Abstract: A display device includes a substrate having a red pixel region, a blue pixel region, and a green pixel region. An anode is on the substrate, a light-emitting layer is on the anode, and a cathode is on the light-emitting layer, wherein the light-emitting layer includes a red light-emitting layer emitting red light on the red pixel region, a blue light-emitting layer emitting blue light on the blue pixel region, and a green light-emitting layer emitting green light on the red pixel region, the blue pixel region, and the green pixel region. Each of the red light, the blue light, and the green light is resonated between the anode and the cathode.

Abstract: A method of converting films is disclosed. A method of modifying films is also disclosed. Some methods advantageously convert films from a first elemental composition to a second elemental composition. Some methods advantageously modify film properties without modifying film composition.

Abstract: An embodiment provides a lighting device comprising: a conversion unit including an optical layer having a plurality of optical patterns; a light emitting element for emitting light toward the optical patterns; and a circuit board on which the light emitting element is disposed, wherein the plurality of optical patterns are spaced apart from each other in a first direction and extend in a second direction intersecting the first direction, and the optical layer has a curvature in the first direction.

Abstract: A semiconductor device includes a field effect transistor (FET). The FET includes a first channel, a first source and a first drain; a second channel, a second source and a second drain; and a gate structure disposed over the first and second channels. The gate structure includes a gate dielectric layer and a gate electrode layer. The first source includes a first crystal semiconductor layer and the second source includes a second crystal semiconductor layer. The first source and the second source are connected by an alloy layer made of one or more Group IV element and one or more transition metal elements. The first crystal semiconductor layer is not in direct contact with the second crystal semiconductor layer.

Abstract: To obtain a vapor-deposition mask that suppresses heat conduction at a frame of the vapor-deposition mask and make the weight thereof lighter to achieve upsizing of the vapor-deposition mask and carry out high-definition vapor-deposition cheaply, the frame (15) to which a mask main body (10) is bonded is formed as a sandwich structure (150) in which end plate (152) is bonded onto an opposing surface of at least a part of a core portion (151) in the vapor-deposition mask disclosed in the present embodiment.

Abstract: Embodiments of the present disclosure generally relate to methods for forming an organic light emitting diode (OLED) device. Forming the OLED device comprises depositing a first barrier layer on a substrate having an OLED structure disposed thereon. A first sublayer of a buffer layer is then deposited on the first barrier layer. The first sublayer of the buffer layer is cured with a mixed gas plasma. Curing the first sublayer comprises generating water from the mixed gas plasma in a process chamber in which the curing occurs. The deposition of the first sublayer and the curing of the first sublayer is repeated one or more times to form a completed buffer layer. A second barrier layer is then deposited on the completed buffer layer.

Abstract: A semiconductor device includes a substrate, a plurality of solders, and a semiconductor chip. The plurality of solders are located adjacent to each other. At least one of composition and concentration of the plurality of solders is different from each other. The semiconductor chip includes a joining surface to be joined to the substrate with the plurality of solders. The joining surface of the semiconductor chip includes a plurality of joining areas in which heat generation of the semiconductor chip or a stress on an object to be joined is different from each other. The plurality of solders are disposed to correspond to the plurality of joining areas, respectively.

Abstract: The present disclosure relates to a semiconductor device, a solid-state image pickup element, an image pickup device, and an electronic apparatus that are enabled to reduce restrictions on materials and restrictions on device configuration. A CSP imager and a mounting substrate are connected together with a connection portion other than a solder ball. With such a configuration, restrictions on materials and restrictions on device configuration are reduced, which has conventionally occurred because it is limited to a configuration in which solder balls are used for connection. The present disclosure can be applied to image pickup devices.

Abstract: The present application provides a display panel comprising a substrate, a light-emitting device disposed on the substrate, a first inorganic layer and a second inorganic layer sequentially covering the light-emitting device; wherein the density of the second inorganic layer is larger than that of the first inorganic layer, so as to improve the barrier properties against water and oxygen of the display panel. The present application further provides a manufacturing method of a display panel. The encapsulation for the display panel can be improved in the present application.

Abstract: This disclosure provides a mask module, a method for manufacturing a film layer, and a method for manufacturing an organic electromagnetic light-emitting display panel. The mask module is configured to manufacture a display substrate. The display substrate has at least one display area. The display area has at least one island pattern. The mask module includes at least two open type masks. Each of the open type masks has an opening area corresponding to at least one of the display areas. The opening areas of the open type masks corresponding to the same display area are not overlapped with each other, and the open type masks are stitched to constitute a joint and a blocking structure. The joint has a shape as same as that of the display area, and the blocking structure has a shape as same as that of the island pattern.

Abstract: An electronic device comprises: an electronic component; a resin molded body in which the electronic component is embedded and fixed; and a bendable bend portion continuous with the resin molded body. For example, the bend portion is molded integrally with the resin molded body. Thus, electronic device can be reduced in size and thickness.

Abstract: A magnetoresistive effect element includes a first ferromagnetic layer and a tunnel barrier layer. The tunnel barrier layer has a main body region and a first interface region. The main body region has an oxide material of a first spinel structure represented by a general formula LM2O4. The first interface region has at least one element X selected from a group consisting of elements having a valence of 2 and elements having a valence of 3 excluding Al and has an oxide material of a second spinel structure represented by a general formula DG2O4(D represents one or more kinds of elements including Mg or the element X, and G represents one or more kinds of elements including Al or the element X). A content of the element X contained in the first interface region is larger than that of the element X contained in the main body region.

Abstract: A flexible OLED display panel is disclosed. The panel includes a flexible substrate, multiple pixel units disposed on the flexible substrate and arranged as a matrix, and a thin-film encapsulation covering on the multiple pixel units, wherein the flexible substrate is provided with a water-oxygen barrier layer, the multiple pixel units are located on the water-oxygen barrier layer, a spacer wall is disposed between any two adjacent pixel units, the spacer wall is integrally formed with the water-oxygen barrier layer, in a thickness direction of a flexible OLED display panel, and the spacer wall is extended to the thin-film encapsulation layer from the water-oxygen barrier layer. The present invention also discloses a manufacturing method for flexible OLED display panel and a display device including the flexible OLED display panel as described above. The invention can improve the stress release capability of the flexible OLED display panel when being bent.

Abstract: Embodiments of the invention are directed to a method of forming a nanosheet transistor. A non-limiting example of the method includes forming a nanosheet stack having alternating layers of channel nanosheets and sacrificial nanosheets, wherein each of the layers of channel nanosheets includes a first type of semiconductor material, and wherein each of the layers of sacrificial nanosheets includes a second type of semiconductor material. The layers of sacrificial nanosheets are removed from the nanosheet stack, and layers of replacement sacrificial nanosheets are formed in the spaces that were occupied by the sacrificial nanosheets. Each of the layers of replacement sacrificial nanosheets includes a first type of non-semiconductor material.

Abstract: An organic light-emitting diode (OLED) display device is provided in the present invention, including a flexible substrate, a thin film transistor (TFT) layer, an OLED light emitting layer, a light extraction film layer, an inorganic protection film layer, and a packaging film layer. The light extraction film layer includes a first light extraction film layer and a second light extraction film layer. A nano-imprint process is performed on the second light extraction film layer to form a micro-lens array. The present invention also provides a manufacturing method of the OLED display device.

Abstract: The mounting apparatus includes: a bonding head 14 that bonds, while pressing, a semiconductor chip 100 onto a substrate 110 or another semiconductor chip 100; and a heating mechanism 16 that heats the semiconductor chip 100 from the side during the execution of this bonding. After two or more semiconductor chips 100 are stacked while being bonded by temporary pressure-bonding, the bonding head 14 heats and applies pressure to an upper surface of the resultant stacked body, thereby integrally pressure-bonding the two or more semiconductor chips 100, and at the time of this pressure-bonding the heating mechanism 16 heats the stacked body from the side.

Abstract: A three-dimensional semiconductor memory device may include a substrate including a cell array region and a pad region, a first conductive line on the cell array region and the pad region of the substrate, a second conductive line between the first conductive line and the substrate, the second conductive line including a first portion on the cell array region and a second portion on the pad region and exposed by the first conductive line in a plan view, a first edge pattern between the substrate and the first conductive line and between the first and second portions of the second conductive line, and a first cell contact plug on the pad region of the substrate that penetrates the first conductive line and the first edge pattern.

Abstract: Example features relate to a method of polishing a chamfered wafer surface, the method including beveling a wafer to generate the chamfered wafer surface, the chamfered wafer surface being inclined with respect to a main wafer surface by an angle ?; and polishing the chamfered wafer surface with a polishing pad, a polishing surface of the polishing pad being inclined with respect to the chamfered wafer surface by an angle ?; wherein the angle ? is equal to or smaller than the angle ?. Example features relate to a system for polishing the chamfered surface, the system including a polishing pad mounting jig configured to polish the chamfered surface, an angle ? being defined between the chamfered surface and the main surface; and a polishing pad in contact with the chamfered surface at an angle ? during polishing; wherein the angle ? is smaller than the angle ?.

Abstract: A method of fabricating a semiconductor device includes the following steps. A substrate is provided. The substrate includes a pixel region having a first conductive region and a logic region having a second conductive region. A dielectric layer is formed on the substrate to cover the first conductive region. A first contact opening is formed in the dielectric layer to expose the first conductive region. A doped polysilicon layer is sequentially formed in the first contact opening. A first metal silicide layer is formed on the doped polysilicon layer. A second contact opening is formed in the dielectric layer to expose the second conductive region. A barrier layer and a metal layer are respectively formed in the first contact opening and the second contact opening.

Abstract: A display screen includes: a flexible display panel, and a flexible protective layer covering a light-emitting surface of the flexible display panel, wherein a side surface of the flexible protective layer facing away from the flexible display panel is a light-emitting side surface, and an anti-reflection structure is disposed on the light-emitting side surface. An unevenness feel on a surface of the display screen can be reduced, thereby improving performance of a foldable product such as a foldable terminal.