Abstract: A FinFET device structure and method for forming the same is provided. The FinFET device structure includes an isolation structure formed over a substrate, and a gate structure formed over the isolation structure. The FinFET device structure includes a first dielectric layer formed over the isolation structure and adjacent to the gate structure and a source/drain (S/D) contact structure formed in the first dielectric layer. The FinFET device structure also includes a deep contact structure formed through the first dielectric layer and adjacent to the S/D contact structure. The deep contact structure is through the isolation structure, and a bottom surface of the S/D contact structure is higher than a bottom surface of the deep contact structure.

Abstract: An apparatus for manufacturing a display device and a method of manufacturing the display device are provided. The apparatus for manufacturing the display device includes: a mounting unit, on which a display substrate may be arranged; an inspection unit movably arranged on the mounting unit and configured to inspect whether or not an organic encapsulation layer of the display substrate is defective; and a repair unit movably arranged on the mounting unit and configured to supply an organic material to a defective portion of the organic encapsulation layer, or to remove at least a portion of the defective portion of the organic encapsulation layer.

Abstract: A method of manufacturing a display device may include sequentially forming a first conductive layer, a second conductive layer including copper (Cu), a third conductive layer, and a fourth conductive layer on a substrate, patterning the first conductive layer, the second conductive layer, the third conductive layer, and the fourth conductive layer together to form a conductive pattern including a first layer, a second layer, a third layer, and a fourth layer sequentially on the substrate, removing the fourth layer of the conductive pattern, forming a protective layer covering at least a sidewall of the conductive layer on the substrate, and forming a display element on the protective layer.

Abstract: A display device includes a substrate including a trench portion. The substrate includes a display area and a peripheral area adjacent to the display area. The display area includes a first display area and a second display area arranged with the trench portion therebetween to display an image. A thin-film transistor and a display element are each arranged in the display area. A built-in circuit portion is over the peripheral area and is adjacent to the trench portion. A first wiring is in the first display area and a second wiring is in the second display area. A connecting wiring connects the first wiring to the second wiring and overlaps the built-in circuit portion.

Abstract: Various aspects of a light extraction substrate, an organic light emitting device, and methods of fabrication are provided. A light extraction substrate of an organic light-emitting device includes a light-scattering layer disposed on a base substrate and contains a first material, and a number of holes (hole diameters ranging from 350 nm to 450 nm) extending between the first surface and the second surface. A planarization layer (thickness not greater than 200 nm) is disposed on the light-scattering layer and contains a second material.

Abstract: A display, a jig and a method for making the display, and a terminal equipment are provided. The display includes a display body. Further, at least one side wall of the display body is provided with a waterproof coating.

Abstract: A laser irradiation apparatus includes a laser generation device, a levitation unit to levitate an object to which the laser light is applied, and a conveyance unit to convey the levitated object. The conveyance unit includes a holding mechanism for holding the object by absorption, and a moving mechanism for moving the holding mechanism in a conveyance direction. The holding mechanism includes a base including a plurality of through holes, a plurality of pipes respectively connected to the through holes, a vacuum generation device configured to evacuate air from the pipes, and a plurality of absorption assistance valves each disposed in the middle of a respective one of the pipes, each of the plurality of absorption assistance valves being configured to be closed when a flow rate of a gas flowing into the pipe through the through hole becomes equal to or higher than a threshold.

Abstract: A method for fabrication of a semiconductor structure according to some embodiments of the present disclosure comprises following steps. A first mandrel is formed over a target layer over a substrate, wherein the first mandrel comprises a mandrel island connecting a first mandrel strip and a second mandrel strip. A first spacer is formed along first and second sidewalls of the mandrel island, the first mandrel strip, and the second mandrel strip. The first mandrel is then removed, and the target layer is patterned with the first spacer remains over the target layer. The first mandrel strip and the second mandrel strip are misaligned from one another.

Abstract: A method of manufacturing a display apparatus includes: forming a plurality of display devices in a display area of a substrate including an opening area and the display area surrounding the opening area; and forming an opening in the opening area, wherein the forming of the opening includes: performing a first scan operation, whereby a laser beam is irradiated onto an edge of the opening area in a direction of the substrate along a plurality of first unit paths; and performing a second scan operation, whereby the laser beam is irradiated onto the edge of the opening area in the direction of the substrate along a plurality of second unit paths that are different from the plurality of first unit paths.

Abstract: An apparatus for manufacturing a display device, includes: a heater which generates heat; a pressing member which contacts a target object of a display device to transfer the heat to the target object; a body connected to each of the heater and the pressing member and through which the heat from the heater is provided to the pressing member; and a first housing cover extended from the body to surround the pressing member and the body in a plan view. Engagement of the first housing cover with the target object defines an internal space of the first housing cover having a temperature, and measurement by the apparatus, of the temperature of the internal space, controls bonding of layers of the target object to each other.

Abstract: Various aspects of an OLED and related methods of manufacturing are provided, wherein a light extraction substrate of an OLED includes a base substrate; a porous light-scattering layer, including a first material, and having a plurality of holes formed therein; a planarization layer formed on the light-scattering layer, and including a second material; and a plurality of scattering structures including the second material, and formed by the second material infiltrated from the planarization layer into the light-scattering layer to fill at least a part of the plurality of holes, the scattering structures including a plurality of second scattering structures.

Abstract: A method of and system for adhesive bonding by a) providing a polymerizable adhesive composition on a surface of an element to be bonded to form an assembly; b) irradiating the assembly with radiation at a first wavelength capable of vulcanization of bonds in the polymerizable adhesive composition by activation of sulfur-containing compound with at least one selected from x-ray, e-beam, visible, or infrared light to thereby generate ultraviolet light in the polymerizable adhesive composition; and c) adhesively joining two or more components together by way of the polymerizable adhesive composition, and a curable polymer for use therein.

Abstract: An organic electroluminescent device, a method for fabricating the same, and a light emitting apparatus are disclosed. The organic electroluminescent device comprises a first light emitting layer and a second light emitting layer arranged on a surface of the first light emitting layer at a first side, and partially covers the surface of the first light emitting layer at the first side. Both the first and second light emitting layers are made from a material which has a larger mobility for a first carrier than a second carrier. Light emitting regions of the second light emitting layer and the regions of the first light emitting layer not covered by the second light emitting layer are configured to emit light of different colors at a preset light emitting ratio. A light emitting area ratio between a surface of each light emitting region and surfaces of the regions of the first light emitting layer not covered by the second light emitting layer is preset according to the preset light emitting ratio.

Abstract: A non-transitory, computer-readable recording medium stores therein a reinforcement learning program that uses a value function and causes a computer to execute a process comprising: estimating first coefficients of the value function represented in a quadratic form of inputs at times in the past than a present time and outputs at the present time and the times in the past, the first coefficients being estimated based on inputs at the times in the past, the outputs at the present time and the times in the past, and costs or rewards that corresponds to the inputs at the times in the past; and determining second coefficients that defines a control law, based on the value function that uses the estimated first coefficients and determining input values at times after estimation of the first coefficients.

Abstract: A method for encapsulating openings in a display area includes: forming an intermediate layer having an isolation hole and an assembly via on a substrate, the isolation hole dividing the intermediate layer into separate display portion and isolation portion and the assembly via being spaced apart from the isolation hole by the isolation portion; forming a groove on a side of the isolation portion facing the display portion and/or on a side of the isolation portion away from the display portion; forming a light emitting layer including a first light emitting portion, a second light emitting portion, a third light emitting portion, and a fourth light emitting portion, wherein the third light emitting portion is separate from at least one of the second light emitting portion and the fourth light emitting portion; and forming an encapsulation layer that covers the light emitting layer and the isolation portion, and is filled in a groove.

Abstract: The present application relates to a method for preparing an organic electronic device, and the organic electronic device prepared by the same, the method for preparing an organic electronic device can improve flatness and adhesion of an organic layer in a process of sealing an organic electronic element to effectively block moisture or oxygen from the outside, thereby securing the lifetime of the organic electronic device.

Abstract: A technique for obtaining good film quality in forming a silicon-oxide-containing insulating film as a coating film on a substrate. A coating liquid containing polysilazane is applied to a wafer, a solvent in the coating liquid is volatilized, and then the coating film is irradiated with ultraviolet rays under a nitrogen atmosphere before performing a curing process. Thus, dangling bonds are likely to be formed at hydrolyzed portions in polysilazane. Since dangling bonds are formed in advance at portions in silicon to be hydrolyzed, productivity of hydroxyl groups is enhanced. That is, since an energy required for hydrolysis is reduced, the number of the portions remaining without being hydrolyzed is reduced even when the curing process is performed at a low temperature. Therefore, dehydration synthesis occurs efficiently, which increases a crosslinking rate and makes it possible to form a dense (good film quality) insulating film.

Abstract: Provided is a semiconductor device, including a substrate including a pixel region, a gate structure on the substrate in the pixel region, wherein the gate structure comprises a gate dielectric layer and a gate conductive layer on the gate dielectric layer; a dielectric layer located over the substrate and the gate structure; and a contact located in the dielectric layer and electrically connected to the gate conductive layer. The contact includes a doped polysilicon layer in contact with the gate conductive layer; a metal layer located on the doped polysilicon layer, wherein a part of the metal layer is embedded in the doped polysilicon layer; a barrier layer located between the metal layer and the doped polysilicon layer; and a metal silicide layer located between the barrier layer and the doped polysilicon layer.

Abstract: A thin film encapsulation structure includes a first barrier layer encapsulating a to-be-encapsulated structure on a substrate; an organic layer on the first barrier layer; a second barrier layer encapsulating the organic layer; a masking layer on the second barrier layer, orthographic projections of the second barrier layer, the first barrier layer and the masking layer on the substrate substantially overlap with each other, and a material of the masking layer has a smaller etching rate than a material of the second barrier layer.

Abstract: A compound represented by formula (A): wherein Ar, R1 to R7, R11 to R14, R21 to R24, R31 to R34, *1, and R41 to R48 are as defined in the description provides organic electroluminescence devices with improved device performance.