Abstract: Methods, systems, and devices for channel modulation for a memory device are described. A system may include a memory device and a host device coupled with the memory device. The system may be configured to communicate a first signal modulated using a first modulation scheme and communicate a second signal that is based on the first signal and that is modulated using a second modulation scheme. The first modulation scheme may include a first quantity of voltage levels that span a first range of voltages, and the second modulation scheme may include a second quantity of voltage levels that span a second range of voltages different than (e.g., smaller than) the first range of voltages. The first signal may include write data carried over a data channel, and the second signal may include error detection information based on the write data that is carried over an error detection channel.

Abstract: Methods, systems, and devices for erroneous bit discovery in a memory system are described. A controller or memory controller, for example, may read a code word from a memory medium. The code word may include a set of bits that each correspond to a respective Minimum Substitution Region (MSR) of the memory medium. Each MSR may include a portion of memory cells of the memory medium and be associated with a counter to count a quantity of erroneous bits in each MSR. When the controller identifies a quantity of erroneous bits in the code word using an error control operation, the controller may update values of counters associated with respective MSRs that correspond to the quantity of erroneous bits to count erroneous bit counts for each MSR. In some cases, the controller may perform operations described herein as part of a background operation.

Abstract: A memory system includes a non-volatile memory and a controller that includes a first memory and is configured to write log data to the first memory, including a history of commands for controlling the memory system. An information processing system includes the memory system and an information processing device configured to store an expected value and to transmit a signal that instructs the memory system to stop when a value of the log data transmitted from the memory system does not match the expected value. The expected value and the transmitted value are determined based on the log data of the memory system.

Abstract: A system includes a memory device and a processing device coupled to the memory device. The processing device is configured to switch an operating mode of the memory device between a test mode and a non-test mode. The system further includes a test mode access component that is configured to access the memory device while the memory device is in the test mode to perform a test mode operation.

Abstract: A memory controller includes an interface and a processor. The interface communicates with a plurality of memory cells. The processor produces one or more readouts by reading a group of the memory cells using one or more Read Voltages (RVs). Based on the readouts, the processor calculates for a given RV among the RVs a sample of an error signal indicative of a deviation between the given RV and an optimal RV that results in a minimal number of errors in reading the memory cells in the group. The processor applies a filter to the sample of the error signal so as to produce an updated value of the given RV, the filter includes one or more filter taps storing data related to previous samples of the error signal, and reads a second group of the memory cells using the updated value of the given RV.

Abstract: A receiver is provided. The receiver includes: a first decoder configured to decode a superposition-coded signal by using a parity check matrix to generate Low Density Parity Check (LDPC) information word bits and first parity bits corresponding to a first layer signal; an encoder configured to encode the LDPC information word bits and the first parity bits to generate second parity bits, or encode the LDPC information word bits to generate the first parity bits and the second parity bits, by using the parity check matrix; and a second decoder configured to decode a signal which is generated by removing the first layer signal, corresponding to the LDPC information word bits, the first parity bits, and the second parity bits, from the superposition-coded signal, to reconstruct bits transmitted through the second layer signal.

Abstract: A storage device includes a nonvolatile memory device, and a controller that reads first data from the nonvolatile memory device. When a number of first errors of the first data is not smaller than a first threshold value, the controller determines whether the first errors include timing errors arising from a variation of signal transmission timings between the nonvolatile memory device and the controller and performs a retraining operation on the signal transmission timings when the first errors include the timing errors.

Abstract: An address and command port interface selectively enables JTAG TAP domain operations and Trace domain operations within an IC. The port carries TMS and TDI input and TDO output on a single pin and receives a clock signal on a separate pin. The addressable two pin interface loads and updates instructions and data to the TAP domain within the IC. The instruction or data update operations in multiple ICs occur simultaneously. A process transmits data from an addressed target device to a controller using data frames, each data frame comprising a header bit and data bits. The logic level of the header bit is used to start, continue, and stop the data transmission to the controller. A data and clock signal interface between a controller and multiple target devices provides for each target device to be individually addressed and commanded to perform a JTAG or Trace operation.

Abstract: A memory is provided that is configured to practice a sleep mode without retention in which a both bitcell array and a memory periphery are powered down responsive to an assertion of sleep mode without retention control signal. The sleep mode without retention control signal is also asserted during a DVS scan to power down the bitcell array. The memory includes a power management circuit that responds to an assertion of a DVS scan control signal to prevent the assertion of the sleep mode without retention control signal from causing a power down of the memory periphery during the DVS scan. The memory periphery may thus be thoroughly tested by the DVS scan because leakage current from the bitcell array is prevented by the powering down of the bitcell array.

Abstract: Systems, apparatuses, and methods for error detection and recovery when streaming data are described. A system includes one or more companion direct memory access (DMA) subsystems for transferring data. When an error is detected for a component of the companion DMA subsystem(s), the operations performed by the other components need to gracefully adapt to this error so that operations face only a minimal disruption. For example, while one or more consumers are still consuming a first frame, a companion router receives an indication of an error for a second frame, causing the companion router to send a router frame abort message to a route manager. In response, the route manager waits until the consumer(s) are consuming the second frame before sending them a frame abort message. The consumer(s) flush their pipeline and transition to an idle state waiting for a third frame after receiving the frame abort message.

Abstract: Disclosed is a method of operating a storage controller which communicates with a non-volatile memory device. The method includes outputting a first command including a request for on-chip valley search (OVS) count data of a memory region of the non-volatile memory device to the non-volatile memory device, wherein the OVS count data include a first count value of a first read voltage and a second count value of a second read voltage, receiving the OVS count data from the non-volatile memory device, determining a first error count value for the first read voltage and a second error count value for the second read voltage, based on the OVS count data, and determining a subsequent operation, based on the first and second error count values.

Abstract: Disclosed herein is an apparatus that includes a data terminal, a memory cell array, a mode register storing a plurality of operation parameters, and an output circuit configured to output, in response to a read command, an incorrect data to the data terminal instead of a correct data read from the memory cell array when a predetermined one of the operation parameters indicates a test mode.

Abstract: Methods, systems, and devices for operating a memory device are described. An error correction bit flipping scheme may include methods, systems, and devices for performing error correction of one or more bits (e.g., a flip bit) and for efficiently communicating error correction information. The data bits and the flip bit (e.g., an error corrected flip bit) may be directly transmitted (e.g., to a flip decision component). The flip bit may be transmitted to the flip decision component over a dedicated and/or unidirectional line that is different from one or more other lines that carry data bits (e.g., to the flip decision component).

Abstract: Embodiments relate to a system, program product, and method for integrating compiler-based testing in post-silicon validation. The method includes generating a test program through a device-under-test (DUT). The method also includes generating a plurality of memory intervals and injecting the plurality of memory intervals into the test program. The method further includes injecting a plurality of compiled test snippets into the test program and executing one or more post-silicon validation tests for the DUT with the test program.

Abstract: The present disclosure relates to a pre-5th-Generation (5G) or 5G communication system to be provided for supporting higher data rates Beyond 4th-Generation (4G) communication system such as Long Term Evolution (LTE). A channel encoding method in a communication or broadcasting system includes identifying an input bit size, determining a block size (Z), determining an LDPC sequence for LDPC encoding, and performing the LDPC encoding based on the LDPC sequence and the block size.

Abstract: A hybrid volatile/non-volatile memory employs a relatively fast, durable, and expensive dynamic, random-access memory (DRAM) cache to store a subset of data from a larger amount of relatively slow and inexpensive nonvolatile memory (NVM). The memory supports error-detection and correction (EDC) techniques by allocating a fraction of DRAM storage to information calculated for each unit of stored data that can be used to detect and correct errors. An interface between the DRAM cache and NVM executes a wear-leveling scheme that aggregates and distributes NVM data and EDC write operations in a manner that prolongs service life.

Abstract: Disclosed is a system comprising a memory component having a plurality of memory cells capable of being in a plurality of states, each state of the plurality of states corresponding to a value stored by the memory cell, and a processing device, operatively coupled with the memory component, to perform operations comprising: obtaining, for the plurality of memory cells, a plurality of distributions of threshold voltages, wherein each of the plurality of distributions corresponds to one of the plurality of states, classifying each of the plurality of distributions among one of a plurality of classes, generating a vector comprising a plurality of components, wherein each of the plurality of components represents the class of a respective one of the plurality of distributions, and processing, using a classifier, the generated vector to determine a likelihood that the memory component will fail within a target period of time.

Abstract: Aspects of the present disclosure configure a system component, such as memory sub-system controller, to defer performance of an error-correction parity calculation for a block of a memory components of the memory subsystem. In particular, a memory sub-system controller of some embodiments can defer (e.g., delay) performance of an error-correction parity calculation and can defer the error-correction parity calculation such that it is performed at a time when the memory sub-system satisfies an idle state condition.

Abstract: Disclosed is a memory device including an error logic unit suitable for determining whether an error is present in command signals to generate a command error signal; a replica delay circuit suitable for replicating a delay value of the error logic unit and generating an input strobe signal by delaying a strobe signal of the command signals; an output strobe signal generation circuit suitable for generating an output strobe signal activated after a command error latency elapses from a time point at which the command signals are received; and a pipe circuit suitable for receiving and storing the command error signal in response to the input strobe signal and outputting the stored command error signal in response to the output strobe signal.

Abstract: A system can validate multiple nonvolatile random-access memory (NVRAM) devices in parallel. The system can concurrently write a first data to a first volatile memory of a first NVRAM device and a second NVRAM device. The system can modify a first electrical power source that provides an electrical power output that is received by the first NVRAM device and is received by the second NVRAM device to modify a voltage of the electrical power from a first value to a second value to initiate the first NVRAM device and the second NVRAM device to respectively perform a vault. The system can reset the first electrical power source, causing the first NVRAM device and the second NVRAM device to reset. The system can verify whether the first NVRAM device and the second NVRAM device respectively store the first data in volatile memory subsequent to performing the resetting.