Patents Examined by Christopher G. Young
  • Reflective type blankmask and photomask for EUV
    Patent number: 11579521
    Abstract: Disclosed is a blankmask for EUV includes a substrate, a reflection film that is stacked on the substrate; and an absorbing film that is stacked on the reflection film. The reflection film has a structure in which a pair including a first layer made of Ru or a Ru compound in which one or more of Mo, Nb, and Zr are added to Ru, and a second layer made of Si is stacked plural times. Interdiffusion between the respective layers constituting the reflection film is suppressed.
    Type: Grant
    Filed: January 8, 2021
    Date of Patent: February 14, 2023
    Assignee: S&S TECH CO., LTD.
    Inventors: Cheol Shin, Jong-Hwa Lee, Chul-Kyu Yang, Gil-Woo Kong
  • Control method of movable body, exposure method, device manufacturing method, movable body apparatus, and exposure apparatus
    Patent number: 11567419
    Abstract: In a beam irradiation apparatus in which a movable body holds an object, a mark detection system detects a first mark on the movable body while moving the movable body in a first direction and changing an irradiation position of a measurement beam in the first direction, the mark detection system detects a second mark while moving the movable body in the first direction and changing the irradiation position of the measurement beam in the first direction, a controller controls a position of the movable body in a second direction intersecting the first direction during a time period between the detection of the first mark and the detection of the second mark, and the controller controls the movement of the movable body to adjust a positional relation between the object on the movable body and a processing beam, based on results of the detection of the first and second marks.
    Type: Grant
    Filed: April 16, 2021
    Date of Patent: January 31, 2023
    Assignee: NIKON CORPORATION
    Inventor: Akihiro Ueda
  • EUV pellicles
    Patent number: 11567399
    Abstract: A pellicle having a metal oxysilicide layer. A pellicle having a molybdenum layer, a ruthenium layer and a silicon oxynitride layer, wherein the molybdenum layer is disposed between the ruthenium layer and the silicon oxynitride layer. A method of manufacturing a pellicle for a lithographic apparatus, the method including providing a metal oxysilicide layer. A lithographic assembly including a pellicle having a metal oxysilicide layer. The use of a pellicle having a metal oxysilicide layer in a lithographic apparatus.
    Type: Grant
    Filed: December 31, 2021
    Date of Patent: January 31, 2023
    Assignee: ASML Netherlands B.V.
    Inventors: Zomer Silvester Houweling, Chaitanya Krishna Ande, Dennis De Graaf, Thijs Kater, Michael Alfred Josephus Kuijken, Mahdiar Valefi
  • EUV masks to prevent carbon contamination
    Patent number: 11561464
    Abstract: An extreme ultra-violet mask includes a substrate, a multi-layered mirror layer, a capping layer, a first tantalum-containing oxide layer, a tantalum-containing nitride layer, and a second tantalum-containing oxide layer. The multi-layered mirror layer is over the substrate. The capping layer is over the multi-layered mirror layer. The first tantalum-containing oxide layer is over the capping layer. The tantalum-containing nitride layer is over the first tantalum-containing oxide layer. The second tantalum-containing oxide layer is over the tantalum-containing nitride layer.
    Type: Grant
    Filed: November 22, 2021
    Date of Patent: January 24, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Pei-Cheng Hsu, Ta-Cheng Lien, Hsin-Chang Lee
  • Using E0 exposures for track/cluster monitoring
    Patent number: 11561481
    Abstract: Techniques for using open frame (E0) exposures for lithographic tool track/cluster monitoring are provided. In one aspect, a method for monitoring a lithographic process includes: performing open frame exposures E0 of at least one wafer coated with a photoresist using a photolithography tool; baking and developing the at least one wafer; performing a defect inspection of the at least one wafer to generate a haze map; grouping haze data from the haze map; and analyzing the haze data to identify a maximum E0 response dose E?.
    Type: Grant
    Filed: July 20, 2020
    Date of Patent: January 24, 2023
    Assignee: International Business Machines Corporation
    Inventors: Cody J. Murray, Ekmini Anuja De Silva, Christopher Frederick Robinson, Luciana Meli
  • Monolithically framed pellicle membrane suitable for lithography in the fabrication of integrated circuits
    Patent number: 11561466
    Abstract: Monolithic framed pellicle membrane integrating a structural framing member with a membrane spanning the framing member. The monolithic frame pellicle membrane is suitable as an overlay of a reticle employed in lithography operations of integrated circuit manufacture. A semiconductor-on-insulator (SOI) wafer may be machined from the backside, for example with a bonnet polisher, to form a pellicle framing member by removing a portion of a base semiconductor substrate of the SOI wafer selectively to top semiconductor layer of the SOI wafer, which is retained as a pellicle membrane. In some exemplary embodiments suitable for extreme ultraviolet (EUV) lithography applications, at least the top semiconductor layer of the SOI wafer is a substantially monocrystalline silicon layer.
    Type: Grant
    Filed: November 19, 2021
    Date of Patent: January 24, 2023
    Assignee: Intel Corporation
    Inventors: John Magana, Guojing Zhang
  • Extreme ultraviolet mask blank hard mask materials
    Patent number: 11556053
    Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; an absorber layer on the capping layer, the absorber layer comprising an antimony-containing material; and a hard mask layer on the absorber layer, the hard mask layer comprising a hard mask material selected from the group consisting of CrO, CrON, TaNi, TaRu and TaCu.
    Type: Grant
    Filed: January 25, 2021
    Date of Patent: January 17, 2023
    Assignee: Applied Materials, Inc.
    Inventors: Shuwei Liu, Wen Xiao, Vibhu Jindal, Azeddine Zerrade
  • System and apparatus for lithography in semiconductor fabrication
    Patent number: 11550228
    Abstract: A lithography apparatus is provided. The lithography apparatus includes a wafer stage configured to secure a semiconductor wafer and having a plurality of electrodes. The lithography apparatus also includes an exposure tool configured to perform an exposure process by projecting an extreme ultraviolet (EUV) light on the semiconductor wafer. The lithography apparatus further includes a controller configured to control power supplied to the electrodes to have a first adjusted voltage during the exposure process for a first group of exposure fields on the semiconductor wafer so as to secure the semiconductor wafer to the wafer stage. The first adjusted voltage is in a range from about 1.6 kV to about 3.2 kV.
    Type: Grant
    Filed: March 26, 2021
    Date of Patent: January 10, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Cheng-Kuan Wu, Po-Chung Cheng, Li-Jui Chen, Chih-Tsung Shih
  • Reflective mask blank, reflective mask, method of manufacturing reflective mask, and method of manufacturing semiconductor device
    Patent number: 11550215
    Abstract: Provided is a reflective mask blank with which it is possible to further reduce the shadowing effect of a reflective mask, and also possible to form a fine and highly accurate phase-shift pattern. A reflective mask blank having, in the following order on a substrate, a multilayer reflective film and a phase-shift film that shifts the phase of EUV light, said reflective mask blank characterized in that: the phase-shift film has a first layer and a second layer; the first layer comprises a material that contains at least one element from among tantalum (Ta) and chromium (Cr); and the second layer comprises a metal-containing material that contains ruthenium (Ru) and at least one element from among chromium (Cr), nickel (Ni), cobalt (Co), vanadium (V), niobium (Nb), molybdenum (Mo), tungsten (W), and rhenium (Re).
    Type: Grant
    Filed: May 24, 2019
    Date of Patent: January 10, 2023
    Assignee: HOYA CORPORATION
    Inventors: Yohei Ikebe, Tsutomu Shoki
  • Pellicle for flat panel display photomask
    Patent number: 11537050
    Abstract: A pellicle assembly for large-size photomasks including a frame member configured to be affixed to a large-size photomask substrate, a substantially rigid and transparent pellicle membrane affixed to the frame member so as to protect at least a portion of the large-size photomask substrate from contamination during usage, storage and/or transport, and a coating on at least one of top and bottom surfaces of the pellicle membrane that binds the pellicle membrane to prevent separation of pellicle membrane material in the event of breakage.
    Type: Grant
    Filed: August 12, 2021
    Date of Patent: December 27, 2022
    Assignee: PHOTRONICS, INC.
    Inventors: Bryan S. Kasprowicz, Christopher Progler
  • Extreme ultraviolet mask blank hard mask materials
    Patent number: 11537040
    Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; an absorber layer on the capping layer, the absorber layer comprising a tantalum-containing material; and a hard mask layer on the absorber layer, the hard mask layer comprising a hard mask material selected from the group consisting of CrO, CrON, TaNi, TaRu and TaCu.
    Type: Grant
    Filed: January 25, 2021
    Date of Patent: December 27, 2022
    Assignee: Applied Materials, Inc.
    Inventors: Shuwei Liu, Wen Xiao, Vibhu Jindal, Azeddine Zerrade
  • Photomask having a plurality of shielding layers
    Patent number: 11531263
    Abstract: Some embodiments relate to photomask for mask patterning. The photomask includes a transparent layer comprising quartz, and a molybdenum silicide (MoSi) layer overlying the transparent layer. A first shielding layer overlies the MoSi layer and has a first thickness and a first optical density. A second shielding layer overlies the first shielding layer and has a second thickness and a second optical density. The second thickness is less than one third of the first thickness, and the second optical density is less than one fourth of the first optical density. An overall optical density of the first and second shielding layers is at least 1.8.
    Type: Grant
    Filed: August 18, 2021
    Date of Patent: December 20, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chih-Chiang Tu, Chun-Lang Chen
  • Mask blanks and methods for depositing layers on mask blank
    Patent number: 11531262
    Abstract: A reflective mask blank includes a substrate, a reflective multilayer (RML) disposed on the substrate, a capping layer disposed on the reflective multilayer, and an absorber layer disposed on the capping layer. The absorber layer has length or width dimensions smaller than the capping layer, and part of the capping layer is exposed by the absorber layer. The dimension of the absorber layer and the hard mask layer ranges between 146 cm to 148 cm. The dimensions of the substrate, the RML, and the capping layer range between 150 cm to 152 cm.
    Type: Grant
    Filed: October 29, 2020
    Date of Patent: December 20, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Hsin-Chang Lee, Pei-Cheng Hsu, Ta-Cheng Lien, Wen-Chang Hsueh
  • Reflective mask blank, reflective mask and manufacturing method thereof, and semiconductor device manufacturing method
    Patent number: 11531264
    Abstract: Provided is a reflective mask blank with which it is possible to further reduce the shadowing effect of a reflective mask, and also possible to form a fine and highly accurate phase-shift pattern. A reflective mask blank having, in the following order on a substrate, a multilayer reflective film and a phase-shift film that shifts the phase of EUV light, said reflective mask blank characterized in that the phase-shift film has a thin film comprising a metal-containing material that contains: ruthenium (Ru); and at least one element from among chromium (Cr), nickel (Ni), (Co), aluminum (Al), silicon (Si), titanium (Ti), vanadium (V), germanium (Ge), niobium (Nb), molybdenum (Mo), tin (Sn), tellurium (Te), hafnium (Hf), tungsten (W), and rhenium (Re).
    Type: Grant
    Filed: May 24, 2019
    Date of Patent: December 20, 2022
    Assignee: HOYA CORPORATION
    Inventors: Yohei Ikebe, Tsutomu Shoki
  • Pellicle and method of manufacturing same
    Patent number: 11526073
    Abstract: A pellicle comprises a stress-controlled metal layer. The stress in said metal layer may be between about 500-50 MPa. A method of manufacturing a pellicle comprising a metal layer includes deposing said metal layer by plasma physical vapor deposition. Process parameters are selected so as to produce a desired stress value in said metal layer, such as between about 500-50 MPa.
    Type: Grant
    Filed: March 11, 2022
    Date of Patent: December 13, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Po Hsuan Li, Yu-Ting Lin, Yun-Yue Lin, Huai-Tei Yang
  • Dummy insertion for improving throughput of electron beam lithography
    Patent number: 11526081
    Abstract: An electron beam lithography system and an electron beam lithography process are disclosed herein for improving throughput. An exemplary method for increasing throughput achieved by an electron beam lithography system includes receiving an integrated circuit (IC) design layout that includes a target pattern, wherein the electron beam lithography system implements a first exposure dose to form the target pattern on a workpiece based on the IC design layout. The method further includes inserting a dummy pattern into the IC design layout to increase a pattern density of the IC design layout to greater than or equal to a threshold pattern density, thereby generating a modified IC design layout. The electron beam lithography system implements a second exposure dose that is less than the first exposure dose to form the target pattern on the workpiece based on the modified IC design layout.
    Type: Grant
    Filed: July 2, 2021
    Date of Patent: December 13, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Shih-Ming Chang, Wen Lo, Chun-Hung Liu, Chia-Hua Chang, Hsin-Wei Wu, Ta-Wei Ou, Chien-Chih Chen, Chien-Cheng Chen
  • Method and apparatus for dynamic lithographic exposure
    Patent number: 11520237
    Abstract: The present disclosure, in some embodiments, relates to a photolithography tool. The photolithography tool includes a source configured to generate electromagnetic radiation. A dynamic focal system is configured to provide the electromagnetic radiation to a plurality of different vertical positions over a substrate stage. The plurality of different vertical positions include a first position having a first depth of focus and a second position having a second depth of focus that is below the first depth of focus and that vertically overlaps the first depth of focus.
    Type: Grant
    Filed: May 5, 2021
    Date of Patent: December 6, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Jun-Yih Yu, De-Fang Huang, De-Chen Tseng, Jia-Feng Chang, Li-Fang Hsu
  • Extreme ultraviolet mask absorber materials
    Patent number: 11513437
    Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer on the capping layer, the absorber layer comprising an alloy selected from an alloy of ruthenium (Ru) and silicon (Si); an alloy tantalum (Ta) and platinum (Pt); and an alloy of ruthenium (Ru) and molybdenum (Mo).
    Type: Grant
    Filed: January 11, 2021
    Date of Patent: November 29, 2022
    Assignee: Applied Materials, Inc.
    Inventors: Shiyu Liu, Shuwei Liu, Vibhu Jindal
  • EUV photo masks and manufacturing method thereof
    Patent number: 11506969
    Abstract: A reflective mask includes a substrate, a reflective multilayer disposed over the substrate, a capping layer disposed over the reflective multilayer, an intermediate layer disposed over the capping layer, an absorber layer disposed over the intermediate layer, and a cover layer disposed over the absorber layer. The intermediate layer includes a material having a lower hydrogen diffusivity than a material of the capping layer.
    Type: Grant
    Filed: December 2, 2020
    Date of Patent: November 22, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Pei-Cheng Hsu, Ta-Cheng Lien, Hsin-Chang Lee
  • Reflective film coated substrate, mask blank, reflective mask, and semiconductor device manufacturing method
    Patent number: 11500281
    Abstract: A reflective film coated substrate includes a substrate having two main surfaces opposite to each other and end faces connected to outer edges of the two main surfaces; and a reflective film formed on one of the main surfaces and extending onto at least part of the end faces. The reflective film on the main surface has a multilayer structure including low refractive index layers and high refractive index layers alternately formed. The reflective film which extends onto the end faces has a single-layer structure containing a first element higher in content than any other element in the low refractive index layers and a second element higher in content than any other element in the high refractive index layers.
    Type: Grant
    Filed: September 1, 2020
    Date of Patent: November 15, 2022
    Assignee: HOYA CORPORATION
    Inventors: Kazuhiro Hamamoto, Takashi Uchida