Abstract: A positive resist composition comprising a polymer comprising recurring units having both an acyl or alkoxycarbonyl group and an acid labile group-substituted hydroxyl group exhibits a high contrast of alkaline dissolution rate before and after exposure, a high resolution, a good pattern profile and minimal edge roughness.

Abstract: The objective of this invention is to provide a composition for forming a topcoat layer enabling to produce a pattern excellent in roughness and in pattern shape; and also to provide a pattern formation method employing that composition is described. The means for solving this objective is a composition for forming a topcoat layer, comprising a solvent and a fullerene derivative having a hydrophilic group; and also a method of forming a pattern by casting the above composition on a resist surface and then by subjecting it to exposure and development.

Abstract: A photoresist polymer comprising a first repeating unit including a halogen donor group and a second repeating unit including a protecting group connected by a sulfide bond.

Abstract: A photosensitive transfer material including a support, a thermoplastic resin layer, and a photosensitive resin composition layer in this order, in which the photosensitive resin composition layer includes a polymer component (A) including a polymer having a constituent unit (a1) that includes a group in which an acid group is protected by an acid-decomposable group and a photoacid generator (B).

Abstract: The invention provides a polymer for a resist under layer film composition, containing a repeating unit shown by the formula (1) and a repeating unit shown by the formula (3), wherein R01 independently represents a hydrogen atom or a methyl group; R02 represents a group selected from the formulae (1-1) to (1-3); R03 represents a saturated or unsaturated tertiary alkyl group having 4 to 20 carbon atoms and optionally containing an oxygen functional group; and A2 represents a single bond or a divalent linking group having 2 to 10 carbon atoms and containing an ester group, wherein the dotted line represents a bonding arm.

Abstract: A radiation-sensitive resin composition containing an alicyclic olefin polymer which has an acidic group (A), a sulfonium salt-based photoacid generator (B) which is represented by the following general formula (1), and a cross-linking agent (C) is provided. (In the above general formula (1), R1, R2, and R3 respectively independently are a C6 to C30 aryl group, C4 to C30 heterocyclic group, C1 to C30 alkyl group, C2 to C30 alkenyl group, or C2 to C30 alkynyl group, the groups being optionally substituted, and “a” is an integer of 1 to 5.

Abstract: A resist composition contains (A) a resin being insoluble or poorly soluble in alkali aqueous solution, but becoming soluble in an alkali aqueous solution by the action of an acid, (B) an acid generator represented by the formula (II), and (D) a compound represented by the formula (I), wherein R1 and R2, m and n, R3 and R4, X1, R5 and Z1+ are defined in the specification.

Abstract: The present invention relates to a preparation method for a dry film solder resist (DFSR) capable of forming the DFSR having fine unevenness on a surface by a more simplified method, and a film laminate used therein. The preparation method for a dry film solder resist includes forming a predetermined photo-curable and heat-curable resin composition on a transparent carrier film having a surface on which a fine unevenness having an average roughness (Ra) of 200 nm to 2 ?m is formed; laminating the resin composition on a substrate to form a laminated structure in which the substrate, the resin composition, and the transparent carrier film are sequentially formed; exposing the resin composition and delaminating the transparent carrier film; and alkaline-developing the resin composition in a non-exposure part and performing heat-curing.

Abstract: Provided is a curable resin composition for a dry-etching resist, the curable resin composition containing a polymer (A) having, in a side chain, a particular structure including an aromatic group having a vinyl group. The polymer (A) includes 80 to 100 wt % of the particular structure. In addition, provided are a dry-etching resist mask obtained by curing the curable composition for a dry-etching resist, and the dry-etching resist mask having a pattern formed by a nanoimprint method.

Abstract: The present invention relates to a modified epoxy acrylate and a method for producing the same, a photoresist composition and a method for producing the same, and a transparent photoresist formed from the photoresist composition. The modified epoxy acrylate is an epoxy acrylate modified with phosphate monomer which has a structure represented by Formula I wherein, n is an integer selected from 1˜21, R is a short-chain carboxylic acid ester group having the structural formula ?in which p is a bivalent saturated or unsaturated carbon chain having 1˜10 carbon atoms, and the carbon chain is optionally substituted by alkyl, alkenyl, hydroxy, nitro or halogen. Since the phosphate can react with the multi-valence metal in substrates so as to connect the polymer onto the substrates firmly through covalent bonds, therefore the adhesion force is improved significantly and the protective function of the tranparent photoresist is improved accordingly.

Abstract: Provided is a modified hydroxy naphthalene novolak resin which is optimal for a photosensitive composition and a resist material having high optical sensitivity, resolution, and alkali developability, and excellent heat resistance and moisture absorption resistance, and the modified hydroxy naphthalene novolak resin includes a structural moiety (I) represented by Structural Formula as a repeating unit: wherein R1is any one of a hydrogen atom, a tertiary alkyl group, an alkoxyalkyl group, an acyl group, an alkoxycarbonyl group, a hetero atom-containing cyclic hydrocarbon group, and a trialkylsilyl group; m is 1 or 2; R2's each independently is any one of a hydrogen atom, an alkyl group, an alkoxy group, an aryl group, an aralkyl group, and a halogen atom; and at least one of the R1's present in the resin is any one of a tertiary alkyl group, an alkoxyalkyl group, an acyl group, an alkoxycarbonyl group, a hetero atom-containing cyclic hydrocarbon group, and a trialkylsilyl group.

Abstract: A polymer, an organic layer composition, an organic layer, and a method of forming patterns, the polymer including a moiety represented by the following Chemical Formula 1:

Abstract: A polyimide precursor including a structural unit represented by the following general formula (1) in a ratio of 50 mol % or more based on the total structural units. In the general formula (1), A is a tetravalent organic group represented by the following general formula (2a), a tetravalent organic group represented by the following general formula (2b), or a tetravalent organic group represented by the following general formula (2c), and B is a divalent organic group represented by the following general formula (3).

Abstract: There is provided a resist overlayer film forming composition for use in a lithography process in semiconductor device production, which does not intermix with a resist, blocks undesirable exposure light particularly in EUV exposure, for example, UV and DUV and selectively transmits EUV alone, and which can be developed with a developer after exposure. A resist overlayer film forming composition comprising: a polymer including an organic group including a linear or branched saturated alkyl group having a carbon atom number of 1 to 10, in which some or all of hydrogen atoms thereof are substituted with fluorine atoms, and an optionally substituted C8-16 ether compound as a solvent.

Abstract: A method for producing a semiconductor device, which includes forming an underlayer film on a semiconductor substrate with a resist underlayer film forming composition that contains a solvent, and a polymer containing a unit structure of Formula (2): O—Ar2—O—Ar3-T-Ar4??Formula (2) where Ar2, Ar3, and Ar4 are individually a C6-50 arylene group or an organic group containing a heterocyclic group; at least one of Ar3 and Ar4 is a phenylene group; and T is a carbonyl group. The resist underlayer film forming composition has a solid content of 0.1 to 70 mass % of a total mass of the composition.

Abstract: A formulation comprising an esterified polyamide resin with a photosensitive linkage, a polymerizable crosslinker, and an organic species is provided. The organic species is selected such that (a) when exposed to UV radiation, it copolymerizes with the polymerizable crosslinker and the photosensitive linkage on the esterified polyamide resin forming the crosslinking network, (b) during thermal cure the copolymer thus formed drops from polyimide backbones, and (c) wherein the thermal degradation temperature of the copolymer thus formed is lower than the thermal degradation temperature of the homopolymer formed from the polymerizable crosslinker and the thermal degradation temperature of the copolymer formed from the polymerizable crosslinker and the photosensitive linkage on the esterified polyamide resin. The formulation is useful in forming a semiconductor passivation layer and facilitates more complete removal of crosslinker using less stringent conditions.

Abstract: The present invention relates to a photosensitive resin composition and a photosensitive material comprising the same. The photosensitive resin composition according to an exemplary embodiment of the present invention may comprise two multi-functional monomers where structures of side chains comprising unsaturated double bonds are different from each other while a composition ratio is changed. Accordingly, in the exemplary embodiment of the present invention, processability is excellent, and it is possible to decrease defects by a rupture when a LCD substrate is sealed and substrate separation defects due to an impact to the LCD products by improving an adhesion property to a lower substrate after a hard baking process.

Abstract: A target variable analysis unit (11) calculates the triad fractions of monomer units in the composition of a known polymer sample from the copolymerization reactivity ratios of the monomer units to obtain a target variable. A waveform processing unit (12) processes NMR measurements, signals, etc. An explanatory variable analysis unit (13) obtains explanatory variables from the amount of chemical shift and signal strength in the NMR measurements of the known sample. A model generation unit (14) determines the regression equation of the regression model of the target variable and the explanatory variables by partial least squares regression, and obtains regression model coefficients. A sample analysis unit (15) uses the regression model to calculate the triad fractions for an unknown copolymer sample from the amount of chemical shift and signal strength in the NMR measurements of the unknown copolymer sample.

Abstract: Organic coating compositions, particularly antireflective coating compositions, are provided that can be developed with an aqueous alkaline developer, including in a single step during development of an overcoated photoresist layer. Preferred coating compositions comprise a tetrapolymer that comprises at least four distinct functional groups.

Abstract: A photoresist composition, comprising: from 0.1 to 1.0 parts of a polyether-modified organosilicon levelling agent 58; from 7 to 23 parts of a polyfunctional monomer; from 13 to 29 parts of a alkaline soluble resin; from 23 to 62.8 parts of a pigment dispersion; from 1.5 to 11.9 parts of a photo-initiator; and from 10 to 45 parts of a solvent, on the basis of parts by weight. The photoresist composition can solve the problem of poor levelling property of the coating film and shrinkage of the film surface after high temperature baking occurring in the existing photoresist composition.