Abstract: A method of cleaning and polishing a backside surface of a semiconductor wafer is provided. The method includes placing an abrasive brush, comprising an abrasive tape wound around an outer surface of a brush member of the abrasive brush, on the backside surface of the semiconductor wafer. The method also includes rotating the brush member to polish the backside surface of the semiconductor wafer by abrasive grains formed on the abrasive tape and to clean the backside surface of the semiconductor wafer by the brush member which is not covered by the abrasive tape.

Abstract: A monitoring method includes a setting-up processing step, a capturing step, and a monitoring step. The setting-up processing step includes a step of generating, with a camera, a plurality of preliminarily captured images corresponding to a plurality of irradiation modes, a step of identifying a non-existent region indicating at least one of a shadow and a reflected image of an object included in a preliminarily captured image in a first irradiation mode, based on a difference between the plurality of preliminarily captured images, and a step of storing non-existent-region data in a storage. In the capturing step after the setting-up processing step, the camera generates a monitoring captured image while the capture region is irradiated with the illumination light in the first irradiation mode. In the monitoring step, the monitoring target object is monitored based on a region of the monitoring captured image except the non-existent region.

Abstract: A composition may include, in dry form: (a) nigrosin; (b) wheat flour; and (c) whole egg. Such compositions may be used for production of test soil for assessment of the cleaning action of cleaning devices. Methods of producing a test soil for assessment of the cleaning action of cleaning devices for cleaning of vessels for human egesta, e.g., of washer-disinfectors, including dissolving the composition in an aqueous medium. A test soil may include the constituents of the composition in an aqueous medium, and such soils may be used for assessment of the cleaning action of cleaning devices. A method may assess the cleaning action of cleaning devices for cleaning of vessels for human egesta.

Abstract: A semiconductor processing tool includes a cleaning chamber configured to perform a post-chemical mechanical polishing/planarization (post-CMP) cleaning operation in an oxygen-free (or in a near oxygen-free) manner. An inert gas may be provided into the cleaning chamber to remove oxygen from the cleaning chamber such that the post-CMP cleaning operation may be performed in an oxygen-free (or in a near oxygen-free) environment. In this way, the post-CMP cleaning operation may be performed in an environment that may reduce oxygen-causing corrosion of metallization layers and/or metallization structures on and/or in the semiconductor wafer, which may increase semiconductor processing yield, may decrease semiconductor processing defects, and/or may increase semiconductor processing quality, among other examples.

Abstract: In certain embodiments, a workstation includes: a cleaning station configured to clean a die vessel, wherein the die vessel is configured to secure a semiconductor die; an inspection station configured to inspect the die vessel after cleaning to determine whether the die vessel is identified as passing inspection; and a conveyor configured to move the die vessel between the cleaning station and the inspection station.

Abstract: An etching method includes forming a metal oxide layer that is a barium titanate layer or a strontium titanate layer over a substrate, and etching the metal oxide layer using atomic layer etching.

Abstract: A biological sensing system, comprising a microelectrode array having a plurality of islands that are thermally isolated from each other and are interconnected by flexible nano-scale wires. An embedded complementary metal oxide semiconductor (CMOS) instrumentation amplifier and wireless communication circuitry may be operatively connected to the microelectrode array and embedded within input/output pads connected to the wires at the periphery of the array.

Abstract: A system for cleaning, repairing, and/or replacing damaged shaker screens is disclosed. The system may comprise a shale shaker with a replaceable shaker screen, at least one camera, and a computer processor. The camera is positioned to capture images of the shale shaker screen and the processor is capable of receiving said images from the camera. The processor is configured to analyze the images and detect damaged regions of the shale shaker screen. The processor is also configured to determine when a screen is damaged above a predefined threshold. Certain embodiments allow for the automatic cleaning, repair, and/or replacement of the shaker screen.

Abstract: A method of manufacturing a memory device at least includes the following steps. A first interconnect and a first dielectric layer are formed on a substrate. A first chemical mechanical polishing process is performed on the first dielectric layer. A stack structure is formed over the first dielectric layer and a staircase structure is formed in the stack structure. A second dielectric layer is formed on the substrate to cover the stack structure and the staircase structure. A second chemical mechanical polishing process is performed on the second dielectric layer. A depth of second grooves of a second polishing pad used in the second chemical mechanical polishing process is smaller than a depth of first grooves of a first polishing pad used in the first chemical mechanical polishing process. The memory device may be a 3D NAND flash memory with high capacity and high performance.

Abstract: Cleaning fluids and methods are provided for cleaning a firearm. In examples, a firearm cleaning fluid may comprise an emulsion. The emulsion may include ammonium hydroxide and a sulfurized olefin. The sulfurized olefin may be in an amount less than about 30 weight percent based on the total weight of the firearm cleaning fluid.

Abstract: Disclosed is a plasma device including at least two plasma cells, and a command unit, wherein the first and the second electrodes of a given plasma cell are independent from the corresponding first and second electrodes of the contiguous plasma cells. The electrodes of contiguous plasma cells are independently connected to the command unit. The command unit includes a high voltage generator and a radiofrequency generator which are mutually protected by a filtering element.

Abstract: Provided is a means for sufficiently removing residues remaining on the surface of a polished object and reducing the surface roughness of the polished object. The present invention relates to a surface treatment composition containing components (A) to (C), and having pH of more than 7.0: the component (A): a cyclic amine compound having a nitrogen-containing non-aromatic heterocyclic ring, the component (B): a nonionic polymer, the component (C): a buffer represented by a formula: A-COO?NH4+ wherein A is an alkyl group having from 1 to 10 carbon atoms, or a phenyl group.

Abstract: A preparation and a process for the surface pretreatment of titanium or titanium alloys containing 200 to 400 g/l NaOH and 10 to 150 g/l MGDA in water, wherein the preparation has a pH of at least 12, and preferably 13, and wherein a content of further substances is less than 1 g/l.

Abstract: The present disclosure generally relates to semiconductor processing tool cleaning, such as may be included in semiconductor processing for manufacturing an integrated circuit (IC). In an example, a cleaning process is performed on an interior surface of a chamber of a semiconductor processing tool. The cleaning process includes flowing a reactive gas into an interior volume of the chamber. The interior volume is defined at least in part by the interior surface. The reactive gas consists exclusively of boron trichloride (BCl3). After performing the cleaning process, a material layer over a semiconductor substrate is etched in the chamber.

Abstract: A silicon wafer, a preparation method of the silicon wafer, and a passivation treatment solution is disclosed. The preparation method of the silicon wafer can include the following steps: providing a solar silicon ingot; cutting the solar silicon ingot with a first treatment solution to form a pretreated silicon wafer; degluing the pretreated silicon wafer with a second treatment solution to obtain a deglued silicon wafer; and cleaning the deglued silicon wafer with a third treatment solution to obtain the silicon wafer; wherein at least one of the first treatment solution, the second treatment solution and the third treatment solution comprises a non-metallic compound that is bonded with a silicon ion via a single bond.

Abstract: A substrate processing method includes a processing film forming step in which a processing liquid is supplied to a front surface of a substrate to solidify or cure the processing liquid on the front surface of the substrate, thereby forming a processing film on the front surface of the substrate, an etching component forming step in which the processing film is subjected to etching component forming processing to form an etching component in the processing film, an etching step in which a surface layer portion of the substrate is etched by the etching component formed in the etching component forming step, and a processing film removing step in which a peeling liquid is supplied to a front surface of the processing film, thereby peeling the processing film from the front surface of the substrate and removing the processing film from the front surface of the substrate.

Abstract: A cavity forming method includes the steps of: providing the material modification processing device; according to the cavity topography of the workpiece, utilizing the material modification processing device to perform local modification including: calculating the laser-light shaping and scanning information, and based on the laser-light shaping and scanning information to have the optical axis adjustment unit to adjust positions of the laser-light shaping and scanning processing module and the processing stage, such that the area of the workpiece to be projected by the Bessel beam can be formed as the modified area; and, etching the modified area to form a cavity of the cavity topography. In additional, a material modification processing device is also provided.

Abstract: Provided are a tool and a method for processing a semiconductor wafer. A processing method includes supporting a semiconductor wafer continuously along a periphery of the semiconductor wafer with an electrically grounded conductive member; and spinning the semiconductor wafer, wherein surface charges induced during spinning are dissipated by movement of electrons from the semiconductor wafer to the electrically grounded conductive member at the periphery of the semiconductor wafer.

Abstract: A wafer processing apparatus includes a rotating chuck rotatably installed on a driver, a vacuum chuck which is disposed on the rotating chuck and on which a wafer is seated, a chuck module installed in the rotating chuck to fix the wafer to the vacuum chuck, and a moving module configured to move the vacuum chuck or the chuck module to increase a gap between adjacent dies of the wafer.

Abstract: A substrate processing method includes a processing film forming step in which a processing liquid is supplied to a front surface of a substrate and the processing liquid on the front surface of the substrate is solidified or cured to form a processing film on the front surface of the substrate, an etching facilitating step in which the processing film is subjected to etching function developing processing, thereby facilitating etching at a surface layer portion of the substrate by the processing film, and an etching reducing step in which the processing film is subjected to etching function eliminating processing, thereby reducing the etching at the surface layer portion of the substrate by the processing film in a state that the processing film is kept on the substrate.