Abstract: A method of producing a monolithically integrated two-transistor memory cell, including a silicon crystal for accommodating the memory cell, a first MOS field effect transistor having a current-carrying channel and both a control gate and a floating gate disposed between the control gate and surface of the crystal, a second MOS field effect transistor having a current-carrying channel and a control gate, an SiO.sub.2 film supporting the gates, a doped polycrystalline silicon layer deposited on the SiO.sub.2 film, the control gates and the floating gate being formed from the doped polycrystalline silicon layer, and an erase area for the floating gate, the improvement which includes covering a part of the silicon crystal intended for the memory cell with an SiO.sub.2 film, forming a part of the gate oxide of the first MOS field effect transistor, forming a window through the SiO.sub.

Abstract: The metal shell of a furnace or cupola is cooled by means of water flowing down over the exterior surface of the metal shell. In order to reduce heat loss and thus decrease the energy consumption, the interior surface of the metal shell is lined with a fired refractory shape. The thermal conductivity of the refractory material and its thickness are selected such that the amount of refractory material remaining upon reaching equilibrium conditions will be sufficient to maintain the mechanical and structural integrity of the lining. Refractory materials of different conductivities may be selected for various locations in the furnace depending upon the temperatures to be encountered.

Abstract: A drill rod, left in place in the plug of a taphole of a shaft furnace, is withdrawn by apparatus including a conventional percussive type taphole drill which is movable along a support bar. The support bar is provided, at the end which most closely approaches the furnace, with a guide and support head which engages and supports the drill rod as it is being withdrawn subsequent to loosening from the plugging material in the taphole.

Abstract: A dental alloy for use in porcelain-fused-to-metal restorations including palladium, cobalt, gallium, gold, aluminum, copper and ruthenium or rhenium. The cobalt controls the coefficient of thermal expansion of the alloy to permit the use of the alloy with commercially available porcelains having a variety of thermal coefficients. The ruthenium of rhenium provides grain refining for the alloy to increase its elongation, tensile strength, and thus toughness. The alloy with ruthenium or rhenium as a grain refining agent must be made under vacuum or in an inert atmosphere to avoid the formation of bubbles in the porcelain during the porcelain firing process.

Abstract: Gold is preferred as the conductor material in a metallization layer of a semiconductor device because of its high conductivity and freedom from electromigration effects but gold is inclined to diffuse into the semiconductor substrate typically silicon, so degrading the p-n junction characteristics within the semiconductor substrate and rendering the device inoperative. Previously this problem has been overcome by placing a protective barrier layer of titanium between the gold layer and the substrate. The gold/titanium interface is subject to corrosion and this corrosion adjacent the substrate containing the active areas of the device also leads to failure of the device. This is prevented by covering the gold metallization layer of the device on its top, bottom and side surfaces with titanium. This prevents the diffusion of the gold into any other layer of the semiconductor device above or below it and there is no gold/titanium interface exposed adjacent any active area of the device.

Abstract: Planar superconducting-normal-superconducting (SNS) Josephson microbridges nd superconducting quantum interference devices (SQUIDs) with bridge widths of about 0.2 microns and lengths of about 0.1 micron or less are fabricated with the aid of a technique referred to as "shadow evaporation". The procedure permits the submicron dimensions to be set by edge film thickness and slant evaporation angle, both of which can be accurately measured. Microbridges have been constructed with vanadium banks or electrodes and gold-titanium bridges, although other materials can be used including superconducting metals for the bridge. It is expected that a refined version of this technique would be suitable for repeated batch fabrication of single and multiple Josephson microbridges.

Abstract: An improved brazing alloy, particularly suited for use in high temperature gas turbine engines, has a composition range which exhibits X-ray inspection capability, improved stress rupture properties, good ductiity and oxidation resistance up to 1400.degree. F. The brazing alloy consists essentially of, by weight, about 20-80% Pd, 2-13% Cr, 1-4% B, balance being Ni and incidental impurities. The brazing alloy is capable of brazing in the 1800.degree.-2000.degree. F. temperature range and is less costly than Au-bearing brazing alloys currently in use for brazing in this temperature range.

Abstract: This invention relates to mixtures of tungsten carbide, niobium metal, and molybdenum metal powders for use in the hardfacing of drill pipe couplings used in earth boring operations. It has been found that the addition of small amounts of niobium metal alone, or in combination with molybdenum, are effective to substantially submerge the tungsten carbide particles in the weld pool produced during hardfacing while, also, minimizing the occurrence of cracks which may be produced as the weld pool freezes.

Abstract: A process for preparing a selenium alloy highly resistant to the development of persistant bulk space charge during prolonged, electrophotographic cycling comprising heating a mixture comprising selenium, arsenic and chlorine to a temperature between about 290.degree. C. and about 330.degree. C. to form a molten mixture, agitating the molten mixture to blend the components therein, discontinuing or substantially discontinuing all agitation of the mixture to achieve a quiescent state for the mixture, raising the temperature of the mixture to at least about 420.degree. C. for at least about 30 minutes and cooling the mixture until it becomes a solid.

Abstract: Internally oxidized Ag-Sn of 3 - less than 5 weight % alloy electrical contact materials are improved of their internal oxidation velocity and consequently of their contact resistance by the addition of 0.01-0.1 weight % of Bi. The alloy may comprise 0.01-0.5 weight % of one or more elements of the iron family.

Abstract: A metallurgical container for the inductive treatment of metals comprises an inner lining of refractory material and a generally tubular enclosure comprising an upper annular casing surrounding the upper open end of the inner lining, a lower annular casing surrounding the bottom of said container, and a plurality of circumferentially spaced metallic tie rods extend parallel to each other through a median heating zone of the container. A plurality of connecting elements respectively extending through openings in the bottom wall of the upper casing and the top wall of the lower casing, electrically insulated from those walls, tightly connect opposite ends of the tie rods to each wall. The tie rods and the connecting elements are formed with coaxial channels for the passage of cooling fluid therethrough which is fed into one of the casings and discharged from the other.The container according to the present invention permits powerful inductive treatment of metal and metal alloys, especially steel.

Abstract: There is described a contact material based on silver-tin oxide and additional metal oxide having a high working life, slight welding strength and low switching temperatures. Besides silver and tin oxide it contains 0.05 to 4% of molybdenum oxide and/or germanium oxide.

Abstract: A method of making a semiconductor integrated circuit on a semiconductor substrate containing thereon an SIT and an IG(MOS) FET or an SIT and C-MOS FETs, comprises a series of steps of making these functional semiconductor devices many of which steps are rendered to be common to the SIT and the FET. The gate region of said IG(MOS) FET is formed as a semiconductor gate layer which typically is made of polycrystalline silicon, and an active semiconductor area of said IG(MOS) FET is formed by using this semiconductor gate layer as the mask therefor.

Abstract: A composition is provided consisting essentially of from about 50% to about 99% by weight of a silver-copper based brazing alloy and as an additive, from about 1% to about 50% to the composition, of a metal or metal alloy having essentially the same density as the brazing alloy and being essentially insoluble in the brazing alloy. The additives are selected from (a) molybdenum, (b) mixtures of molybdenum and at least one metal selected from the group consisting of cobalt, iron and tungsten and (c) mixtures of tungsen and at least one metal selected from iron and cobalt.

Abstract: A method for manufacturing a semiconductor device includes a step, after forming a polycrystalline silicon layer, of doping oxygen and/or nitrogen by ion implantation in a predetermined portion of the polycrystalline silicon layer and converting the predetermined portion into a resistive element. The polycrystalline silicon layer is formed to cover a contact hole which exposes a predetermined portion of a conductive region, that is, a doped or semiconductor region or a wiring layer formed in contact with a semiconductor body. Within this contact hole and within the region of the polycrystalline silicon layer which is in contact with the doped region or the wiring layer, the polycrystalline silicon layer is converted into the resistive element by ion implantation.

Abstract: Iron based brazing alloys selected from particular alloys of the B-Si-Ni-Fe and B-Si-Ni-Cr-Fe systems are practical substitutes for AMS4777 alloy (3B 4Si 7Cr 3Fe 83Ni).

Abstract: A method for forming closely spaced conductors suitable for use, for example, in CCD's and MESFET's is described utilizing an edge diffusion technique to convert exposed edge portions of a polycrystalline silicon layer to a non-etchable form. The converted portions are precisely and accurately formed to serve as spacers, thereby defining a narrow gap between adjacent conductive lines.

Abstract: A holding furnace for molten metal comprises an inner vessel formed of flat, rigid, heat-resistant panels. The panels are held in sealing engagement with one another at abutting edge surfaces by the action of inwardly directed pressure applied to the panels by an integrally cast refractory outer vessel through the intermediary of a resilient layer of heat-resistant fibrous material. The pressure is applied as a result of the shrinking that the casting compound undergoes during the setting. When the inner vessel is being made, the panels, to which the resilient layer has initially been applied, are held together by the action of a reduced pressure in the inner vessel as the latter is positioned in a furnace casing interiorly lined with a mineral wool insulation. The inner vessel then is cast around with a refractory casting compound for forming the outer vessel.

Abstract: The subject invention or inventions involves providing a device which serves to substantially retard or prevent the flow of slag through a taphole of a furnace or other vessel containing molten steel, thereby improving the quality or grade of the metal. The device comprises a plug which is of such a character that when inserted in a taphole and the furnace is tilted the taphole will move to a position below the level of the layer of slag until the plug is disintegrated or destroyed by the metal to automatically allow substantially only the latter to enter and flow through the taphole or passage.

Abstract: A method of producing III-V materials by reducing a complex salt in a hydrogen atmosphere is shown. For example, complex salts reduce to InP or GaAs. The salts are conveniently prepared by coprecipitation from a salt solution or by other methods. The stoichiometry can be modified by applying an overpressure of the more volatile element or elements during reduction.