Patents Examined by Christopher G. Young
  • Patent number: 10216081
    Abstract: A pellicle frame containing a frame body, the frame body having a groove formed in one end surface of the frame body, the one end surface being an end surface in a thickness direction of the frame body that is located at a side configured to support a pellicle membrane, and a through-hole that penetrates through a portion between an outer circumferential surface of the frame body and a wall surface of the groove formed in the one end surface.
    Type: Grant
    Filed: April 27, 2015
    Date of Patent: February 26, 2019
    Assignee: MITSUI CHEMICALS, INC.
    Inventors: Kazuo Kohmura, Yosuke Ono, Daiki Taneichi, Yasuyuki Sato, Toshiaki Hirota
  • Patent number: 10216088
    Abstract: The disclosure relates to a photolithography method based on electronic beam. The method includes: providing an electronic beam; making the electron beam transmit a two dimensional nanomaterial to form a transmission electron beam and a number of diffraction electron beams; shielding the transmission electron beam; and radiating a surface of an object by the plurality of diffraction electron beams. The photolithography method is high efficiency and has low cost.
    Type: Grant
    Filed: June 6, 2017
    Date of Patent: February 26, 2019
    Assignees: Tsinghua University, HON HAI PRECISION INDUSTRY CO., LTD.
    Inventors: Peng Liu, Wei Zhao, Xiao-Yang Lin, Duan-Liang Zhou, Chun-Hai Zhang, Kai-Li Jiang, Shou-Shan Fan
  • Patent number: 10216098
    Abstract: A test structure and method of its manufacture are presented for use in metrology measurements of a sample pattern. The test structure comprises a test pattern comprising a portion of the sample pattern including at least one selected feature and a blocking layer at least partially covering regions of the test structure adjacent to the at least one selected region.
    Type: Grant
    Filed: December 10, 2015
    Date of Patent: February 26, 2019
    Assignee: NOVA MEASURING INSTRUMENTS LTD.
    Inventors: Oded Cohen, Gilad Barak, Igor Turovets
  • Patent number: 10209614
    Abstract: A conductive film coated substrate, including a conductive film formed thereon. In a relationship between a bearing area (%) and a bearing depth (nm) that are obtained by measuring, with an atomic force microscope, a region of 1 ?m×1 ?m of a surface of the conductive film, the surface of the conductive film satisfies a relationship that (BA70-BA30)/(BD70-BD30) is 15 or more and 260 or less (%/nm), and a maximum height (Rmax) is 1.3 nm or more and 15 nm or less.
    Type: Grant
    Filed: July 21, 2017
    Date of Patent: February 19, 2019
    Assignee: HOYA CORPORATION
    Inventors: Kazuhiro Hamamoto, Yoichi Usui
  • Patent number: 10197907
    Abstract: An extreme ultraviolet (EUV) mask blank production system includes: a substrate handling vacuum chamber for creating a vacuum; a substrate handling platform, in the vacuum, for transporting an ultra-low expansion substrate loaded in the substrate handling vacuum chamber; and multiple sub-chambers, accessed by the substrate handling platform, for forming an EUV mask blank includes: a multi-layer stack, formed above the ultra-low expansion substrate, for reflecting an extreme ultraviolet (EUV) light, and an absorber layer, formed above the multi-layer stack, for absorbing the EUV light at a wavelength of 13.5 nm includes the absorber layer has a thickness of less than 80 nm and less than 2% reflectivity.
    Type: Grant
    Filed: February 21, 2017
    Date of Patent: February 5, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Vinayak Vishwanath Hassan, Majeed A. Foad, Cara Beasley, Ralf Hofmann
  • Patent number: 10191366
    Abstract: Disclosed herein is a computer-implemented method to improve a lithographic process for imaging a portion of a design layout onto a substrate using a lithographic projection apparatus and for transferring the imaged portion of the design layout to the substrate by an etching process, which includes the following steps: determining a value of at least one evaluation point of the lithographic process for each of a plurality of variations of the etching process; computing a multi-variable cost function of a plurality of design variables that are characteristics of the lithographic process, wherein the multi-variable cost function is a function of deviation from the determined values of the at least one evaluation point; and reconfiguring the characteristics of the lithographic process by adjusting the design variables until a termination condition is satisfied. This method may reduce the need of repeated adjustment to the lithographic process when the etching process varies.
    Type: Grant
    Filed: June 1, 2015
    Date of Patent: January 29, 2019
    Assignee: ASML Netherlands B.V.
    Inventor: Xiaofeng Liu
  • Patent number: 10191365
    Abstract: A reflective mask blank capable of facilitating the discovery of contaminants, scratches and other critical defects by inhibiting the detection of pseudo defects attributable to surface roughness of a substrate or film in a defect inspection using a highly sensitive defect inspection apparatus. The reflective mask blank has a mask blank multilayer film comprising a multilayer reflective film, obtained by alternately laminating a high refractive index layer and a low refractive index layer, and an absorber film on a main surface of a mask blank substrate, wherein the root mean square roughness (Rms), obtained by measuring a 3 ?m×3 ?m region on the surface of the reflective mask blank on which the mask blank multilayer film is formed with an atomic force microscope, is not more than 0.5 nm and the power spectrum density at a spatial frequency of 1 ?m?1 to 10 ?m?1 is not more than 50 nm4.
    Type: Grant
    Filed: June 27, 2017
    Date of Patent: January 29, 2019
    Assignee: HOYA CORPORATION
    Inventors: Kazuhiro Hamamoto, Tatsuo Asakawa, Tsutomu Shoki
  • Patent number: 10185216
    Abstract: The present disclosure discloses a mask sheet and a method of manufacturing a mask sheet, which belong to display technique field. The mask sheet includes a light shielding region and a light transmitting region. The light shielding region includes an adjoining portion which is located at a position where the light shielding region adjoins the light transmitting region, and thickness of other portion of the light shielding region of the mask sheet except the adjoining portion is greater than that of the adjoining portion of the mask sheet.
    Type: Grant
    Filed: February 19, 2016
    Date of Patent: January 22, 2019
    Assignees: BOE TECHNOLOGY GROUP CO., LTD., HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Shenjun Zhang, Guofeng Weng
  • Patent number: 10185217
    Abstract: A pellicle frame containing a frame body, the frame body having a groove formed in one end surface of the frame body, the one end surface being an end surface in a thickness direction of the frame body that is located at a side configured to support a pellicle membrane, and a through-hole that penetrates through a portion between an outer circumferential surface of the frame body and a wall surface of the groove formed in the one end surface.
    Type: Grant
    Filed: April 27, 2015
    Date of Patent: January 22, 2019
    Assignee: MITSUI CHEMICALS, INC.
    Inventors: Kazuo Kohmura, Yosuke Ono, Daiki Taneichi, Yasuyuki Sato, Toshiaki Hirota
  • Patent number: 10180622
    Abstract: Provided is a mask blank in which uniformity of the composition and optical characteristics of a phase-shift film in the in-plane direction and direction of film thickness is high, uniformity of the composition and optical characteristics of the phase-shift film between a plurality of substrates is also high, and defectivity is low even if a silicon-based material is applied to the material that forms the phase-shift film.
    Type: Grant
    Filed: March 9, 2017
    Date of Patent: January 15, 2019
    Assignee: HOYA CORPORATION
    Inventors: Hiroaki Shishido, Kazuya Sakai
  • Patent number: 10168611
    Abstract: The present disclosure provides a photolithography mask. The photolithography mask includes a substrate that contains a low thermal expansion material (LTEM). A multilayer (ML) structure is disposed over the substrate. The ML structure is configured to reflect radiation. The ML structure contains a plurality of interleaving film pairs. Each film pair includes a first film and a second film. The first film and the second film have different material compositions. Each film pair has a respective thickness. For at least a subset of the plurality of the film pairs, the respective thicknesses of the film pairs change randomly along a predefined direction.
    Type: Grant
    Filed: August 16, 2017
    Date of Patent: January 1, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chih-Tsung Shih, Jeng-Horng Chen, Shinn-Sheng Yu, Anthony Yen
  • Patent number: 10168613
    Abstract: Provided are a mask blank substrate which has effectively and extremely high principal surface flatness while a reduction in the manufacturing throughput of the mask blank substrate is suppressed, a mask blank, and a transfer mask. Also provided are manufacturing methods therefor. virtual reference surface that becomes an optically effective flat reference surface defined by a Zernike polynomial which is composed of only terms in which the order of a variable related to a radius is the second or lower order, and includes one or more terms in which the order of the variable related to the radius is the second order is set, and a mask blank substrate satisfying the condition that data (PV value) relating to the difference between the maximum value and the minimum value of the difference data between the reference surface and the measured shape of the mask blank substrate is one-eighth or less of an exposure wavelength (?) is selected.
    Type: Grant
    Filed: May 12, 2017
    Date of Patent: January 1, 2019
    Assignee: HOYA CORPORATION
    Inventor: Masaru Tanabe
  • Patent number: 10162258
    Abstract: A method for fabricating a pellicle includes forming a first dielectric layer over a back surface of a substrate. After forming the first dielectric layer, and in some embodiments, a graphene layer is formed over a front surface of the substrate. In some examples, after forming the graphene layer, the first dielectric layer is patterned to form an opening in the first dielectric layer that exposes a portion of the back surface of the substrate. Thereafter, while using the patterned first dielectric layer as a mask, an etching process may be performed to the back surface of the substrate to form a pellicle having a pellicle membrane that includes the graphene layer.
    Type: Grant
    Filed: December 15, 2016
    Date of Patent: December 25, 2018
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yun-Yue Lin, Hsuan-Chen Chen, Chih-Cheng Lin, Hsin-Chang Lee, Yao-Ching Ku, Wei-Jen Lo, Anthony Yen, Chin-Hsiang Lin, Mark Chien
  • Patent number: 10156782
    Abstract: A mask (M) for EUV lithography includes: a substrate (7), a first surface region (A1) formed by a surface (8a) of a multilayer coating (8) embodied to reflect EUV radiation (27), said surface (8a) facing away from the substrate (7), and a second surface region (A2) formed by a surface (18a) of a further coating (18) embodied to reflect DUV radiation (28) and to suppress the reflection of EUV radiation (27), said surface (18a) facing away from the substrate (7). The further coating is a multilayer coating (18). Also disclosed are an EUV lithography apparatus that includes such a mask (M) and a method for determining a contrast proportion caused by DUV radiation when imaging a mask (M) onto a light-sensitive layer.
    Type: Grant
    Filed: February 13, 2017
    Date of Patent: December 18, 2018
    Assignee: CARL ZEISS SMT GMBH
    Inventor: Peter Huber
  • Patent number: 10156783
    Abstract: A system and method for repairing a photolithographic mask is provided. An embodiment comprises forming a shielding layer over an absorbance layer on a substrate. Once the shielding layer is in place, the absorbance layer may be repaired using, e.g., an e-beam process to initiate a reaction to repair a defect in the absorbance layer, with the shielding layer being used to shield the remainder of the absorbance layer from undesirable etching during the repair process.
    Type: Grant
    Filed: February 27, 2017
    Date of Patent: December 18, 2018
    Assignee: Taiwan Semiconductor Manufactuing Company, Ltd.
    Inventors: Chih-Chiang Tu, Chun-Lang Chen, Jong-Yuh Chang, Boming Hsu, Tran-Hui Shen
  • Patent number: 10151972
    Abstract: A manufacturing method of a photomask according to the embodiment sets an exposure condition applied when a resist is formed into a three-dimensional target shape by using a photomask including a plurality of light-shielding areas. Subsequently, the method sets a hypothetical target shape obtained by correcting a target shape based on a development characteristic of the resist for the exposure condition. Subsequently, the method creates a pattern of the photomask corresponding to the hypothetical target shape. Subsequently, the method simulates a prediction shape of the resist when the pattern is used. Subsequently, the method calculates a cost function related to an error between the prediction shape and the hypothetical target shape. Subsequently, the method adjusts the pattern based on a result of the calculation of the cost function.
    Type: Grant
    Filed: March 1, 2017
    Date of Patent: December 11, 2018
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Takaki Hashimoto, Satoshi Usui, Naoki Sato, Kouichi Nakayama, Masahiro Miyairi, Syogo Okamoto
  • Patent number: 10146122
    Abstract: A halftone phase shift film is formed on a transparent substrate by reactive sputtering using a silicon target, an inert gas, and a nitrogen-containing reactive gas. A hysteresis curve is drawn by sweeping the flow rate of the reactive gas, and plotting the sputtering voltage or current during the sweep versus the flow rate of the reactive gas. In a transition mode sputtering step of sputtering in a region corresponding to a range from more than the lower limit of reactive gas flow rate providing the hysteresis to less than the upper limit, the target power, the inert gas flow rate and/or the reactive gas flow rate is increased or decreased continuously or stepwise.
    Type: Grant
    Filed: January 11, 2017
    Date of Patent: December 4, 2018
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Takuro Kosaka, Yukio Inazuki, Hideo Kaneko
  • Patent number: 10146123
    Abstract: A mask blank with phase shift film where changes in transmittance and phase shift to an exposure light of an ArF excimer laser are suppressed. The film transmits light of an ArF excimer laser at a transmittance of 2% or more and less than 10% and generates a phase difference of 150 degrees or more and 190 degrees or less between the exposure light transmitted through the phase shift film and the exposure light transmitted through the air for the same distance as a thickness of the phase shift film. The film has a stacked lower layer and upper layer, the lower layer containing metal and silicon and substantially free of oxygen. The upper layer containing metal, silicon, nitrogen, and oxygen. The lower layer is thinner than the upper layer, and the ratio of metal to metal and silicon of the upper layer is less than the lower layer.
    Type: Grant
    Filed: October 7, 2015
    Date of Patent: December 4, 2018
    Assignee: HOYA CORPORATION
    Inventors: Hiroaki Shishido, Osamu Nozawa, Takenori Kajiwara
  • Patent number: 10133177
    Abstract: An exposure method of exposing a plurality of exposure regions on a substrate includes the steps of acquiring first reference information indicating a reference height of the substrate, measuring heights of some exposure regions among the plurality of exposure regions, acquiring temporary height information indicating a temporary height of the substrate on the basis of a measurement result in the measuring step, and exposing one exposure region among the plurality of exposure regions after the substrate is moved on the basis of second reference information indicating a reference height of the one exposure region and a difference between the first reference information and the temporary height information.
    Type: Grant
    Filed: April 13, 2016
    Date of Patent: November 20, 2018
    Assignee: CANON KABUSHIKI KAISHA
    Inventor: Mitsuhide Nishimura
  • Patent number: 10126652
    Abstract: This disclosure provides embodiments of an approach that enforces coexistence of multiple, aligned block copolymer morphologies within a single patterning layer.
    Type: Grant
    Filed: September 19, 2016
    Date of Patent: November 13, 2018
    Assignee: Brookhaven Science Associates, LLC
    Inventors: Charles Thomas Black, Aaron Stein, Gwen Wright, Kevin G. Yager