Abstract: The present invention relates to: a slurry composition for final polishing of a silicon wafer, which reduces haze and the number of defects in the surface of an object to be polished and has excellent performance; and a final polishing method using same, the slurry composition comprising 1-20 wt % of colloidal silica as abrasive particles, 0.03-0.5 wt % of a surfactant, 0.1-10 wt % of a pH adjuster, 0.02-2 wt % of a water-soluble thickener, 0.05-0.2 wt % of a chelating agent, and 0.1-1 wt % of an organic base.

Abstract: In a cleaning process for removing parasitic depositions on surfaces of a process chamber of a CVD reactor, a susceptor of the CVD reactor is heated by a heating device, and the susceptor is regulated to a specified temperature or is heated with a constant heat output. Concurrently, an etching gas is supplied to the heated process chamber. The thermal response of at least one object is monitored, in which the thermal response is the temperature of the wide face of a process chamber cover, the wide face facing away from the process chamber. The parasitic depositions influence the emissivity of the surface of the process chamber cover, the emissivity influencing the temperature distribution in the process chamber. The supply of etching gas is terminated when the temperature reaches a comparison value, the temperature changing in response to changes in the surface emissivity during the cleaning process.

Abstract: Systems and methods for removing impurities from exhaust gases produced by semiconductor processing tools, e.g., such as a wet bench, utilize cooled scrubbing fluids and non-random structured packing materials to achieve and enhance removal of acid or alkaline components in the exhaust gas along with an enhanced removal of volatile organic components in the exhaust gas. Removal efficiencies of the acid or alkaline components of greater than 90% and removal efficiencies of the volatile organic components of greater than 70% are described.

Abstract: A substrate processing method includes a first process of supplying an etching liquid to a peripheral portion of a substrate while rotating the substrate having a metal polycrystalline film formed on a front surface thereof; a second process of supplying a rinse liquid to a portion of the substrate closer to a center side of the substrate than a supply position of the etching liquid in the first process while rotating the substrate; a third process of supplying the etching liquid to the peripheral portion of the substrate while rotating the substrate; a fourth process of supplying the rinse liquid to a portion of the substrate closer to the center side of the substrate than a supply position of the etching liquid in the third process while rotating the substrate; and a fifth process of drying the substrate after the fourth process.

Abstract: Provided is an efficient method for attaching a tissue section. In the invention, one of problems is solved by changing attachment conditions of the tissue section depending on an organ from which the tissue section is derived. A technique of achieving good adhesiveness between a microscope slide and a section by introducing unevenness on a front surface of the microscope slide using reactive ion etching as one of the attachment conditions is provided. Further, a technique of optimizing the attachment of the section using a machine learning technique or the like is provided.

Abstract: A metal residue removing liquid including a mixed solvent containing a first organic solvent and a second organic solvent, a salt of a base containing no metal ions and hydrofluoric acid, and water, in which the first organic solvent is diethylformamide, and the mixed solvent has a value of 0.6 or more, which is obtained by subtracting a hydrogen bond term of a Hansen solubility parameter from a polar term of the Hansen solubility parameter.

Abstract: A method of cleaning and polishing a backside surface of a semiconductor wafer is provided. The method includes placing an abrasive brush, comprising an abrasive tape wound around an outer surface of a brush member of the abrasive brush, on the backside surface of the semiconductor wafer. The method also includes rotating the brush member to polish the backside surface of the semiconductor wafer by abrasive grains formed on the abrasive tape and to clean the backside surface of the semiconductor wafer by the brush member which is not covered by the abrasive tape.

Abstract: A monitoring method includes a setting-up processing step, a capturing step, and a monitoring step. The setting-up processing step includes a step of generating, with a camera, a plurality of preliminarily captured images corresponding to a plurality of irradiation modes, a step of identifying a non-existent region indicating at least one of a shadow and a reflected image of an object included in a preliminarily captured image in a first irradiation mode, based on a difference between the plurality of preliminarily captured images, and a step of storing non-existent-region data in a storage. In the capturing step after the setting-up processing step, the camera generates a monitoring captured image while the capture region is irradiated with the illumination light in the first irradiation mode. In the monitoring step, the monitoring target object is monitored based on a region of the monitoring captured image except the non-existent region.

Abstract: A semiconductor processing tool includes a cleaning chamber configured to perform a post-chemical mechanical polishing/planarization (post-CMP) cleaning operation in an oxygen-free (or in a near oxygen-free) manner. An inert gas may be provided into the cleaning chamber to remove oxygen from the cleaning chamber such that the post-CMP cleaning operation may be performed in an oxygen-free (or in a near oxygen-free) environment. In this way, the post-CMP cleaning operation may be performed in an environment that may reduce oxygen-causing corrosion of metallization layers and/or metallization structures on and/or in the semiconductor wafer, which may increase semiconductor processing yield, may decrease semiconductor processing defects, and/or may increase semiconductor processing quality, among other examples.

Abstract: A composition may include, in dry form: (a) nigrosin; (b) wheat flour; and (c) whole egg. Such compositions may be used for production of test soil for assessment of the cleaning action of cleaning devices. Methods of producing a test soil for assessment of the cleaning action of cleaning devices for cleaning of vessels for human egesta, e.g., of washer-disinfectors, including dissolving the composition in an aqueous medium. A test soil may include the constituents of the composition in an aqueous medium, and such soils may be used for assessment of the cleaning action of cleaning devices. A method may assess the cleaning action of cleaning devices for cleaning of vessels for human egesta.

Abstract: In certain embodiments, a workstation includes: a cleaning station configured to clean a die vessel, wherein the die vessel is configured to secure a semiconductor die; an inspection station configured to inspect the die vessel after cleaning to determine whether the die vessel is identified as passing inspection; and a conveyor configured to move the die vessel between the cleaning station and the inspection station.

Abstract: An etching method includes forming a metal oxide layer that is a barium titanate layer or a strontium titanate layer over a substrate, and etching the metal oxide layer using atomic layer etching.

Abstract: A biological sensing system, comprising a microelectrode array having a plurality of islands that are thermally isolated from each other and are interconnected by flexible nano-scale wires. An embedded complementary metal oxide semiconductor (CMOS) instrumentation amplifier and wireless communication circuitry may be operatively connected to the microelectrode array and embedded within input/output pads connected to the wires at the periphery of the array.

Abstract: A system for cleaning, repairing, and/or replacing damaged shaker screens is disclosed. The system may comprise a shale shaker with a replaceable shaker screen, at least one camera, and a computer processor. The camera is positioned to capture images of the shale shaker screen and the processor is capable of receiving said images from the camera. The processor is configured to analyze the images and detect damaged regions of the shale shaker screen. The processor is also configured to determine when a screen is damaged above a predefined threshold. Certain embodiments allow for the automatic cleaning, repair, and/or replacement of the shaker screen.

Abstract: A method of manufacturing a memory device at least includes the following steps. A first interconnect and a first dielectric layer are formed on a substrate. A first chemical mechanical polishing process is performed on the first dielectric layer. A stack structure is formed over the first dielectric layer and a staircase structure is formed in the stack structure. A second dielectric layer is formed on the substrate to cover the stack structure and the staircase structure. A second chemical mechanical polishing process is performed on the second dielectric layer. A depth of second grooves of a second polishing pad used in the second chemical mechanical polishing process is smaller than a depth of first grooves of a first polishing pad used in the first chemical mechanical polishing process. The memory device may be a 3D NAND flash memory with high capacity and high performance.

Abstract: Cleaning fluids and methods are provided for cleaning a firearm. In examples, a firearm cleaning fluid may comprise an emulsion. The emulsion may include ammonium hydroxide and a sulfurized olefin. The sulfurized olefin may be in an amount less than about 30 weight percent based on the total weight of the firearm cleaning fluid.

Abstract: Disclosed is a plasma device including at least two plasma cells, and a command unit, wherein the first and the second electrodes of a given plasma cell are independent from the corresponding first and second electrodes of the contiguous plasma cells. The electrodes of contiguous plasma cells are independently connected to the command unit. The command unit includes a high voltage generator and a radiofrequency generator which are mutually protected by a filtering element.

Abstract: Provided is a means for sufficiently removing residues remaining on the surface of a polished object and reducing the surface roughness of the polished object. The present invention relates to a surface treatment composition containing components (A) to (C), and having pH of more than 7.0: the component (A): a cyclic amine compound having a nitrogen-containing non-aromatic heterocyclic ring, the component (B): a nonionic polymer, the component (C): a buffer represented by a formula: A-COO?NH4+ wherein A is an alkyl group having from 1 to 10 carbon atoms, or a phenyl group.

Abstract: A preparation and a process for the surface pretreatment of titanium or titanium alloys containing 200 to 400 g/l NaOH and 10 to 150 g/l MGDA in water, wherein the preparation has a pH of at least 12, and preferably 13, and wherein a content of further substances is less than 1 g/l.

Abstract: The present disclosure generally relates to semiconductor processing tool cleaning, such as may be included in semiconductor processing for manufacturing an integrated circuit (IC). In an example, a cleaning process is performed on an interior surface of a chamber of a semiconductor processing tool. The cleaning process includes flowing a reactive gas into an interior volume of the chamber. The interior volume is defined at least in part by the interior surface. The reactive gas consists exclusively of boron trichloride (BCl3). After performing the cleaning process, a material layer over a semiconductor substrate is etched in the chamber.