Abstract: A system can validate multiple nonvolatile random-access memory (NVRAM) devices in parallel. The system can concurrently write a first data to a first volatile memory of a first NVRAM device and a second NVRAM device. The system can modify a first electrical power source that provides an electrical power output that is received by the first NVRAM device and is received by the second NVRAM device to modify a voltage of the electrical power from a first value to a second value to initiate the first NVRAM device and the second NVRAM device to respectively perform a vault. The system can reset the first electrical power source, causing the first NVRAM device and the second NVRAM device to reset. The system can verify whether the first NVRAM device and the second NVRAM device respectively store the first data in volatile memory subsequent to performing the resetting.

Abstract: Memory devices, systems including memory devices, and methods of operating memory devices are described, in which a host device may directly access a portion of memory array that is otherwise reserved for ECC functionality of a memory device. The memory array may correspond to a set of memory addresses, where each memory address of the set corresponds to a first portion of the memory array (e.g., user data plane) and to a second portion of the memory array (e.g., ECC plane). The second portion may be configured to store ECC data or second user data or metadata based on whether the ECC functionality is enabled or disabled. The memory device may determine a command directed to the memory address of the set is configured to access the first portion or the second portion based on a status of a pin associated with the command.

Abstract: Various embodiments include methods and devices for portion interleaving for asymmetric size memory portions. Embodiments may include determining an asymmetric memory portion assignment for an interleave unit, determining a consumed address space offset for consumed address space of a memory, modifying an address of the interleave unit using the consumed address space offset, and assigning the interleave unit to an interleave granule in the asymmetric memory portion using the modified address in a compact manner before assigning another interleave unit to another interleave granule. Embodiments may include receiving an address of memory access request in a memory, mapping the address to an interleave granule in an asymmetric memory portion, assigning consecutive interleave units to the interleave granule while the interleave granule has unused space before assigning another interleave unit to another interleave granule, and implementing the memory access request at the mapped address.

Abstract: A method by a network device for detecting data in a data stream. The method includes receiving the data stream, where the data stream includes a sequence of original characters, generating a sequence of type-mapped characters corresponding to the sequence of original characters, converging each of two or more consecutive occurrences of a first character in the sequence of type-mapped characters into a single occurrence of the first character, searching for occurrences of one or more predefined sequences of characters in the sequence of type-mapped characters, and responsive to finding an occurrence of any of the one or more predefined sequences of characters, extracting a sequence of characters in the sequence of original characters corresponding to the occurrence of the predefined sequence of characters found in the sequence of type-mapped characters.

Abstract: A memory device includes a plurality of pins, a controller die coupled to the isolation pin, and a memory die. The plurality of pins include an isolation pin, a test mode select pin configured to switch an operation mode of the memory die, a test clock pin configured to receive a test clock, and a test data pin configured to perform a data transmission. The controller die is coupled to the isolation pin. The memory die is coupled to the test mode select pin, the test clock pin, and the test data pin.

Abstract: Glitch detection in microelectronic devices, and related methods, devices, and systems, are described herein. A device may detect and compare a number of pulses of a signal to a timing aperture to determine if any of the number of pulses is a glitch. The timing aperture, which may be based on a timing signal and/or one or more pulse width thresholds, may define an acceptable pulse versus a problematic glitch.

Abstract: Methods, systems, and devices for operating memory cell(s) using a direct-input column redundancy scheme are described. A device that has read data from data planes may replace data from one of the planes with redundancy data from a data plane storing redundancy data. The device may then provide the redundancy data to an error correction circuit coupled with the data plane that stored the redundancy data. An output of the error correction circuit may be used to generate syndrome bits, which may be decoded by a syndrome decoder. The syndrome decoder may indicate whether a bit of the data should be corrected by selectively reacting to inputs based on the type of data to be corrected. For example, the syndrome decoder may react to a first set of inputs if the data bit to be corrected is a regular data bit, and react to a second set of inputs if the data bit to be corrected is a redundant data bit.

Abstract: A receiver receives a radio signal from a transmitter of a wireless communication system serving a plurality of receivers. The radio signal includes for the plurality of receivers served by the transmitter a plurality of control messages and a redundant control message for at least one of the control messages. The receiver detects a control message from the radio signal, and, responsive to detecting the control message, the receiver detects a signal from another location in the radio signal. The receiver determines the detected control message as a specific control message for the receiver based on the signal detected from the other location.

Abstract: A processing device, operatively coupled with the memory device, is configured to determine a first error rate associated a first set of pages of a plurality of pages of a data unit of a memory device, and a second error rate associated with a second set of pages of the plurality of pages of the data unit, determine a first pattern of error rate change for the data unit based on the first error rate and the second error rate, and responsive to determining that the first pattern of error rate change corresponds to a predetermined second pattern of error rate change, perform an action pertaining to defect remediation with respect to the data unit.

Abstract: Memory devices, systems including memory devices, and methods of operating memory devices are described, in which a host device may access a group of memory cells (e.g., portion of an array configurable to store ECC parity bits) otherwise reserved for ECC functionality of a memory device. The memory device may include a register to indicate whether its ECC functionality is enabled or disabled. When the register indicates the ECC functionality is disabled, the memory device may increase a storage capacity available to the host device by making the group of memory cells available for user-accessible data. Additionally or alternatively, the memory device may store metadata associated with various operational aspects of the memory device in the group of memory cells. Moreover, the memory device may modify a burst length to accommodate additional information to be stored in or read from the group of memory cells.

Abstract: In a transmission method according to one aspect of the present disclosure, a encoder performs error correction coding on an information bit string to generate a code word. A mapper modulates a first bit string in which the number of bits is the predetermined integral multiple of (X+Y) in the code word using a first scheme, the first scheme being a set of a modulation scheme in which an X-bit bit string is mapped to generate a first complex signal and a modulation scheme in which a Y-bit bit string is mapped to generate a second complex signal, and modulates a second bit string in which the first bit string is removed from the code word using a second scheme different from the first scheme.

Abstract: The present disclosure relates to a pre-5th-Generation (5G) or 5G communication system to be provided for supporting higher data rates Beyond 4th-Generation (4G) communication system such as Long Term Evolution (LTE). The present disclosure discloses a method for effective retransmission when HARQ is applied to data encoded with a low density parity check (LDCP) code. A data transmission method of the transmitter may include: initially transmitting data encoded with an LDPC code to a receiver; receiving a negative acknowledgement (NACK) from the receiver; determining retransmission related information for data retransmission; and retransmitting, in response to the NACK, LDPC-encoded data based on the retransmission related information.

Abstract: The present disclosure generally relates to an embedded physical layer (EPHY) for a field programmable gate array (FPGA). The EPHY for the FPGA is for a testing device that can receive and transmit in both the high speed PHYs, as well as low speed PHYs, such as MIPI PHYs (MPHYs), to meet universal flash storage (UFS) specifications. The testing device with the EPHY for the FPGA provides flexibility to support any specification updates without the need of application specific (ASIC) production cycles.

Abstract: A memory device includes a first memory die of a plurality of memory dies, the first memory die comprising a first memory array and a first power management component, wherein the first power management component is configured to send a first test value to one or more other power management components on one or more other memory dies of the plurality of memory dies during a first power management cycle of a first power management token loop.

Abstract: An integrated circuit (IC) device and a method for communicating test data utilizes test control circuitry, and a test controller. The test controller is coupled with the test control circuitry and decodes packetized test pattern data to identify configuration data for the test controller and test data for the test control circuitry. The test controller further communicates the test data to the test control circuitry, and packetizes resulting data received from the test control circuitry. The resulting data corresponds to errors identified by a test performed based on the test pattern data.

Abstract: Methods and structures are described for detecting clock anomalies. Example methods include measuring a duration of a first phase of the clock signal, monitoring a duration of a second phase of the clock signal, and determining whether the duration of the second phase has exceeded the measured duration of the first phase. If so, a clock stop detection signal is asserted. Example structures include a detector circuit having an input for sensing the clock signal. The circuit is operable to measure a duration of a first clock phase instance, to monitor a duration of a second clock phase instance, and to assert an output if the duration of the second clock phase instance exceeds the measured duration of the first clock phase instance.

Abstract: A semiconductor memory device includes a memory cell array, an error correction code (ECC) engine circuit, an error information register and a control logic circuit. The memory cell array includes memory cell rows. The control logic circuit controls the ECC engine circuit to generate an error generation signal based on performing a first ECC decoding on first sub-pages in a first memory cell row in a scrubbing operation and based on performing a second ECC decoding on second sub-pages in a second memory cell row in a normal read operation on the second memory cell row. The control logic circuit records error information in the error information register and controls the ECC engine circuit to skip an ECC encoding and an ECC decoding on a selected memory cell row of the first memory cell row and the second memory cell row based on the error information.

Abstract: A method for accessing a memory includes the following. Location information of fail bits of multiple banks is acquired, backup circuits are distributed to the target banks from the multiple banks according to the location information of the fail bits by using a repair algorithm, a predicted repair result of the target bank is acquired, the availability of the target bank is detected according to the predicted repair result of the target bank, information indicating whether bits of target partial address bits of the target banks are predicted to be valid or invalid is acquired, and then predicted partial address bits are determined from the multiple address bits according to the information of the target partial address bits of the target banks to access a memory in a partial access mode according to the predicted partial address bits.

Abstract: A receiver and a method for receiving a radio communication is disclosed. The method includes receiving a burst encoded with a robust modulation coding scheme (MCS) as RX signals; generating, for each of the RX signals, a burst SNR, soft decision symbols and a packet; weighing, each of soft decision symbols with a respective burst SNR, to calculate soft combined symbols that are used to generate a Maximal-Ratio Combining (MRC) packet; and selecting, from the packets and the MRC packet, a CRC passed packet as an output. An adaptive dual burst transmitter is disclosed.

Abstract: Methods, systems, and devices for imprint recovery management for memory systems are described. In some cases, memory cells may become imprinted, which may refer to conditions where a cell becomes predisposed toward storing one logic state over another, resistant to being written to a different logic state, or both. Imprinted memory cells may be recovered using a recovery or repair process that may be initiated according to various conditions, detections, or inferences. In some examples, a system may be configured to perform imprint recovery operations that are scaled or selected according to a characterized severity of imprint, an operational mode, environmental conditions, and other factors. Imprint management techniques may increase the robustness, accuracy, or efficiency with which a memory system, or components thereof, can operate in the presence of conditions associated with memory cell imprinting.