Abstract: A starter battery with a total battery voltage exceeding a supply voltage requirement of an electrical system. An alternator provides a charging voltage that corresponds with the supply voltage requirement of the electrical system. A total battery voltage equal to the sum of cell voltages exceeds the supply voltage requirement of the electrical system. A step-down voltage regulator reduces the total battery voltage to correspond with the supply voltage requirement and a boost voltage regulator increases the charging voltage from the alternator when charging the starter battery to the total battery voltage. When detecting a degraded cell, the step-down voltage regulator continues to regulate the total battery voltage to correspond with the supply voltage requirement after the cell has degraded and the boost voltage regulator is bypassed when charging the starter battery to no longer increase the charging voltage from the alternator when charging the starter battery.

Abstract: A pyrotechnic cut-off device to be connected to an electrical circuit to cut-off, includes a pyrotechnic initiator, a first and a second conductive portion each intended to be connected to the electrical circuit, the second portion being connected in parallel with the first portion and including two conductive elements separated by an insulating segment, at least one of the conductive elements provided with a first fuse element connected in series which is configured to trip when the intensity of the current passing therethrough exceeds a first predetermined value, and a first and a second insulating protrusion, each protruding from a lower face of a movable piston and the first and the second protrusions being located respectively in front of the first portion and the insulating segment. The pyrotechnic initiator is configured to switch the cut-off device from a first current passage configuration to a second current cut-off configuration.

Abstract: A method includes receiving data for a desired output frequency of an output clock of a phase locked loop (PLL) circuit. The method includes determining a preset value for a digitally controlled oscillator (DCO) of the PLL circuit, determining first gain coefficients and second gain coefficients for a filter of the PLL circuit, and determining ratio values for a divider circuit of the PLL circuit based on the data. The method includes providing the preset value to the DCO, the first gain coefficients to the filter, and the ratio values to the divider circuit while the PLL circuit operates in an open-loop configuration. The method includes subsequently operating the PLL circuit in a closed-loop configuration by connecting the filter to the DCO, and providing the second gain coefficients to the filter in response to detecting a phase lock of the PLL circuit operating in the closed-loop configuration.

Abstract: Solid-state energy harvesters comprising layers of metal suboxides and cerium dioxide utilizing a solid-state electrolyte to produce power and methods of making and using the same are provided. The solid-state energy harvester may have two or three electrodes per cell and produces power in the presence of water vapor and oxygen.

Abstract: Techniques are described for implementing fractional dividers in modulated phase-lock loop circuits. For example, a fractional divider can receive a base dividing value having integer and fractional components (e.g., corresponding to a carrier frequency produced by multiplying the dividing value by a reference frequency). The fractional divider can also receive a data signal to modulate the dividing value. Embodiments use a shift value (e.g., preset, or received via a shift input signal) to selectively shift and scale the modulated dividing value to generate a shifted fractional component value. The shifted fractional component value can be added to the base integer component, and de-shifted and de-scaled to generate a corrected dividing value. A feedback signal can then be generated by sequentially dividing a frequency of a clock output signal by the corrected dividing value.

Abstract: A low power signal generator and a method for generating at least one source signal based on a reference signal having a reference frequency is presented. The signal generator has a divider circuit having a resonant frequency. The generator has an adjuster adapted to adjust the resonant frequency. The divider circuit has an input to receive the reference signal and an output for providing the source signal. The divider circuit is adapted to divide the reference frequency of the reference signal by a coefficient, such that the source signal has a source frequency that is less than the reference frequency.

Abstract: Provided is a signal output device capable of appropriately outputting a signal even when a received signal amount is low. A signal output device is provided with: a high-side comparator; a low-side comparator; a high-side AC coupling unit which is connected to one end of the input terminal of the high-side comparator, and removes a DC component from either a high signal or a low signal; a low-side AC coupling unit which is connected to one end of the input terminal of the low-side comparator, and removes a DC component from either a high signal or a low signal; and a threshold output unit which outputs high-side threshold DC voltage to be combined with the output of the high-side AC coupling unit, and also outputs low-side threshold DC voltage to be combined with the output of the low-side AC coupling unit.

Abstract: A transistor device includes a transistor cell comprising a channel region, a gate runner that is electrically connected to a gate electrode on the channel region and physically separated from the gate electrode, and a harmonic termination circuit electrically connected to the gate runner between the gate electrode and an input terminal of the transistor device, the harmonic termination circuit configured to terminate signals at a harmonic frequency of a fundamental operating frequency of the transistor device.

Abstract: In a drive circuit, one of an upper-arm switch and a lower-arm switch being in an on state by a main driver is referred to as a target arm switch. The other of the upper-arm switch and the lower-arm switch being in an off state by the main driver is referred to as an opposite arm switch. An intrinsic diode connected in antiparallel to the opposite arm switch is referred to as an opposite arm diode. The drive circuit includes a protective driver configured to determine whether a failure has occurred in the target arm switch. The protective driver is configured to change the target arm switch from the on state to the off state, and the opposite arm switch from the off state to the on state upon determining that a failure has occurred in the target arm switch.

Abstract: According to one embodiment, there is provided a semiconductor integrated circuit including a first switch transistor, a first reference transistor, a differential amplifier circuit, and a current source. The first switch transistor is electrically connected between a first node on an input terminal side and a second node on an output terminal side. The first reference transistor is electrically connected between the first node and a third node. The differential amplifier circuit has a first input terminal electrically connected to the second node, a second input terminal electrically connected to the third node, and an output terminal electrically connected to a gate of the first switch transistor and a gate of the first reference transistor. The current source is electrically connected between the third node and a reference potential. The first reference transistor has dimensions smaller than dimensions of the first switch transistor.

Abstract: A semiconductor module according to embodiments includes a first external terminal, a second external terminal, a first semiconductor switch which is electrically connected between the first external terminal and the second external terminal and includes a first gate electrode, a second semiconductor switch which is electrically connected in parallel with the first semiconductor switch, between the first external terminal and the second external terminal, and includes a second gate electrode, a first fuse electrically connected between the first external terminal and the first semiconductor switch, and a second fuse electrically connected between the second external terminal and the first semiconductor switch.

Abstract: An inductive power transmitter comprising: at least one power transmitting coil configured to generate an inductive power transfer (IPT) field; and an object detection system configured to detect objects in or adjacent a space occupied by the IPT field when generated; wherein the object detection system is configured to detect a receiver object based on a tag associated with the receiver object.

Abstract: A semiconductor device, method of manufacture of a semiconductor device, and electronic system are disclosed. For example, the semiconductor device includes at least one trench disposed in a semiconductor substrate of the semiconductor device, wherein the semiconductor substrate has a first conductivity type. The semiconductor device further includes a polysilicon depleted gate shield disposed in the at least one trench, wherein the polysilicon depleted gate shield has a second conductivity type. The semiconductor device also includes a drift region disposed in the semiconductor substrate adjacent to at least one sidewall of the at least one trench, wherein the drift region has the first conductivity type, and a polysilicon gate disposed over the depleted gate shield in the at least one trench.

Abstract: A plurality of lower voltage metal oxide semiconductor sensors are integrated and distributed in various parts of a power MOSFET to provide over temperature protection. The sensors are sensitive to temperatures of the various parts of the power MOSFET and configured to regulate the power MOSFET when a trip temperature is reached by reducing the operation of the MOSFET. A bias network is configured to set the trip temperature. In some configurations, a threshold voltage is used to monitor and control the maximum temperature.

Abstract: A switch device including a switch circuit and switch controller. The switch circuit comprises first and second switches to selectively enable a path between an input terminal and an output terminal. The switch controller refers to a selection signal and a switch signal to respectively generate a first switch control signal at a first switch control signal output terminal and a second switch control signal at a second switch control signal output terminal. When the voltage level of an input signal at the input terminal is larger than a power voltage, the switch controller generates the first switch control signal and the second switch control signal capable of turning off the switch circuit. When the voltage level of the input signal is not larger than the power voltage, the switch controller generates the first switch control signal and the second switch control signal according to the switch signal.

Abstract: An apparatus for delaying a signal transition is disclosed. The apparatus includes a first circuit coupled to a first power supply signal and a second, different power supply signal. The first circuit may be configured to, based on a voltage level of a logic signal, sink a current from an intermediate circuit node. A value of the current may be based upon a voltage level of the second different power supply signal. The apparatus also includes a second circuit coupled to the first power supply signal. The second circuit may be configured to generate an output signal based upon a voltage level of the intermediate circuit node. An amount of time between a transition of the logic signal and a corresponding transition of the output signal may be based on an amount of the current.

Abstract: A semiconductor device, method of manufacture of a semiconductor device, and electronic system are disclosed. For example, the semiconductor device includes at least one trench disposed in a semiconductor substrate of the semiconductor device, wherein the semiconductor substrate has a first conductivity type. The semiconductor device further includes a polysilicon depleted gate shield disposed in the at least one trench, wherein the polysilicon depleted gate shield has a second conductivity type. The semiconductor device also includes a drift region disposed in the semiconductor substrate adjacent to at least one sidewall of the at least one trench, wherein the drift region has the first conductivity type, and a polysilicon gate disposed over the depleted gate shield in the at least one trench.

Abstract: The present disclosure relates to a structure including a voltage selection circuit which includes a first device and a second device, the voltage selection circuit is configured to output a higher voltage of a first supply voltage and a second supply voltage through one of the first device and the second device, and a voltage difference between the first supply voltage and the second supply voltage is less than a threshold voltage.

Abstract: A timing controller resetting circuit including: a resistor connected to an output node from which a reset signal is output and a first voltage source which supplies a first voltage; a capacitor connected to the output node and a second voltage source which supplies a second voltage that is lower than the first voltage; a reference voltage source configured to generate a reference voltage that is lower than the first voltage and higher than the second voltage; a comparator including a first input terminal which receives the first voltage, a second input terminal which receives the reference voltage, and an output terminal which outputs a comparison result signal generated by comparing the first voltage with the reference voltage; and a transistor including a first terminal which is connected to the output node, a second terminal which receives the second voltage, and a gate terminal which receives the comparison result signal.

Abstract: The present disclosure relates to a power supply device for a protective relay. The power supply device comprises a power circuit for supplying a power to the control circuit, wherein the power circuit includes: a semiconductor switch element having an input terminal connected to a first node for receiving a direct current, and an output terminal connected to a reference node, wherein the reference node has a voltage lower than a voltage of the first node; and a first voltage drop element disposed between the first node and a second node, wherein the second node is connected to a switching terminal of the semiconductor switch element.