Abstract: An organic film composition including a compound represented by the following general formula (1), wherein n1 and n2 each independently represent 0 or 1; “W” represents a single bond or any of structures represented by the following formula (2); R1 represents any of structures represented by the following general formula (3); m1 and m2 each independently represent an integer of 0 to 7, with the proviso that m1+m2 is 1 to 14. There can be provided an organic film composition for forming an organic film having dry etching resistance as well as advanced filling/planarizing characteristics.
Abstract: Provided is an actinic-ray- or radiation-sensitive resin composition and a method of forming a pattern using the same, ensuring excellent the etching resistivity and the stability during a post-exposure delay (PED) period. The composition contains a resin containing a repeating unit containing a group that is decomposed when acted on by an acid to thereby produce an alcoholic hydroxyl group, and a compound that generates an acid of pKa??1.5 when exposed to actinic rays or radiation.
Type:
Grant
Filed:
March 25, 2011
Date of Patent:
July 18, 2017
Assignee:
FUJIFILM Corporation
Inventors:
Shohei Kataoka, Kaoru Iwato, Sou Kamimura, Toru Tsuchihashi, Yuichiro Enomoto, Kana Fujii, Kazuyoshi Mizutani, Shinji Tarutani, Keita Kato
Abstract: A negative pattern is formed by coating a resist composition comprising a polymer comprising recurring units having a carboxyl and/or hydroxyl group optionally substituted with an acid labile group, an oxirane or oxetane compound having a hydrophilic group, and an acid generator onto a substrate, prebaking, exposing, baking, and developing in an organic solvent so that the unexposed region of resist film is dissolved away and the exposed region of resist film is not dissolved. The resist composition exhibits a high sensitivity and high dissolution contrast during organic solvent development and forms a fine hole or trench pattern via positive/negative reversal.
Type:
Grant
Filed:
September 8, 2015
Date of Patent:
July 18, 2017
Assignee:
SHIN-ETSU CHEMICAL CO., LTD.
Inventors:
Jun Hatakeyama, Masayoshi Sagehashi, Daisuke Domon, Koji Hasegawa
Abstract: In one aspect, organic coating compositions, particularly antireflective coating compositions, are provided that comprise that comprise a diene/dienophile reaction product. In another aspect, organic coating compositions, particularly antireflective coating compositions, are provided that comprise a component comprising a hydroxyl-naphthoic group, such as a 6-hydroxy-2-naphthoic group Preferred compositions of the invention are useful to reduce reflection of exposing radiation from a substrate back into an overcoated photoresist layer and/or function as a planarizing, conformal or via-fill layer.
Type:
Grant
Filed:
November 10, 2014
Date of Patent:
July 18, 2017
Assignee:
Rohm and Haas Electronic Materials LLC
Inventors:
John P. Amara, James F. Cameron, Jin Wuk Sung, Gregory P. Prokopowicz
Abstract: A photosensitive negative resin composition including (a) an epoxy-group-containing compound, (b) a first onium salt including a cation moiety structure represented by formula (b1) and an anion moiety structure represented by formula (b2), and (c) a second onium salt including a cation moiety structure represented by formula (c1) and an anion moiety structure represented by formula (c2).
Abstract: Provided are a fluoreneol-based monomer, a polymer for preparing a resist underlayer film obtained therefrom, a resist underlayer film composition containing the polymer, and a method for forming a resist underlayer film using the resist underlayer film composition, wherein the fluoreneol-based monomer is represented by Chemical Formula 2 below:
Type:
Grant
Filed:
April 20, 2016
Date of Patent:
July 4, 2017
Assignees:
SK Innovation Co., Ltd., SK Global Chemical Co., Ltd.
Inventors:
Kwang Kuk Lee, Jin Su Ham, Sun Joo Kim, Hye Ryoung Lee, Min Ho Jung
Abstract: A composition includes a photoacid generator and a fluorine-containing epoxy resin that is a polymer of monomers that include an acrylic monomer (a) having a perfluoropolyether group having 9 or more carbon atoms and an acrylic monomer (b) having an epoxy group in a composition ratio such that a number of acrylic functional groups derived from the acrylic monomer (b) is larger than a number of acrylic functional groups derived from the acrylic monomer (a).
Abstract: The present invention relates to photosensitive compositions containing polynorbornene (PNB) polymers and certain additives that are useful for forming microelectronic and/or optoelectronic devices and assemblies thereof, and more specifically to compositions encompassing PNBs and certain hindered phenols as additives which are capable of controlling the adhesiveness by radiation.
Abstract: Embodiments in accordance with the present invention encompass positive-tone, aqueous developable, self-imageable polymer compositions useful for forming films that can be patterned to create structures for microelectronic devices, microelectronic packaging, microelectromechanical systems, optoelectronic devices and displays.
Abstract: The purpose of the present invention is to provide: a photosensitive epoxy resin composition and/or a resist laminate of said resin composition that makes it possible to use photolithography to form an image having a vertical sidewall shape and fine resolution, low stress, and heat/humidity resistance; and a cured product of said resin composition and said resist laminate. The present invention is a photosensitive resin composition comprising: (A) an epoxy resin; (B) a polyphenol compound having a specific structure; (C) a photocationic polymerization initiator; and (D) an epoxy group-containing silane compound. The epoxy resin (A) comprises: an epoxy resin (a) obtained by reacting a phenol derivative that is represented by formula (1) with an epihalohydrin; and an epoxy resin (b) that is represented by formula (2).
Abstract: To provide a negative-working photosensitive siloxane composition developable inorganically, and also to provide a cured film-manufacturing method employing that. The present invention provides a negative-working photosensitive siloxane composition comprising a polysiloxane, a silicon-containing compound having an ureido bond, a polymerization initiator, and a solvent. This composition is coat on a substrate, exposed to light, and developed, so that a cured film can be obtained without carrying out post-exposure baking.
Type:
Grant
Filed:
April 5, 2013
Date of Patent:
June 20, 2017
Assignee:
AZ Electronic Materials (Luxembourg) S.à.r.l.
Abstract: A resist composition includes (A1) a resin which includes a structural unit represented by formula (a4), a structural unit having a cyclic ether, and the resin has no acid-labile group, (A2) a resin having an acid-labile group, and an acid generator: wherein R3 represents a hydrogen atom or a methyl group, and R4 represents a C1 to C24 saturated hydrocarbon group having a fluorine atom and a methylene group contained in the saturated hydrocarbon group may be replaced by an oxygen atom or a carbonyl group.
Type:
Grant
Filed:
September 15, 2015
Date of Patent:
June 6, 2017
Assignee:
SUMITOMO CHEMICAL COMPANY, LIMITED
Inventors:
Masahiko Shimada, Yuki Suzuki, Koji Ichikawa
Abstract: Disclosed are a compound and composition for forming a lower film, which are used in a process for forming a resist pattern by means of the directed self-assembly of a block copolymer (BCP). Also disclosed is a method for forming a lower film using same. The compound for forming a lower film of a resist pattern according to the present invention has the structure of formula 1 of claim 1.
Type:
Grant
Filed:
September 12, 2013
Date of Patent:
May 16, 2017
Assignee:
DONGJIN SEMICHEM CO., LTD.
Inventors:
Su-Young Han, Jung-Youl Lee, Jae-Woo Lee, Jae-Hyun Kim
Abstract: There is provided an actinic ray-sensitive or radiation-sensitive resin composition containing: a resin (A) containing a repeating unit represented by a specific formula (1), and an ionic compound (B) represented by a specific formula (2), a resist film formed by using the actinic ray-sensitive or radiation-sensitive resin composition, a pattern forming method including: (a) a step of forming the resist film, (b) a step of exposing the film, and (c) a step of developing the exposed film using a developer to form a pattern.
Abstract: A photoresist polymer comprising a first repeating unit including a halogen donor group and a second repeating unit including a protecting group connected by a sulfide bond.
Abstract: Self-aligned via and plug patterning for back end of line (BEOL) interconnects are described. In an example, a structure for directed self-assembly includes a substrate and a block co-polymer structure disposed above the substrate. The block co-polymer structure has a polystyrene (PS) component and a polymethyl methacrylate (PMMA) component. One of the PS component or the PMMA component is photosensitive.
Type:
Grant
Filed:
September 27, 2013
Date of Patent:
April 18, 2017
Assignee:
Intel Corporation
Inventors:
Paul A. Nyhus, Eungnak Han, Swaminathan Sivakumar, Ernisse S. Putna
Abstract: There is provided a composition for forming an EUV resist underlayer film which shows a good resit form. A resist underlayer film-forming composition for EUV lithography, including: polysiloxane (A) containing a hydrolyzed condensate of hydrolyzable silane (a); and hydrolyzable silane compound (b) having a sulfonamide structure, a carboxylic acid amide structure, a urea structure, or an isocyanuric acid structure. A resist underlayer film-forming composition for EUV lithography, including: polysiloxane (B) containing a hydrolyzed condensate of hydrolyzable silane (a) and hydrolyzable silane compound (b) having a sulfonamide structure, a carboxylic acid amide structure, a urea structure, or an isocyanuric acid structure. The polysiloxane (A) is preferably a co-hydrolyzed condensate of a tetraalkoxysilane, an alkyltrialkoxysilane and an aryltrialkoxysilane.
Abstract: A photosensitive resin composition includes an alkali-soluble resin (A), a compound having an unsaturated vinyl group (B), a photo initiator (C), solvent (D) and a silane compound (E) having a structure shown as formula (I): in the formula (I), A individually and independently represents a single bond, an alkylene group, or an arylene group, B individually and independently represents an organic group having diphenyl phosphine, hydrogen atom, an alkyl group, an aryl group, or —OR, in which R is a C1-C6 alkyl group or a phenyl group, at least one B is the organic group having diphenyl phosphine and at least one B is —OR. When B is —OR, A connected to B is the single bond. A film formed by the photosensitive resin composition has good refractivity and adhesivity to molybdenum.
Abstract: A sulfonium salt of formula (0-1) is provided wherein W is alkylene or arylene, R01 is a monovalent hydrocarbon group, m is 0, 1 or 2, k is an integer: 0?k?5+4m, R101, R102 and R103 are a monovalent hydrocarbon group, or at least two of R101, R102 and R103 may bond together to form a ring with the sulfur atom, and L is a single bond, ester, sulfonic acid ester, carbonate or carbamate bond. A resist composition comprising the sulfonium salt as PAG exhibits a very high resolution when processed by EB and EUV lithography. A pattern with minimal LER is obtainable.