Abstract: A power supply system includes a control module for generating a control signal; a first charging pump module, coupled to the control module, for generating an adjustment charging value according to the control signal, and outputting a charging voltage according to the adjustment charging value and a conduction voltage source; an amplifying module, coupled to the first charging pump module, for utilizing the charging voltage to generate an amplifying voltage; and a load module, coupled to the amplifying module, for processing a dynamic charging operation according to the amplifying voltage.

Abstract: A buffer circuit receives a working supply voltage which may vary within a voltage range. The buffer circuit has a high voltage constant current buffer circuit, and in this circuit, the source of the first NMOS transistor is grounded, and drains of the first NMOS transistor and the first PMOS transistor are connected. The source of the second PMOS transistor is connected to the supply voltage input of the buffer circuit, and the drain of the second PMOS transistor is connected to the source of the first PMOS transistor. The input end of the high voltage diode connected composite transistors is connected to the supply voltage input of the buffer circuit, and the output end of the diode connected transistors is connected to the gates of first and second PMOS transistors. The first PMOS and NMOS transistors are high-voltage transistors. The second PMOS transistor is a low-voltage transistor.

Abstract: Techniques are provided that pumping of deep traps in GaN electronic devices using photons from an on-chip photon source. In various embodiments, a method for optical pumping of deep traps in GaN HEMTs is provided using an on-chip integrated photon source that is configured to generate photons during operation of the HEMT. In an aspect, the on-chip photon source is a SoH-LED. In various additional embodiments, an integration scheme is provided that integrates the photon source into the drain electrode of a HEMT, thereby converting the conventional HEMT with an ohmic drain to a transistor with hybrid photonic-ohmic drain (POD), a POD transistor or PODFET for short.

Abstract: A power amplifier using an equivalent transformer is provided. The power amplifier includes amplifiers and T lines having first terminals connected to the amplifiers and second terminals connected to output sides. Accordingly, powers are combined using the equivalent transformer in the power amplifier, such that an insertion loss can be reduced and thus degradation of output power efficiency can be prevented.