Abstract: There is provided a resin composition for use in formation of a protective film to protect a substrate or a film formed on the substrate, from a developer containing an organic solvent to be used for development in pattern formation, and which contains two or more kinds of resins in which their main chain structures having a hydroxyl group are different, and contains water, a pattern forming method using the resin composition, and layered products comprising a substrate, an organic semiconductor film on the substrate, and a protective film comprising two or more kinds of resins in which their main chain structures having a hydroxyl group are different, on the organic semiconductor film.

Abstract: A composition for film formation includes a compound represented by formula (1) and a solvent. In the formula (1), R1, R2 and R3 each independently represent a group represented by the formula (a). In the formula (a), RA represents a hydrogen atom, an aryl group, or an alkyl group unsubstituted or substituted with at least one of a hydroxy group and an aryl group. RB represents a single bond or an arylene group. A part or all of hydrogen atoms on an aromatic ring of the aryl group and the arylene group may be substituted with a halogen atom, a hydroxy group, an amino group, a sulfanyl group, or a monovalent organic group having 1 to 20 carbon atoms and not including an aromatic ring.

Abstract: Embodiments in accordance with the present invention encompass negative-tone, solvent developable, self-imageable polymer compositions useful for forming films that can be patterned to create structures for microelectronic devices, microelectronic packaging, microelectromechanical systems, optoelectronic devices and displays.

Abstract: The present invention is a conductive polymer composition containing a ?-conjugated conductive polymer, a polyanion, and a gemini surfactant. There can be provided a conductive polymer composition that has excellent antistatic performance and excellent application properties, does not adversely affect a resist, and can be suitably used in lithography using electron beam or the like.

Abstract: A positive photosensitive resin composition containing a polyimide resin that allows patterns to be satisfactorily formed by photolithography, and provides patterns with excellent heat resistance, and a method for forming polyimide resin patterns using the positive photosensitive resin composition. A patterned polyimide resin film formed by the method for forming polyimide resin patterns. To the photosensitive resin composition are added a polyimide resin, and a compound in which an imidazole compound having a specific structure is generated by the action of light.

Abstract: A polyether compound which is as shown in Formula (I), wherein R1 is a polyether backbone of the polyether polyol; R2 is hydrogen or C1˜C5 alkyl; n is 3, 4 or 5. Furthermore, a photoresist composition comprising the polyether compound is disclosed. This photoresist composition is used to make the colored layer in a colored film substrate, in which the polymer film layer thus obtained has a small edge slope angle and is not prone to light leakage.

Abstract: A composition for forming a resist underlayer film for lithography, including: as a silane, a hydrolyzable organosilane, a hydrolysate of the hydrolyzable organosilane, or a hydrolysis-condensation product of the hydrolyzable organosilane, wherein the hydrolyzable organosilane is a compound of Formula (1): [(R1)aSi(R2)(3?a)]b(R3)??Formula (1) [in Formula (1), R3 is an organic group having a sulfonyl group and a light-absorbing group and is bonded to a Si atom through a Si—C bond; R1 is an alkyl, aryl, aralkyl, halogenated alkyl, halogenated aryl, halogenated aralkyl, alkenyl, an organic group having an epoxy, acryloyl, methacryloyl, mercapto, alkoxyaryl, acyloxyaryl, isocyanurate, hydroxy, cyclic amino, or a cyano group, or a combination of any of these groups and is bonded to a Si atom through a Si—C bond; R2 is an alkoxy group, an acyloxy group, or a halogen group; a is an integer of 0 to 2; and b is an integer of 1 to 3].

Abstract: A chemically amplified positive resist composition is provided comprising a substantially alkali-insoluble polymer having an acid labile group-protected acidic functional group, a poly(meth)acrylate polymer having Mw of 1,000-500,000, and an acid generator in a solvent. The composition forms on a substrate a resist film of 5-100 ?m thick which can be briefly developed to form a pattern at a high sensitivity and a high degree of removal or dissolution to bottom.

Abstract: A radiation-sensitive resin composition includes a first polymer including an acid-labile group, an acid generator to generate an acid upon exposure to radiation, and a second polymer including a fluorine atom and a functional group shown by a general formula (x). The second polymer has a fluorine atom content higher than a fluorine atom content of the first polymer. R1 represents an alkali-labile group. A represents an oxygen atom, —NR?—, —CO—O—# or —SO2—O—##, wherein the oxygen atom represented by A is not an oxygen atom bonded directly to an aromatic ring, a carbonyl group, or a sulfoxyl group, R? represents a hydrogen atom or an alkali-labile group, and “#” and “##” each indicate a bonding hand bonded to R1.

Abstract: A photosensitive composition, a protective film, and an element having the protective film are provided. The photosensitive composition includes a polysiloxane (A), an o-naphthoquinonediazidesulfonate (B), and a solvent (C). The polysiloxane (A) is obtained by polycondensing a mixture, wherein the mixture includes a silane monomer (a-1) represented by formula (1), a silane monomer (a-2) represented by formula (2), and a silicon-containing compound (a-3). The silicon-containing compound (a-3) is selected from the group consisting of a silane monomer represented by formula (3), a siloxane prepolymer, and a silica particle. The photosensitive composition can be made into a protective film with excellent chemical resistance.

Abstract: A chemically amplified negative resist composition comprising a silicone structure-bearing polymer forms a film which can be readily patterned. The patterned film is tightly adherent to various substrates and suited as protective film on electric/electronic parts because of improved alkali resistance and reliability.

Abstract: A resist overlayer film forming composition that is used for a lithography process for manufacturing semiconductor devices, and selectively transmits EUV only, in particular, by blocking exposure light undesirable for EUV exposure, such as UV and DUV, without intermixing with a resist, and that can be developed with a developing solution after exposure. A resist overlayer film forming composition including: a hydroxyl group-containing novolac-based polymer containing a structure of (Formula 1-1): (in (Formula 1-1), Ar1 is a divalent organic group that contains 1 to 3 benzene ring(s) and optionally contains a hydroxy group; Ar2 is a benzene ring group, a naphthalene ring group, or an anthracene ring group; each of the hydroxy group and R1 is a substituent for a hydrogen atom on a ring of Ar2); and a solvent.

Abstract: Provided is a method of fabricating a semiconductor device. A substrate is provided. A material layer is formed over the substrate. A photoresist layer is formed over the material layer. The photoresist layer contains a polymer. The polymer includes an acid labile group (ALG) that is linked to a plurality of carboxylic acid function groups. The photoresist layer is then patterned using a lithography process, for example an extreme ultraviolet (EUV) lithography process.

Abstract: A negative-working lithographic printing plate precursor includes a support and a coating containing a photopolymerisable layer; characterized in that the coating includes a compound including at least one moiety having a structure according to Formula (I) at a level above 10% wt and below 40% wt relative to the total dry weight of the ingredients of the coating: wherein n represents an integer equal to 0 or 1; L1 represents a divalent linking group; with the proviso that the carbonyl groups in Formula (I) are bonded to a carbon atom.

Abstract: The present invention provides, as a chemically amplified resist, a well-balanced resist or compound which results in improved sensitivity, resolution and line edge roughness (LER) without impairing the fundamental physical properties required as a resist (e.g., pattern shape, dry etching resistance, heat resistance). A mixture of cycloaliphatic ester compounds represented by general formulae (1) to (3), and a process for preparation thereof, as well as a (meth)acrylic copolymer comprising the cycloaliphatic ester compounds of general formulae (1) to (3) and a photosensitive resin composition thereof are provided.

Abstract: A method of producing a copolymer, including copolymerizing a monomer (am0) containing a partial structure represented by formula (am0-1) shown below, a monomer (am1) containing an acid decomposable group which exhibits increased polarity by the action of acid and a monomer (am5) containing an —SO2— containing cyclic group in the presence of a nitrogen-containing compound (X) having a conjugated acid with an acid dissociation constant of less than 10 (in the formula, *0 to *4 each represents a valence bond).

Abstract: A radiation-sensitive resin composition includes a polymer that includes a structural unit represented by a formula (1), and an acid generator. R1 is a hydrogen atom, a fluorine atom, or the like. R2 is a hydrogen atom or a monovalent hydrocarbon group. R3 is a hydrogen atom, a monovalent chain hydrocarbon group, or the like. R4 is a hydrogen atom, a monovalent chain hydrocarbon group, or the like. R5 is a hydrogen atom, a monovalent chain hydrocarbon group, or the like. R6 is a monovalent chain hydrocarbon group. R6 is bonded to R3 to form a first alicyclic structure, or R6 is bonded to R5 to form a second alicyclic structure. At least one hydrogen atom of R2, R3, or R4 is optionally substituted with a fluorine atom.

Abstract: The carboxyl-containing resin in accordance with the present invention has a structure resulting from addition of a carboxylic acid to at least one of epoxy groups of a biphenyl novolac epoxy resin. The carboxylic acid includes at least a polybasic acid.

Abstract: A copolymer comprises the polymerized product of a dissolution-rate controlling monomer having the formula (I), an acyclic vinyl ether monomer of the formula (II), and a cyclic vinyl ether monomer of the formula (III): wherein Ra, Rb, Rc, L, X, and Z1 are defined herein. A photoresist composition comprising the copolymer is described, as is an article coated with the photoresist composition, and a method of forming an electronic device using the photoresist composition.

Abstract: The present invention provides a novel resist underlayer film formation composition for lithography. A resist underlayer film formation composition for lithography comprising: a polymer having a structure of Formula (1) at a terminal of a polymer chain; a cross-linking agent; a compound promoting a cross-linking reaction; and an organic solvent; (where R1, R2, and R3 are each independently a hydrogen atom, a linear or branched C1-13 alkyl group, a halogeno group, or a hydroxy group; at least one of R1, R2, and R3 is the alkyl group; Ar is a benzene ring, a naphthalene ring, or an anthracene ring; two carbonyl groups are bonded to respective two adjacent carbon atoms of Ar; and X is a linear or branched C1-6 alkyl group optionally having a C1-3 alkoxy group as a substituent).