to a film deposition temperature. Hydrogen and oxygen are activated in the vacuum chamber while supplying hydrogen and oxygen into the process chamber. An inside of the process chamber is coated by performing the film deposition process without a substrate in the process chamber after the step of activating hydrogen and oxygen.

Abstract: Methods are provided for selectively depositing a material on a first surface of a substrate relative to a second, different surface of the substrate. The selectively deposited material can be, for example, a metal, metal oxide, or dielectric material.

Abstract: A method includes etching a semiconductor substrate to form a trench, and depositing a dielectric layer using an Atomic Layer Deposition (ALD) cycle. The dielectric layer extends into the trench. The ALD cycle includes pulsing Hexachlorodisilane (HCD) to the semiconductor substrate, purging the HCD, pulsing triethylamine to the semiconductor substrate, and purging the triethylamine. An anneal process is then performed on the dielectric layer.

Abstract: Methods for atomic layer deposition (ALD) of plasma enhanced atomic layer deposition (PEALD) of low-? films are described. A method of depositing a film comprises exposing a substrate to a silicon precursor having the general formula (I) or general formula (II) wherein X is silicon (Si) or carbon (C), Y is carbon (C) or oxygen (O), R1, R2, R3, R4, R5, R6, R7, and R8 are independently selected from hydrogen (H), substituted or unsubstituted alkyl alkyl, substituted or unsubstituted alkoxy, substituted or unsubstituted vinyl, silane, substituted or unsubstituted amine, or halide; purging the processing chamber of the silicon precursor; exposing the substrate to an oxidant; and purging the processing chamber of the oxidant.

Abstract: A thin film formation method includes setting a film formation subject to 200° C. or higher. A first step includes changing a first state, in which a film formation material and a carrier gas are supplied so that the film formation material collects on the film formation subject, to a second state, in which the film formation material is omitted. A second step includes changing a third state, in which a hydrogen gas and a carrier gas are supplied to reduce the film formation material, to a fourth state, in which the hydrogen gas is omitted. The film formation material is any one of Al(CxH2x+1)3, Al(CxH2x+1)2H, and Al(CxH2x+1)2Cl. The first step and the second step are alternately repeated to form an aluminum carbide film on the film formation subject such that a content rate of aluminum atoms is 20 atomic percent or greater.

Abstract: An apparatus for direct liquid injection (DLI) of chemical precursors into a processing chamber is provided. The apparatus includes a vaporizer assembly having an injection valve for receiving a liquid reactant, vaporizing the liquid reactant, and delivering the vaporized liquid reactant. The injection valve includes a valve body encompassing an interior region therein, a gas inlet port, a liquid inlet port, and a vapor outlet port all in fluid communication with the interior region. The vaporizer assembly further includes a first inlet line having a first end fluidly coupled with the liquid inlet port and a second end to be connected to a liquid source. The vaporizer assembly further includes a second inlet line with a first end fluidly coupled with the gas inlet port, a second end fluidly coupled with a carrier gas source, and a heater positioned between the first end and the second end.

Abstract: A method of non-line-of-sight coating of a sand screen for use in wellbores during the production of hydrocarbon fluids from subterranean formations. The coating can have uniformly coated internal and external surfaces.

Abstract: In a substrate processing method, a cleaning process is performed at a first temperature to remove a portion of a cumulative layer that is deposited within a chamber by deposition processes (step 1). The deposition processes are performed at the first temperature on a plurality of substrates within the chamber respectively (step 2). The step 1 and the step 2 are performed alternately and repeatedly.

Abstract: Methods for forming a nucleation layer on a substrate. In some embodiments, the processing method comprises sequential exposure to a first reactive gas comprising a metal precursor and a second reactive gas comprising a halogenated silane to form a nucleation layer on the surface of the substrate.

Abstract: Methods for selectively depositing oxide thin films on a dielectric surface of a substrate relative to a metal surface are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a first precursor comprising oxygen and a species to be included in the oxide, such as a metal or silicon, and a second plasma reactant. In some embodiments the second plasma reactant comprises a plasma formed in a reactant gas that does not comprise oxygen. In some embodiments the second plasma reactant comprises plasma generated in a gas comprising hydrogen.

Abstract: Disclosed are methods of synthesizing and using Titanium-containing film forming compositions comprising titanium halide-containing precursors to deposit Titanium-containing films on one or more substrates via vapor deposition processes.

Abstract: A method for coating temperature-sensitive substrates with polycrystalline diamond by a hot-wire CVD method, in which hydrogen and at least one carbon carrier gas are fed into a coating chamber. The fed gases are split at an electrically heated wire in such a way that carbon is formed and deposits on the temperature-sensitive substrate in the form of the diamond modification thereof. The substrate is arranged in the coating chamber, which is at a reduced pressure, and electrical power to electrically heat the wire is adjustable. The method is performed cyclically in respect of the electrical power that is fed to electrically heat the wire. A basic power is fed as lower threshold value for a predetermined time (basic load phase) and is increased for a further predetermined time to a maximum power as an upper threshold value (pulse phase) and is then reduced again to the basic power.

Abstract: Provided are methods of directly growing a carbon material. The method may include a first operation and a second operation. The first operation may include adsorbing carbons onto a substrate by supplying the carbons to the substrate. The second operation may include removing unreacted carbon residues from the substrate after suspending the supplying the carbons of the first operation. The two operations may be repeated until a desired graphene is formed on the substrate. The substrate may be maintained at a temperature less than 700° C. In another embodiment, the method may include forming a carbon layer on a substrate, removing carbons that are not directly adsorbed to the substrate on the carbon layer, and repeating the two operations until desired graphene is formed on the substrate. The forming of the carbon layer includes supplying individual carbons onto the substrate by preparing the individual carbons.

Abstract: In a method for depositing a layer of amorphous hydrogenated silicon carbide (SiC:H), a gas mixture comprising a reactive gas to inert gas volume ratio of 1:12 to 2:3 is introduced into a reaction chamber of a plasma-enhanced chemical vapor deposition apparatus. The reactive gas has a ratio of Si of 50 to 60, C of 3 to 13, and H of 32 to 42 at %. The inert gas comprises i) a first inert gas selected from helium, neon and mixtures; and ii) a second inert gas selected from argon, krypton, xenon and mixtures. The reaction plasma is at a power frequency of 1-16 MHz at a power level of 100 W to 700 W. The resulting layer exhibits a refractive index of not less than 2.4 and a loss of not more than 180 dB/cm at an indicated wavelength within 800 to 900 nm.