Abstract: A plasma mass spectrometer comprises a plasma torch (1) for generating ions from a sample introduced into a plasma (2), a nozzle-skimmer interface (3,5) for transmitting said ions into a first evacuated chamber (11), ion guiding means (12), an apertured diaphragm (18) dividing said first evacuated chamber (11) from a second evacuated chamber, and an ion mass-to-charge ratio analyzer in the second chamber for producing a mass spectrum. The ion guiding means comprises a multipole rod-set (13,14,15), means for applying an AC voltage between rods in the set, and means (22) for introducing into said ion guiding means an inert gas selected from the group comprising helium, neon, argon, krypton, xenon and nitrogen so that the partial pressure of said inert gas inside said rod-set is at least 10−3 torr. Interfering peaks in the spectrum, such as Ar, are thereby reduced.

Abstract: A charged particle beam irradiation apparatus for irradiating a target with a charged particle beam emitted from an accelerator includes a plurality of scanning electromagnets, and a quadrupole electromagnet is used between two of the plurality of the scanning electromagnets.

Abstract: The invention concerns an “in situ” ion-etching device for local thinning of a sample in a transmission electron microscope (1) with simultaneous electron microscopic observation. Towards this end, an ion beam device (2) is arranged in such a way that the finest possible ion probe is produced at the sample location and can be scanned over the sample surface. The ion beam (16) and sample (10) thereby enclose the flattest possible angle. To compensate for the magnetic field of the objective lens (5), the ion beam (16) is defected along a curved path onto the sample (10). In a preferred embodiment, an electrostatic cylinder capacitor sector field effects double focusing. The ion probe can be positioned, via the scanned ion image, onto a selected region of the sample by the secondary electrons (22) released from the sample (10). The sample location can be observed during the ion thinning process in electron transmission or electron diffraction.

Abstract: The electron beam projection exposure apparatus of the present invention reduces the incidence of defects in patterns formed by exposure on a substrate and includes an illumination optical system for generating an electron beam, a mask placed in a prescribed location including a mask stage for aligning and scanning the mask, a projection-imaging optical system for projecting an image of a pattern formed on the mask onto a substrate with the substrate including a substrate stage for positioning and scanning the substrate. The electron beam projection exposure apparatus further includes at least one filter placed in the proximity of the mask for filtering dust and for preventing dust particles from inhibiting the passage of the electron beam to said substrate.

Abstract: The present invention relates to a thermal signaling device. The signaling device generally comprises a container including a thermal emitting surface and an interior space, and at least one heat source disposed within the interior space of the container. In operation, the heat source is activatable to heat the thermal emitting surface such that the thermal emitting surface can be detected by a thermal sensing system.

Abstract: The present invention provides a method of extending, i.e. prolonging, the operating lifetime of hot cathode discharge ion source by utilizing and introducing a nitrogen-containing co-bleed gas into an ion implantation apparatus which contains at least a hot cathode discharge ion source and an ion implantation gas such as GeF4.

Abstract: A signal having a resonant frequency of a cantilever is output by a first oscillator, and supplied to a vibrating element and a control unit to oscillate a probe. A low frequency signal having a large amplitude is output by a second oscillator and supplied to a piezoelectric scanning apparatus. The probe is periodically and relatively moved with respect to the sample between a position where the sample surface is penetrated by the probe and another position where the probe does not penetrate the sample surface and is outside the range of atomic forces caused by the sample. During this movement, the probe movement may be analyzed to obtain a plurality of physical characteristics about the sample, e.g.

Abstract: A specially designed magnetic shunt is provided encircling the anode region and/or annular gas distribution area of an ion accelerator with closed electron drift. The magnetic shunt is constructed to concentrate the magnetic field at the ion exit end, such that the location of maximum magnetic field strength is located downstream from the inner and outer magnetic poles of the accelerator. The specially designed shunt also results in desired curvatures of magnetic field lines upstream of the line of maximum magnetic field strength, to achieve a focusing effect for increasing the life and efficiency of accelerator. The anode of the accelerator can diffuse ionizable gas through a porous plate for an even distribution of the gas in the distribution area.

Abstract: An E-beam generator and detector arrangement sends an electron beam through a series of differentially evacuated vacuum chambers of small size to detect faulty circuitry in individual semiconductor devices. The vacuum chambers are open to one end and are sealed by the semiconductor device without contacting the vacuum chambers. A laser generator is operated by a control system with the E-beam generator and detector arrangement to provide a laser beam in a known physical relationship to the electron beam to correct detected faulty circuitry in the semiconductor devices. The E-beam generator and detector arrangement confirms the correction without further handling of the semiconductor device.

Abstract: Methods and apparatus are disclosed for reducing thermal deformation of “upstream” marks (as used for alignment and/or calibration) situated on a reticle or on a reticle plane (e.g., on the reticle stage), thereby facilitating more accurate transfer of the reticle pattern to a sensitized substrate (e.g., semiconductor wafer) using a charged particle beam (e.g., electron beam). The charged particle beam illuminates an upstream mark situated on the reticle or on a reticle plane and projects an image of the illuminated upstream mark onto a corresponding “downstream” mark situated on a substrate plane. A shield is situated upstream of the upstream mark and serves to block downstream passage of the charged particle beam except to illuminate the upstream mark or a portion of the upstream mark. The upstream mark can be situated on the reticle or on a mark member situated in the reticle plane.

Abstract: Multiple sample introduction means have been configured in Atmospheric Pressure Ion sources which are interfaced to mass analyzers. Different samples can be introduced through multiple Electrospray (ES) or Atmospheric Pressure Chemical Ionization (APCI) probes individually or simultaneously and ionized. The gas phase ion mixture resulting from individual solutions sprayed from multiple ES or APCI probe inputs is mass analyzed. In this manner a calibration solution can be introduced through one ES or APCI probe while one or more sample solutions are spray from additional probes. Simultaneous spraying of calibration and sample solutions, results in an acquired mass spectrum containing peaks of ions with known molecular weights as well as sample related peaks. The calibration peaks can be used as an internal calibration standard during data analysis.

Abstract: A specially designed magnetic shunt is provided encircling the anode region and/or annular gas distribution area of an ion accelerator with closed electron drift. The magnetic shunt is constructed to concentrate the magnetic field at the ion exit end, such that the location of maximum magnetic field strength is located downstream from the inner and outer magnetic poles of the accelerator. The specially designed shunt also results in desired curvatures of magnetic field lines upstream of the line of maximum magnetic field strength, to achieve a focusing effect for increasing the life and efficiency of accelerator.

Abstract: Each of the longitudinal and lateral widths of a beam size is varied by a beam size controller using a reference size (absolute dimensions) defined by a reference size defining portion as a reference. The beam size is subjected to two-dimensional variations (pseudo-variations) by combining such one-dimensional variations. Current amount measuring portion measures current amount corresponding to the two-dimensional variations of the beam size, and measured values are estimated from the current amount. An offset amount calculating portion calculates optimum values of constants of beam size correction formulae such that the offset amount from each set value is minimized or such that conformity to the size of the pattern to be transferred on the sample is achieved. The feedback of the optimum values is provided to the beam size correction formulae. Beam size correction can be carried out with high accuracy even in ultrafine regions less than 1.

Abstract: A pulse discharge is caused between an electrode in an insulating nozzle 2 jetting a gas in vacuum and a skimmer 8. An apparatus for performing the method includes an insulating nozzle 2 perforated with a gas jet hole 2a at a front end thereof and having a needle-like electrode 5 at an inside thereof, and includes a skimmer 8 formed in a funnel-like shape and having an opening portion 8a at a front end thereof. The opening 8a is arranged at a position remote from the gas jet hole 2a of the insulating nozzle 2 by a predetermined distance. The method and apparatus can be used in the field of measurement, material synthesis and the like with an object of surface science, and can form simultaneously and with high intensity both pulsed metastable atom beam and pulsed ultraviolet radiation which can be preferably used as a probe for investigating the electronic state at a surface of a substance and several layers on the inner side of the surface.

Abstract: An adsorption plate formed of a carrier and a precious metal catalyst carried by the carrier is provided at that portion of at least one of a beam column and a sample chamber incorporated in a charged-particle beam apparatus, in which carbon compounds may be generated. Further, a precious metal catalyst is provided on each deflector electrode contained in the beam column.

Abstract: In the electron beam drawing method, the optimal irradiation amount of an electron beam in accordance with a drawing area ratio at each of drawing positions, is obtained prior to drawing a desired pattern by irradiating an electron beam on a sample. The optimal irradiation amount obtained is separated in a plurality of gradations as a correction amount for a reference irradiation amount of the electron beam. This separation is made finer as the drawing area ratio is higher. The representative correction amount data is determined for each of the plurality of gradations. The representative correction amount data determined is stored for each of the plurality of gradations, and a pattern is drawn on a sample with the optical irradiation amount corresponding to read data of the representative correction amount stored.

Abstract: Segmented reticles are disclosed for used with charged-particle-beam projection-microlithography apparatus. Such reticles comprise multiple mask subfields and a support grid, of intersecting struts, having an upstream-facing surface and a downstream-facing surface. Alignment marks are situated on the upstream- or downstream-facing surface. The projection-microlithography apparatus comprise a beam source, an illumination system, and a subfield-selection deflector. A second deflector downstream of the reticle further deflects the beam to impart a change in a parameter of the beam to correct reticle distortion. A correction-optical system can further change one or more characteristics of the beam downstream of the reticle to correct reticle distortion. A detector determines actual alignment-mark positions relative to ideal positions, and a controller calculates therefrom a required change to be imparted to the charged particle beam to correct the reticle distortion.

Abstract: An organic substance analyzer, which comprises a irradiating unit for irradiating a specimen containing organic substances with an electron beam, a spectrum detecting unit for detecting spectrum of fluorescent light emitted from said specimen, a storage unit for storing a shape of a reference spectrum of fluorescent light of each specific type of organic substance when the electron beam is irradiated on said specific type of organic substance, and a searching unit for classification and identifying organic substances in the specimen by comparing the shape of said stored reference spectrum with that of said detected spectrum, whereby the electron beam having higher energy than light is irradiated the specimen for analysis, fluorescent light with spectrum in wider range is emitted from the specimen even in ultraviolet range, and organic substances in the specimen are discriminated and identified by comparing shapes of the measured spectral pattern obtained from the fluorescent light with a reference spectral pa

Abstract: A technique for analyzing ions by determining the time of flight of the ions from a source before detection at a detector. In the technique a series of pulses is generated according to an encoded sequence. Pulses from the series of pulses are selected to launch a plurality of packets of ions from the source, each of the selected pulses launching a packet of ions such that ions launched in the adjacent packets overlap prior to reaching the detector. At the end of the series another cycle of the series is generated again and some of the pulses in the series are selected in the another cycle to launch a plurality of packets of ions from the source. The cycles of pulse generation and selection to launch ions are repeated. The time of arrival of the ions of each packet in the detector is determined to obtain signals corresponding to overlapping spectra of the time of arrival of the packets of ions.

Abstract: There is provided an apparatus used for forming a pattern on a substrate by photolithography with electron beams, the apparatus including (a) an aperture formed with at least one opening through which electron beams are to pass, and (b) a holder for fixedly supporting the aperture therewith by means an adhesive, at least one of surfaces of the aperture and the holder at which the aperture is adhesively fixed to the holder, being formed with at least one groove for excessive portion of the adhesive to flow in. When an aperture is fixed onto a holder with an adhesive, an adhesive may be excessively applied on a surface of the aperture or holder. However, in accordance with the above-mentioned apparatus, since excessive adhesive is pooled in the groove, it is possible to avoid the excessive adhesive from being forced out to the opening of the aperture, and thus, it is possible to avoid forming an incorrect pattern on a photoresist film.